TWI227744B - Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them - Google Patents

Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them Download PDF

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Publication number
TWI227744B
TWI227744B TW092116229A TW92116229A TWI227744B TW I227744 B TWI227744 B TW I227744B TW 092116229 A TW092116229 A TW 092116229A TW 92116229 A TW92116229 A TW 92116229A TW I227744 B TWI227744 B TW I227744B
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Taiwan
Prior art keywords
sintered compact
sintered body
target
relative density
oxide sintered
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TW092116229A
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English (en)
Chinese (zh)
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TW200402476A (en
Inventor
Ryo Suzuki
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Nikko Materials Co Ltd
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Publication of TW200402476A publication Critical patent/TW200402476A/zh
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/486Fine ceramics
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/486Fine ceramics
    • C04B35/488Composites
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206Magnesium oxides or oxide-forming salts thereof
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225Yttrium oxide or oxide-forming salts thereof
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227Lanthanum oxide or oxide-forming salts thereof
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
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    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607Thermal properties, e.g. thermal expansion coefficient

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  • Chemical & Material Sciences (AREA)
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  • Ceramic Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
TW092116229A 2002-08-06 2003-06-16 Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them TWI227744B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002228165A JP4544501B2 (ja) 2002-08-06 2002-08-06 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法

Publications (2)

Publication Number Publication Date
TW200402476A TW200402476A (en) 2004-02-16
TWI227744B true TWI227744B (en) 2005-02-11

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TW092116229A TWI227744B (en) 2002-08-06 2003-06-16 Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them

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US (1) US7252794B2 (https=)
JP (1) JP4544501B2 (https=)
KR (1) KR100642929B1 (https=)
MY (1) MY142079A (https=)
TW (1) TWI227744B (https=)
WO (1) WO2004016824A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402862B (zh) * 2006-03-15 2013-07-21 Sumitomo Metal Mining Co 氧化物燒結體、其製法、使用它之透明導電膜之製法與所得到的透明導電膜

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JP4351213B2 (ja) * 2003-09-03 2009-10-28 日鉱金属株式会社 スパッタリング用ターゲット及びその製造方法
JP4522991B2 (ja) * 2004-03-01 2010-08-11 日鉱金属株式会社 高純度Ru粉末の製造方法
RU2380455C2 (ru) * 2005-06-28 2010-01-27 Ниппон Майнинг Энд Металз Ко., Лтд. Распыляемая мишень на основе оксид галлия-оксид цинка, способ формирования прозрачной проводящей пленки и прозрачная проводящая пленка
EP1897968B1 (en) * 2005-06-28 2013-08-07 JX Nippon Mining & Metals Corporation Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film
EP2003226B1 (en) * 2006-02-22 2013-04-24 JX Nippon Mining & Metals Corporation Sintered sputtering target made of high-melting metals
SG11202011990SA (en) * 2018-08-09 2021-01-28 Jx Nippon Mining & Metals Corp Sputtering target, granular film, and perpendicular magnetic recording medium
KR20230099536A (ko) 2021-12-27 2023-07-04 삼성전자주식회사 배선 구조체 및 이를 포함하는 장치

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JPH0656503A (ja) * 1992-08-10 1994-03-01 Showa Denko Kk Ito焼結体
DE4421007A1 (de) * 1994-06-18 1995-12-21 Philips Patentverwaltung Elektronisches Bauteil und Verfahren zu seiner Herstellung
JP3710021B2 (ja) 1997-06-03 2005-10-26 三井金属鉱業株式会社 酸化錫−酸化第一アンチモン焼結体ターゲットおよびその製造方法
JP3636914B2 (ja) * 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット
JP3768007B2 (ja) 1998-06-17 2006-04-19 株式会社日鉱マテリアルズ 高純度SrxBiyTa2O5+x+3y/2スパッタリングターゲット材
JP2000034563A (ja) * 1998-07-14 2000-02-02 Japan Energy Corp 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット
JP2000128638A (ja) 1998-10-30 2000-05-09 Kyocera Corp ルテニウム酸ストロンチウム焼結体とその製造方法及びこれを用いたスパッタリングターゲット
US6132487A (en) * 1998-11-11 2000-10-17 Nikko Materials Company, Limited Mixed powder for powder metallurgy, sintered compact of powder metallurgy, and methods for the manufacturing thereof
JP2000247739A (ja) * 1999-02-25 2000-09-12 Vacuum Metallurgical Co Ltd 高密度Pt系金属含有金属導電性酸化物およびその製造方法
JP3745553B2 (ja) * 1999-03-04 2006-02-15 富士通株式会社 強誘電体キャパシタ、半導体装置の製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402862B (zh) * 2006-03-15 2013-07-21 Sumitomo Metal Mining Co 氧化物燒結體、其製法、使用它之透明導電膜之製法與所得到的透明導電膜

Also Published As

Publication number Publication date
JP4544501B2 (ja) 2010-09-15
US20060071197A1 (en) 2006-04-06
KR20050030211A (ko) 2005-03-29
KR100642929B1 (ko) 2006-11-10
JP2004068073A (ja) 2004-03-04
WO2004016824A1 (ja) 2004-02-26
US7252794B2 (en) 2007-08-07
MY142079A (en) 2010-08-30
TW200402476A (en) 2004-02-16

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