TW570991B - Method of sputtering a carbon protective film on a magnetic disk with high sp3 content - Google Patents
Method of sputtering a carbon protective film on a magnetic disk with high sp3 content Download PDFInfo
- Publication number
- TW570991B TW570991B TW089107572A TW89107572A TW570991B TW 570991 B TW570991 B TW 570991B TW 089107572 A TW089107572 A TW 089107572A TW 89107572 A TW89107572 A TW 89107572A TW 570991 B TW570991 B TW 570991B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- patent application
- sputtering
- item
- carbon
- Prior art date
Links
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 159
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 152
- 238000000034 method Methods 0.000 title claims abstract description 129
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 97
- 230000001681 protective effect Effects 0.000 title description 4
- 239000010408 film Substances 0.000 claims abstract description 144
- 239000010409 thin film Substances 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 6
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 4
- 239000005977 Ethylene Substances 0.000 claims description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 239000001273 butane Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 4
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 claims 5
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 claims 3
- 239000011241 protective layer Substances 0.000 claims 3
- 229910052722 tritium Inorganic materials 0.000 claims 3
- 101100008047 Caenorhabditis elegans cut-3 gene Proteins 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- XKLJHFLUAHKGGU-UHFFFAOYSA-N nitrous amide Chemical compound ON=N XKLJHFLUAHKGGU-UHFFFAOYSA-N 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 27
- 238000007737 ion beam deposition Methods 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 16
- 230000007797 corrosion Effects 0.000 abstract description 16
- 239000002245 particle Substances 0.000 abstract description 7
- 150000001721 carbon Chemical class 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 4
- 238000000541 cathodic arc deposition Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 description 16
- 229910003481 amorphous carbon Inorganic materials 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- -1 carbon ions Chemical class 0.000 description 9
- 230000002079 cooperative effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- XCVKVYNICFBSJQ-UHFFFAOYSA-N [Re].[C] Chemical compound [Re].[C] XCVKVYNICFBSJQ-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000006112 glass ceramic composition Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 1
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 208000000260 Warts Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- RMPDNUNCSUUGPF-UHFFFAOYSA-N [C].[Eu] Chemical compound [C].[Eu] RMPDNUNCSUUGPF-UHFFFAOYSA-N 0.000 description 1
- RGSCXUOGQGNWFC-UHFFFAOYSA-N [Hf].[C] Chemical compound [Hf].[C] RGSCXUOGQGNWFC-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 201000010153 skin papilloma Diseases 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8408—Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/298,107 US6086730A (en) | 1999-04-22 | 1999-04-22 | Method of sputtering a carbon protective film on a magnetic disk with high sp3 content |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW570991B true TW570991B (en) | 2004-01-11 |
Family
ID=23149061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089107572A TW570991B (en) | 1999-04-22 | 2000-04-21 | Method of sputtering a carbon protective film on a magnetic disk with high sp3 content |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6086730A (enExample) |
| EP (1) | EP1046726B1 (enExample) |
| JP (1) | JP5022533B2 (enExample) |
| DE (1) | DE60042533D1 (enExample) |
| MY (1) | MY124998A (enExample) |
| SG (1) | SG100616A1 (enExample) |
| TW (1) | TW570991B (enExample) |
Families Citing this family (126)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290821B1 (en) * | 1999-07-15 | 2001-09-18 | Seagate Technology Llc | Sputter deposition utilizing pulsed cathode and substrate bias power |
| US6350353B2 (en) * | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
| US6565719B1 (en) | 2000-06-27 | 2003-05-20 | Komag, Inc. | Magnetic disk comprising a first carbon overcoat having a high SP3 content and a second carbon overcoat having a low SP3 content |
| US6902773B1 (en) * | 2000-11-21 | 2005-06-07 | Hitachi Global Storage Technologies Netherlands, B.V. | Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings |
| US6638608B1 (en) | 2001-03-16 | 2003-10-28 | Seagate Technology Llc | Protection overcoat for recording media |
| US20030049496A1 (en) * | 2001-09-11 | 2003-03-13 | Pocker Daryl J. | Thin film protective layer with buffering interface |
| US6875492B1 (en) | 2001-11-15 | 2005-04-05 | Maxtor Corporation | Carbon overcoat for magnetic recording medium |
| US6767592B2 (en) | 2001-12-05 | 2004-07-27 | Seagate Technology Llc | Method for thin film protective overcoat |
| DE10203730B4 (de) * | 2002-01-30 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Abscheidung von metallfreien Kohlenstoffschichten |
| US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
| US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
| US20040209123A1 (en) * | 2003-04-17 | 2004-10-21 | Bajorek Christopher H. | Method of fabricating a discrete track recording disk using a bilayer resist for metal lift-off |
| US7300556B2 (en) * | 2003-08-29 | 2007-11-27 | Hitachi Global Storage Technologies Netherlands B.V. | Method for depositing a thin film adhesion layer |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| US9771648B2 (en) | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| US20050151300A1 (en) * | 2004-01-13 | 2005-07-14 | Harper Bruce M. | Workpiece isothermal imprinting |
| US20050151282A1 (en) * | 2004-01-13 | 2005-07-14 | Harper Bruce M. | Workpiece handler and alignment assembly |
| US20050150862A1 (en) * | 2004-01-13 | 2005-07-14 | Harper Bruce M. | Workpiece alignment assembly |
| US7686606B2 (en) * | 2004-01-20 | 2010-03-30 | Wd Media, Inc. | Imprint embossing alignment system |
| US7329114B2 (en) * | 2004-01-20 | 2008-02-12 | Komag, Inc. | Isothermal imprint embossing system |
| US20050155554A1 (en) * | 2004-01-20 | 2005-07-21 | Saito Toshiyuki M. | Imprint embossing system |
| US20060066248A1 (en) * | 2004-09-24 | 2006-03-30 | Zond, Inc. | Apparatus for generating high current electrical discharges |
| US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| US20050249983A1 (en) * | 2004-05-06 | 2005-11-10 | Seagate Technology Llc | Thickness gradient protective overcoat layers by filtered cathodic arc deposition |
| US20060278521A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for controlling ion density and energy using modulated power signals |
| US7758982B2 (en) * | 2005-09-02 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | SiN overcoat for perpendicular magnetic recording media |
| US8900771B2 (en) * | 2006-08-17 | 2014-12-02 | GM Global Technology Operations LLC | Non-noble metal inexpensive conductive coatings for fuel cell bipolar plates |
| EP1912266A1 (en) * | 2006-10-10 | 2008-04-16 | STMicroelectronics S.r.l. | Method of forming phase change memory devices in a pulsed DC deposition chamber |
| JP2008171505A (ja) * | 2007-01-12 | 2008-07-24 | Showa Denko Kk | 炭素保護膜の形成方法及び磁気記録媒体の製造方法、磁気記録媒体並びに磁気記録再生装置 |
| US20080311012A1 (en) * | 2007-06-12 | 2008-12-18 | Uri Levy | Transmissive window for hydrooptic disinfection system |
| JP5117895B2 (ja) | 2008-03-17 | 2013-01-16 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 磁気記録媒体及びその製造方法 |
| JP2009238299A (ja) * | 2008-03-26 | 2009-10-15 | Hoya Corp | 垂直磁気記録媒体および垂直磁気記録媒体の製造方法 |
| JP5453666B2 (ja) | 2008-03-30 | 2014-03-26 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 磁気ディスク及びその製造方法 |
| JP2011034603A (ja) * | 2008-03-31 | 2011-02-17 | Hoya Corp | 垂直磁気記録媒体 |
| WO2010038773A1 (ja) | 2008-09-30 | 2010-04-08 | Hoya株式会社 | 磁気ディスク及びその製造方法 |
| WO2010064724A1 (ja) | 2008-12-05 | 2010-06-10 | Hoya株式会社 | 磁気ディスク及びその製造方法 |
| WO2010116908A1 (ja) | 2009-03-28 | 2010-10-14 | Hoya株式会社 | 磁気ディスク用潤滑剤化合物及び磁気ディスク |
| SG165294A1 (en) | 2009-03-30 | 2010-10-28 | Wd Media Singapore Pte Ltd | Perpendicular magnetic recording medium and method of manufacturing the same |
| US20100300884A1 (en) | 2009-05-26 | 2010-12-02 | Wd Media, Inc. | Electro-deposited passivation coatings for patterned media |
| US9330685B1 (en) | 2009-11-06 | 2016-05-03 | WD Media, LLC | Press system for nano-imprinting of recording media with a two step pressing method |
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