TWI240282B - High density memory sense amplifier - Google Patents

High density memory sense amplifier Download PDF

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Publication number
TWI240282B
TWI240282B TW091119524A TW91119524A TWI240282B TW I240282 B TWI240282 B TW I240282B TW 091119524 A TW091119524 A TW 091119524A TW 91119524 A TW91119524 A TW 91119524A TW I240282 B TWI240282 B TW I240282B
Authority
TW
Taiwan
Prior art keywords
current
memory cell
amplifier
memory
sense
Prior art date
Application number
TW091119524A
Other languages
English (en)
Chinese (zh)
Inventor
Frederick A Perner
Brocklin Andrew L Van
Peter J Fricke
James R Eaton Jr
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of TWI240282B publication Critical patent/TWI240282B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
TW091119524A 2001-10-11 2002-08-28 High density memory sense amplifier TWI240282B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/976,304 US6501697B1 (en) 2001-10-11 2001-10-11 High density memory sense amplifier

Publications (1)

Publication Number Publication Date
TWI240282B true TWI240282B (en) 2005-09-21

Family

ID=25523969

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091119524A TWI240282B (en) 2001-10-11 2002-08-28 High density memory sense amplifier

Country Status (7)

Country Link
US (1) US6501697B1 (https=)
EP (1) EP1302948B1 (https=)
JP (1) JP2003178574A (https=)
KR (1) KR100890612B1 (https=)
CN (1) CN100447898C (https=)
DE (1) DE60205193T2 (https=)
TW (1) TWI240282B (https=)

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TWI645399B (zh) * 2017-03-24 2018-12-21 日商東芝記憶體股份有限公司 Memory device and control method thereof

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US7130235B2 (en) * 2004-09-03 2006-10-31 Hewlett-Packard Development Company, L.P. Method and apparatus for a sense amplifier
DE102004045219B4 (de) * 2004-09-17 2011-07-28 Qimonda AG, 81739 Anordnung und Verfahren zum Auslesen von Widerstandsspeicherzellen
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
US8395199B2 (en) 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US7495971B2 (en) 2006-04-19 2009-02-24 Infineon Technologies Ag Circuit and a method of determining the resistive state of a resistive memory cell
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
TWI312154B (en) * 2006-07-20 2009-07-11 Ind Tech Res Inst Multiple state sense amplifier for memory architecture
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US7522463B2 (en) * 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7778065B2 (en) * 2008-02-29 2010-08-17 International Business Machines Corporation Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices
US7813166B2 (en) * 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
US8482955B2 (en) 2011-02-25 2013-07-09 Micron Technology, Inc. Resistive memory sensing methods and devices
KR20130030616A (ko) * 2011-09-19 2013-03-27 에스케이하이닉스 주식회사 비휘발성 메모리 장치
US8750018B2 (en) * 2012-06-04 2014-06-10 Samsung Electronics Co., Ltd. Sense amplifier circuitry for resistive type memory
JP5867315B2 (ja) * 2012-06-28 2016-02-24 富士通株式会社 判定装置、および判定方法
US20160254060A1 (en) * 2013-03-15 2016-09-01 Taqua Wbh, Llc High Speed And Low Power Sense Amplifier
CN103325414A (zh) * 2013-05-21 2013-09-25 清华大学 一种rram存储器读电路
US9460785B2 (en) 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
US10008264B2 (en) 2014-10-23 2018-06-26 Hewlett Packard Enterprise Development Lp Memristive cross-bar array for determining a dot product
KR20170085126A (ko) 2014-11-18 2017-07-21 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 널링 증폭기를 구비한 멤리스티브 내적 엔진
US9520173B1 (en) * 2016-02-29 2016-12-13 Freescale Semiconductor, Inc. Magnetic random access memory (MRAM) and method of operation
DE102016110049A1 (de) * 2016-05-31 2017-11-30 Infineon Technologies Ag Ermitteln eines Zustands einer Speicherzelle
KR20170143125A (ko) * 2016-06-20 2017-12-29 삼성전자주식회사 기준전압을 생성하기 위한 메모리 셀을 포함하는 메모리 장치
CN110136759B (zh) * 2018-02-09 2021-01-12 上海磁宇信息科技有限公司 降低读操作对数据扰动的电路
CN109256158A (zh) * 2018-08-16 2019-01-22 歌尔股份有限公司 感测电路
CN113823342B (zh) * 2020-06-19 2024-12-06 长鑫存储技术(上海)有限公司 半导体集成电路以及存储器
US11295811B2 (en) * 2020-08-27 2022-04-05 Micron Technology, Inc. Increase of a sense current in memory
US12596484B2 (en) 2023-05-26 2026-04-07 SanDisk Technologies, Inc. Apparatus and method for two-step read of resistive random access memory

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI645399B (zh) * 2017-03-24 2018-12-21 日商東芝記憶體股份有限公司 Memory device and control method thereof

Also Published As

Publication number Publication date
DE60205193D1 (de) 2005-09-01
CN1412777A (zh) 2003-04-23
JP2003178574A (ja) 2003-06-27
KR100890612B1 (ko) 2009-03-27
KR20030030950A (ko) 2003-04-18
DE60205193T2 (de) 2006-05-24
EP1302948A1 (en) 2003-04-16
US6501697B1 (en) 2002-12-31
CN100447898C (zh) 2008-12-31
EP1302948B1 (en) 2005-07-27

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