|
US2266416A
(en)
|
1939-01-14 |
1941-12-16 |
Western Electric Co |
Control apparatus
|
|
US3263502A
(en)
|
1964-01-21 |
1966-08-02 |
Redwood L Springfield |
Multiple thermocouple support
|
|
JPS5132766B2
(en)
|
1972-07-25 |
1976-09-14 |
|
|
|
SU494614A1
(en)
|
1974-05-05 |
1975-12-05 |
Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср |
Remote level measurement device
|
|
US4749416A
(en)
|
1986-08-01 |
1988-06-07 |
System Planning Corporation |
Immersion pyrometer with protective structure for sidewall use
|
|
US4721533A
(en)
|
1986-08-01 |
1988-01-26 |
System Planning Corporation |
Protective structure for an immersion pyrometer
|
|
SU1408319A1
(en)
|
1987-01-06 |
1988-07-07 |
Всесоюзный научно-исследовательский институт аналитического приборостроения |
Chemoluminescent gas analyzer for nitrogen oxides
|
|
US5069591A
(en)
|
1988-03-24 |
1991-12-03 |
Tel Sagami Limited |
Semiconductor wafer-processing apparatus
|
|
US5158128A
(en)
|
1988-09-01 |
1992-10-27 |
Sumitec, Inc. |
Thermocouple for a continuous casting machine
|
|
DE3836696C1
(en)
|
1988-10-28 |
1989-12-07 |
Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De |
Lock for transporting material between clean rooms
|
|
US5084126A
(en)
|
1988-12-29 |
1992-01-28 |
Texas Instruments Incorporated |
Method and apparatus for uniform flow distribution in plasma reactors
|
|
US5053247A
(en)
|
1989-02-28 |
1991-10-01 |
Moore Epitaxial, Inc. |
Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
|
|
US5002632A
(en)
|
1989-11-22 |
1991-03-26 |
Texas Instruments Incorporated |
Method and apparatus for etching semiconductor materials
|
|
JPH0429313A
(en)
|
1990-05-24 |
1992-01-31 |
Fujitsu Ltd |
Device for producing semiconductor crystal
|
|
US5225366A
(en)
|
1990-06-22 |
1993-07-06 |
The United States Of America As Represented By The Secretary Of The Navy |
Apparatus for and a method of growing thin films of elemental semiconductors
|
|
US5082517A
(en)
|
1990-08-23 |
1992-01-21 |
Texas Instruments Incorporated |
Plasma density controller for semiconductor device processing equipment
|
|
US5273609A
(en)
|
1990-09-12 |
1993-12-28 |
Texas Instruments Incorporated |
Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
|
|
JP2714247B2
(en)
|
1990-10-29 |
1998-02-16 |
キヤノン株式会社 |
Method and apparatus for continuously forming large-area functional deposited film by microwave plasma CVD
|
|
US6095083A
(en)
|
1991-06-27 |
2000-08-01 |
Applied Materiels, Inc. |
Vacuum processing chamber having multi-mode access
|
|
US6379466B1
(en)
|
1992-01-17 |
2002-04-30 |
Applied Materials, Inc. |
Temperature controlled gas distribution plate
|
|
US5480818A
(en)
|
1992-02-10 |
1996-01-02 |
Fujitsu Limited |
Method for forming a film and method for manufacturing a thin film transistor
|
|
JPH05267186A
(en)
|
1992-03-18 |
1993-10-15 |
Fujitsu Ltd |
Vapor growth device and vapor growth method using its device
|
|
JP3191392B2
(en)
|
1992-04-07 |
2001-07-23 |
神鋼電機株式会社 |
Sealed container for clean room
|
|
EP0582019B1
(en)
|
1992-08-04 |
1995-10-18 |
International Business Machines Corporation |
Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transportable containers
|
|
USD363464S
(en)
|
1992-08-27 |
1995-10-24 |
Tokyo Electron Yamanashi Limited |
Electrode for a semiconductor processing apparatus
|
|
US5338362A
(en)
|
1992-08-29 |
1994-08-16 |
Tokyo Electron Limited |
Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
|
|
KR100251873B1
(en)
|
1993-01-21 |
2000-04-15 |
마쓰바 구니유키 |
Vertical type heat treating apparatus
|
|
JPH06319177A
(en)
|
1993-02-24 |
1994-11-15 |
Hewlett Packard Co <Hp> |
Adaptive remote control system
|
|
JP3348936B2
(en)
|
1993-10-21 |
2002-11-20 |
東京エレクトロン株式会社 |
Vertical heat treatment equipment
|
|
US5305417A
(en)
|
1993-03-26 |
1994-04-19 |
Texas Instruments Incorporated |
Apparatus and method for determining wafer temperature using pyrometry
|
|
EP0621051B1
(en)
|
1993-04-17 |
2001-08-22 |
MESSER GRIESHEIM AUSTRIA Ges.m.b.H. |
Apparatus for the controlled dosage of NO to a patient's air supply
|
|
US5484484A
(en)
|
1993-07-03 |
1996-01-16 |
Tokyo Electron Kabushiki |
Thermal processing method and apparatus therefor
|
|
US5348774A
(en)
|
1993-08-11 |
1994-09-20 |
Alliedsignal Inc. |
Method of rapidly densifying a porous structure
|
|
US5463176A
(en)
|
1994-01-03 |
1995-10-31 |
Eckert; C. Edward |
Liquid waste oxygenation
|
|
JPH07225214A
(en)
|
1994-02-14 |
1995-08-22 |
Shimadzu Corp |
Nox measuring apparatus
|
|
US5431734A
(en)
|
1994-04-28 |
1995-07-11 |
International Business Machines Corporation |
Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
|
|
JP3181171B2
(en)
|
1994-05-20 |
2001-07-03 |
シャープ株式会社 |
Vapor phase growth apparatus and vapor phase growth method
|
|
US5423942A
(en)
|
1994-06-20 |
1995-06-13 |
Texas Instruments Incorporated |
Method and apparatus for reducing etching erosion in a plasma containment tube
|
|
US5576629A
(en)
|
1994-10-24 |
1996-11-19 |
Fourth State Technology, Inc. |
Plasma monitoring and control method and system
|
|
US5586585A
(en)
|
1995-02-27 |
1996-12-24 |
Asyst Technologies, Inc. |
Direct loadlock interface
|
|
US5685912A
(en)
|
1995-06-20 |
1997-11-11 |
Sony Corporation |
Pressure control system for semiconductor manufacturing equipment
|
|
JPH0964149A
(en)
|
1995-08-29 |
1997-03-07 |
Hitachi Electron Eng Co Ltd |
Semiconductor production device
|
|
TW371796B
(en)
|
1995-09-08 |
1999-10-11 |
Semiconductor Energy Lab Co Ltd |
Method and apparatus for manufacturing a semiconductor device
|
|
DE19535178C2
(en)
|
1995-09-22 |
2001-07-19 |
Jenoptik Jena Gmbh |
Device for locking and unlocking a door of a container
|
|
DE29517100U1
(en)
|
1995-10-17 |
1997-02-13 |
Zimmer, Johannes, Klagenfurt |
Flow dividing and reshaping bodies
|
|
USD411516S
(en)
|
1996-03-15 |
1999-06-29 |
Tokyo Electron Limited |
Gas diffusion plate for electrode of semiconductor wafer processing apparatus
|
|
KR100272752B1
(en)
|
1996-03-22 |
2001-05-02 |
쓰치야 히로오 |
Vapor phase growth apparatus and vapor phase growth method
|
|
US5667592A
(en)
|
1996-04-16 |
1997-09-16 |
Gasonics International |
Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
|
|
KR100212132B1
(en)
|
1996-04-24 |
1999-08-02 |
윤종용 |
Profile thermocouple of horizontal furnace
|
|
USD386076S
(en)
|
1996-05-14 |
1997-11-11 |
Camco Manufacturing, Inc. |
Awning clamp
|
|
US5801945A
(en)
|
1996-06-28 |
1998-09-01 |
Lam Research Corporation |
Scheduling method for robotic manufacturing processes
|
|
US5915562A
(en)
|
1996-07-12 |
1999-06-29 |
Fluoroware, Inc. |
Transport module with latching door
|
|
TW344847B
(en)
|
1996-08-29 |
1998-11-11 |
Tokyo Electron Co Ltd |
Substrate treatment system, substrate transfer system, and substrate transfer method
|
|
US6444037B1
(en)
|
1996-11-13 |
2002-09-03 |
Applied Materials, Inc. |
Chamber liner for high temperature processing chamber
|
|
US5893741A
(en)
|
1997-02-07 |
1999-04-13 |
National Science Council |
Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's
|
|
EP0963552B1
(en)
|
1997-02-28 |
2003-07-09 |
Extraction Systems, Inc. |
System for detecting amine and other basic molecular contamination in a gas
|
|
US5879459A
(en)
|
1997-08-29 |
1999-03-09 |
Genus, Inc. |
Vertically-stacked process reactor and cluster tool system for atomic layer deposition
|
|
US5866795A
(en)
|
1997-03-17 |
1999-02-02 |
Applied Materials, Inc. |
Liquid flow rate estimation and verification by direct liquid measurement
|
|
US6287988B1
(en)
|
1997-03-18 |
2001-09-11 |
Kabushiki Kaisha Toshiba |
Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
|
|
US6053983A
(en)
|
1997-05-08 |
2000-04-25 |
Tokyo Electron, Ltd. |
Wafer for carrying semiconductor wafers and method detecting wafers on carrier
|
|
US5904170A
(en)
|
1997-05-14 |
1999-05-18 |
Applied Materials, Inc. |
Pressure flow and concentration control of oxygen/ozone gas mixtures
|
|
US6390754B2
(en)
|
1997-05-21 |
2002-05-21 |
Tokyo Electron Limited |
Wafer processing apparatus, method of operating the same and wafer detecting system
|
|
US5827420A
(en)
|
1997-07-29 |
1998-10-27 |
World Precision Instruments, Inc. |
Method and apparatus for the generation of nitric oxide
|
|
US20030049372A1
(en)
|
1997-08-11 |
2003-03-13 |
Cook Robert C. |
High rate deposition at low pressures in a small batch reactor
|
|
USD404372S
(en)
*
|
1997-08-20 |
1999-01-19 |
Tokyo Electron Limited |
Ring for use in a semiconductor wafer heat processing apparatus
|
|
USD404370S
(en)
*
|
1997-08-20 |
1999-01-19 |
Tokyo Electron Limited |
Cap for use in a semiconductor wafer heat processing apparatus
|
|
KR100253664B1
(en)
|
1997-08-22 |
2000-04-15 |
이해광 |
Operating system of polyimide dryer
|
|
DE69813014T2
(en)
*
|
1997-11-03 |
2004-02-12 |
Asm America Inc., Phoenix |
IMPROVED SMALL WAFERHALL EQUIPMENT
|
|
JPH11140648A
(en)
|
1997-11-07 |
1999-05-25 |
Tokyo Electron Ltd |
Process chamber device and treating device
|
|
KR100252049B1
(en)
|
1997-11-18 |
2000-04-15 |
윤종용 |
The atomic layer deposition method for fabricating aluminum layer
|
|
US6079356A
(en)
|
1997-12-02 |
2000-06-27 |
Applied Materials, Inc. |
Reactor optimized for chemical vapor deposition of titanium
|
|
US6106625A
(en)
|
1997-12-02 |
2000-08-22 |
Applied Materials, Inc. |
Reactor useful for chemical vapor deposition of titanium nitride
|
|
US6072163A
(en)
|
1998-03-05 |
2000-06-06 |
Fsi International Inc. |
Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
|
|
JP3656701B2
(en)
|
1998-03-23 |
2005-06-08 |
東京エレクトロン株式会社 |
Processing equipment
|
|
KR100265287B1
(en)
|
1998-04-21 |
2000-10-02 |
윤종용 |
Multi-chamber system for etching equipment for manufacturing semiconductor device
|
|
US6079927A
(en)
|
1998-04-22 |
2000-06-27 |
Varian Semiconductor Equipment Associates, Inc. |
Automated wafer buffer for use with wafer processing equipment
|
|
US6120008A
(en)
|
1998-04-28 |
2000-09-19 |
Life International Products, Inc. |
Oxygenating apparatus, method for oxygenating a liquid therewith, and applications thereof
|
|
US6287435B1
(en)
|
1998-05-06 |
2001-09-11 |
Tokyo Electron Limited |
Method and apparatus for ionized physical vapor deposition
|
|
NL1009327C2
(en)
|
1998-06-05 |
1999-12-10 |
Asm Int |
Method and device for transferring wafers.
|
|
US6427622B2
(en)
|
1998-08-28 |
2002-08-06 |
Mv Systems, Inc. |
Hot wire chemical vapor deposition method and apparatus using graphite hot rods
|
|
US6323081B1
(en)
|
1998-09-03 |
2001-11-27 |
Micron Technology, Inc. |
Diffusion barrier layers and methods of forming same
|
|
US6203969B1
(en)
|
1998-09-14 |
2001-03-20 |
Tokyo Electron Limited |
Resist processing apparatus which measures temperature of heat-sensing substrate and measuring method therein
|
|
KR100646906B1
(en)
|
1998-09-22 |
2006-11-17 |
동경 엘렉트론 주식회사 |
Substrate processing apparatus and substrate processing method
|
|
US6800571B2
(en)
|
1998-09-29 |
2004-10-05 |
Applied Materials Inc. |
CVD plasma assisted low dielectric constant films
|
|
US6143082A
(en)
|
1998-10-08 |
2000-11-07 |
Novellus Systems, Inc. |
Isolation of incompatible processes in a multi-station processing chamber
|
|
US20030101938A1
(en)
|
1998-10-27 |
2003-06-05 |
Applied Materials, Inc. |
Apparatus for the deposition of high dielectric constant films
|
|
JP2987148B1
(en)
|
1999-01-26 |
1999-12-06 |
国際電気株式会社 |
Substrate processing equipment
|
|
US6190037B1
(en)
|
1999-02-19 |
2001-02-20 |
Applied Materials, Inc. |
Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
|
|
US7588720B2
(en)
|
1999-04-30 |
2009-09-15 |
Tso3, Inc. |
Method and apparatus for ozone sterilization
|
|
US6119710A
(en)
|
1999-05-26 |
2000-09-19 |
Cyber Instrument Technologies Llc |
Method for wide range gas flow system with real time flow measurement and correction
|
|
US6812157B1
(en)
|
1999-06-24 |
2004-11-02 |
Prasad Narhar Gadgil |
Apparatus for atomic layer chemical vapor deposition
|
|
JP3252835B2
(en)
|
1999-07-02 |
2002-02-04 |
松下電器産業株式会社 |
Semiconductor device and manufacturing method thereof
|
|
US6238734B1
(en)
|
1999-07-08 |
2001-05-29 |
Air Products And Chemicals, Inc. |
Liquid precursor mixtures for deposition of multicomponent metal containing materials
|
|
US7381944B2
(en)
|
2004-04-28 |
2008-06-03 |
Sionex Corporation |
Systems and methods for ion species analysis with enhanced condition control and data interpretation
|
|
US6867859B1
(en)
|
1999-08-03 |
2005-03-15 |
Lightwind Corporation |
Inductively coupled plasma spectrometer for process diagnostics and control
|
|
EP1077479A1
(en)
|
1999-08-17 |
2001-02-21 |
Applied Materials, Inc. |
Post-deposition treatment to enchance properties of Si-O-C low K film
|
|
EP1077274A1
(en)
|
1999-08-17 |
2001-02-21 |
Applied Materials, Inc. |
Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
|
|
ATE418158T1
(en)
|
1999-08-17 |
2009-01-15 |
Applied Materials Inc |
SURFACE TREATMENT OF CARBON-DOPED SIO2 FILM TO INCREASE STABILITY DURING O2 ASHING
|
|
US6238636B1
(en)
|
1999-09-03 |
2001-05-29 |
Air Liquide America Corporation |
Process and systems for purification of boron trichloride
|
|
US7894474B1
(en)
|
1999-09-10 |
2011-02-22 |
Koninklijke Philips Electronics N.V. |
Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station
|
|
US6296710B1
(en)
|
1999-10-06 |
2001-10-02 |
Advanced Micro Devices, Inc. |
Multi-port gas injector for a vertical furnace used in semiconductor processing
|
|
US6503758B1
(en)
|
1999-10-12 |
2003-01-07 |
President & Fellows Of Harvard College |
Systems and methods for measuring nitrate levels
|
|
US6475276B1
(en)
|
1999-10-15 |
2002-11-05 |
Asm Microchemistry Oy |
Production of elemental thin films using a boron-containing reducing agent
|
|
JP3551867B2
(en)
*
|
1999-11-09 |
2004-08-11 |
信越化学工業株式会社 |
Silicon focus ring and manufacturing method thereof
|
|
US6589352B1
(en)
*
|
1999-12-10 |
2003-07-08 |
Applied Materials, Inc. |
Self aligning non contact shadow ring process kit
|
|
US6335049B1
(en)
|
2000-01-03 |
2002-01-01 |
Micron Technology, Inc. |
Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
|
|
JP2001203211A
(en)
|
2000-01-20 |
2001-07-27 |
Hitachi Kokusai Electric Inc |
Hydrogen annealing method and its device
|
|
KR100803770B1
(en)
|
2000-03-07 |
2008-02-15 |
에이에스엠 인터내셔널 엔.브이. |
Graded thin films
|
|
US6455098B2
(en)
|
2000-03-09 |
2002-09-24 |
Semix Incorporated |
Wafer processing apparatus and method
|
|
US6506009B1
(en)
|
2000-03-16 |
2003-01-14 |
Applied Materials, Inc. |
Apparatus for storing and moving a cassette
|
|
AT412302B
(en)
|
2000-03-28 |
2004-12-27 |
Hoerbiger Ventilwerke Gmbh |
AUTOMATIC VALVE
|
|
JP4281208B2
(en)
|
2000-04-04 |
2009-06-17 |
ソニー株式会社 |
Robot remote control system
|
|
US6641350B2
(en)
|
2000-04-17 |
2003-11-04 |
Hitachi Kokusai Electric Inc. |
Dual loading port semiconductor processing equipment
|
|
US6984591B1
(en)
|
2000-04-20 |
2006-01-10 |
International Business Machines Corporation |
Precursor source mixtures
|
|
US6502530B1
(en)
|
2000-04-26 |
2003-01-07 |
Unaxis Balzers Aktiengesellschaft |
Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
|
|
JP2001319921A
(en)
|
2000-05-09 |
2001-11-16 |
Canon Inc |
Processing chamber
|
|
US20020195056A1
(en)
|
2000-05-12 |
2002-12-26 |
Gurtej Sandhu |
Versatile atomic layer deposition apparatus
|
|
JP4449226B2
(en)
|
2000-05-22 |
2010-04-14 |
東京エレクトロン株式会社 |
Metal oxide film modification method, metal oxide film formation method, and heat treatment apparatus
|
|
US6558517B2
(en)
|
2000-05-26 |
2003-05-06 |
Micron Technology, Inc. |
Physical vapor deposition methods
|
|
US6346419B1
(en)
|
2000-06-26 |
2002-02-12 |
The United States Of America As Represented By The Department Of Commerce |
Photolysis system for fast-response NO2 measurements and method therefor
|
|
US6450117B1
(en)
|
2000-08-07 |
2002-09-17 |
Applied Materials, Inc. |
Directing a flow of gas in a substrate processing chamber
|
|
US6712929B1
(en)
|
2000-08-08 |
2004-03-30 |
Lam Research Corporation |
Deformation reduction at the main chamber
|
|
JP4150493B2
(en)
|
2000-08-22 |
2008-09-17 |
株式会社東芝 |
Temperature measuring method in pattern drawing apparatus
|
|
JP4365017B2
(en)
|
2000-08-23 |
2009-11-18 |
東京エレクトロン株式会社 |
Method for controlling temperature drop rate of heat treatment apparatus and heat treatment apparatus
|
|
JP3929261B2
(en)
|
2000-09-25 |
2007-06-13 |
株式会社日立国際電気 |
Substrate processing apparatus and substrate processing method
|
|
US6632068B2
(en)
|
2000-09-27 |
2003-10-14 |
Asm International N.V. |
Wafer handling system
|
|
US6498091B1
(en)
|
2000-11-01 |
2002-12-24 |
Applied Materials, Inc. |
Method of using a barrier sputter reactor to remove an underlying barrier layer
|
|
JP2002237375A
(en)
|
2000-12-05 |
2002-08-23 |
Ibiden Co Ltd |
Ceramic plate for semiconductor manufacturing/testing device, and manufacturing method of the same
|
|
KR100837707B1
(en)
|
2001-01-22 |
2008-06-13 |
도쿄엘렉트론가부시키가이샤 |
Method for producing material of electronic device, method for plaza processing and system for forming nitrous oxide film
|
|
WO2002059956A1
(en)
|
2001-01-25 |
2002-08-01 |
Tokyo Electron Limited |
Method of producing electronic device material
|
|
TW544775B
(en)
|
2001-02-28 |
2003-08-01 |
Japan Pionics |
Chemical vapor deposition apparatus and chemical vapor deposition method
|
|
US6878206B2
(en)
|
2001-07-16 |
2005-04-12 |
Applied Materials, Inc. |
Lid assembly for a processing system to facilitate sequential deposition techniques
|
|
US20020123237A1
(en)
|
2001-03-05 |
2002-09-05 |
Tue Nguyen |
Plasma pulse semiconductor processing system and method
|
|
US7563715B2
(en)
|
2005-12-05 |
2009-07-21 |
Asm International N.V. |
Method of producing thin films
|
|
JP3912993B2
(en)
|
2001-03-26 |
2007-05-09 |
株式会社荏原製作所 |
Neutral particle beam processing equipment
|
|
TW540093B
(en)
|
2001-04-05 |
2003-07-01 |
Angstron Systems Inc |
Atomic layer deposition system and method
|
|
JP2003053688A
(en)
|
2001-05-15 |
2003-02-26 |
Fanuc Robotics North America Inc |
Robot system having teach pendant
|
|
US7262125B2
(en)
|
2001-05-22 |
2007-08-28 |
Novellus Systems, Inc. |
Method of forming low-resistivity tungsten interconnects
|
|
US6810886B2
(en)
|
2001-05-24 |
2004-11-02 |
Applied Materials, Inc. |
Chamber cleaning via rapid thermal process during a cleaning period
|
|
US20030000647A1
(en)
|
2001-06-29 |
2003-01-02 |
Applied Materials, Inc. |
Substrate processing chamber
|
|
US20030017266A1
(en)
|
2001-07-13 |
2003-01-23 |
Cem Basceri |
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
|
|
US6838122B2
(en)
|
2001-07-13 |
2005-01-04 |
Micron Technology, Inc. |
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
|
|
JP3958539B2
(en)
|
2001-08-02 |
2007-08-15 |
東京エレクトロン株式会社 |
Substrate processing apparatus and substrate processing method
|
|
JP4921652B2
(en)
|
2001-08-03 |
2012-04-25 |
エイエスエム インターナショナル エヌ．ヴェー． |
Method for depositing yttrium oxide and lanthanum oxide thin films
|
|
USD699816S1
(en)
|
2001-08-17 |
2014-02-18 |
Neoperl Gmbh |
Stream straightener for faucet
|
|
KR20030018134A
(en)
|
2001-08-27 |
2003-03-06 |
한국전자통신연구원 |
Method of forming an insulation layer of a semiconductor device for controlling the composition and the doping concentration
|
|
JP3886424B2
(en)
|
2001-08-28 |
2007-02-28 |
鹿児島日本電気株式会社 |
Substrate processing apparatus and method
|
|
JP2003077782A
(en)
|
2001-08-31 |
2003-03-14 |
Toshiba Corp |
Manufacturing method for semiconductor device
|
|
JP2003158127A
(en)
|
2001-09-07 |
2003-05-30 |
Arieesu Gijutsu Kenkyu Kk |
Method and device for forming film and semiconductor device
|
|
US7049226B2
(en)
|
2001-09-26 |
2006-05-23 |
Applied Materials, Inc. |
Integration of ALD tantalum nitride for copper metallization
|
|
US6916398B2
(en)
|
2001-10-26 |
2005-07-12 |
Applied Materials, Inc. |
Gas delivery apparatus and method for atomic layer deposition
|
|
US7780789B2
(en)
|
2001-10-26 |
2010-08-24 |
Applied Materials, Inc. |
Vortex chamber lids for atomic layer deposition
|
|
US20080102208A1
(en)
|
2001-10-26 |
2008-05-01 |
Dien-Yeh Wu |
Vortex chamber lids for atomic layer deposition
|
|
AU2002349589A1
(en)
|
2001-11-30 |
2003-06-10 |
Matsushita Electric Industrial Co., Ltd. |
Semiconductor device and production method therefor
|
|
JP4116283B2
(en)
|
2001-11-30 |
2008-07-09 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
Hexakis (monohydrocarbylamino) disilane and process for producing the same
|
|
EP1453083A4
(en)
|
2001-12-07 |
2007-01-10 |
Tokyo Electron Ltd |
Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method
|
|
US20030111013A1
(en)
|
2001-12-19 |
2003-06-19 |
Oosterlaken Theodorus Gerardus Maria |
Method for the deposition of silicon germanium layers
|
|
US6841201B2
(en)
|
2001-12-21 |
2005-01-11 |
The Procter & Gamble Company |
Apparatus and method for treating a workpiece using plasma generated from microwave radiation
|
|
KR100442104B1
(en)
|
2001-12-27 |
2004-07-27 |
삼성전자주식회사 |
Method of fabricating semiconductor device having a capacitor
|
|
US6793733B2
(en)
|
2002-01-25 |
2004-09-21 |
Applied Materials Inc. |
Gas distribution showerhead
|
|
US7479304B2
(en)
|
2002-02-14 |
2009-01-20 |
Applied Materials, Inc. |
Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
|
|
NL1020054C2
(en)
|
2002-02-25 |
2003-09-05 |
Asm Int |
Device for treating wafers, provided with a measuring device box.
|
|
US20030173346A1
(en)
*
|
2002-03-18 |
2003-09-18 |
Renken Wayne Glenn |
System and method for heating and cooling wafer at accelerated rates
|
|
US6962644B2
(en)
|
2002-03-18 |
2005-11-08 |
Applied Materials, Inc. |
Tandem etch chamber plasma processing system
|
|
US6883733B1
(en)
|
2002-03-28 |
2005-04-26 |
Novellus Systems, Inc. |
Tapered post, showerhead design to improve mixing on dual plenum showerheads
|
|
JP4001498B2
(en)
|
2002-03-29 |
2007-10-31 |
東京エレクトロン株式会社 |
Insulating film forming method and insulating film forming system
|
|
US6875271B2
(en)
|
2002-04-09 |
2005-04-05 |
Applied Materials, Inc. |
Simultaneous cyclical deposition in different processing regions
|
|
KR20030081144A
(en)
|
2002-04-11 |
2003-10-17 |
가부시키가이샤 히다치 고쿠사이 덴키 |
Vertical semiconductor manufacturing apparatus
|
|
WO2003089682A1
(en)
|
2002-04-19 |
2003-10-30 |
Mattson Technology, Inc. |
System for depositing a film onto a substrate using a low vapor pressure gas precursor
|
|
US6825126B2
(en)
|
2002-04-25 |
2004-11-30 |
Hitachi Kokusai Electric Inc. |
Manufacturing method of semiconductor device and substrate processing apparatus
|
|
US20030213560A1
(en)
|
2002-05-16 |
2003-11-20 |
Yaxin Wang |
Tandem wafer processing system and process
|
|
JP4311914B2
(en)
|
2002-06-05 |
2009-08-12 |
住友電気工業株式会社 |
Heater module for semiconductor manufacturing equipment
|
|
US7067439B2
(en)
|
2002-06-14 |
2006-06-27 |
Applied Materials, Inc. |
ALD metal oxide deposition process using direct oxidation
|
|
US7255775B2
(en)
|
2002-06-28 |
2007-08-14 |
Toshiba Ceramics Co., Ltd. |
Semiconductor wafer treatment member
|
|
WO2004008052A2
(en)
|
2002-07-15 |
2004-01-22 |
Aviza Technology, Inc. |
System and method for cooling a thermal processing apparatus
|
|
US6955211B2
(en)
|
2002-07-17 |
2005-10-18 |
Applied Materials, Inc. |
Method and apparatus for gas temperature control in a semiconductor processing system
|
|
US6772072B2
(en)
|
2002-07-22 |
2004-08-03 |
Applied Materials, Inc. |
Method and apparatus for monitoring solid precursor delivery
|
|
US6884296B2
(en)
|
2002-08-23 |
2005-04-26 |
Micron Technology, Inc. |
Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
|
|
JP3594947B2
(en)
|
2002-09-19 |
2004-12-02 |
東京エレクトロン株式会社 |
Method for forming insulating film, method for manufacturing semiconductor device, substrate processing apparatus
|
|
US7252738B2
(en)
|
2002-09-20 |
2007-08-07 |
Lam Research Corporation |
Apparatus for reducing polymer deposition on a substrate and substrate support
|
|
JP3877157B2
(en)
|
2002-09-24 |
2007-02-07 |
東京エレクトロン株式会社 |
Substrate processing equipment
|
|
JP3887291B2
(en)
|
2002-09-24 |
2007-02-28 |
東京エレクトロン株式会社 |
Substrate processing equipment
|
|
US6696367B1
(en)
|
2002-09-27 |
2004-02-24 |
Asm America, Inc. |
System for the improved handling of wafers within a process tool
|
|
US20040065255A1
(en)
|
2002-10-02 |
2004-04-08 |
Applied Materials, Inc. |
Cyclical layer deposition system
|
|
JP4093462B2
(en)
|
2002-10-09 |
2008-06-04 |
東京エレクトロン株式会社 |
Substrate processing method and substrate processing apparatus
|
|
US6982230B2
(en)
|
2002-11-08 |
2006-01-03 |
International Business Machines Corporation |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
|
|
EP1420080A3
(en)
|
2002-11-14 |
2005-11-09 |
Applied Materials, Inc. |
Apparatus and method for hybrid chemical deposition processes
|
|
JP4009523B2
(en)
|
2002-11-14 |
2007-11-14 |
岩谷産業株式会社 |
Ozone gas concentration measuring method and ozone gas concentration measuring device
|
|
JP4988159B2
(en)
|
2002-11-15 |
2012-08-01 |
プレジデント アンド フェロウズ オブ ハーバード カレッジ |
Atomic layer deposition using metal amidinates.
|
|
KR100486690B1
(en)
|
2002-11-29 |
2005-05-03 |
삼성전자주식회사 |
Substrate processing apparatus and method for controlling contamination in substrate transfer module
|
|
USD494552S1
(en)
*
|
2002-12-12 |
2004-08-17 |
Tokyo Electron Limited |
Exhaust ring for manufacturing semiconductors
|
|
USD496008S1
(en)
*
|
2002-12-12 |
2004-09-14 |
Tokyo Electron Limited |
Exhaust ring for manufacturing semiconductors
|
|
USD558021S1
(en)
|
2003-01-30 |
2007-12-25 |
Roger Lawrence |
Metal fabrication clamp
|
|
US7713592B2
(en)
|
2003-02-04 |
2010-05-11 |
Tegal Corporation |
Nanolayer deposition process
|
|
US6972055B2
(en)
|
2003-03-28 |
2005-12-06 |
Finens Corporation |
Continuous flow deposition system
|
|
WO2004095560A1
(en)
|
2003-04-18 |
2004-11-04 |
Hitachi Kokusai Electric Inc. |
Semiconductor producing device and semiconductor producing method
|
|
JP3642572B2
(en)
|
2003-05-09 |
2005-04-27 |
東芝三菱電機産業システム株式会社 |
Ozone generator and ozone generation method
|
|
US7211508B2
(en)
|
2003-06-18 |
2007-05-01 |
Applied Materials, Inc. |
Atomic layer deposition of tantalum based barrier materials
|
|
EP1649076B1
(en)
|
2003-06-27 |
2010-05-19 |
Sundew Technologies, LLC |
Apparatus and method for chemical source vapor pressure control
|
|
US20100129548A1
(en)
|
2003-06-27 |
2010-05-27 |
Sundew Technologies, Llc |
Ald apparatus and method
|
|
WO2005012855A2
(en)
|
2003-07-25 |
2005-02-10 |
Lightwind Corporation |
Method and apparatus for chemical monitoring
|
|
EP1668298A4
(en)
|
2003-09-17 |
2010-04-14 |
Sionex Corp |
Solid-state flow generator and related systems, applications, and methods
|
|
US7056806B2
(en)
|
2003-09-17 |
2006-06-06 |
Micron Technology, Inc. |
Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
|
|
US7408225B2
(en)
|
2003-10-09 |
2008-08-05 |
Asm Japan K.K. |
Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
|
|
US20050095859A1
(en)
|
2003-11-03 |
2005-05-05 |
Applied Materials, Inc. |
Precursor delivery system with rate control
|
|
KR100802990B1
(en)
|
2003-11-20 |
2008-02-14 |
가부시키가이샤 히다치 고쿠사이 덴키 |
Method for Manufacturing Semiconductor Device and Substrate Processing Apparatus
|
|
KR20050053417A
(en)
|
2003-12-02 |
2005-06-08 |
한국전자통신연구원 |
Radical assisted oxidation apparatus
|
|
US20050148162A1
(en)
|
2004-01-02 |
2005-07-07 |
Huajie Chen |
Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
|
|
KR100620673B1
(en)
|
2004-01-05 |
2006-09-13 |
주식회사 하이닉스반도체 |
Cleaning Solution for Photoresist and Method for Pattern Formation Using the Same
|
|
US20050229849A1
(en)
|
2004-02-13 |
2005-10-20 |
Applied Materials, Inc. |
High productivity plasma processing chamber
|
|
TWI263709B
(en)
|
2004-02-17 |
2006-10-11 |
Ind Tech Res Inst |
Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
|
|
JP4698251B2
(en)
|
2004-02-24 |
2011-06-08 |
アプライド マテリアルズ インコーポレイテッド |
Movable or flexible shower head mounting
|
|
JP4354987B2
(en)
|
2004-02-27 |
2009-10-28 |
株式会社日立国際電気 |
Substrate processing equipment
|
|
JP4246654B2
(en)
|
2004-03-08 |
2009-04-02 |
株式会社日立ハイテクノロジーズ |
Vacuum processing equipment
|
|
US20070066038A1
(en)
|
2004-04-30 |
2007-03-22 |
Lam Research Corporation |
Fast gas switching plasma processing apparatus
|
|
ES2363089T3
(en)
|
2004-04-30 |
2011-07-20 |
Dichroic Cell S.R.L. |
METHOD TO PRODUCE VIRTUAL GE SUBSTRATES FOR INTEGRATION III / V ON YES (001).
|
|
US7708859B2
(en)
|
2004-04-30 |
2010-05-04 |
Lam Research Corporation |
Gas distribution system having fast gas switching capabilities
|
|
US20050252447A1
(en)
|
2004-05-11 |
2005-11-17 |
Applied Materials, Inc. |
Gas blocker plate for improved deposition
|
|
US20050252449A1
(en)
|
2004-05-12 |
2005-11-17 |
Nguyen Son T |
Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
|
|
US7748138B2
(en)
|
2004-05-13 |
2010-07-06 |
Tokyo Electron Limited |
Particle removal method for a substrate transfer mechanism and apparatus
|
|
KR100469132B1
(en)
|
2004-05-18 |
2005-01-29 |
주식회사 아이피에스 |
Cyclically pulsed two level plasma atomic layer deposition apparatus and method thereof
|
|
DE602005023792D1
(en)
|
2004-06-10 |
2010-11-04 |
Humanscale Corp |
Mechanism for adjusting the position of a fastened device
|
|
JP4417197B2
(en)
|
2004-07-30 |
2010-02-17 |
住友大阪セメント株式会社 |
Susceptor device
|
|
US7504344B2
(en)
|
2004-08-09 |
2009-03-17 |
Asm Japan K.K. |
Method of forming a carbon polymer film using plasma CVD
|
|
US7582891B2
(en)
|
2004-09-16 |
2009-09-01 |
Arizona Board Of Regents, A Corporate Body Organized Under Arizona Law, Acting On Behalf Of Arizona State University |
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
|
|
JP2006097044A
(en)
|
2004-09-28 |
2006-04-13 |
L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude |
Precursor for film deposition, method for depositing ruthenium-containing film, method for depositing ruthenium film, method for depositing ruthenium oxide film and method for depositing ruthenate film
|
|
JP4572100B2
(en)
|
2004-09-28 |
2010-10-27 |
日本エー・エス・エム株式会社 |
Plasma processing equipment
|
|
US7361958B2
(en)
|
2004-09-30 |
2008-04-22 |
Intel Corporation |
Nonplanar transistors with metal gate electrodes
|
|
US20060257563A1
(en)
|
2004-10-13 |
2006-11-16 |
Seok-Joo Doh |
Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
|
|
US20060108221A1
(en)
|
2004-11-24 |
2006-05-25 |
William Goodwin |
Method and apparatus for improving measuring accuracy in gas monitoring systems
|
|
US7722737B2
(en)
|
2004-11-29 |
2010-05-25 |
Applied Materials, Inc. |
Gas distribution system for improved transient phase deposition
|
|
KR100558922B1
(en)
|
2004-12-16 |
2006-03-10 |
(주)퓨전에이드 |
Apparatus and method for thin film deposition
|
|
KR20060076714A
(en)
|
2004-12-28 |
2006-07-04 |
에이에스엠지니텍코리아 주식회사 |
Atomic layer deposition apparatus
|
|
US20090104594A1
(en)
|
2004-12-29 |
2009-04-23 |
Biogen Idec |
Bioreactor Process Control System and Method
|
|
US20060156980A1
(en)
|
2005-01-19 |
2006-07-20 |
Samsung Electronics Co., Ltd. |
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
|
|
JP2006203120A
(en)
|
2005-01-24 |
2006-08-03 |
Toshiba Corp |
Method for manufacturing semiconductor apparatus
|
|
US20060240187A1
(en)
|
2005-01-27 |
2006-10-26 |
Applied Materials, Inc. |
Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
|
|
US7438949B2
(en)
|
2005-01-27 |
2008-10-21 |
Applied Materials, Inc. |
Ruthenium containing layer deposition method
|
|
WO2006080535A1
(en)
|
2005-01-31 |
2006-08-03 |
Ube Industries, Ltd. |
Nitride red phosphor and process for producing the same
|
|
WO2006087893A1
(en)
|
2005-02-17 |
2006-08-24 |
Hitachi Kokusai Electric Inc. |
Substrate processing method and substrate processing apparatus
|
|
JP4546519B2
(en)
|
2005-02-17 |
2010-09-15 |
株式会社日立国際電気 |
Manufacturing method of semiconductor device
|
|
KR100669828B1
(en)
|
2005-03-22 |
2007-01-16 |
성균관대학교산학협력단 |
Neutral beam deposition apparatus and Atomic layer deposition method using the same
|
|
US7422636B2
(en)
|
2005-03-25 |
2008-09-09 |
Tokyo Electron Limited |
Plasma enhanced atomic layer deposition system having reduced contamination
|
|
US20060228898A1
(en)
|
2005-03-30 |
2006-10-12 |
Cory Wajda |
Method and system for forming a high-k dielectric layer
|
|
USD559994S1
(en)
*
|
2005-03-30 |
2008-01-15 |
Tokyo Electron Limited |
Cover ring
|
|
USD559993S1
(en)
*
|
2005-03-30 |
2008-01-15 |
Tokyo Electron Limited |
Cover ring
|
|
CN101208444A
(en)
|
2005-04-21 |
2008-06-25 |
霍尼韦尔国际公司 |
Ruthenium-based material and ruthenium alloy
|
|
US7544398B1
(en)
|
2005-04-26 |
2009-06-09 |
The Regents Of The Univesity Of California |
Controlled nano-doping of ultra thin films
|
|
US7109098B1
(en)
|
2005-05-17 |
2006-09-19 |
Applied Materials, Inc. |
Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
|
|
US7608490B2
(en)
|
2005-06-02 |
2009-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
EP1899781B1
(en)
|
2005-07-07 |
2014-09-03 |
MKS Instruments, Inc. |
Ozone system for multi-chamber tools
|
|
TWI261313B
(en)
|
2005-07-29 |
2006-09-01 |
Ind Tech Res Inst |
A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
|
|
USD571383S1
(en)
*
|
2005-07-29 |
2008-06-17 |
Tokyo Electron Limited |
Top panel for microwave introduction window of a plasma processing apparatus
|
|
USD571831S1
(en)
*
|
2005-07-29 |
2008-06-24 |
Tokyo Electron Limited |
Top panel for microwave introduction window of a plasma processing apparatus
|
|
TWD125339S1
(en)
*
|
2005-07-29 |
2008-10-11 |
東京威力科創股份有限公司 |
Top panel for microwave introduction window of plasma processing apparatus
|
|
USD557226S1
(en)
*
|
2005-08-25 |
2007-12-11 |
Hitachi High-Technologies Corporation |
Electrode cover for a plasma processing apparatus
|
|
USD556704S1
(en)
*
|
2005-08-25 |
2007-12-04 |
Hitachi High-Technologies Corporation |
Grounded electrode for a plasma processing apparatus
|
|
CN101578141A
(en)
|
2005-09-08 |
2009-11-11 |
应用材料股份有限公司 |
Patterned electroless metallization processes for large area electronics
|
|
JP5017950B2
(en)
|
2005-09-21 |
2012-09-05 |
株式会社Ｓｕｍｃｏ |
Temperature control method for epitaxial growth equipment
|
|
US20090137055A1
(en)
|
2005-09-30 |
2009-05-28 |
Bognar John A |
Measuring nitrogen oxides and other gases by ozone formation
|
|
KR101153118B1
(en)
|
2005-10-12 |
2012-06-07 |
파나소닉 주식회사 |
Plasma processing apparatus and plasma processing method
|
|
KR100725108B1
(en)
|
2005-10-18 |
2007-06-04 |
삼성전자주식회사 |
Apparatus for supplying gas and apparatus for manufacturing a substrate having the same
|
|
US7727828B2
(en)
|
2005-10-20 |
2010-06-01 |
Applied Materials, Inc. |
Method for fabricating a gate dielectric of a field effect transistor
|
|
US7399712B1
(en)
|
2005-10-31 |
2008-07-15 |
Novellus Systems, Inc. |
Method for etching organic hardmasks
|
|
JP5044931B2
(en)
|
2005-10-31 |
2012-10-10 |
東京エレクトロン株式会社 |
Gas supply apparatus and substrate processing apparatus
|
|
US20070095283A1
(en)
|
2005-10-31 |
2007-05-03 |
Galewski Carl J |
Pumping System for Atomic Layer Deposition
|
|
KR101019293B1
(en)
|
2005-11-04 |
2011-03-07 |
어플라이드 머티어리얼스, 인코포레이티드 |
Apparatus and process for plasma-enhanced atomic layer deposition
|
|
KR101044355B1
(en)
|
2005-12-06 |
2011-06-29 |
가부시키가이샤 알박 |
Gas head and thin-film production apparatus
|
|
JP4803578B2
(en)
|
2005-12-08 |
2011-10-26 |
東京エレクトロン株式会社 |
Deposition method
|
|
US7713584B2
(en)
|
2005-12-22 |
2010-05-11 |
Asm International N.V. |
Process for producing oxide films
|
|
US20070184179A1
(en)
|
2006-02-09 |
2007-08-09 |
Akshay Waghray |
Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc
|
|
KR101379015B1
(en)
|
2006-02-15 |
2014-03-28 |
한국에이에스엠지니텍 주식회사 |
METHOD OF DEPOSITING Ru FILM USING PEALD AND DENSE Ru FILM
|
|
US7456429B2
(en)
|
2006-03-29 |
2008-11-25 |
Eastman Kodak Company |
Apparatus for atomic layer deposition
|
|
US20070287301A1
(en)
|
2006-03-31 |
2007-12-13 |
Huiwen Xu |
Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
|
|
JP4943047B2
(en)
|
2006-04-07 |
2012-05-30 |
東京エレクトロン株式会社 |
Processing apparatus and processing method
|
|
US20070252233A1
(en)
|
2006-04-28 |
2007-11-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
|
US20070261868A1
(en)
|
2006-05-12 |
2007-11-15 |
Gross James R |
Magnetic torque-limiting device and method
|
|
WO2008016836A2
(en)
|
2006-07-29 |
2008-02-07 |
Lotus Applied Technology, Llc |
Radical-enhanced atomic layer deposition system and method
|
|
US7935942B2
(en)
|
2006-08-15 |
2011-05-03 |
Varian Semiconductor Equipment Associates, Inc. |
Technique for low-temperature ion implantation
|
|
US20080045030A1
(en)
|
2006-08-15 |
2008-02-21 |
Shigeru Tahara |
Substrate processing method, substrate processing system and storage medium
|
|
US20080063798A1
(en)
|
2006-08-30 |
2008-03-13 |
Kher Shreyas S |
Precursors and hardware for cvd and ald
|
|
JP2008072030A
(en)
|
2006-09-15 |
2008-03-27 |
Matsushita Electric Ind Co Ltd |
Plasma processing apparatus, method for detecting abnormality of plasma processing apparatus, and method for plasma processing
|
|
JP2008085129A
(en)
|
2006-09-28 |
2008-04-10 |
Taiheiyo Cement Corp |
Substrate mounting apparatus
|
|
JP2008089320A
(en)
|
2006-09-29 |
2008-04-17 |
Nicom Co Ltd |
Flow rate measuring apparatus
|
|
JP5073751B2
(en)
|
2006-10-10 |
2012-11-14 |
エーエスエム アメリカ インコーポレイテッド |
Precursor delivery system
|
|
US8795771B2
(en)
|
2006-10-27 |
2014-08-05 |
Sean T. Barry |
ALD of metal-containing films using cyclopentadienyl compounds
|
|
US20090223441A1
(en)
|
2006-11-22 |
2009-09-10 |
Chantal Arena |
High volume delivery system for gallium trichloride
|
|
US7758698B2
(en)
|
2006-11-28 |
2010-07-20 |
Applied Materials, Inc. |
Dual top gas feed through distributor for high density plasma chamber
|
|
USD583395S1
(en)
*
|
2006-12-15 |
2008-12-23 |
Tokyo Electron Limited |
Cover for a heater stage of a plasma processing apparatus
|
|
EP2122687A1
(en)
|
2006-12-15 |
2009-11-25 |
Nxp B.V. |
Transistor device and method of manufacturing such a transistor device
|
|
GB2445188B
(en)
|
2006-12-29 |
2009-07-01 |
Thermo Fisher Scientific Inc |
Apparatus and method for generating nitrogen oxides
|
|
JP2008172083A
(en)
|
2007-01-12 |
2008-07-24 |
Sharp Corp |
Vapor growth device and vapor growth method
|
|
US7860379B2
(en)
|
2007-01-15 |
2010-12-28 |
Applied Materials, Inc. |
Temperature measurement and control of wafer support in thermal processing chamber
|
|
JP4299863B2
(en)
|
2007-01-22 |
2009-07-22 |
エルピーダメモリ株式会社 |
Manufacturing method of semiconductor device
|
|
US7598170B2
(en)
|
2007-01-26 |
2009-10-06 |
Asm America, Inc. |
Plasma-enhanced ALD of tantalum nitride films
|
|
JP4896899B2
(en)
|
2007-01-31 |
2012-03-14 |
東京エレクトロン株式会社 |
Substrate processing apparatus and particle adhesion preventing method
|
|
US8043432B2
(en)
|
2007-02-12 |
2011-10-25 |
Tokyo Electron Limited |
Atomic layer deposition systems and methods
|
|
US7851360B2
(en)
|
2007-02-14 |
2010-12-14 |
Intel Corporation |
Organometallic precursors for seed/barrier processes and methods thereof
|
|
US20080223130A1
(en)
|
2007-03-13 |
2008-09-18 |
Provina Incorporated |
Method and device for measuring density of a liquid
|
|
US7588749B2
(en)
|
2007-03-29 |
2009-09-15 |
Minimus Spine, Inc. |
Apparatus, method and system for delivering oxygen-ozone
|
|
KR100894098B1
(en)
|
2007-05-03 |
2009-04-20 |
주식회사 하이닉스반도체 |
Nonvolatile memory device having fast erase speed and improoved retention charactericstics, and method of fabricating the same
|
|
TWI405295B
(en)
|
2007-08-13 |
2013-08-11 |
Advanced Display Proc Eng Co |
Substrate processing apparatus and method
|
|
JP2009060035A
(en)
|
2007-09-03 |
2009-03-19 |
Shinko Electric Ind Co Ltd |
Electrostatic chuck member, its manufacturing method, and electrostatic chuck apparatus
|
|
JP5347294B2
(en)
|
2007-09-12 |
2013-11-20 |
東京エレクトロン株式会社 |
Film forming apparatus, film forming method, and storage medium
|
|
US7824743B2
(en)
|
2007-09-28 |
2010-11-02 |
Applied Materials, Inc. |
Deposition processes for titanium nitride barrier and aluminum
|
|
US8070880B2
(en)
|
2007-10-22 |
2011-12-06 |
Hitachi Kokusai Electric, Inc. |
Substrate processing apparatus
|
|
US7772097B2
(en)
|
2007-11-05 |
2010-08-10 |
Asm America, Inc. |
Methods of selectively depositing silicon-containing films
|
|
US20090124131A1
(en)
|
2007-11-09 |
2009-05-14 |
Electronic Controls Design |
Thermocouple adapter
|
|
US20090159002A1
(en)
|
2007-12-19 |
2009-06-25 |
Kallol Bera |
Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
|
|
JP5291928B2
(en)
|
2007-12-26 |
2013-09-18 |
株式会社日立製作所 |
Oxide semiconductor device and manufacturing method thereof
|
|
KR101444873B1
(en)
|
2007-12-26 |
2014-09-26 |
주성엔지니어링(주) |
System for treatmenting substrate
|
|
US20090165721A1
(en)
*
|
2007-12-27 |
2009-07-02 |
Memc Electronic Materials, Inc. |
Susceptor with Support Bosses
|
|
US8129288B2
(en)
|
2008-05-02 |
2012-03-06 |
Intermolecular, Inc. |
Combinatorial plasma enhanced deposition techniques
|
|
US20090186571A1
(en)
|
2008-01-22 |
2009-07-23 |
Asm America, Inc. |
Air ventilation system
|
|
US9103019B2
(en)
|
2008-02-01 |
2015-08-11 |
American Air Liquide, Inc. |
Metal precursors containing beta-diketiminato ligands
|
|
KR100988390B1
(en)
|
2008-02-11 |
2010-10-18 |
성균관대학교산학협력단 |
Substrate processing apparatus and substrate processing method
|
|
GB0805328D0
(en)
|
2008-03-25 |
2008-04-30 |
Aviza Technologies Ltd |
Deposition of an amorphous layer
|
|
US8741062B2
(en)
|
2008-04-22 |
2014-06-03 |
Picosun Oy |
Apparatus and methods for deposition reactors
|
|
KR101596698B1
(en)
|
2008-04-25 |
2016-02-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
Semiconductor device and method for manufacturing the same
|
|
US20090280248A1
(en)
|
2008-05-06 |
2009-11-12 |
Asm America, Inc. |
Porous substrate holder with thinned portions
|
|
EP2128299B1
(en)
|
2008-05-29 |
2016-12-28 |
General Electric Technology GmbH |
Multilayer thermal barrier coating
|
|
US7622369B1
(en)
|
2008-05-30 |
2009-11-24 |
Asm Japan K.K. |
Device isolation technology on semiconductor substrate
|
|
US8206506B2
(en)
|
2008-07-07 |
2012-06-26 |
Lam Research Corporation |
Showerhead electrode
|
|
USD614593S1
(en)
*
|
2008-07-21 |
2010-04-27 |
Asm Genitech Korea Ltd |
Substrate support for a semiconductor deposition apparatus
|
|
TWD136587S1
(en)
*
|
2008-07-22 |
2010-08-21 |
東京威力科創股份有限公司 |
Wafer attracting plate
|
|
US20100034719A1
(en)
|
2008-08-06 |
2010-02-11 |
Christian Dussarrat |
Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition
|
|
TW201011861A
(en)
|
2008-09-04 |
2010-03-16 |
Nanya Technology Corp |
Method for fabricating integrated circuit
|
|
JP5107185B2
(en)
|
2008-09-04 |
2012-12-26 |
東京エレクトロン株式会社 |
Film forming apparatus, substrate processing apparatus, film forming method, and recording medium recording program for executing this film forming method
|
|
JP2010087467A
(en)
|
2008-09-04 |
2010-04-15 |
Tokyo Electron Ltd |
Film deposition apparatus, substrate processing apparatus, film deposition method, and recording medium with recorded program for implementing the film deposition method
|
|
DE112009002156T5
(en)
|
2008-09-08 |
2012-01-12 |
Shibaura Mechatronics Corp. |
Substrate holding member, substrate processing apparatus and substrate processing method
|
|
US20100075037A1
(en)
|
2008-09-22 |
2010-03-25 |
Marsh Eugene P |
Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
|
|
US20110174213A1
(en)
|
2008-10-03 |
2011-07-21 |
Veeco Compound Semiconductor, Inc. |
Vapor Phase Epitaxy System
|
|
JP5410074B2
(en)
|
2008-11-07 |
2014-02-05 |
東京エレクトロン株式会社 |
Ozone gas concentration measurement method, ozone gas concentration measurement system, and substrate processing apparatus
|
|
JP5225041B2
(en)
|
2008-11-21 |
2013-07-03 |
京セラ株式会社 |
Electrostatic chuck
|
|
JP5356005B2
(en)
|
2008-12-10 |
2013-12-04 |
株式会社東芝 |
Nonvolatile semiconductor memory device and manufacturing method thereof
|
|
US8557712B1
(en)
|
2008-12-15 |
2013-10-15 |
Novellus Systems, Inc. |
PECVD flowable dielectric gap fill
|
|
US20110264250A1
(en)
|
2008-12-15 |
2011-10-27 |
Tokyo Electron Limited |
Substrate processing system, substrate processing method and storage medium storing program
|
|
DE112009003819T5
(en)
|
2008-12-23 |
2012-06-06 |
Mks Instruments, Inc. |
Containment or containment system for reactive chemicals
|
|
KR101111063B1
(en)
|
2008-12-31 |
2012-02-16 |
엘아이지에이디피 주식회사 |
Apparatus for joining of substrate
|
|
US8663735B2
(en)
|
2009-02-13 |
2014-03-04 |
Advanced Technology Materials, Inc. |
In situ generation of RuO4 for ALD of Ru and Ru related materials
|
|
US8586484B2
(en)
|
2009-03-04 |
2013-11-19 |
Fuji Electric Co., Ltd. |
Film forming method and film forming apparatus
|
|
USD616394S1
(en)
*
|
2009-03-06 |
2010-05-25 |
Tokyo Electron Limited |
Support of wafer boat for manufacturing semiconductor wafers
|
|
US9004744B1
(en)
|
2009-03-30 |
2015-04-14 |
Techni-Blend, Inc. |
Fluid mixer using countercurrent injection
|
|
US8402918B2
(en)
|
2009-04-07 |
2013-03-26 |
Lam Research Corporation |
Showerhead electrode with centering feature
|
|
JP5223804B2
(en)
|
2009-07-22 |
2013-06-26 |
東京エレクトロン株式会社 |
Film forming method and film forming apparatus
|
|
KR101245769B1
(en)
|
2009-07-28 |
2013-03-20 |
엘아이지에이디피 주식회사 |
Chemical vapor deposition device, guide member for the chemical vapor deposition device and method for manufacturing thin film using the chemical vapor deposition device
|
|
US8258588B2
(en)
|
2009-08-07 |
2012-09-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Sealing layer of a field effect transistor
|
|
JP2011082493A
(en)
|
2009-09-14 |
2011-04-21 |
Hitachi Kokusai Electric Inc |
Method of manufacturing semiconductor device and substrate processing apparatus
|
|
SG169960A1
(en)
|
2009-09-18 |
2011-04-29 |
Lam Res Corp |
Clamped monolithic showerhead electrode
|
|
TW201131651A
(en)
|
2009-10-05 |
2011-09-16 |
Univ Tohoku |
Low dielectric constant insulating film
|
|
JP4948587B2
(en)
|
2009-11-13 |
2012-06-06 |
東京エレクトロン株式会社 |
Photoresist coating and developing device, substrate transport method, interface device
|
|
US8328494B2
(en)
|
2009-12-15 |
2012-12-11 |
Varian Semiconductor Equipment Associates, Inc. |
In vacuum optical wafer heater for cryogenic processing
|
|
JP2011144412A
(en)
|
2010-01-13 |
2011-07-28 |
Honda Motor Co Ltd |
Plasma film-forming apparatus
|
|
US8859047B2
(en)
|
2010-02-23 |
2014-10-14 |
L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
|
|
USD625977S1
(en)
|
2010-02-25 |
2010-10-26 |
Vertex Stone and Chinaware Ltd. |
Spacer tool
|
|
JP2011181681A
(en)
|
2010-03-01 |
2011-09-15 |
Mitsui Eng & Shipbuild Co Ltd |
Atomic layer deposition method and atomic layer deposition device
|
|
US8241991B2
(en)
|
2010-03-05 |
2012-08-14 |
Asm Japan K.K. |
Method for forming interconnect structure having airgap
|
|
KR101810532B1
(en)
|
2010-03-12 |
2017-12-19 |
어플라이드 머티어리얼스, 인코포레이티드 |
Atomic layer deposition chamber with multi inject
|
|
EP2730676A1
(en)
|
2010-04-01 |
2014-05-14 |
L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Method for deposition of silicon nitride layers
|
|
US9997357B2
(en)
|
2010-04-15 |
2018-06-12 |
Lam Research Corporation |
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
|
|
US8728956B2
(en)
|
2010-04-15 |
2014-05-20 |
Novellus Systems, Inc. |
Plasma activated conformal film deposition
|
|
EP2589071A4
(en)
|
2010-07-02 |
2014-04-09 |
Matheson Tri Gas Inc |
Thin films and methods of making them using cyclohexasilane
|
|
US9373677B2
(en)
|
2010-07-07 |
2016-06-21 |
Entegris, Inc. |
Doping of ZrO2 for DRAM applications
|
|
US8669185B2
(en)
|
2010-07-30 |
2014-03-11 |
Asm Japan K.K. |
Method of tailoring conformality of Si-containing film
|
|
KR101249999B1
(en)
|
2010-08-12 |
2013-04-03 |
주식회사 디엠에스 |
Apparatus for chemical vapor deposition
|
|
USD649986S1
(en)
*
|
2010-08-17 |
2011-12-06 |
Ebara Corporation |
Sealing ring
|
|
US8573152B2
(en)
|
2010-09-03 |
2013-11-05 |
Lam Research Corporation |
Showerhead electrode
|
|
US7994070B1
(en)
|
2010-09-30 |
2011-08-09 |
Tokyo Electron Limited |
Low-temperature dielectric film formation by chemical vapor deposition
|
|
TW201224190A
(en)
|
2010-10-06 |
2012-06-16 |
Applied Materials Inc |
Atomic layer deposition of photoresist materials and hard mask precursors
|
|
FR2965888B1
(en)
|
2010-10-08 |
2012-12-28 |
Alcatel Lucent |
GAS DRAIN PIPING AND ASSOCIATED DRAINAGE METHOD
|
|
JP5638405B2
(en)
|
2010-10-08 |
2014-12-10 |
パナソニック株式会社 |
Substrate plasma processing method
|
|
USD655260S1
(en)
|
2010-10-21 |
2012-03-06 |
Tokyo Electron Limited |
Gas-separating plate for reactor for manufacturing semiconductor
|
|
USD655261S1
(en)
|
2010-10-21 |
2012-03-06 |
Tokyo Electron Limited |
Gas-separating plate for reactor for manufacturing semiconductor
|
|
USD654882S1
(en)
|
2010-10-21 |
2012-02-28 |
Tokyo Electron Limited |
Gas-separating plate for reactor for manufacturing semiconductor
|
|
KR20120047325A
(en)
|
2010-11-01 |
2012-05-11 |
삼성전자주식회사 |
Three dimensional semiconductor device and method for manufacturing the same
|
|
KR20120055363A
(en)
|
2010-11-23 |
2012-05-31 |
삼성전자주식회사 |
Capacitor and semiconductor device including the same
|
|
WO2012073938A1
(en)
|
2010-11-29 |
2012-06-07 |
株式会社日立国際電気 |
Method for manufacturing semiconductor device, method for processing substrate, and apparatus for processing substrate
|
|
US8901016B2
(en)
|
2010-12-28 |
2014-12-02 |
Asm Japan K.K. |
Method of forming metal oxide hardmask
|
|
KR101306315B1
(en)
|
2011-01-11 |
2013-09-09 |
주식회사 디엠에스 |
Apparatus for chemical vapor deposition
|
|
JP5236755B2
(en)
|
2011-01-14 |
2013-07-17 |
東京エレクトロン株式会社 |
Film forming apparatus and film forming method
|
|
JP2012164736A
(en)
|
2011-02-04 |
2012-08-30 |
Hitachi Kokusai Electric Inc |
Substrate processing apparatus and semiconductor device manufacturing method
|
|
US8563443B2
(en)
|
2011-02-18 |
2013-10-22 |
Asm Japan K.K. |
Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
|
|
US9684234B2
(en)
|
2011-03-24 |
2017-06-20 |
Uchicago Argonne, Llc |
Sequential infiltration synthesis for enhancing multiple-patterning lithography
|
|
KR102111702B1
(en)
|
2011-04-07 |
2020-05-15 |
피코순 오와이 |
Atomic layer deposition with plasma source
|
|
US8647993B2
(en)
|
2011-04-11 |
2014-02-11 |
Novellus Systems, Inc. |
Methods for UV-assisted conformal film deposition
|
|
JP2012244180A
(en)
|
2011-05-24 |
2012-12-10 |
Macronix Internatl Co Ltd |
Multi-layer structure and manufacturing method for the same
|
|
JP5730670B2
(en)
|
2011-05-27 |
2015-06-10 |
株式会社Adeka |
Method for producing thin film containing molybdenum oxide, and raw material for forming thin film containing molybdenum oxide
|
|
US9136180B2
(en)
|
2011-06-01 |
2015-09-15 |
Asm Ip Holding B.V. |
Process for depositing electrode with high effective work function
|
|
US20120318773A1
(en)
|
2011-06-15 |
2012-12-20 |
Applied Materials, Inc. |
Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control
|
|
US8450212B2
(en)
|
2011-06-28 |
2013-05-28 |
International Business Machines Corporation |
Method of reducing critical dimension process bias differences between narrow and wide damascene wires
|
|
US8778448B2
(en)
|
2011-07-21 |
2014-07-15 |
International Business Machines Corporation |
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
|
|
KR20140063684A
(en)
|
2011-08-19 |
2014-05-27 |
도쿄엘렉트론가부시키가이샤 |
Method for forming ge-sb-te film, method for forming ge-te film, method for forming sb-te film, and program
|
|
JP1438745S
(en)
|
2011-09-20 |
2015-04-06 |
|
|
|
JP1438319S
(en)
|
2011-09-20 |
2015-04-06 |
|
|
|
US9048178B2
(en)
|
2011-09-27 |
2015-06-02 |
Tokyo Electron Limited |
Plasma etching method and semiconductor device manufacturing method
|
|
USD709536S1
(en)
*
|
2011-09-30 |
2014-07-22 |
Tokyo Electron Limited |
Focusing ring
|
|
USD709537S1
(en)
*
|
2011-09-30 |
2014-07-22 |
Tokyo Electron Limited |
Focusing ring
|
|
US8759234B2
(en)
|
2011-10-17 |
2014-06-24 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Deposited material and method of formation
|
|
TWI627303B
(en)
|
2011-11-04 |
2018-06-21 |
Ａｓｍ國際股份有限公司 |
Method for depositing doped silicon oxide on substrate in reaction chamber
|
|
US9112003B2
(en)
|
2011-12-09 |
2015-08-18 |
Asm International N.V. |
Selective formation of metallic films on metallic surfaces
|
|
US10838123B2
(en)
|
2012-01-19 |
2020-11-17 |
Supriya Jaiswal |
Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
|
|
US9238865B2
(en)
|
2012-02-06 |
2016-01-19 |
Asm Ip Holding B.V. |
Multiple vapor sources for vapor deposition
|
|
US9162209B2
(en)
|
2012-03-01 |
2015-10-20 |
Novellus Systems, Inc. |
Sequential cascading of reaction volumes as a chemical reuse strategy
|
|
US8785285B2
(en)
|
2012-03-08 |
2014-07-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor devices and methods of manufacture thereof
|
|
KR20140143151A
(en)
|
2012-03-15 |
2014-12-15 |
도쿄엘렉트론가부시키가이샤 |
Film forming process and film forming apparatus
|
|
GB201206096D0
(en)
|
2012-04-05 |
2012-05-16 |
Dyson Technology Ltd |
Atomic layer deposition
|
|
US20130280891A1
(en)
|
2012-04-20 |
2013-10-24 |
Yihwan Kim |
Method and apparatus for germanium tin alloy formation by thermal cvd
|
|
US20130302520A1
(en)
|
2012-05-11 |
2013-11-14 |
Kai-An Wang |
Co-evaporation system comprising vapor pre-mixer
|
|
US8853826B2
(en)
|
2012-05-14 |
2014-10-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods and apparatus for bipolar junction transistors and resistors
|
|
US20130312663A1
(en)
|
2012-05-22 |
2013-11-28 |
Applied Microstructures, Inc. |
Vapor Delivery Apparatus
|
|
US8900886B2
(en)
|
2012-06-01 |
2014-12-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
System and method of monitoring and controlling atomic layer deposition of tungsten
|
|
KR20150023016A
(en)
|
2012-06-15 |
2015-03-04 |
피코순 오와이 |
Coating a substrate web by atomic layer deposition
|
|
US9023737B2
(en)
|
2012-07-11 |
2015-05-05 |
Asm Ip Holding B.V. |
Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
|
|
EP2872668B1
(en)
|
2012-07-13 |
2018-09-19 |
Gallium Enterprises Pty Ltd |
Apparatus and method for film formation
|
|
US8784950B2
(en)
|
2012-07-16 |
2014-07-22 |
Asm Ip Holding B.V. |
Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
|
|
US20140034632A1
(en)
|
2012-08-01 |
2014-02-06 |
Heng Pan |
Apparatus and method for selective oxidation at lower temperature using remote plasma source
|
|
US8859368B2
(en)
|
2012-09-04 |
2014-10-14 |
Globalfoundries Inc. |
Semiconductor device incorporating a multi-function layer into gate stacks
|
|
WO2014070600A1
(en)
|
2012-10-29 |
2014-05-08 |
Matheson Tri-Gas, Inc. |
Methods for selective and conformal epitaxy of highly doped si-containing materials for three dimensional structures
|
|
EP2750167A1
(en)
|
2012-12-31 |
2014-07-02 |
Imec |
Method for tuning the effective work function of a gate structure in a semiconductor device
|
|
EP2946028B1
(en)
|
2013-01-16 |
2018-12-26 |
Universiteit Gent |
Methods for obtaining hydrophilic fluoropolymers
|
|
KR20140095738A
(en)
|
2013-01-25 |
2014-08-04 |
삼성전자주식회사 |
Transistors and methods of manufacturing the same
|
|
US9399228B2
(en)
|
2013-02-06 |
2016-07-26 |
Novellus Systems, Inc. |
Method and apparatus for purging and plasma suppression in a process chamber
|
|
US9758866B2
(en)
|
2013-02-13 |
2017-09-12 |
Wayne State University |
Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
|
|
US8932923B2
(en)
|
2013-02-19 |
2015-01-13 |
Globalfoundries Inc. |
Semiconductor gate structure for threshold voltage modulation and method of making same
|
|
FR3002241B1
(en)
*
|
2013-02-21 |
2015-11-20 |
Altatech Semiconductor |
CHEMICAL VAPOR DEPOSITION DEVICE
|
|
US9484191B2
(en)
|
2013-03-08 |
2016-11-01 |
Asm Ip Holding B.V. |
Pulsed remote plasma method and system
|
|
KR101317942B1
(en)
*
|
2013-03-13 |
2013-10-16 |
(주)테키스트 |
Edge ring cooling module for semi-conductor manufacture chuck
|
|
US9564309B2
(en)
|
2013-03-14 |
2017-02-07 |
Asm Ip Holding B.V. |
Si precursors for deposition of SiN at low temperatures
|
|
US9309978B2
(en)
|
2013-03-14 |
2016-04-12 |
Dresser-Rand Company |
Low head to stem ratio poppet valve
|
|
WO2014140672A1
(en)
|
2013-03-15 |
2014-09-18 |
L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude |
Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
|
|
TWI627305B
(en)
|
2013-03-15 |
2018-06-21 |
應用材料股份有限公司 |
Atmospheric lid with rigid plate for carousel processing chambers
|
|
JP2014216647A
(en)
|
2013-04-29 |
2014-11-17 |
エーエスエムアイピー ホールディング ビー．ブイ． |
Method for manufacturing resistive random access memory having metal-doped resistive switching layer
|
|
USD766849S1
(en)
*
|
2013-05-15 |
2016-09-20 |
Ebara Corporation |
Substrate retaining ring
|
|
US8900999B1
(en)
|
2013-08-16 |
2014-12-02 |
Applied Materials, Inc. |
Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
|
|
US9190263B2
(en)
|
2013-08-22 |
2015-11-17 |
Asm Ip Holding B.V. |
Method for forming SiOCH film using organoaminosilane annealing
|
|
USD716742S1
(en)
*
|
2013-09-13 |
2014-11-04 |
Asm Ip Holding B.V. |
Substrate supporter for semiconductor deposition apparatus
|
|
USD724553S1
(en)
*
|
2013-09-13 |
2015-03-17 |
Asm Ip Holding B.V. |
Substrate supporter for semiconductor deposition apparatus
|
|
US9240412B2
(en)
|
2013-09-27 |
2016-01-19 |
Asm Ip Holding B.V. |
Semiconductor structure and device and methods of forming same using selective epitaxial process
|
|
US9576790B2
(en)
|
2013-10-16 |
2017-02-21 |
Asm Ip Holding B.V. |
Deposition of boron and carbon containing materials
|
|
WO2015065823A1
(en)
|
2013-10-28 |
2015-05-07 |
Sigma-Aldrich Co. Llc |
Metal complexes containing amidoimine ligands
|
|
US10179947B2
(en)
|
2013-11-26 |
2019-01-15 |
Asm Ip Holding B.V. |
Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
|
|
TWI588286B
(en)
|
2013-11-26 |
2017-06-21 |
烏翠泰克股份有限公司 |
Method, cycle and device of improved plasma enhanced ald
|
|
WO2015095394A1
(en)
|
2013-12-17 |
2015-06-25 |
Texas Instruments Incorporated |
Elongated contacts using litho-freeze-litho-etch process
|
|
KR102102787B1
(en)
|
2013-12-17 |
2020-04-22 |
삼성전자주식회사 |
Substrate treating apparatus and blocker plate assembly
|
|
US20150179640A1
(en)
|
2013-12-19 |
2015-06-25 |
Globalfoundries Inc. |
Common fabrication of different semiconductor devices with different threshold voltages
|
|
US9159561B2
(en)
|
2013-12-26 |
2015-10-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
|
|
US9677172B2
(en)
|
2014-01-21 |
2017-06-13 |
Applied Materials, Inc. |
Methods for forming a cobalt-ruthenium liner layer for interconnect structures
|
|
TWI633200B
(en)
|
2014-01-23 |
2018-08-21 |
烏翠泰克股份有限公司 |
Vapor delivery system
|
|
USD733257S1
(en)
|
2014-02-14 |
2015-06-30 |
Hansgrohe Se |
Overhead shower
|
|
US9362180B2
(en)
|
2014-02-25 |
2016-06-07 |
Globalfoundries Inc. |
Integrated circuit having multiple threshold voltages
|
|
JP6303592B2
(en)
|
2014-02-25 |
2018-04-04 |
東京エレクトロン株式会社 |
Substrate processing equipment
|
|
US9576952B2
(en)
|
2014-02-25 |
2017-02-21 |
Globalfoundries Inc. |
Integrated circuits with varying gate structures and fabrication methods
|
|
US10109534B2
(en)
|
2014-03-14 |
2018-10-23 |
Applied Materials, Inc. |
Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
|
|
US10167557B2
(en)
|
2014-03-18 |
2019-01-01 |
Asm Ip Holding B.V. |
Gas distribution system, reactor including the system, and methods of using the same
|
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
|
US10047435B2
(en)
|
2014-04-16 |
2018-08-14 |
Asm Ip Holding B.V. |
Dual selective deposition
|
|
US9184054B1
(en)
|
2014-04-25 |
2015-11-10 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for integrated circuit patterning
|
|
US9343294B2
(en)
|
2014-04-28 |
2016-05-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Interconnect structure having air gap and method of forming the same
|
|
USD733262S1
(en)
|
2014-05-22 |
2015-06-30 |
Young Boung Kang |
Disposer of connection member for kitchen sink bowl
|
|
US10978315B2
(en)
|
2014-05-30 |
2021-04-13 |
Ebara Corporation |
Vacuum evacuation system
|
|
EP2953162A1
(en)
|
2014-06-06 |
2015-12-09 |
IMEC vzw |
Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
|
|
KR102195003B1
(en)
|
2014-06-18 |
2020-12-24 |
삼성전자주식회사 |
Semiconductor diodes, variable resistance memory devices and methods of manufacturing variable resistance memory devices
|
|
USD736348S1
(en)
|
2014-07-07 |
2015-08-11 |
Jiangmen Triumph Rain Showers Co., LTD |
Spray head for a shower
|
|
KR102262887B1
(en)
|
2014-07-21 |
2021-06-08 |
삼성전자주식회사 |
Semiconductor device and method for fabricating the same
|
|
US10176996B2
(en)
|
2014-08-06 |
2019-01-08 |
Globalfoundries Inc. |
Replacement metal gate and fabrication process with reduced lithography steps
|
|
USD751176S1
(en)
|
2014-08-07 |
2016-03-08 |
Hansgrohe Se |
Overhead shower
|
|
US9252238B1
(en)
|
2014-08-18 |
2016-02-02 |
Lam Research Corporation |
Semiconductor structures with coplanar recessed gate layers and fabrication methods
|
|
KR20160021958A
(en)
|
2014-08-18 |
2016-02-29 |
삼성전자주식회사 |
Plasma treating apparatus and substrate treating apparatus
|
|
US9890456B2
(en)
|
2014-08-21 |
2018-02-13 |
Asm Ip Holding B.V. |
Method and system for in situ formation of gas-phase compounds
|
|
US10224222B2
(en)
|
2014-09-09 |
2019-03-05 |
Asm Ip Holding B.V. |
Assembly of liner and flange for vertical furnace as well as a vertical process furnace
|
|
JP2016098406A
(en)
|
2014-11-21 |
2016-05-30 |
東京エレクトロン株式会社 |
Film deposition method of molybdenum film
|
|
US9564312B2
(en)
|
2014-11-24 |
2017-02-07 |
Lam Research Corporation |
Selective inhibition in atomic layer deposition of silicon-containing films
|
|
US9589790B2
(en)
|
2014-11-24 |
2017-03-07 |
Lam Research Corporation |
Method of depositing ammonia free and chlorine free conformal silicon nitride film
|
|
US9620377B2
(en)
|
2014-12-04 |
2017-04-11 |
Lab Research Corporation |
Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
|
|
US9997373B2
(en)
|
2014-12-04 |
2018-06-12 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
US9951421B2
(en)
|
2014-12-10 |
2018-04-24 |
Lam Research Corporation |
Inlet for effective mixing and purging
|
|
US10062564B2
(en)
|
2014-12-15 |
2018-08-28 |
Tokyo Electron Limited |
Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
|
|
US9820289B1
(en)
|
2014-12-18 |
2017-11-14 |
Sprint Spectrum L.P. |
Method and system for managing quantity of carriers in air interface connection based on type of content
|
|
KR102185458B1
(en)
|
2015-02-03 |
2020-12-03 |
에이에스엠 아이피 홀딩 비.브이. |
Selective deposition
|
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
|
JP2016178223A
(en)
|
2015-03-20 |
2016-10-06 |
ルネサスエレクトロニクス株式会社 |
Method of manufacturing semiconductor device
|
|
US9647071B2
(en)
|
2015-06-15 |
2017-05-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
FINFET structures and methods of forming the same
|
|
US10438795B2
(en)
*
|
2015-06-22 |
2019-10-08 |
Veeco Instruments, Inc. |
Self-centering wafer carrier system for chemical vapor deposition
|
|
US10174437B2
(en)
*
|
2015-07-09 |
2019-01-08 |
Applied Materials, Inc. |
Wafer electroplating chuck assembly
|
|
JP6502779B2
(en)
|
2015-07-29 |
2019-04-17 |
東京エレクトロン株式会社 |
Method of inspecting leak of valve of gas supply system
|
|
US20170051402A1
(en)
|
2015-08-17 |
2017-02-23 |
Asm Ip Holding B.V. |
Susceptor and substrate processing apparatus
|
|
JP1549882S
(en)
*
|
2015-08-18 |
2016-05-23 |
|
|
|
US20170051405A1
(en)
|
2015-08-18 |
2017-02-23 |
Asm Ip Holding B.V. |
Method for forming sin or sicn film in trenches by peald
|
|
US9523148B1
(en)
|
2015-08-25 |
2016-12-20 |
Asm Ip Holdings B.V. |
Process for deposition of titanium oxynitride for use in integrated circuit fabrication
|
|
US10121671B2
(en)
|
2015-08-28 |
2018-11-06 |
Applied Materials, Inc. |
Methods of depositing metal films using metal oxyhalide precursors
|
|
US9601693B1
(en)
|
2015-09-24 |
2017-03-21 |
Lam Research Corporation |
Method for encapsulating a chalcogenide material
|
|
US9960072B2
(en)
|
2015-09-29 |
2018-05-01 |
Asm Ip Holding B.V. |
Variable adjustment for precise matching of multiple chamber cavity housings
|
|
US9853101B2
(en)
|
2015-10-07 |
2017-12-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Strained nanowire CMOS device and method of forming
|
|
USD810705S1
(en)
*
|
2016-04-01 |
2018-02-20 |
Veeco Instruments Inc. |
Self-centering wafer carrier for chemical vapor deposition
|
|
USD819580S1
(en)
*
|
2016-04-01 |
2018-06-05 |
Veeco Instruments, Inc. |
Self-centering wafer carrier for chemical vapor deposition
|
|
US9941425B2
(en)
|
2015-10-16 |
2018-04-10 |
Asm Ip Holdings B.V. |
Photoactive devices and materials
|
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
|
US10322384B2
(en)
|
2015-11-09 |
2019-06-18 |
Asm Ip Holding B.V. |
Counter flow mixer for process chamber
|
|
US9786491B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
|
US9786492B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
|
WO2017091345A1
(en)
|
2015-11-25 |
2017-06-01 |
Applied Materials, Inc. |
New materials for tensile stress and low contact resistance and method of forming
|
|
US10865477B2
(en)
|
2016-02-08 |
2020-12-15 |
Illinois Tool Works Inc. |
Method and system for the localized deposit of metal on a surface
|
|
US9570302B1
(en)
|
2016-02-10 |
2017-02-14 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of patterning a material layer
|
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
|
CN109072424A
(en)
|
2016-02-19 |
2018-12-21 |
默克专利股份有限公司 |
Molybdenum film is deposited using molybdenum carbonyl presoma
|
|
US9748145B1
(en)
|
2016-02-29 |
2017-08-29 |
Globalfoundries Inc. |
Semiconductor devices with varying threshold voltage and fabrication methods thereof
|
|
US10018920B2
(en)
|
2016-03-04 |
2018-07-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Lithography patterning with a gas phase resist
|
|
US10343920B2
(en)
|
2016-03-18 |
2019-07-09 |
Asm Ip Holding B.V. |
Aligned carbon nanotubes
|
|
JP6576277B2
(en)
|
2016-03-23 |
2019-09-18 |
東京エレクトロン株式会社 |
Formation method of nitride film
|
|
US9892913B2
(en)
|
2016-03-24 |
2018-02-13 |
Asm Ip Holding B.V. |
Radial and thickness control via biased multi-port injection settings
|
|
KR102262750B1
(en)
|
2016-03-28 |
2021-06-10 |
주식회사 히타치하이테크 |
Plasma treatment method and plasma treatment device
|
|
JP6608753B2
(en)
|
2016-03-31 |
2019-11-20 |
株式会社ノリタケカンパニーリミテド |
PdRu alloy electrode material and manufacturing method thereof
|
|
US10190213B2
(en)
|
2016-04-21 |
2019-01-29 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
|
KR102592471B1
(en)
|
2016-05-17 |
2023-10-20 |
에이에스엠 아이피 홀딩 비.브이. |
Method of forming metal interconnection and method of fabricating semiconductor device using the same
|
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
|
US10014212B2
(en)
|
2016-06-08 |
2018-07-03 |
Asm Ip Holding B.V. |
Selective deposition of metallic films
|
|
US10217863B2
(en)
|
2016-06-28 |
2019-02-26 |
International Business Machines Corporation |
Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
|
|
US10062563B2
(en)
|
2016-07-01 |
2018-08-28 |
Lam Research Corporation |
Selective atomic layer deposition with post-dose treatment
|
|
WO2018013778A1
(en)
|
2016-07-14 |
2018-01-18 |
Entegris, Inc. |
Cvd mo deposition by using mooc14
|
|
US10177025B2
(en)
|
2016-07-28 |
2019-01-08 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US10573522B2
(en)
|
2016-08-16 |
2020-02-25 |
Lam Research Corporation |
Method for preventing line bending during metal fill process
|
|
US9865455B1
(en)
|
2016-09-07 |
2018-01-09 |
Lam Research Corporation |
Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
|
|
KR102600998B1
(en)
|
2016-09-28 |
2023-11-13 |
삼성전자주식회사 |
Semiconductor devices
|
|
US11926894B2
(en)
|
2016-09-30 |
2024-03-12 |
Asm Ip Holding B.V. |
Reactant vaporizer and related systems and methods
|
|
US10573549B2
(en)
|
2016-12-01 |
2020-02-25 |
Lam Research Corporation |
Pad raising mechanism in wafer positioning pedestal for semiconductor processing
|
|
US20170044664A1
(en)
|
2016-10-28 |
2017-02-16 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
|
|
US10229833B2
(en)
|
2016-11-01 |
2019-03-12 |
Asm Ip Holding B.V. |
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
|
US10134757B2
(en)
|
2016-11-07 |
2018-11-20 |
Asm Ip Holding B.V. |
Method of processing a substrate and a device manufactured by using the method
|
|
US9991277B1
(en)
|
2016-11-28 |
2018-06-05 |
Sandisk Technologies Llc |
Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
|
|
US10340135B2
(en)
|
2016-11-28 |
2019-07-02 |
Asm Ip Holding B.V. |
Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
|
|
US10186420B2
(en)
|
2016-11-29 |
2019-01-22 |
Asm Ip Holding B.V. |
Formation of silicon-containing thin films
|
|
US10604841B2
(en)
|
2016-12-14 |
2020-03-31 |
Lam Research Corporation |
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
|
|
US20180174801A1
(en)
|
2016-12-21 |
2018-06-21 |
Ulvac Technologies, Inc. |
Apparatuses and methods for surface treatment
|
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
|
US10049426B2
(en)
|
2017-01-03 |
2018-08-14 |
Qualcomm Incorporated |
Draw call visibility stream
|
|
JP1584241S
(en)
*
|
2017-01-31 |
2017-08-21 |
|
|
|
JP1584906S
(en)
*
|
2017-01-31 |
2017-08-28 |
|
|
|
JP2018148143A
(en)
|
2017-03-08 |
2018-09-20 |
株式会社東芝 |
Shower plate, processor, and discharge method
|
|
US11081337B2
(en)
|
2017-03-15 |
2021-08-03 |
Versum Materials U.S., LLC |
Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
|
|
US10629415B2
(en)
|
2017-03-28 |
2020-04-21 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method for processing substrate
|
|
US10283353B2
(en)
|
2017-03-29 |
2019-05-07 |
Asm Ip Holding B.V. |
Method of reforming insulating film deposited on substrate with recess pattern
|
|
US10460932B2
(en)
|
2017-03-31 |
2019-10-29 |
Asm Ip Holding B.V. |
Semiconductor device with amorphous silicon filled gaps and methods for forming
|
|
KR102466639B1
(en)
|
2017-04-10 |
2022-11-11 |
램 리써치 코포레이션 |
Low resistivity films containing molybdenum
|
|
US10242879B2
(en)
|
2017-04-20 |
2019-03-26 |
Lam Research Corporation |
Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
|
|
KR102457289B1
(en)
|
2017-04-25 |
2022-10-21 |
에이에스엠 아이피 홀딩 비.브이. |
Method for depositing a thin film and manufacturing a semiconductor device
|
|
US11501965B2
(en)
|
2017-05-05 |
2022-11-15 |
Asm Ip Holding B.V. |
Plasma enhanced deposition processes for controlled formation of metal oxide thin films
|
|
US10892156B2
(en)
|
2017-05-08 |
2021-01-12 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
|
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
|
US10446393B2
(en)
|
2017-05-08 |
2019-10-15 |
Asm Ip Holding B.V. |
Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
|
|
US20180325414A1
(en)
|
2017-05-12 |
2018-11-15 |
Tech4Imaging Llc |
Electro-magneto volume tomography system and methodology for non-invasive volume tomography
|
|
KR102417931B1
(en)
|
2017-05-30 |
2022-07-06 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate supporting device and substrate processing apparatus including the same
|
|
US10504742B2
(en)
|
2017-05-31 |
2019-12-10 |
Asm Ip Holding B.V. |
Method of atomic layer etching using hydrogen plasma
|
|
US10886123B2
(en)
|
2017-06-02 |
2021-01-05 |
Asm Ip Holding B.V. |
Methods for forming low temperature semiconductor layers and related semiconductor device structures
|
|
US10246777B2
(en)
|
2017-06-12 |
2019-04-02 |
Asm Ip Holding B.V. |
Heater block having continuous concavity
|
|
KR102474876B1
(en)
|
2017-06-15 |
2022-12-07 |
삼성전자주식회사 |
Tungsten precursor and Method of forming a tungsten-containing layer using the same
|
|
US12040200B2
(en)
|
2017-06-20 |
2024-07-16 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
|
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
|
US10685834B2
(en)
|
2017-07-05 |
2020-06-16 |
Asm Ip Holdings B.V. |
Methods for forming a silicon germanium tin layer and related semiconductor device structures
|
|
TWI794238B
(en)
|
2017-07-13 |
2023-03-01 |
荷蘭商Ａｓｍ智慧財產控股公司 |
Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber
|
|
KR20190009245A
(en)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
Methods for forming a semiconductor device structure and related semiconductor device structures
|
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
|
US10312055B2
(en)
|
2017-07-26 |
2019-06-04 |
Asm Ip Holding B.V. |
Method of depositing film by PEALD using negative bias
|
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
|
US10605530B2
(en)
|
2017-07-26 |
2020-03-31 |
Asm Ip Holding B.V. |
Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
|
|
KR102481410B1
(en)
|
2017-07-31 |
2022-12-26 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing apparatus
|
|
TWI815813B
(en)
|
2017-08-04 |
2023-09-21 |
荷蘭商Ａｓｍ智慧財產控股公司 |
Showerhead assembly for distributing a gas within a reaction chamber
|
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
|
US10249524B2
(en)
|
2017-08-09 |
2019-04-02 |
Asm Ip Holding B.V. |
Cassette holder assembly for a substrate cassette and holding member for use in such assembly
|
|
US10763108B2
(en)
|
2017-08-18 |
2020-09-01 |
Lam Research Corporation |
Geometrically selective deposition of a dielectric film
|
|
US10236177B1
(en)
|
2017-08-22 |
2019-03-19 |
ASM IP Holding B.V.. |
Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
|
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
|
US20190067014A1
(en)
|
2017-08-30 |
2019-02-28 |
Asm Ip Holding B.V. |
Methods for filling a gap feature on a substrate surface and related semiconductor device structures
|
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
|
US20190067003A1
(en)
|
2017-08-30 |
2019-02-28 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
|
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
|
KR102491945B1
(en)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing apparatus
|
|
US20190067095A1
(en)
|
2017-08-30 |
2019-02-28 |
Asm Ip Holding B.V. |
Layer forming method
|
|
US10106892B1
(en)
|
2017-08-31 |
2018-10-23 |
Globalfoundries Inc. |
Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
|
|
KR102401446B1
(en)
|
2017-08-31 |
2022-05-24 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing apparatus
|
|
US10269559B2
(en)
|
2017-09-13 |
2019-04-23 |
Lam Research Corporation |
Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
|
|
US10607895B2
(en)
|
2017-09-18 |
2020-03-31 |
Asm Ip Holdings B.V. |
Method for forming a semiconductor device structure comprising a gate fill metal
|
|
KR102630301B1
(en)
|
2017-09-21 |
2024-01-29 |
에이에스엠 아이피 홀딩 비.브이. |
Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
|
|
US10844484B2
(en)
|
2017-09-22 |
2020-11-24 |
Asm Ip Holding B.V. |
Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
|
US10319588B2
(en)
|
2017-10-10 |
2019-06-11 |
Asm Ip Holding B.V. |
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
|
|
US10923344B2
(en)
|
2017-10-30 |
2021-02-16 |
Asm Ip Holding B.V. |
Methods for forming a semiconductor structure and related semiconductor structures
|
|
KR102443047B1
(en)
|
2017-11-16 |
2022-09-14 |
에이에스엠 아이피 홀딩 비.브이. |
Method of processing a substrate and a device manufactured by the same
|
|
US10910262B2
(en)
|
2017-11-16 |
2021-02-02 |
Asm Ip Holding B.V. |
Method of selectively depositing a capping layer structure on a semiconductor device structure
|
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
|
US10290508B1
(en)
|
2017-12-05 |
2019-05-14 |
Asm Ip Holding B.V. |
Method for forming vertical spacers for spacer-defined patterning
|
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|