GB0320339D0 - Resistance array reader - Google Patents

Resistance array reader

Info

Publication number
GB0320339D0
GB0320339D0 GBGB0320339.5A GB0320339A GB0320339D0 GB 0320339 D0 GB0320339 D0 GB 0320339D0 GB 0320339 A GB0320339 A GB 0320339A GB 0320339 D0 GB0320339 D0 GB 0320339D0
Authority
GB
United Kingdom
Prior art keywords
resistance array
array reader
reader
resistance
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0320339.5A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Priority to GBGB0320339.5A priority Critical patent/GB0320339D0/en
Publication of GB0320339D0 publication Critical patent/GB0320339D0/en
Priority to PCT/GB2004/003681 priority patent/WO2005022547A1/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
GBGB0320339.5A 2003-08-29 2003-08-29 Resistance array reader Ceased GB0320339D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0320339.5A GB0320339D0 (en) 2003-08-29 2003-08-29 Resistance array reader
PCT/GB2004/003681 WO2005022547A1 (en) 2003-08-29 2004-08-27 Resistance cross-point array reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0320339.5A GB0320339D0 (en) 2003-08-29 2003-08-29 Resistance array reader

Publications (1)

Publication Number Publication Date
GB0320339D0 true GB0320339D0 (en) 2003-10-01

Family

ID=28686619

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0320339.5A Ceased GB0320339D0 (en) 2003-08-29 2003-08-29 Resistance array reader

Country Status (2)

Country Link
GB (1) GB0320339D0 (en)
WO (1) WO2005022547A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9524483D0 (en) * 1995-11-30 1996-01-31 Philips Electronics Nv Light sensing array device and apparatus incorporating such
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
JP3800925B2 (en) * 2000-05-15 2006-07-26 日本電気株式会社 Magnetic random access memory circuit
US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier
US6574129B1 (en) * 2002-04-30 2003-06-03 Hewlett-Packard Development Company, L.P. Resistive cross point memory cell arrays having a cross-couple latch sense amplifier

Also Published As

Publication number Publication date
WO2005022547A1 (en) 2005-03-10

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)