CN100338733C - Ⅲ族氮化物半导体晶体及其制造方法以及ⅲ族氮化物半导体外延晶片 - Google Patents

Ⅲ族氮化物半导体晶体及其制造方法以及ⅲ族氮化物半导体外延晶片 Download PDF

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Publication number
CN100338733C
CN100338733C CNB038050781A CN03805078A CN100338733C CN 100338733 C CN100338733 C CN 100338733C CN B038050781 A CNB038050781 A CN B038050781A CN 03805078 A CN03805078 A CN 03805078A CN 100338733 C CN100338733 C CN 100338733C
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group iii
nitride semiconductor
iii nitride
substrate
layer
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CN1639393A (zh
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三木久幸
樱井哲朗
奥山峰夫
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Toyoda Gosei Co Ltd
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Showa Denko KK
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CNB038050781A 2002-02-15 2003-02-14 Ⅲ族氮化物半导体晶体及其制造方法以及ⅲ族氮化物半导体外延晶片 Expired - Lifetime CN100338733C (zh)

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JP38841/2002 2002-02-15
JP2002038841A JP3656606B2 (ja) 2002-02-15 2002-02-15 Ｉｉｉ族窒化物半導体結晶の製造方法

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CN1639393A CN1639393A (zh) 2005-07-13
CN100338733C true CN100338733C (zh) 2007-09-19

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KR (2) KR100659520B1 (enExample)
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TW (1) TWI221638B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100524624C (zh) * 2004-01-26 2009-08-05 昭和电工株式会社 Ⅲ族氮化物半导体多层结构
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物
US7935955B2 (en) 2004-01-26 2011-05-03 Showa Denko K.K. Group III nitride semiconductor multilayer structure
WO2005086241A1 (en) 2004-03-04 2005-09-15 Showa Denko K.K. Gallium nitride-based semiconductor device
JP4901115B2 (ja) 2004-03-04 2012-03-21 昭和電工株式会社 窒化ガリウム系半導体素子
WO2005088738A1 (en) 2004-03-12 2005-09-22 Showa Denko K.K. Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
US7495261B2 (en) 2004-03-18 2009-02-24 Showa Denko K.K. Group III nitride semiconductor light-emitting device and method of producing the same
US7655491B2 (en) 2004-05-12 2010-02-02 Showa Denko K.K. P-type Group III nitride semiconductor and production method thereof
JP2006229219A (ja) * 2004-05-12 2006-08-31 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体およびその製造方法
JP4833616B2 (ja) 2004-09-13 2011-12-07 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法
US7652299B2 (en) 2005-02-14 2010-01-26 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
KR100926094B1 (ko) 2005-03-09 2009-11-11 쇼와 덴코 가부시키가이샤 질화물 반도체 발광 소자 및 그 제조 방법
US8076165B2 (en) 2005-04-01 2011-12-13 Sharp Kabushiki Kaisha Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
JP4432827B2 (ja) 2005-04-26 2010-03-17 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
US7951617B2 (en) 2005-10-06 2011-05-31 Showa Denko K.K. Group III nitride semiconductor stacked structure and production method thereof
JP2007220745A (ja) * 2006-02-14 2007-08-30 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体の製造方法
JPWO2007129773A1 (ja) 2006-05-10 2009-09-17 昭和電工株式会社 Ｉｉｉ族窒化物化合物半導体積層構造体
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP2009123718A (ja) 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
JP4993627B2 (ja) * 2009-03-24 2012-08-08 古河機械金属株式会社 Ｉｉｉ族窒化物半導体層の製造方法
CN103460359A (zh) * 2011-04-05 2013-12-18 住友电气工业株式会社 制造氮化物电子设备的方法
JP5948698B2 (ja) * 2012-04-13 2016-07-06 パナソニックＩｐマネジメント株式会社 紫外発光素子およびその製造方法
JP6442957B2 (ja) * 2014-09-29 2018-12-26 日亜化学工業株式会社 窒化物半導体テンプレートの製造方法
CN107039250B (zh) * 2016-02-03 2018-08-21 中晟光电设备（上海）股份有限公司 一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途
JP7429522B2 (ja) * 2019-11-22 2024-02-08 住友化学株式会社 Ｉｉｉ族窒化物積層基板および半導体素子
JP7535399B2 (ja) * 2020-07-08 2024-08-16 住友化学株式会社 Ｉｉｉ族窒化物積層物、半導体素子およびｉｉｉ族窒化物積層物の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264886A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 半導体レーザ素子およびその製造方法
CN1174401A (zh) * 1997-07-24 1998-02-25 北京大学 GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
CN1201081A (zh) * 1997-04-09 1998-12-09 松下电子工业株式会社 氮化镓晶体的制备方法
JP2000281499A (ja) * 1999-03-30 2000-10-10 Furukawa Electric Co Ltd:The ＧａＮ単結晶の作製方法
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备
US20010023942A1 (en) * 2000-03-23 2001-09-27 Samsung Electronics Co., Ltd. Semiconductor device of heterojunction structure having quantum dot buffer layer
JP2001345478A (ja) * 2000-06-01 2001-12-14 Shiro Sakai 窒化ガリウム系化合物半導体の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08264886A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 半導体レーザ素子およびその製造方法
CN1201081A (zh) * 1997-04-09 1998-12-09 松下电子工业株式会社 氮化镓晶体的制备方法
CN1174401A (zh) * 1997-07-24 1998-02-25 北京大学 GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
JP2000281499A (ja) * 1999-03-30 2000-10-10 Furukawa Electric Co Ltd:The ＧａＮ単結晶の作製方法
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备
US20010023942A1 (en) * 2000-03-23 2001-09-27 Samsung Electronics Co., Ltd. Semiconductor device of heterojunction structure having quantum dot buffer layer
JP2001345478A (ja) * 2000-06-01 2001-12-14 Shiro Sakai 窒化ガリウム系化合物半導体の製造方法

Also Published As

Publication number Publication date
JP3656606B2 (ja) 2005-06-08
KR20040079443A (ko) 2004-09-14
TW200307313A (en) 2003-12-01
TWI221638B (en) 2004-10-01
KR20060079259A (ko) 2006-07-05
CN1639393A (zh) 2005-07-13
KR100659520B1 (ko) 2006-12-20
KR100692267B1 (ko) 2007-03-12
JP2003243302A (ja) 2003-08-29

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