KR100860440B1 - 다결정 실리콘의 용융 속도를 증가시키기 위한 단속식 투입기술 - Google Patents

다결정 실리콘의 용융 속도를 증가시키기 위한 단속식 투입기술 Download PDF

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KR100860440B1
KR100860440B1 KR1020077006666A KR20077006666A KR100860440B1 KR 100860440 B1 KR100860440 B1 KR 100860440B1 KR 1020077006666 A KR1020077006666 A KR 1020077006666A KR 20077006666 A KR20077006666 A KR 20077006666A KR 100860440 B1 KR100860440 B1 KR 100860440B1
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polycrystalline silicon
silicon
crucible
wedge
melt
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KR20070038578A (ko
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존 디. 홀더
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020077006666A 2001-11-15 2002-11-12 다결정 실리콘의 용융 속도를 증가시키기 위한 단속식 투입기술 Expired - Fee Related KR100860440B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/002,862 US20030101924A1 (en) 2001-11-15 2001-11-15 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US10/002,862 2001-11-15

Related Parent Applications (1)

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KR1020047007450A Division KR100811989B1 (ko) 2001-11-15 2002-11-12 다결정 실리콘의 용융 속도를 증가시키기 위한 단속식투입 기술

Publications (2)

Publication Number Publication Date
KR20070038578A KR20070038578A (ko) 2007-04-10
KR100860440B1 true KR100860440B1 (ko) 2008-09-25

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KR1020077006666A Expired - Fee Related KR100860440B1 (ko) 2001-11-15 2002-11-12 다결정 실리콘의 용융 속도를 증가시키기 위한 단속식 투입기술
KR1020047007450A Expired - Fee Related KR100811989B1 (ko) 2001-11-15 2002-11-12 다결정 실리콘의 용융 속도를 증가시키기 위한 단속식투입 기술

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KR1020047007450A Expired - Fee Related KR100811989B1 (ko) 2001-11-15 2002-11-12 다결정 실리콘의 용융 속도를 증가시키기 위한 단속식투입 기술

Country Status (8)

Country Link
US (1) US20030101924A1 (enExample)
EP (2) EP1820885A3 (enExample)
JP (1) JP4233453B2 (enExample)
KR (2) KR100860440B1 (enExample)
CN (2) CN101054717B (enExample)
DE (1) DE60220939T2 (enExample)
TW (1) TWI250230B (enExample)
WO (1) WO2003044249A1 (enExample)

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US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
KR101470814B1 (ko) 2006-01-20 2014-12-09 에이엠지 아이디얼캐스트 솔라 코포레이션 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
JP2010534189A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド シード結晶からキャストシリコンを製造するための方法及び装置
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
EP2072645B2 (en) † 2007-12-19 2014-12-24 Schott AG Method for producing a monocrystalline or polycrystalline semiconductor material
DE102007061704A1 (de) * 2007-12-19 2009-09-10 Schott Ag Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN103397389B (zh) * 2013-07-30 2016-08-10 英利能源（中国）有限公司 单晶棒的生产方法
CN103643286B (zh) * 2013-12-13 2016-08-17 英利集团有限公司 单晶炉的加料方法
CN106222750A (zh) * 2016-09-30 2016-12-14 中国电子科技集团公司第二十六研究所 一种硅酸镓镧系列晶体生长方法
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料系统及进料方法
US12428750B2 (en) 2022-02-25 2025-09-30 Globalwafers Co., Ltd. Ingot puller apparatus having silicon feed tubes with kick plates

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH0511788A (ja) * 1991-06-28 1993-01-22 Y & Y:Kk 車載用疑似エンジン音再生装置

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EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
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JP2935337B2 (ja) * 1994-11-21 1999-08-16 信越半導体株式会社 粒状原料の供給装置およびその供給方法
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Also Published As

Publication number Publication date
EP1446517B1 (en) 2007-06-27
TWI250230B (en) 2006-03-01
CN1314842C (zh) 2007-05-09
CN101054717B (zh) 2012-04-25
US20030101924A1 (en) 2003-06-05
TW200303942A (en) 2003-09-16
CN1585838A (zh) 2005-02-23
DE60220939T2 (de) 2008-01-03
DE60220939D1 (de) 2007-08-09
WO2003044249A1 (en) 2003-05-30
CN101054717A (zh) 2007-10-17
EP1820885A2 (en) 2007-08-22
JP4233453B2 (ja) 2009-03-04
EP1446517A1 (en) 2004-08-18
EP1820885A3 (en) 2008-11-12
JP2005515951A (ja) 2005-06-02
KR20070038578A (ko) 2007-04-10
KR100811989B1 (ko) 2008-03-10
KR20050044493A (ko) 2005-05-12

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