TWI236577B - Positive resist composition - Google Patents

Positive resist composition Download PDF

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Publication number
TWI236577B
TWI236577B TW090112241A TW90112241A TWI236577B TW I236577 B TWI236577 B TW I236577B TW 090112241 A TW090112241 A TW 090112241A TW 90112241 A TW90112241 A TW 90112241A TW I236577 B TWI236577 B TW I236577B
Authority
TW
Taiwan
Prior art keywords
group
compound
carbon atoms
patent application
acid
Prior art date
Application number
TW090112241A
Other languages
English (en)
Chinese (zh)
Inventor
Kunihiko Kodama
Shinichi Kanna
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TWI236577B publication Critical patent/TWI236577B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D275/00—Heterocyclic compounds containing 1,2-thiazole or hydrogenated 1,2-thiazole rings
    • C07D275/04—Heterocyclic compounds containing 1,2-thiazole or hydrogenated 1,2-thiazole rings condensed with carbocyclic rings or ring systems
    • C07D275/06—Heterocyclic compounds containing 1,2-thiazole or hydrogenated 1,2-thiazole rings condensed with carbocyclic rings or ring systems with hetero atoms directly attached to the ring sulfur atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Thiazole And Isothizaole Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW090112241A 2000-05-22 2001-05-22 Positive resist composition TWI236577B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000150217A JP4177952B2 (ja) 2000-05-22 2000-05-22 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
TWI236577B true TWI236577B (en) 2005-07-21

Family

ID=18655962

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090112241A TWI236577B (en) 2000-05-22 2001-05-22 Positive resist composition

Country Status (5)

Country Link
US (1) US6605409B2 (enExample)
EP (1) EP1158363B1 (enExample)
JP (1) JP4177952B2 (enExample)
KR (1) KR100773335B1 (enExample)
TW (1) TWI236577B (enExample)

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JP4270449B2 (ja) * 2001-07-31 2009-06-03 株式会社トクヤマ 新規なオニウム塩、新規なオニウム塩を含む非水系電池用電解液、およびオニウム塩を含む電解液を使用した負電極の最適化方法
US6818379B2 (en) * 2001-12-03 2004-11-16 Sumitomo Chemical Company, Limited Sulfonium salt and use thereof
TW200304042A (en) * 2002-02-22 2003-09-16 Jsr Corp Radiation-sensitive resin composition
JP4168095B2 (ja) * 2002-05-24 2008-10-22 サンノプコ株式会社 感光性樹脂組成物
WO2004002955A2 (en) * 2002-06-26 2004-01-08 Arch Specialty Chemicals, Inc. Photosensitive compositions
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4426526B2 (ja) * 2003-07-17 2010-03-03 ハネウエル・インターナシヨナル・インコーポレーテツド 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法
JP4418659B2 (ja) * 2003-09-26 2010-02-17 富士フイルム株式会社 ポジ型電子線、ｘ線又はｅｕｖ光用レジスト組成物及びそれを用いたパターン形成方法
US20050148679A1 (en) * 2003-12-29 2005-07-07 Chingfan Chiu Aryl sulfonium salt, polymerizable composition and polymerization method of the same
KR101055215B1 (ko) * 2004-08-30 2011-08-08 동우 화인켐 주식회사 화학증폭형 포지티브형 레지스트 조성물
JP2006078760A (ja) 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd 電子線またはｅｕｖ（極端紫外光）用レジスト組成物及びレジストパターン形成方法
JP4452632B2 (ja) 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4796792B2 (ja) * 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
DE602006015319D1 (de) * 2005-07-01 2010-08-19 Basf Se Sulfoniumsalzinitiatoren
JP4996898B2 (ja) * 2006-03-27 2012-08-08 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
US20080299487A1 (en) * 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
JP5002393B2 (ja) * 2006-09-28 2012-08-15 富士フイルム株式会社 レジスト組成物およびこれを用いたパターン形成方法
EP1906248A1 (en) * 2006-09-28 2008-04-02 FUJIFILM Corporation Resist composition and pattern forming method using the same
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
TW201106101A (en) * 2009-06-01 2011-02-16 Fujifilm Electronic Materials Chemically amplified positive photoresist composition
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
WO2012053527A1 (ja) * 2010-10-22 2012-04-26 Jsr株式会社 パターン形成方法及び感放射線性組成物
KR101229312B1 (ko) 2011-01-03 2013-02-04 금호석유화학 주식회사 술포늄 화합물, 광산발생제 및 이의 제조방법
JP5807552B2 (ja) * 2012-01-13 2015-11-10 信越化学工業株式会社 パターン形成方法及びレジスト組成物
US9529265B2 (en) 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
JP6782540B2 (ja) * 2015-12-01 2020-11-11 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び化合物
JP2018109701A (ja) * 2017-01-04 2018-07-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターン形成方法
TWI753105B (zh) * 2017-02-22 2022-01-21 日商信越化學工業股份有限公司 圖型形成方法
JP6922849B2 (ja) 2018-05-25 2021-08-18 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
JP7031537B2 (ja) 2018-09-05 2022-03-08 信越化学工業株式会社 スルホニウム化合物、ポジ型レジスト組成物、及びレジストパターン形成方法
JP7099250B2 (ja) 2018-10-25 2022-07-12 信越化学工業株式会社 オニウム塩、ネガ型レジスト組成物及びレジストパターン形成方法
JP7388346B2 (ja) * 2020-02-14 2023-11-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7494707B2 (ja) * 2020-04-01 2024-06-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7484846B2 (ja) * 2020-09-28 2024-05-16 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法
CN118679428A (zh) * 2022-02-16 2024-09-20 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法、电子器件的制造方法及化合物
TW202402722A (zh) * 2022-07-14 2024-01-16 美商羅門哈斯電子材料有限公司 光活性化合物、包含其之光阻劑組成物及圖案形成方法

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US5411998A (en) * 1992-07-24 1995-05-02 Loctite Limited Curing anaerobic compositions through thick bondlines
JPH09258435A (ja) 1996-03-22 1997-10-03 Fuji Photo Film Co Ltd ポジ型感光性組成物
KR100571313B1 (ko) 1998-03-17 2006-04-17 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
JP3851440B2 (ja) * 1998-04-22 2006-11-29 富士写真フイルム株式会社 ポジ型感光性組成物

Also Published As

Publication number Publication date
US20020006578A1 (en) 2002-01-17
EP1158363A1 (en) 2001-11-28
KR20010107656A (ko) 2001-12-07
JP4177952B2 (ja) 2008-11-05
US6605409B2 (en) 2003-08-12
EP1158363B1 (en) 2014-01-22
KR100773335B1 (ko) 2007-11-05
JP2001330947A (ja) 2001-11-30

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