TW589499B - Liquid crystal display device and a manufacturing method of the same - Google Patents
Liquid crystal display device and a manufacturing method of the same Download PDFInfo
- Publication number
- TW589499B TW589499B TW090113393A TW90113393A TW589499B TW 589499 B TW589499 B TW 589499B TW 090113393 A TW090113393 A TW 090113393A TW 90113393 A TW90113393 A TW 90113393A TW 589499 B TW589499 B TW 589499B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- layer
- thin film
- film transistor
- pixel
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000003990 capacitor Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 34
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 86
- 239000011229 interlayer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 1
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 1
- 229910004444 SUB1 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000166201A JP4278834B2 (ja) | 2000-06-02 | 2000-06-02 | 液晶表示装置とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW589499B true TW589499B (en) | 2004-06-01 |
Family
ID=18669557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090113393A TW589499B (en) | 2000-06-02 | 2001-06-01 | Liquid crystal display device and a manufacturing method of the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6657688B2 (enExample) |
| JP (1) | JP4278834B2 (enExample) |
| KR (1) | KR100547603B1 (enExample) |
| TW (1) | TW589499B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752390A (zh) * | 2008-12-05 | 2010-06-23 | 株式会社半导体能源研究所 | 半导体装置 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4603190B2 (ja) * | 2001-04-16 | 2010-12-22 | 株式会社日立製作所 | 液晶表示装置 |
| KR100776756B1 (ko) * | 2001-08-01 | 2007-11-19 | 삼성전자주식회사 | 반사-투과형 액정표시장치 및 이의 제조 방법 |
| TWI296062B (en) * | 2001-12-28 | 2008-04-21 | Sanyo Electric Co | Liquid crystal display device |
| JP3953320B2 (ja) * | 2001-12-28 | 2007-08-08 | 三洋電機株式会社 | 表示装置及びその製造方法 |
| JP3995476B2 (ja) * | 2001-12-28 | 2007-10-24 | 三洋電機株式会社 | 表示装置及びその製造方法 |
| JP4237442B2 (ja) | 2002-03-01 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半透過型液晶表示装置 |
| JP4087620B2 (ja) * | 2002-03-01 | 2008-05-21 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4101533B2 (ja) * | 2002-03-01 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 半透過型の液晶表示装置の作製方法 |
| TWI230304B (en) * | 2002-03-04 | 2005-04-01 | Sanyo Electric Co | Display device with reflecting layer |
| JP3788387B2 (ja) | 2002-05-10 | 2006-06-21 | セイコーエプソン株式会社 | 電気光学装置および電気光学装置の製造方法 |
| US20040141129A1 (en) * | 2003-01-17 | 2004-07-22 | Shih-Chang Chang | Method and structure of low reflection liquid crystal display unit |
| TWI315010B (en) * | 2003-03-31 | 2009-09-21 | Sharp Corporatio | Liquid crystal display device and method of manufacturing the same |
| JP2004302174A (ja) * | 2003-03-31 | 2004-10-28 | Fujitsu Display Technologies Corp | 液晶表示装置及びその製造方法 |
| KR100760939B1 (ko) | 2003-05-23 | 2007-09-21 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치 및 그의 제조방법 |
| KR100558985B1 (ko) * | 2003-06-27 | 2006-03-10 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판의 제조 방법 |
| US8937580B2 (en) * | 2003-08-08 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of light emitting device and light emitting device |
| KR100984355B1 (ko) | 2003-11-06 | 2010-09-30 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| JP4550551B2 (ja) | 2004-10-29 | 2010-09-22 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| CN100478766C (zh) * | 2005-08-16 | 2009-04-15 | 友达光电股份有限公司 | 像素结构 |
| KR101151799B1 (ko) * | 2005-11-09 | 2012-06-01 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
| KR20070049740A (ko) * | 2005-11-09 | 2007-05-14 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
| TWI284223B (en) | 2006-01-18 | 2007-07-21 | Au Optronics Corp | Liquid crystal display panel and liquid crystal display device incorporating the same |
| JP4927430B2 (ja) * | 2006-04-12 | 2012-05-09 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| JP4187757B2 (ja) * | 2006-06-22 | 2008-11-26 | 日東電工株式会社 | 配線回路基板 |
| DE102006060734B4 (de) * | 2006-06-30 | 2014-03-06 | Lg Display Co., Ltd. | Flüssigkristalldisplay und Verfahren zu dessen Herstellung |
| CN102253546A (zh) * | 2007-11-13 | 2011-11-23 | 友达光电股份有限公司 | 像素结构 |
| US7796201B2 (en) * | 2008-03-17 | 2010-09-14 | Himax Display, Inc. | Pixel device having a capacitor comprising metal layers and a capacitor having poly-silicon layers |
| TWI387822B (zh) | 2008-07-01 | 2013-03-01 | Chunghwa Picture Tubes Ltd | 薄膜電晶體陣列基板及其製造方法 |
| KR101113394B1 (ko) * | 2009-12-17 | 2012-02-29 | 삼성모바일디스플레이주식회사 | 액정표시장치의 어레이 기판 |
| TWI392946B (zh) * | 2009-12-18 | 2013-04-11 | Au Optronics Corp | 畫素結構 |
| US8947337B2 (en) | 2010-02-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN102822734B (zh) * | 2010-04-16 | 2015-01-21 | 夏普株式会社 | 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置 |
| JP2012119532A (ja) * | 2010-12-01 | 2012-06-21 | Seiko Epson Corp | 薄膜トランジスタ形成用基板、半導体装置、電気装置 |
| JP6230253B2 (ja) * | 2013-04-03 | 2017-11-15 | 三菱電機株式会社 | Ｔｆｔアレイ基板およびその製造方法 |
| CN112255833B (zh) * | 2020-10-22 | 2023-08-08 | 福州京东方光电科技有限公司 | 显示面板及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0764110A (ja) * | 1993-08-30 | 1995-03-10 | Kyocera Corp | アクティブマトリックス基板 |
| JPH07311389A (ja) * | 1994-05-18 | 1995-11-28 | Casio Comput Co Ltd | アクティブマトリックス液晶表示装置 |
| MY114271A (en) | 1994-05-12 | 2002-09-30 | Casio Computer Co Ltd | Reflection type color liquid crystal display device |
| US5652667A (en) * | 1995-02-03 | 1997-07-29 | Victor Company Of Japan, Ltd. | Liquid crystal display apparatus |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| KR100386203B1 (ko) * | 1996-02-29 | 2003-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전기광학장치및그제조방법 |
| JPH1031233A (ja) * | 1996-07-15 | 1998-02-03 | Sony Corp | 反射型ゲストホスト液晶表示装置の製造方法 |
| JPH1031231A (ja) * | 1996-07-15 | 1998-02-03 | Sony Corp | 反射型ゲストホスト液晶表示装置及びその製造方法 |
| JP4024901B2 (ja) * | 1997-05-22 | 2007-12-19 | エルジー フィリップス エルシーディー カンパニー リミテッド | アクティブマトリックス型液晶表示装置 |
| JP2955277B2 (ja) | 1997-07-28 | 1999-10-04 | シャープ株式会社 | 液晶表示装置 |
| US6195140B1 (en) * | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
| JP3380482B2 (ja) | 1997-12-26 | 2003-02-24 | シャープ株式会社 | 液晶表示装置 |
-
2000
- 2000-06-02 JP JP2000166201A patent/JP4278834B2/ja not_active Expired - Fee Related
-
2001
- 2001-05-31 KR KR1020010030485A patent/KR100547603B1/ko not_active Expired - Fee Related
- 2001-06-01 US US09/870,750 patent/US6657688B2/en not_active Expired - Lifetime
- 2001-06-01 TW TW090113393A patent/TW589499B/zh not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752390A (zh) * | 2008-12-05 | 2010-06-23 | 株式会社半导体能源研究所 | 半导体装置 |
| CN101752390B (zh) * | 2008-12-05 | 2014-09-24 | 株式会社半导体能源研究所 | 半导体装置 |
| US8999750B2 (en) | 2008-12-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI509799B (zh) * | 2008-12-05 | 2015-11-21 | Semiconductor Energy Lab | 半導體裝置 |
| US9201280B2 (en) | 2008-12-05 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US6657688B2 (en) | 2003-12-02 |
| KR100547603B1 (ko) | 2006-02-01 |
| JP2001343670A (ja) | 2001-12-14 |
| JP4278834B2 (ja) | 2009-06-17 |
| KR20010110165A (ko) | 2001-12-12 |
| US20020018152A1 (en) | 2002-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |