CN101054717B - 用于增加多晶硅熔化速率的间歇式加料技术 - Google Patents

用于增加多晶硅熔化速率的间歇式加料技术 Download PDF

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Publication number
CN101054717B
CN101054717B CN2007100860084A CN200710086008A CN101054717B CN 101054717 B CN101054717 B CN 101054717B CN 2007100860084 A CN2007100860084 A CN 2007100860084A CN 200710086008 A CN200710086008 A CN 200710086008A CN 101054717 B CN101054717 B CN 101054717B
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China
Prior art keywords
silicon
polysilicon
unfused
crucible
polycrystalline silicon
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Expired - Fee Related
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CN2007100860084A
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English (en)
Chinese (zh)
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CN101054717A (zh
Inventor
J·D·霍尔德
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SunEdison Inc
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SunEdison Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN2007100860084A 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术 Expired - Fee Related CN101054717B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/002,862 US20030101924A1 (en) 2001-11-15 2001-11-15 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US10/002,862 2001-11-15

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB028223144A Division CN1314842C (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术

Publications (2)

Publication Number Publication Date
CN101054717A CN101054717A (zh) 2007-10-17
CN101054717B true CN101054717B (zh) 2012-04-25

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CN2007100860084A Expired - Fee Related CN101054717B (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术
CNB028223144A Expired - Fee Related CN1314842C (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术

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CNB028223144A Expired - Fee Related CN1314842C (zh) 2001-11-15 2002-11-12 用于增加多晶硅熔化速率的间歇式加料技术

Country Status (8)

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US (1) US20030101924A1 (enExample)
EP (2) EP1820885A3 (enExample)
JP (1) JP4233453B2 (enExample)
KR (2) KR100860440B1 (enExample)
CN (2) CN101054717B (enExample)
DE (1) DE60220939T2 (enExample)
TW (1) TWI250230B (enExample)
WO (1) WO2003044249A1 (enExample)

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US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
KR101470814B1 (ko) 2006-01-20 2014-12-09 에이엠지 아이디얼캐스트 솔라 코포레이션 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
JP2010534189A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド シード結晶からキャストシリコンを製造するための方法及び装置
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
EP2072645B2 (en) † 2007-12-19 2014-12-24 Schott AG Method for producing a monocrystalline or polycrystalline semiconductor material
DE102007061704A1 (de) * 2007-12-19 2009-09-10 Schott Ag Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN103397389B (zh) * 2013-07-30 2016-08-10 英利能源（中国）有限公司 单晶棒的生产方法
CN103643286B (zh) * 2013-12-13 2016-08-17 英利集团有限公司 单晶炉的加料方法
CN106222750A (zh) * 2016-09-30 2016-12-14 中国电子科技集团公司第二十六研究所 一种硅酸镓镧系列晶体生长方法
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料系统及进料方法
US12428750B2 (en) 2022-02-25 2025-09-30 Globalwafers Co., Ltd. Ingot puller apparatus having silicon feed tubes with kick plates

Citations (3)

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CN1046360A (zh) * 1989-03-30 1990-10-24 日本钢管株式会社 制造硅单晶的设备
CN1099434A (zh) * 1993-07-15 1995-03-01 瓦克化学电子工业原料有限公司 半导体棒材或块材的生产方法及设备
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge

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US5059410A (en) * 1985-08-01 1991-10-22 Ethyl Corporation Production of silicon
US5205998A (en) * 1985-08-01 1993-04-27 Ethyl Corporation Angle of repose valve
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JP2525246B2 (ja) * 1989-07-05 1996-08-14 東芝セラミックス株式会社 粒状シリコン原料供給装置
US5569325A (en) * 1991-04-22 1996-10-29 Condea Vista Company Process for growing crystals
JPH0511788A (ja) * 1991-06-28 1993-01-22 Y & Y:Kk 車載用疑似エンジン音再生装置
JP2754104B2 (ja) * 1991-10-15 1998-05-20 信越半導体株式会社 半導体単結晶引上用粒状原料供給装置
JP2935337B2 (ja) * 1994-11-21 1999-08-16 信越半導体株式会社 粒状原料の供給装置およびその供給方法
US5642751A (en) * 1995-09-14 1997-07-01 Crawley; Michael F. Valve assembly
TW503265B (en) * 1995-12-28 2002-09-21 Mitsubishi Material Silicon Single crystal pulling apparatus
TW429273B (en) * 1996-02-08 2001-04-11 Shinetsu Handotai Kk Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
JPH10158088A (ja) * 1996-11-25 1998-06-16 Ebara Corp 固体材料の製造方法及びその製造装置
JP3189764B2 (ja) * 1997-09-29 2001-07-16 住友金属工業株式会社 シリコン単結晶原料の溶解方法
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
JPH11255588A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 単結晶原料供給装置及び単結晶原料供給方法
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
CN1095505C (zh) * 2000-03-30 2002-12-04 天津市环欧半导体材料技术有限公司 生产硅单晶的直拉区熔法
US6454851B1 (en) * 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1046360A (zh) * 1989-03-30 1990-10-24 日本钢管株式会社 制造硅单晶的设备
CN1099434A (zh) * 1993-07-15 1995-03-01 瓦克化学电子工业原料有限公司 半导体棒材或块材的生产方法及设备
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge

Also Published As

Publication number Publication date
EP1446517B1 (en) 2007-06-27
TWI250230B (en) 2006-03-01
CN1314842C (zh) 2007-05-09
US20030101924A1 (en) 2003-06-05
TW200303942A (en) 2003-09-16
CN1585838A (zh) 2005-02-23
DE60220939T2 (de) 2008-01-03
DE60220939D1 (de) 2007-08-09
WO2003044249A1 (en) 2003-05-30
CN101054717A (zh) 2007-10-17
EP1820885A2 (en) 2007-08-22
JP4233453B2 (ja) 2009-03-04
EP1446517A1 (en) 2004-08-18
EP1820885A3 (en) 2008-11-12
KR100860440B1 (ko) 2008-09-25
JP2005515951A (ja) 2005-06-02
KR20070038578A (ko) 2007-04-10
KR100811989B1 (ko) 2008-03-10
KR20050044493A (ko) 2005-05-12

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