TW593548B - Siloxane resins - Google Patents

Siloxane resins Download PDF

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Publication number
TW593548B
TW593548B TW91116734A TW91116734A TW593548B TW 593548 B TW593548 B TW 593548B TW 91116734 A TW91116734 A TW 91116734A TW 91116734 A TW91116734 A TW 91116734A TW 593548 B TW593548 B TW 593548B
Authority
TW
Taiwan
Prior art keywords
resin
group
siloxane
coating
units
Prior art date
Application number
TW91116734A
Other languages
English (en)
Chinese (zh)
Inventor
Ronald Paul Boisvert
Duane Ray Bujalski
Kai Su
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of TW593548B publication Critical patent/TW593548B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y10T428/24999—Inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
TW91116734A 2001-07-26 2002-07-26 Siloxane resins TW593548B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/915,902 US6872456B2 (en) 2001-07-26 2001-07-26 Siloxane resins

Publications (1)

Publication Number Publication Date
TW593548B true TW593548B (en) 2004-06-21

Family

ID=25436405

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91116734A TW593548B (en) 2001-07-26 2002-07-26 Siloxane resins

Country Status (9)

Country Link
US (1) US6872456B2 (enExample)
EP (1) EP1412434B1 (enExample)
JP (1) JP4411067B2 (enExample)
KR (1) KR20040023683A (enExample)
CN (1) CN1535300A (enExample)
AT (1) ATE399822T1 (enExample)
DE (1) DE60227373D1 (enExample)
TW (1) TW593548B (enExample)
WO (1) WO2003010246A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
US6940173B2 (en) * 2003-01-29 2005-09-06 International Business Machines Corporation Interconnect structures incorporating low-k dielectric barrier films
TW200628981A (en) 2004-09-29 2006-08-16 Sumitomo Bakelite Co Semiconductor device
TW200619843A (en) * 2004-10-20 2006-06-16 Sumitomo Bakelite Co Semiconductor wafer and semiconductor device
CN101048704B (zh) * 2004-11-02 2011-04-13 陶氏康宁公司 抗蚀剂组合物
JP5107354B2 (ja) * 2006-08-04 2012-12-26 ダウ・コーニング・コーポレイション シリコーン樹脂およびシリコーン組成物
TWI434891B (zh) * 2007-02-22 2014-04-21 Silecs Oy 積體電路用高矽含量矽氧烷聚合物
CN101622296B (zh) * 2007-02-27 2013-10-16 Az电子材料美国公司 硅基抗反射涂料组合物
DE102008000353A1 (de) * 2008-02-20 2009-08-27 Wacker Chemie Ag Härtbare Polymerabmischungen
US20100291475A1 (en) * 2009-05-12 2010-11-18 Chenghong Li Silicone Coating Compositions
US20110111239A1 (en) * 2009-11-10 2011-05-12 Hemant Dandekar Sol-gel coating for steel and cast iron substrates and methods of making and using same
WO2012151747A1 (en) * 2011-05-11 2012-11-15 Henkel (China) Company Limited Silicone resin with improved barrier properties
CN109054560A (zh) * 2018-08-07 2018-12-21 常州工程职业技术学院 一种电工钢用绝缘涂料

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US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US3730743A (en) * 1970-08-24 1973-05-01 Stauffer Chemical Co Zinc dust coating composition
US3965136A (en) * 1975-09-24 1976-06-22 Olin Corporation Alkoxysilane cluster compounds and their preparation
US4329485A (en) * 1981-06-29 1982-05-11 Olin Corporation Process for preparing alkoxysilane cluster compounds by reacting a trialkoxysilanol with a triamidosilane
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP3134297B2 (ja) * 1990-08-29 2001-02-13 日立化成工業株式会社 シリカ系被膜形成用塗布液およびシリカ系被膜の製造法
JP2669988B2 (ja) * 1992-02-06 1997-10-29 沖電気工業株式会社 ポリ（アルコキシシロキサン）の製造方法
JP2726363B2 (ja) 1992-06-03 1998-03-11 沖電気工業株式会社 シリコーン樹脂及びこれを用いた組成物
JPH06326202A (ja) * 1993-03-16 1994-11-25 Showa Denko Kk 半導体及びその絶縁膜または平坦化膜の形成方法
TW257785B (enExample) 1993-05-17 1995-09-21 Dow Corning
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US6048804A (en) 1997-04-29 2000-04-11 Alliedsignal Inc. Process for producing nanoporous silica thin films
JPH1121510A (ja) * 1997-06-30 1999-01-26 Dow Corning Asia Ltd 撥水性被膜形成用シリコーンレジン及びその組成物
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Also Published As

Publication number Publication date
WO2003010246A1 (en) 2003-02-06
JP4411067B2 (ja) 2010-02-10
CN1535300A (zh) 2004-10-06
KR20040023683A (ko) 2004-03-18
ATE399822T1 (de) 2008-07-15
JP2004536924A (ja) 2004-12-09
EP1412434B1 (en) 2008-07-02
DE60227373D1 (de) 2008-08-14
US6872456B2 (en) 2005-03-29
EP1412434A1 (en) 2004-04-28
US20030087082A1 (en) 2003-05-08

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