TWI238432B - Self-emitting element, display panel, display apparatus, and method of manufacturing self-emitting element - Google Patents
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- TWI238432B TWI238432B TW092134071A TW92134071A TWI238432B TW I238432 B TWI238432 B TW I238432B TW 092134071 A TW092134071 A TW 092134071A TW 92134071 A TW92134071 A TW 92134071A TW I238432 B TWI238432 B TW I238432B
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- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000605 extraction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 63
- 239000011241 protective layer Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000005192 partition Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
1238432 中,爲了將前述複複個發光層分離,故具有突出於前述射 出側的間隔壁,且其間隔壁的內面爲前述角度變換部,於 圍繞在其間隔壁的區城形成有前述保護層。 10. 如申請專利範圍第8項所記載的顯示面板’其 中,爲了將前述複數個發光層分離,故具有突出於前述射 出側的間隔壁,且具有由從其間隔壁突出於射出側的絕緣 材料所形成的突起; 其突起的內面爲前述角度變換部’在經由其突起所圍 繞的區域形成有前述保護層。 11. 一種顯示裝置,其特徵爲具有: 配置在電極間,藉由施加在前述電極間的電壓加以發 光的複數個發光層; 和覆蓋該些發光層的射出側,與外界形成界面的保護 層,且從前述複數個發光層射出的光在所對應的發光層之 面積內的前述界面,至少進行一次全反射之程度的厚度的 保護層; 和針對前述發光層而覆蓋前述保護層之相反側的反射 層; 和在前述發光層的圍,屬於從前述發光層射出的光, 並改變傳播至前述保護層內之光的方向,而成相對於前述 界面未滿臨界角的角度變換部的顯示面板; 和驅動前述顯示面板的前述發光層而顯示畫像的驅動 裝置。 12· —種自發光元件之製造方法,乃屬於具有: -3 - 1238432 配置在電極間,藉由施加在前述電極間的電壓加以發 光的發光層; 和覆蓋前述發光層的射出側,與外界形成界面的保護 層,且從前述發光層射出的光會在前述發光層之面積內的 前述界面,至少進行一次全反射之程度的厚度的保護層; 和針對前述發光層而覆蓋前述保護層之相反側的反射 曆, 和在前述發光層的周圍,屬於從前述發光層射出的 光,並改變傳播至前述保護層內之光的方向,而成爲相對 於前述界面未滿臨界角的角度變換部的自發光元件之製造 方法,其特徵爲具有: 爲了將前述發光層與其它發光層分離,故以突出於前述射 出側的間隔壁的內面作爲前述角度變換部的工程; 和於圍繞在前述間隔壁的區域形成前述保護層的工 1 3 · —種自發光元件之製造方法,乃屬於具有·· 配置在電極間,藉由施加在前述電極間的電壓加以發 光的發光層; 和覆蓋前述發光層的射出側,與外界形成界面的保護 層,且從前述發光層射出的光,在前述發光層的面積內的 前述界面,至少進行一次全反射之程度的厚度的保護層; 和針對前述發光層而覆蓋前述保護層之相反側的反射 暦, 和在前述發光層的周圍,屬於從前述發光層射出的 -4- 1238432 光,並改變傳播至前述保護層內之光的方向,而成爲相對 於前述界面未滿臨界角的角度變換部的自發光元件之製造 方法,其特徵爲具有: 爲了將前述發光層與其它發光層分離,故利用絕緣材 料來形成從突出於前述射出側的間隔壁突出至射出側的突 起,且以該突起的內面作爲前述角度變換部的工程; 和在經由該突起所圍繞的區域形成前述保護層的工 程。 14. 一種自發光元件,其特徵爲具有: 包括發光元件的顯示體層; 和具備有位於前述顯示體層的射出方向,將從前述發 光元件所輸出的輸出光之行進方向向著前述射出方向的角 度變換部的透明輸出層; 前述輸出層的折射率是等同於或大於前述發光元件之 折射率。 1 5 ·如申請專利範圍第1 4項所記載的自發光元件, 其中’前述角度變換部爲微透鏡,微稜鏡或是微反射鏡。 16·如申請專利範圍第1 4項所記載的自發光元件, 其中,前述顯示體層是以隔著前述發光元件的方式,具備 有折射率比前述發光元件高的透明電極層。 1 7 ·如申請專利範圍第1 6項所記載的自發光元件, 其中’在前述透明電極層和前述輸出層的界面具有反射防 止層。 18.如申請專利範圍第1 4項所記載的自發光元件, -5- 1238432 其中,在前述輸出層的射出方向,具有透明的密封層,且 在前述輸出層和前述密封層之間,塡充有折射率約爲1的 非活性氣體。 19. 一種顯示面板,其特徵爲: 具有: 包括發光元件的顯示體層; 和具備有位在前述顯示體層的射出方向,且將從前述 發光元件所輸出的輸出光的行進方向向著前述射出方向的 角度變換部的透明輸出層; 具有複數個前述輸出層的折射率是等同於或大於前述 發光元件之折射率的自發光元件,且前述自發光元件是二 次元地配置爲矩陣狀。 20. —種顯示裝置,其特徵爲: 具有:包括發光元件的顯示體層; 和具備有位在前述顯示體層之射出方向,且將從前述 發光元件輸出的輸出光的行進方向向著前述射出方向的角 度變換部的透明輸出層; 前述輸出層的折射率是具有:具有複數個等同於或是 大於前述發光元件之折射率的自發光元件’且前述自發光 元件爲二次元地配置在矩陣狀的顯示面板;和驅動該顯示 面板的前述顯示體層來顯示畫像的驅動裝置。 21. —種自發光元件,其特徵爲具有: 配置在電極間,藉由施加在前述電極間的電壓加以發 光的發光層; -6 - 1238432 和覆蓋前述發光層的射出側,與外 層,且從前述發光層射出的光,在前述 前述界面,至少進行一次全反射之程度 和針對前述發光層而覆蓋前述保護 層; 和在前述發光層的周圍,屬於從ϊ 光,並改變傳播至前述保護層內之光的 於前述界面未滿臨界角的角度變換部; 前述保護層的折射率是等同於或是 折射率的自發光元件。 •形成界面的保護 :光層的面積內的 厚度的保護層; 之相反側的反射 述發光層射出的 向,而成爲相對 於前述發光層之 -7-
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002365522A JP4032956B2 (ja) | 2002-12-17 | 2002-12-17 | 自発光素子、表示パネル、表示装置および自発光素子の製造方法 |
JP2003049396A JP2004259606A (ja) | 2003-02-26 | 2003-02-26 | 表示体および表示装置 |
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TW200420192A TW200420192A (en) | 2004-10-01 |
TWI238432B true TWI238432B (en) | 2005-08-21 |
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TW092134071A TWI238432B (en) | 2002-12-17 | 2003-12-03 | Self-emitting element, display panel, display apparatus, and method of manufacturing self-emitting element |
Country Status (4)
Country | Link |
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US (2) | US7492092B2 (zh) |
KR (1) | KR100567653B1 (zh) |
CN (1) | CN1231876C (zh) |
TW (1) | TWI238432B (zh) |
Cited By (4)
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US7800294B2 (en) | 2006-08-14 | 2010-09-21 | Samsung Sdi Co., Ltd. | Light emission device and display device using the light emission device as light source |
TWI557897B (zh) * | 2012-02-17 | 2016-11-11 | 杰奧萊德股份有限公司 | 顯示裝置及製造顯示裝置之方法 |
US10371983B2 (en) | 2016-07-26 | 2019-08-06 | Lg Display Co., Ltd. | Display device |
TWI683432B (zh) * | 2016-12-14 | 2020-01-21 | 南韓商Lg顯示器股份有限公司 | 顯示裝置 |
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JP4252297B2 (ja) | 2002-12-12 | 2009-04-08 | 株式会社日立製作所 | 発光素子およびこの発光素子を用いた表示装置 |
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- 2003-12-17 CN CNB2003101212822A patent/CN1231876C/zh not_active Expired - Lifetime
- 2003-12-17 KR KR1020030092636A patent/KR100567653B1/ko active IP Right Grant
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TWI683432B (zh) * | 2016-12-14 | 2020-01-21 | 南韓商Lg顯示器股份有限公司 | 顯示裝置 |
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US20090115330A1 (en) | 2009-05-07 |
CN1508765A (zh) | 2004-06-30 |
US7821202B2 (en) | 2010-10-26 |
KR100567653B1 (ko) | 2006-04-05 |
CN1231876C (zh) | 2005-12-14 |
US7492092B2 (en) | 2009-02-17 |
KR20040054543A (ko) | 2004-06-25 |
TW200420192A (en) | 2004-10-01 |
US20040160165A1 (en) | 2004-08-19 |
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