JP4233453B2 - 多結晶シリコンの溶融速度を向上させるための間欠的供給技術 - Google Patents

多結晶シリコンの溶融速度を向上させるための間欠的供給技術 Download PDF

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JP4233453B2
JP4233453B2 JP2003545864A JP2003545864A JP4233453B2 JP 4233453 B2 JP4233453 B2 JP 4233453B2 JP 2003545864 A JP2003545864 A JP 2003545864A JP 2003545864 A JP2003545864 A JP 2003545864A JP 4233453 B2 JP4233453 B2 JP 4233453B2
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polycrystalline silicon
silicon
crucible
wedge
unmelted
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JP2005515951A (ja
JP2005515951A5 (enExample
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ジョン・ディ・ホールダー
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SunEdison Inc
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MEMC Electronic Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2003545864A 2001-11-15 2002-11-12 多結晶シリコンの溶融速度を向上させるための間欠的供給技術 Expired - Fee Related JP4233453B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/002,862 US20030101924A1 (en) 2001-11-15 2001-11-15 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
PCT/US2002/036169 WO2003044249A1 (en) 2001-11-15 2002-11-12 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon

Publications (3)

Publication Number Publication Date
JP2005515951A JP2005515951A (ja) 2005-06-02
JP2005515951A5 JP2005515951A5 (enExample) 2005-12-22
JP4233453B2 true JP4233453B2 (ja) 2009-03-04

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JP2003545864A Expired - Fee Related JP4233453B2 (ja) 2001-11-15 2002-11-12 多結晶シリコンの溶融速度を向上させるための間欠的供給技術

Country Status (8)

Country Link
US (1) US20030101924A1 (enExample)
EP (2) EP1820885A3 (enExample)
JP (1) JP4233453B2 (enExample)
KR (2) KR100860440B1 (enExample)
CN (2) CN101054717B (enExample)
DE (1) DE60220939T2 (enExample)
TW (1) TWI250230B (enExample)
WO (1) WO2003044249A1 (enExample)

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US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
KR101470814B1 (ko) 2006-01-20 2014-12-09 에이엠지 아이디얼캐스트 솔라 코포레이션 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
JP2010534189A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド シード結晶からキャストシリコンを製造するための方法及び装置
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
EP2072645B2 (en) † 2007-12-19 2014-12-24 Schott AG Method for producing a monocrystalline or polycrystalline semiconductor material
DE102007061704A1 (de) * 2007-12-19 2009-09-10 Schott Ag Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN103397389B (zh) * 2013-07-30 2016-08-10 英利能源（中国）有限公司 单晶棒的生产方法
CN103643286B (zh) * 2013-12-13 2016-08-17 英利集团有限公司 单晶炉的加料方法
CN106222750A (zh) * 2016-09-30 2016-12-14 中国电子科技集团公司第二十六研究所 一种硅酸镓镧系列晶体生长方法
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料系统及进料方法
US12428750B2 (en) 2022-02-25 2025-09-30 Globalwafers Co., Ltd. Ingot puller apparatus having silicon feed tubes with kick plates

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EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
FI901413A7 (fi) * 1989-03-30 1990-10-01 Nippon Kokan Kk Laite piiyksittäiskiteiden valmistamiseksi
JP2525246B2 (ja) * 1989-07-05 1996-08-14 東芝セラミックス株式会社 粒状シリコン原料供給装置
US5569325A (en) * 1991-04-22 1996-10-29 Condea Vista Company Process for growing crystals
JPH0511788A (ja) * 1991-06-28 1993-01-22 Y & Y:Kk 車載用疑似エンジン音再生装置
JP2754104B2 (ja) * 1991-10-15 1998-05-20 信越半導体株式会社 半導体単結晶引上用粒状原料供給装置
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
JP2935337B2 (ja) * 1994-11-21 1999-08-16 信越半導体株式会社 粒状原料の供給装置およびその供給方法
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JPH11255588A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 単結晶原料供給装置及び単結晶原料供給方法
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
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US6454851B1 (en) * 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge

Also Published As

Publication number Publication date
EP1446517B1 (en) 2007-06-27
TWI250230B (en) 2006-03-01
CN1314842C (zh) 2007-05-09
CN101054717B (zh) 2012-04-25
US20030101924A1 (en) 2003-06-05
TW200303942A (en) 2003-09-16
CN1585838A (zh) 2005-02-23
DE60220939T2 (de) 2008-01-03
DE60220939D1 (de) 2007-08-09
WO2003044249A1 (en) 2003-05-30
CN101054717A (zh) 2007-10-17
EP1820885A2 (en) 2007-08-22
EP1446517A1 (en) 2004-08-18
EP1820885A3 (en) 2008-11-12
KR100860440B1 (ko) 2008-09-25
JP2005515951A (ja) 2005-06-02
KR20070038578A (ko) 2007-04-10
KR100811989B1 (ko) 2008-03-10
KR20050044493A (ko) 2005-05-12

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