TWI221638B - Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer - Google Patents
Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer Download PDFInfo
- Publication number
- TWI221638B TWI221638B TW92103031A TW92103031A TWI221638B TW I221638 B TWI221638 B TW I221638B TW 92103031 A TW92103031 A TW 92103031A TW 92103031 A TW92103031 A TW 92103031A TW I221638 B TWI221638 B TW I221638B
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- group iii
- group
- iii nitride
- substrate
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 160
- 239000004065 semiconductor Substances 0.000 title claims abstract description 144
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims abstract description 141
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 80
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 42
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 76
- 229910052594 sapphire Inorganic materials 0.000 claims description 42
- 239000010980 sapphire Substances 0.000 claims description 42
- 239000002994 raw material Substances 0.000 claims description 39
- 229910021529 ammonia Inorganic materials 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000012071 phase Substances 0.000 claims description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 24
- 239000010410 layer Substances 0.000 description 144
- 229910002601 GaN Inorganic materials 0.000 description 84
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 84
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 34
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 31
- 239000012159 carrier gas Substances 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 16
- 238000001784 detoxification Methods 0.000 description 15
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 12
- 230000006698 induction Effects 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000005187 foaming Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- -1 nitride nitride Chemical class 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OCFSGVNHPVWWKD-UHFFFAOYSA-N butylaluminum Chemical compound [Al].[CH2]CCC OCFSGVNHPVWWKD-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- YMBBYINYHYQUGH-UHFFFAOYSA-N butylindium Chemical compound CCCC[In] YMBBYINYHYQUGH-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 101100518501 Mus musculus Spp1 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002038841A JP3656606B2 (ja) | 2002-02-15 | 2002-02-15 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200307313A TW200307313A (en) | 2003-12-01 |
| TWI221638B true TWI221638B (en) | 2004-10-01 |
Family
ID=27780051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92103031A TWI221638B (en) | 2002-02-15 | 2003-02-14 | Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3656606B2 (enExample) |
| KR (2) | KR100659520B1 (enExample) |
| CN (1) | CN100338733C (enExample) |
| TW (1) | TWI221638B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100524624C (zh) * | 2004-01-26 | 2009-08-05 | 昭和电工株式会社 | Ⅲ族氮化物半导体多层结构 |
| JP2005244202A (ja) * | 2004-01-26 | 2005-09-08 | Showa Denko Kk | Ｉｉｉ族窒化物半導体積層物 |
| US7935955B2 (en) | 2004-01-26 | 2011-05-03 | Showa Denko K.K. | Group III nitride semiconductor multilayer structure |
| WO2005086241A1 (en) | 2004-03-04 | 2005-09-15 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
| JP4901115B2 (ja) | 2004-03-04 | 2012-03-21 | 昭和電工株式会社 | 窒化ガリウム系半導体素子 |
| WO2005088738A1 (en) | 2004-03-12 | 2005-09-22 | Showa Denko K.K. | Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same |
| US7495261B2 (en) | 2004-03-18 | 2009-02-24 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device and method of producing the same |
| US7655491B2 (en) | 2004-05-12 | 2010-02-02 | Showa Denko K.K. | P-type Group III nitride semiconductor and production method thereof |
| JP2006229219A (ja) * | 2004-05-12 | 2006-08-31 | Showa Denko Kk | ＩＩＩ族窒化物ｐ型半導体およびその製造方法 |
| JP4833616B2 (ja) | 2004-09-13 | 2011-12-07 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体の製造方法 |
| US7652299B2 (en) | 2005-02-14 | 2010-01-26 | Showa Denko K.K. | Nitride semiconductor light-emitting device and method for fabrication thereof |
| KR100926094B1 (ko) | 2005-03-09 | 2009-11-11 | 쇼와 덴코 가부시키가이샤 | 질화물 반도체 발광 소자 및 그 제조 방법 |
| US8076165B2 (en) | 2005-04-01 | 2011-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method |
| JP4432827B2 (ja) | 2005-04-26 | 2010-03-17 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板 |
| US7951617B2 (en) | 2005-10-06 | 2011-05-31 | Showa Denko K.K. | Group III nitride semiconductor stacked structure and production method thereof |
| JP2007220745A (ja) * | 2006-02-14 | 2007-08-30 | Showa Denko Kk | ＩＩＩ族窒化物ｐ型半導体の製造方法 |
| JPWO2007129773A1 (ja) | 2006-05-10 | 2009-09-17 | 昭和電工株式会社 | Ｉｉｉ族窒化物化合物半導体積層構造体 |
| JP5250856B2 (ja) | 2006-06-13 | 2013-07-31 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
| JP2009123718A (ja) | 2007-01-16 | 2009-06-04 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ |
| JP4993627B2 (ja) * | 2009-03-24 | 2012-08-08 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体層の製造方法 |
| CN103460359A (zh) * | 2011-04-05 | 2013-12-18 | 住友电气工业株式会社 | 制造氮化物电子设备的方法 |
| JP5948698B2 (ja) * | 2012-04-13 | 2016-07-06 | パナソニックＩｐマネジメント株式会社 | 紫外発光素子およびその製造方法 |
| JP6442957B2 (ja) * | 2014-09-29 | 2018-12-26 | 日亜化学工業株式会社 | 窒化物半導体テンプレートの製造方法 |
| CN107039250B (zh) * | 2016-02-03 | 2018-08-21 | 中晟光电设备（上海）股份有限公司 | 一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途 |
| JP7429522B2 (ja) * | 2019-11-22 | 2024-02-08 | 住友化学株式会社 | Ｉｉｉ族窒化物積層基板および半導体素子 |
| JP7535399B2 (ja) * | 2020-07-08 | 2024-08-16 | 住友化学株式会社 | Ｉｉｉ族窒化物積層物、半導体素子およびｉｉｉ族窒化物積層物の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JPH08264886A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 半導体レーザ素子およびその製造方法 |
| JP3491492B2 (ja) * | 1997-04-09 | 2004-01-26 | 松下電器産業株式会社 | 窒化ガリウム結晶の製造方法 |
| CN1044840C (zh) * | 1997-07-24 | 1999-08-25 | 北京大学 | GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法 |
| JP3615081B2 (ja) * | 1999-03-30 | 2005-01-26 | 古河電気工業株式会社 | ＧａＮ単結晶の作製方法 |
| CN1313412A (zh) * | 2000-03-10 | 2001-09-19 | 广镓光电股份有限公司 | 在单晶基板上形成第三族氮化物外延层方法、制品及设备 |
| KR100319300B1 (ko) * | 2000-03-23 | 2002-01-04 | 윤종용 | 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자 |
| JP3285341B2 (ja) * | 2000-06-01 | 2002-05-27 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
-
2002
- 2002-02-15 JP JP2002038841A patent/JP3656606B2/ja not_active Expired - Lifetime
-
2003
- 2003-02-14 KR KR1020047012652A patent/KR100659520B1/ko not_active Expired - Lifetime
- 2003-02-14 CN CNB038050781A patent/CN100338733C/zh not_active Expired - Lifetime
- 2003-02-14 TW TW92103031A patent/TWI221638B/zh not_active IP Right Cessation
- 2003-02-14 KR KR1020067010518A patent/KR100692267B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN100338733C (zh) | 2007-09-19 |
| JP3656606B2 (ja) | 2005-06-08 |
| KR20040079443A (ko) | 2004-09-14 |
| TW200307313A (en) | 2003-12-01 |
| KR20060079259A (ko) | 2006-07-05 |
| CN1639393A (zh) | 2005-07-13 |
| KR100659520B1 (ko) | 2006-12-20 |
| KR100692267B1 (ko) | 2007-03-12 |
| JP2003243302A (ja) | 2003-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI221638B (en) | Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer | |
| US6852161B2 (en) | Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device | |
| US8882910B2 (en) | AlGaN substrate and production method thereof | |
| CN102024887B (zh) | 含有铝的氮化物中间层的制造方法、氮化物层的制造方法和氮化物半导体元件的制造方法 | |
| JPWO2010032423A1 (ja) | Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子並びにランプ、ｉｉｉ族窒化物半導体発光素子ウエーハの発光波長分布のばらつき低減方法 | |
| JP5307975B2 (ja) | 窒化物系半導体自立基板及び窒化物系半導体発光デバイス用エピタキシャル基板 | |
| US20110003420A1 (en) | Fabrication method of gallium nitride-based compound semiconductor | |
| US7951617B2 (en) | Group III nitride semiconductor stacked structure and production method thereof | |
| JP4996448B2 (ja) | 半導体基板の作成方法 | |
| US20070221954A1 (en) | Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same | |
| JP3940673B2 (ja) | Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法 | |
| JP2007103774A (ja) | Ｉｉｉ族窒化物半導体積層構造体およびその製造方法 | |
| JP4833616B2 (ja) | Ｉｉｉ族窒化物半導体の製造方法 | |
| US8236103B2 (en) | Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer | |
| TW546850B (en) | Manufacturing method for crystallization of group III nitride semiconductor, manufacturing method for gallium nitride compound semiconductor, gallium nitride compound semiconductor, gallium nitride compound semiconductor light emitting elements and light | |
| JP3991823B2 (ja) | Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ | |
| JP4222287B2 (ja) | Ｉｉｉ族窒化物半導体結晶の製造方法 | |
| JP2012204540A (ja) | 半導体装置およびその製造方法 | |
| JP2008034444A (ja) | Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子及びランプ | |
| KR100742986B1 (ko) | 컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법 | |
| JP3214349B2 (ja) | ＩｎＧａＮ層を有する半導体ウエハ及びその製造方法並びにそれを具備する発光素子 | |
| Amano et al. | Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |