JP2005515951A5 - - Google Patents

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Publication number
JP2005515951A5
JP2005515951A5 JP2003545864A JP2003545864A JP2005515951A5 JP 2005515951 A5 JP2005515951 A5 JP 2005515951A5 JP 2003545864 A JP2003545864 A JP 2003545864A JP 2003545864 A JP2003545864 A JP 2003545864A JP 2005515951 A5 JP2005515951 A5 JP 2005515951A5
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JP
Japan
Prior art keywords
polycrystalline silicon
silicon
crucible
unmelted
wedge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003545864A
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English (en)
Japanese (ja)
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JP4233453B2 (ja
JP2005515951A (ja
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Publication date
Priority claimed from US10/002,862 external-priority patent/US20030101924A1/en
Application filed filed Critical
Publication of JP2005515951A publication Critical patent/JP2005515951A/ja
Publication of JP2005515951A5 publication Critical patent/JP2005515951A5/ja
Application granted granted Critical
Publication of JP4233453B2 publication Critical patent/JP4233453B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003545864A 2001-11-15 2002-11-12 多結晶シリコンの溶融速度を向上させるための間欠的供給技術 Expired - Fee Related JP4233453B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/002,862 US20030101924A1 (en) 2001-11-15 2001-11-15 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
PCT/US2002/036169 WO2003044249A1 (en) 2001-11-15 2002-11-12 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon

Publications (3)

Publication Number Publication Date
JP2005515951A JP2005515951A (ja) 2005-06-02
JP2005515951A5 true JP2005515951A5 (enExample) 2005-12-22
JP4233453B2 JP4233453B2 (ja) 2009-03-04

Family

ID=21702897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003545864A Expired - Fee Related JP4233453B2 (ja) 2001-11-15 2002-11-12 多結晶シリコンの溶融速度を向上させるための間欠的供給技術

Country Status (8)

Country Link
US (1) US20030101924A1 (enExample)
EP (2) EP1820885A3 (enExample)
JP (1) JP4233453B2 (enExample)
KR (2) KR100860440B1 (enExample)
CN (2) CN101054717B (enExample)
DE (1) DE60220939T2 (enExample)
TW (1) TWI250230B (enExample)
WO (1) WO2003044249A1 (enExample)

Families Citing this family (18)

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US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
KR101470814B1 (ko) 2006-01-20 2014-12-09 에이엠지 아이디얼캐스트 솔라 코포레이션 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
JP5061728B2 (ja) * 2007-05-30 2012-10-31 信越半導体株式会社 シリコン単結晶の育成方法
JP2010534189A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド シード結晶からキャストシリコンを製造するための方法及び装置
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
EP2072645B2 (en) † 2007-12-19 2014-12-24 Schott AG Method for producing a monocrystalline or polycrystalline semiconductor material
DE102007061704A1 (de) * 2007-12-19 2009-09-10 Schott Ag Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN103397389B (zh) * 2013-07-30 2016-08-10 英利能源（中国）有限公司 单晶棒的生产方法
CN103643286B (zh) * 2013-12-13 2016-08-17 英利集团有限公司 单晶炉的加料方法
CN106222750A (zh) * 2016-09-30 2016-12-14 中国电子科技集团公司第二十六研究所 一种硅酸镓镧系列晶体生长方法
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料系统及进料方法
US12428750B2 (en) 2022-02-25 2025-09-30 Globalwafers Co., Ltd. Ingot puller apparatus having silicon feed tubes with kick plates

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JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
FI901413A7 (fi) * 1989-03-30 1990-10-01 Nippon Kokan Kk Laite piiyksittäiskiteiden valmistamiseksi
JP2525246B2 (ja) * 1989-07-05 1996-08-14 東芝セラミックス株式会社 粒状シリコン原料供給装置
US5569325A (en) * 1991-04-22 1996-10-29 Condea Vista Company Process for growing crystals
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