CN100447898C - 高密度存储器读出放大器 - Google Patents

高密度存储器读出放大器 Download PDF

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Publication number
CN100447898C
CN100447898C CNB021435979A CN02143597A CN100447898C CN 100447898 C CN100447898 C CN 100447898C CN B021435979 A CNB021435979 A CN B021435979A CN 02143597 A CN02143597 A CN 02143597A CN 100447898 C CN100447898 C CN 100447898C
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CN
China
Prior art keywords
current
memory cell
state
sense
memory
Prior art date
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Expired - Lifetime
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CNB021435979A
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English (en)
Chinese (zh)
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CN1412777A (zh
Inventor
F·A·佩尔纳
A·L·范布洛克林
P·J·弗里克
J·R·小易通
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1412777A publication Critical patent/CN1412777A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CNB021435979A 2001-10-11 2002-10-11 高密度存储器读出放大器 Expired - Lifetime CN100447898C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/976,304 US6501697B1 (en) 2001-10-11 2001-10-11 High density memory sense amplifier
US09/976304 2001-10-11

Publications (2)

Publication Number Publication Date
CN1412777A CN1412777A (zh) 2003-04-23
CN100447898C true CN100447898C (zh) 2008-12-31

Family

ID=25523969

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021435979A Expired - Lifetime CN100447898C (zh) 2001-10-11 2002-10-11 高密度存储器读出放大器

Country Status (7)

Country Link
US (1) US6501697B1 (https=)
EP (1) EP1302948B1 (https=)
JP (1) JP2003178574A (https=)
KR (1) KR100890612B1 (https=)
CN (1) CN100447898C (https=)
DE (1) DE60205193T2 (https=)
TW (1) TWI240282B (https=)

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US6754123B2 (en) * 2002-10-01 2004-06-22 Hewlett-Packard Development Company, Lp. Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation
US6700814B1 (en) * 2002-10-30 2004-03-02 Motorola, Inc. Sense amplifier bias circuit for a memory having at least two distinct resistance states
JP3704128B2 (ja) * 2003-02-17 2005-10-05 株式会社東芝 磁気ランダムアクセスメモリとその読み出し方法
FR2853444B1 (fr) * 2003-04-02 2005-07-15 St Microelectronics Sa Amplificateur de lecture a double etage de lecture
GB0320339D0 (en) * 2003-08-29 2003-10-01 Isis Innovation Resistance array reader
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
US7038941B2 (en) * 2003-12-19 2006-05-02 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US7130235B2 (en) * 2004-09-03 2006-10-31 Hewlett-Packard Development Company, L.P. Method and apparatus for a sense amplifier
DE102004045219B4 (de) * 2004-09-17 2011-07-28 Qimonda AG, 81739 Anordnung und Verfahren zum Auslesen von Widerstandsspeicherzellen
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
US8395199B2 (en) 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US7495971B2 (en) 2006-04-19 2009-02-24 Infineon Technologies Ag Circuit and a method of determining the resistive state of a resistive memory cell
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
TWI312154B (en) * 2006-07-20 2009-07-11 Ind Tech Res Inst Multiple state sense amplifier for memory architecture
CN100590735C (zh) * 2006-08-23 2010-02-17 财团法人工业技术研究院 应用于存储器的多稳态读出放大器
US7522463B2 (en) * 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7778065B2 (en) * 2008-02-29 2010-08-17 International Business Machines Corporation Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices
US7813166B2 (en) * 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
US8482955B2 (en) 2011-02-25 2013-07-09 Micron Technology, Inc. Resistive memory sensing methods and devices
KR20130030616A (ko) * 2011-09-19 2013-03-27 에스케이하이닉스 주식회사 비휘발성 메모리 장치
US8750018B2 (en) * 2012-06-04 2014-06-10 Samsung Electronics Co., Ltd. Sense amplifier circuitry for resistive type memory
JP5867315B2 (ja) * 2012-06-28 2016-02-24 富士通株式会社 判定装置、および判定方法
US20160254060A1 (en) * 2013-03-15 2016-09-01 Taqua Wbh, Llc High Speed And Low Power Sense Amplifier
CN103325414A (zh) * 2013-05-21 2013-09-25 清华大学 一种rram存储器读电路
US9460785B2 (en) 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
US10008264B2 (en) 2014-10-23 2018-06-26 Hewlett Packard Enterprise Development Lp Memristive cross-bar array for determining a dot product
KR20170085126A (ko) 2014-11-18 2017-07-21 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 널링 증폭기를 구비한 멤리스티브 내적 엔진
US9520173B1 (en) * 2016-02-29 2016-12-13 Freescale Semiconductor, Inc. Magnetic random access memory (MRAM) and method of operation
DE102016110049A1 (de) * 2016-05-31 2017-11-30 Infineon Technologies Ag Ermitteln eines Zustands einer Speicherzelle
KR20170143125A (ko) * 2016-06-20 2017-12-29 삼성전자주식회사 기준전압을 생성하기 위한 메모리 셀을 포함하는 메모리 장치
JP2018163728A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリデバイス及びメモリデバイスの制御方法
CN110136759B (zh) * 2018-02-09 2021-01-12 上海磁宇信息科技有限公司 降低读操作对数据扰动的电路
CN109256158A (zh) * 2018-08-16 2019-01-22 歌尔股份有限公司 感测电路
CN113823342B (zh) * 2020-06-19 2024-12-06 长鑫存储技术(上海)有限公司 半导体集成电路以及存储器
US11295811B2 (en) * 2020-08-27 2022-04-05 Micron Technology, Inc. Increase of a sense current in memory
US12596484B2 (en) 2023-05-26 2026-04-07 SanDisk Technologies, Inc. Apparatus and method for two-step read of resistive random access memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1062246A (zh) * 1990-12-12 1992-06-24 三星电子株式会社 差分读出放大器
CN1135659A (zh) * 1995-01-12 1996-11-13 三菱电机株式会社 具有动态可控阈电压的mos晶体管读出放大器
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays

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JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
JPH0660676A (ja) * 1992-08-13 1994-03-04 Nippondenso Co Ltd 半導体メモリ装置
US5608679A (en) * 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
US6169686B1 (en) 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US6262625B1 (en) * 1999-10-29 2001-07-17 Hewlett-Packard Co Operational amplifier with digital offset calibration
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JP3886669B2 (ja) * 1999-06-10 2007-02-28 株式会社東芝 半導体記憶装置
KR100347067B1 (ko) * 1999-12-06 2002-08-03 삼성전자 주식회사 안정된 읽기 동작을 수행하는 반도체 메모리 장치
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
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US6426907B1 (en) * 2001-01-24 2002-07-30 Infineon Technologies North America Corp. Reference for MRAM cell

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
CN1062246A (zh) * 1990-12-12 1992-06-24 三星电子株式会社 差分读出放大器
CN1135659A (zh) * 1995-01-12 1996-11-13 三菱电机株式会社 具有动态可控阈电压的mos晶体管读出放大器
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays

Also Published As

Publication number Publication date
TWI240282B (en) 2005-09-21
DE60205193D1 (de) 2005-09-01
CN1412777A (zh) 2003-04-23
JP2003178574A (ja) 2003-06-27
KR100890612B1 (ko) 2009-03-27
KR20030030950A (ko) 2003-04-18
DE60205193T2 (de) 2006-05-24
EP1302948A1 (en) 2003-04-16
US6501697B1 (en) 2002-12-31
EP1302948B1 (en) 2005-07-27

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Owner name: SAMSUNG ELECTRONICS CO., LTD

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Effective date: 20071228

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Effective date of registration: 20071228

Address after: Gyeonggi Do, South Korea

Applicant after: SAMSUNG ELECTRONICS Co.,Ltd.

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Applicant before: Hewlett-Packard Co.

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Granted publication date: 20081231