CN101060102A - 氮化物半导体衬底、其制法及氮化物半导体发光器件用外延衬底 - Google Patents
氮化物半导体衬底、其制法及氮化物半导体发光器件用外延衬底 Download PDFInfo
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- CN101060102A CN101060102A CNA2007101359238A CN200710135923A CN101060102A CN 101060102 A CN101060102 A CN 101060102A CN A2007101359238 A CNA2007101359238 A CN A2007101359238A CN 200710135923 A CN200710135923 A CN 200710135923A CN 101060102 A CN101060102 A CN 101060102A
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- nitride
- nitride semiconductor
- crystal
- semiconductor substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 231
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims description 69
- 229910052594 sapphire Inorganic materials 0.000 claims description 37
- 239000010980 sapphire Substances 0.000 claims description 37
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 230000007547 defect Effects 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 150000004678 hydrides Chemical class 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims 3
- 238000002360 preparation method Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 55
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 54
- 239000007789 gas Substances 0.000 description 47
- 239000010936 titanium Substances 0.000 description 25
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 21
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 17
- 239000012535 impurity Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000008676 import Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000004520 agglutination Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000002791 soaking Methods 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 206010011376 Crepitations Diseases 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002912 waste gas Substances 0.000 description 2
- -1 InGaN (InGaN) Chemical compound 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2006117856 | 2006-04-21 | ||
JP2006-117856 | 2006-04-21 | ||
JP2006117856A JP5307975B2 (ja) | 2006-04-21 | 2006-04-21 | 窒化物系半導体自立基板及び窒化物系半導体発光デバイス用エピタキシャル基板 |
Publications (2)
Publication Number | Publication Date |
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CN101060102A true CN101060102A (zh) | 2007-10-24 |
CN101060102B CN101060102B (zh) | 2010-12-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007101359238A Expired - Fee Related CN101060102B (zh) | 2006-04-21 | 2007-03-12 | 氮化物半导体衬底、其制法及氮化物半导体发光器件用外延衬底 |
Country Status (3)
Country | Link |
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US (1) | US7728323B2 (zh) |
JP (1) | JP5307975B2 (zh) |
CN (1) | CN101060102B (zh) |
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CN102154627A (zh) * | 2011-01-21 | 2011-08-17 | 新疆大学 | 一种制备独立自支撑透明氮化铝纳米晶薄膜的方法 |
CN102640307A (zh) * | 2009-08-26 | 2012-08-15 | 首尔Opto仪器股份有限公司 | 制造半导体基底的方法和制造发光装置的方法 |
CN103320763A (zh) * | 2012-03-21 | 2013-09-25 | 日立电线株式会社 | 金属氯化物气体产生装置、氢化物气相沉积装置以及氮化物半导体模板的制造方法 |
CN103996757A (zh) * | 2014-05-30 | 2014-08-20 | 西安神光皓瑞光电科技有限公司 | 一种利用TiO2纳米管阵列薄膜提高LED亮度的方法 |
CN105304471A (zh) * | 2015-10-19 | 2016-02-03 | 中国电子科技集团公司第四十六研究所 | 一种使用碳球在氮化镓内部制作孔隙层的方法 |
CN106409664A (zh) * | 2011-08-17 | 2017-02-15 | 住友化学株式会社 | 氮化物半导体模板 |
WO2019047121A1 (zh) * | 2017-09-07 | 2019-03-14 | 苏州晶湛半导体有限公司 | 衬底及其制备方法 |
CN113118634A (zh) * | 2021-04-21 | 2021-07-16 | 吉林大学 | 纳秒激光辐照在钛合金表面制备纳米孔结构的方法 |
CN113140447A (zh) * | 2021-04-21 | 2021-07-20 | 西安电子科技大学 | 基于TiN掩膜的GaN材料及其制备方法 |
CN114094439A (zh) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | 基于氮化硅光子晶体的氮化镓面发射激光器及制备方法 |
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JP4900254B2 (ja) * | 2008-01-11 | 2012-03-21 | 住友電気工業株式会社 | エピタキシャルウエハを作製する方法 |
JP4998407B2 (ja) * | 2008-08-12 | 2012-08-15 | 日立電線株式会社 | Iii−v族窒化物系半導体基板の製造方法 |
JP5045955B2 (ja) * | 2009-04-13 | 2012-10-10 | 日立電線株式会社 | Iii族窒化物半導体自立基板 |
KR20120079393A (ko) * | 2011-01-04 | 2012-07-12 | (주)세미머티리얼즈 | 반도체 발광소자의 제조방법 |
KR20120079392A (ko) * | 2011-01-04 | 2012-07-12 | (주)세미머티리얼즈 | 반도체 발광소자의 제조방법 |
CN102418146A (zh) * | 2011-10-27 | 2012-04-18 | 华灿光电股份有限公司 | 一种提高GaN基LED发光效率的外延方法 |
JP6266145B2 (ja) * | 2012-03-21 | 2018-01-24 | 住友化学株式会社 | 窒化物半導体自立基板の製造方法 |
JP2013227201A (ja) * | 2012-03-29 | 2013-11-07 | Mitsubishi Chemicals Corp | 周期表第13族金属窒化物半導体結晶の製造方法および周期表第13族金属窒化物半導体結晶の製造装置 |
JP2013126939A (ja) * | 2012-12-14 | 2013-06-27 | Hitachi Cable Ltd | Iii族窒化物半導体基板 |
US9583466B2 (en) * | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
JP6512369B1 (ja) * | 2017-09-21 | 2019-05-15 | 住友電気工業株式会社 | 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶 |
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US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
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Also Published As
Publication number | Publication date |
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CN101060102B (zh) | 2010-12-29 |
US20070246733A1 (en) | 2007-10-25 |
US7728323B2 (en) | 2010-06-01 |
JP5307975B2 (ja) | 2013-10-02 |
JP2007294518A (ja) | 2007-11-08 |
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