KR100890612B1 - 감지 증폭기 및 데이터 판독 방법 - Google Patents

감지 증폭기 및 데이터 판독 방법 Download PDF

Info

Publication number
KR100890612B1
KR100890612B1 KR1020020061770A KR20020061770A KR100890612B1 KR 100890612 B1 KR100890612 B1 KR 100890612B1 KR 1020020061770 A KR1020020061770 A KR 1020020061770A KR 20020061770 A KR20020061770 A KR 20020061770A KR 100890612 B1 KR100890612 B1 KR 100890612B1
Authority
KR
South Korea
Prior art keywords
current
memory cell
sense
state
differential amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020020061770A
Other languages
English (en)
Korean (ko)
Other versions
KR20030030950A (ko
Inventor
퍼너프레데릭에이
반브룩클린앤드류엘
프릭크피터제이
이튼제임스알2세
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Publication of KR20030030950A publication Critical patent/KR20030030950A/ko
Application granted granted Critical
Publication of KR100890612B1 publication Critical patent/KR100890612B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020020061770A 2001-10-11 2002-10-10 감지 증폭기 및 데이터 판독 방법 Expired - Fee Related KR100890612B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/976,304 US6501697B1 (en) 2001-10-11 2001-10-11 High density memory sense amplifier
US09/976,304 2001-10-11

Publications (2)

Publication Number Publication Date
KR20030030950A KR20030030950A (ko) 2003-04-18
KR100890612B1 true KR100890612B1 (ko) 2009-03-27

Family

ID=25523969

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020061770A Expired - Fee Related KR100890612B1 (ko) 2001-10-11 2002-10-10 감지 증폭기 및 데이터 판독 방법

Country Status (7)

Country Link
US (1) US6501697B1 (https=)
EP (1) EP1302948B1 (https=)
JP (1) JP2003178574A (https=)
KR (1) KR100890612B1 (https=)
CN (1) CN100447898C (https=)
DE (1) DE60205193T2 (https=)
TW (1) TWI240282B (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426907B1 (en) * 2001-01-24 2002-07-30 Infineon Technologies North America Corp. Reference for MRAM cell
US6757188B2 (en) * 2002-05-22 2004-06-29 Hewlett-Packard Development Company, L.P. Triple sample sensing for magnetic random access memory (MRAM) with series diodes
US6590804B1 (en) * 2002-07-16 2003-07-08 Hewlett-Packard Development Company, L.P. Adjustable current mode differential amplifier
US6754123B2 (en) * 2002-10-01 2004-06-22 Hewlett-Packard Development Company, Lp. Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation
US6700814B1 (en) * 2002-10-30 2004-03-02 Motorola, Inc. Sense amplifier bias circuit for a memory having at least two distinct resistance states
JP3704128B2 (ja) * 2003-02-17 2005-10-05 株式会社東芝 磁気ランダムアクセスメモリとその読み出し方法
FR2853444B1 (fr) * 2003-04-02 2005-07-15 St Microelectronics Sa Amplificateur de lecture a double etage de lecture
GB0320339D0 (en) * 2003-08-29 2003-10-01 Isis Innovation Resistance array reader
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
US7038941B2 (en) * 2003-12-19 2006-05-02 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US7130235B2 (en) * 2004-09-03 2006-10-31 Hewlett-Packard Development Company, L.P. Method and apparatus for a sense amplifier
DE102004045219B4 (de) * 2004-09-17 2011-07-28 Qimonda AG, 81739 Anordnung und Verfahren zum Auslesen von Widerstandsspeicherzellen
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
US8395199B2 (en) 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US7495971B2 (en) 2006-04-19 2009-02-24 Infineon Technologies Ag Circuit and a method of determining the resistive state of a resistive memory cell
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
TWI312154B (en) * 2006-07-20 2009-07-11 Ind Tech Res Inst Multiple state sense amplifier for memory architecture
CN100590735C (zh) * 2006-08-23 2010-02-17 财团法人工业技术研究院 应用于存储器的多稳态读出放大器
US7522463B2 (en) * 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7778065B2 (en) * 2008-02-29 2010-08-17 International Business Machines Corporation Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices
US7813166B2 (en) * 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
US8482955B2 (en) 2011-02-25 2013-07-09 Micron Technology, Inc. Resistive memory sensing methods and devices
KR20130030616A (ko) * 2011-09-19 2013-03-27 에스케이하이닉스 주식회사 비휘발성 메모리 장치
US8750018B2 (en) * 2012-06-04 2014-06-10 Samsung Electronics Co., Ltd. Sense amplifier circuitry for resistive type memory
JP5867315B2 (ja) * 2012-06-28 2016-02-24 富士通株式会社 判定装置、および判定方法
US20160254060A1 (en) * 2013-03-15 2016-09-01 Taqua Wbh, Llc High Speed And Low Power Sense Amplifier
CN103325414A (zh) * 2013-05-21 2013-09-25 清华大学 一种rram存储器读电路
US9460785B2 (en) 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
US10008264B2 (en) 2014-10-23 2018-06-26 Hewlett Packard Enterprise Development Lp Memristive cross-bar array for determining a dot product
KR20170085126A (ko) 2014-11-18 2017-07-21 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 널링 증폭기를 구비한 멤리스티브 내적 엔진
US9520173B1 (en) * 2016-02-29 2016-12-13 Freescale Semiconductor, Inc. Magnetic random access memory (MRAM) and method of operation
DE102016110049A1 (de) * 2016-05-31 2017-11-30 Infineon Technologies Ag Ermitteln eines Zustands einer Speicherzelle
KR20170143125A (ko) * 2016-06-20 2017-12-29 삼성전자주식회사 기준전압을 생성하기 위한 메모리 셀을 포함하는 메모리 장치
JP2018163728A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリデバイス及びメモリデバイスの制御方法
CN110136759B (zh) * 2018-02-09 2021-01-12 上海磁宇信息科技有限公司 降低读操作对数据扰动的电路
CN109256158A (zh) * 2018-08-16 2019-01-22 歌尔股份有限公司 感测电路
CN113823342B (zh) * 2020-06-19 2024-12-06 长鑫存储技术(上海)有限公司 半导体集成电路以及存储器
US11295811B2 (en) * 2020-08-27 2022-04-05 Micron Technology, Inc. Increase of a sense current in memory
US12596484B2 (en) 2023-05-26 2026-04-07 SanDisk Technologies, Inc. Apparatus and method for two-step read of resistive random access memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0660676A (ja) * 1992-08-13 1994-03-04 Nippondenso Co Ltd 半導体メモリ装置
KR20010054408A (ko) * 1999-12-06 2001-07-02 윤종용 안정된 읽기 동작을 수행하는 반도체 메모리 장치 및그것의 읽기방법
JP2001185963A (ja) * 1999-10-29 2001-07-06 Hewlett Packard Co <Hp> 演算増幅器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
KR920013458A (ko) * 1990-12-12 1992-07-29 김광호 차동감지 증폭회로
US5608679A (en) * 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
US6169686B1 (en) 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US6259644B1 (en) 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6055178A (en) 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
JP3886669B2 (ja) * 1999-06-10 2007-02-28 株式会社東芝 半導体記憶装置
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6324093B1 (en) * 2000-09-15 2001-11-27 Hewlett-Packard Company Write-once thin-film memory
US6426907B1 (en) * 2001-01-24 2002-07-30 Infineon Technologies North America Corp. Reference for MRAM cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0660676A (ja) * 1992-08-13 1994-03-04 Nippondenso Co Ltd 半導体メモリ装置
JP2001185963A (ja) * 1999-10-29 2001-07-06 Hewlett Packard Co <Hp> 演算増幅器
KR20010054408A (ko) * 1999-12-06 2001-07-02 윤종용 안정된 읽기 동작을 수행하는 반도체 메모리 장치 및그것의 읽기방법

Also Published As

Publication number Publication date
TWI240282B (en) 2005-09-21
DE60205193D1 (de) 2005-09-01
CN1412777A (zh) 2003-04-23
JP2003178574A (ja) 2003-06-27
KR20030030950A (ko) 2003-04-18
DE60205193T2 (de) 2006-05-24
EP1302948A1 (en) 2003-04-16
US6501697B1 (en) 2002-12-31
CN100447898C (zh) 2008-12-31
EP1302948B1 (en) 2005-07-27

Similar Documents

Publication Publication Date Title
KR100890612B1 (ko) 감지 증폭기 및 데이터 판독 방법
KR101018014B1 (ko) 차동 감지 증폭기를 포함하는 정보 저장 장치
KR100939068B1 (ko) 정보 저장 장치 및 차동 증폭기
US6590804B1 (en) Adjustable current mode differential amplifier
US6256247B1 (en) Differential sense amplifiers for resistive cross point memory cell arrays
US6674679B1 (en) Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation
US6678189B2 (en) Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
US6754123B2 (en) Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation
US6456524B1 (en) Hybrid resistive cross point memory cell arrays and methods of making the same
JP4660529B2 (ja) 二重接合磁気メモリデバイスの読み出し方法および二重接合磁気メモリデバイスへの書き込み方法
KR20070083639A (ko) 전류 감지 증폭기, 메모리 디바이스 및 전류 감지 방법
JP2002535798A (ja) Ｍｒａｍ用の読出／書込構造
KR101123925B1 (ko) 판독 동작 수행 방법 및 시스템
US6834017B2 (en) Error detection system for an information storage device
US20050013182A1 (en) Systems and methods for sensing a memory element
KR101136038B1 (ko) 데이터 저장 디바이스, 메모리 셀 판독 동작 수행 방법 및시스템
US6826077B2 (en) Magnetic random access memory with reduced parasitic currents

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20130228

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20140228

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20150302

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20170228

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20180228

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20190228

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20200228

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220320

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220320