TWI221638B - Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer - Google Patents

Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer Download PDF

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Publication number
TWI221638B
TWI221638B TW092103031A TW92103031A TWI221638B TW I221638 B TWI221638 B TW I221638B TW 092103031 A TW092103031 A TW 092103031A TW 92103031 A TW92103031 A TW 92103031A TW I221638 B TWI221638 B TW I221638B
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TW
Taiwan
Prior art keywords
nitride semiconductor
group iii
group
iii nitride
substrate
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TW092103031A
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English (en)
Chinese (zh)
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TW200307313A (en
Inventor
Hisayuki Miki
Tetsuo Sakurai
Mineo Okuyama
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Showa Denko Kk
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Publication of TW200307313A publication Critical patent/TW200307313A/zh
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Publication of TWI221638B publication Critical patent/TWI221638B/zh

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TW092103031A 2002-02-15 2003-02-14 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer TWI221638B (en)

Applications Claiming Priority (1)

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JP2002038841A JP3656606B2 (ja) 2002-02-15 2002-02-15 Ｉｉｉ族窒化物半導体結晶の製造方法

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TW200307313A TW200307313A (en) 2003-12-01
TWI221638B true TWI221638B (en) 2004-10-01

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JP (1) JP3656606B2 (enExample)
KR (2) KR100692267B1 (enExample)
CN (1) CN100338733C (enExample)
TW (1) TWI221638B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物
WO2005071720A1 (en) 2004-01-26 2005-08-04 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
TWI258873B (en) * 2004-01-26 2006-07-21 Showa Denko Kk Group III nitride semiconductor multilayer structure
WO2005086241A1 (en) 2004-03-04 2005-09-15 Showa Denko K.K. Gallium nitride-based semiconductor device
JP4901115B2 (ja) 2004-03-04 2012-03-21 昭和電工株式会社 窒化ガリウム系半導体素子
WO2005088738A1 (en) 2004-03-12 2005-09-22 Showa Denko K.K. Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
US7495261B2 (en) 2004-03-18 2009-02-24 Showa Denko K.K. Group III nitride semiconductor light-emitting device and method of producing the same
JP2006229219A (ja) * 2004-05-12 2006-08-31 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体およびその製造方法
WO2005109478A1 (en) * 2004-05-12 2005-11-17 Showa Denko K.K. P-type group iii nitride semiconductor and production method thereof
JP4833616B2 (ja) * 2004-09-13 2011-12-07 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法
US7652299B2 (en) 2005-02-14 2010-01-26 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
KR100926094B1 (ko) 2005-03-09 2009-11-11 쇼와 덴코 가부시키가이샤 질화물 반도체 발광 소자 및 그 제조 방법
WO2006112167A1 (ja) * 2005-04-01 2006-10-26 Sharp Kabushiki Kaisha ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
JP4432827B2 (ja) 2005-04-26 2010-03-17 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
US7951617B2 (en) 2005-10-06 2011-05-31 Showa Denko K.K. Group III nitride semiconductor stacked structure and production method thereof
JP2007220745A (ja) * 2006-02-14 2007-08-30 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体の製造方法
WO2007129773A1 (ja) 2006-05-10 2007-11-15 Showa Denko K.K. Iii族窒化物化合物半導体積層構造体
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP2009123718A (ja) 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
JP4993627B2 (ja) * 2009-03-24 2012-08-08 古河機械金属株式会社 Ｉｉｉ族窒化物半導体層の製造方法
US20140004668A1 (en) * 2011-04-05 2014-01-02 Sumitomo Electric Industries, Ltd. Method for manufacturing nitride electronic devices
JP5948698B2 (ja) * 2012-04-13 2016-07-06 パナソニックＩｐマネジメント株式会社 紫外発光素子およびその製造方法
JP6442957B2 (ja) * 2014-09-29 2018-12-26 日亜化学工業株式会社 窒化物半導体テンプレートの製造方法
CN107039250B (zh) * 2016-02-03 2018-08-21 中晟光电设备（上海）股份有限公司 一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途
JP7429522B2 (ja) 2019-11-22 2024-02-08 住友化学株式会社 Ｉｉｉ族窒化物積層基板および半導体素子
JP7535399B2 (ja) * 2020-07-08 2024-08-16 住友化学株式会社 Ｉｉｉ族窒化物積層物、半導体素子およびｉｉｉ族窒化物積層物の製造方法
CN116525407A (zh) * 2022-01-20 2023-08-01 中国科学院苏州纳米技术与纳米仿生研究所 Iii族氮化物基半导体材料及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08264886A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 半導体レーザ素子およびその製造方法
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
CN1044840C (zh) * 1997-07-24 1999-08-25 北京大学 GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
JP3615081B2 (ja) * 1999-03-30 2005-01-26 古河電気工業株式会社 ＧａＮ単結晶の作製方法
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备
KR100319300B1 (ko) * 2000-03-23 2002-01-04 윤종용 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
JP3285341B2 (ja) * 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法

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Publication number Publication date
CN1639393A (zh) 2005-07-13
KR100692267B1 (ko) 2007-03-12
CN100338733C (zh) 2007-09-19
KR20060079259A (ko) 2006-07-05
JP3656606B2 (ja) 2005-06-08
KR100659520B1 (ko) 2006-12-20
KR20040079443A (ko) 2004-09-14
JP2003243302A (ja) 2003-08-29
TW200307313A (en) 2003-12-01

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