TW569451B - Process for fabricating a vertical bipolar junction transistor, process for fabricating an integrated circuit structure, and integrated circuit structure - Google Patents
Process for fabricating a vertical bipolar junction transistor, process for fabricating an integrated circuit structure, and integrated circuit structure Download PDFInfo
- Publication number
- TW569451B TW569451B TW091119025A TW91119025A TW569451B TW 569451 B TW569451 B TW 569451B TW 091119025 A TW091119025 A TW 091119025A TW 91119025 A TW91119025 A TW 91119025A TW 569451 B TW569451 B TW 569451B
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/956,382 US6759730B2 (en) | 2001-09-18 | 2001-09-18 | Bipolar junction transistor compatible with vertical replacement gate transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW569451B true TW569451B (en) | 2004-01-01 |
Family
ID=25498168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091119025A TW569451B (en) | 2001-09-18 | 2002-08-22 | Process for fabricating a vertical bipolar junction transistor, process for fabricating an integrated circuit structure, and integrated circuit structure |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6759730B2 (enExample) |
| JP (1) | JP4797185B2 (enExample) |
| KR (1) | KR100918779B1 (enExample) |
| GB (1) | GB2383190B (enExample) |
| TW (1) | TW569451B (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706603B2 (en) * | 2001-02-23 | 2004-03-16 | Agere Systems Inc. | Method of forming a semiconductor device |
| US6929983B2 (en) * | 2003-09-30 | 2005-08-16 | Cabot Microelectronics Corporation | Method of forming a current controlling device |
| DE102004055213B4 (de) * | 2004-11-16 | 2009-04-09 | Atmel Germany Gmbh | Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen |
| US7365016B2 (en) * | 2004-12-27 | 2008-04-29 | Dalsa Semiconductor Inc. | Anhydrous HF release of process for MEMS devices |
| JP2006310651A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置の製造方法 |
| US7714355B1 (en) * | 2005-12-20 | 2010-05-11 | National Semiconductor Corp | Method of controlling the breakdown voltage of BSCRs and BJT clamps |
| TWI305669B (en) * | 2006-07-14 | 2009-01-21 | Nanya Technology Corp | Method for making a raised vertical channel transistor device |
| DE102008047127B4 (de) * | 2008-05-30 | 2010-07-08 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung integral ausgebildeter Drain- und Source-Gebiete in einem Silizium/Germanium enthaltenden Transistorbauelement und Halbleiterbauelement |
| US7820532B2 (en) * | 2008-12-29 | 2010-10-26 | Honeywell International Inc. | Methods for simultaneously forming doped regions having different conductivity-determining type element profiles |
| KR20110016325A (ko) * | 2009-08-11 | 2011-02-17 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
| GB201105953D0 (en) * | 2011-04-07 | 2011-05-18 | Metryx Ltd | Measurement apparatus and method |
| US9349902B2 (en) | 2012-06-01 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for reducing irregularities on the surface of a backside illuminated photodiode |
| KR20140026156A (ko) * | 2012-08-24 | 2014-03-05 | 에스케이하이닉스 주식회사 | 액세스 소자 및 제조 방법, 이를 포함하는 반도체 메모리 소자 |
| US9209095B2 (en) | 2014-04-04 | 2015-12-08 | International Business Machines Corporation | III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method |
| US9406793B2 (en) * | 2014-07-03 | 2016-08-02 | Broadcom Corporation | Semiconductor device with a vertical channel formed through a plurality of semiconductor layers |
| US9847233B2 (en) * | 2014-07-29 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and formation thereof |
| US9716155B2 (en) * | 2015-12-09 | 2017-07-25 | International Business Machines Corporation | Vertical field-effect-transistors having multiple threshold voltages |
| US10217817B2 (en) | 2016-01-27 | 2019-02-26 | International Business Machines Corporation | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs |
| US10096673B2 (en) | 2016-02-17 | 2018-10-09 | International Business Machines Corporation | Nanowire with sacrificial top wire |
| US9530866B1 (en) | 2016-04-13 | 2016-12-27 | Globalfoundries Inc. | Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts |
| US9799751B1 (en) | 2016-04-19 | 2017-10-24 | Globalfoundries Inc. | Methods of forming a gate structure on a vertical transistor device |
| US9640636B1 (en) | 2016-06-02 | 2017-05-02 | Globalfoundries Inc. | Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device |
| US10170616B2 (en) | 2016-09-19 | 2019-01-01 | Globalfoundries Inc. | Methods of forming a vertical transistor device |
| US10347745B2 (en) | 2016-09-19 | 2019-07-09 | Globalfoundries Inc. | Methods of forming bottom and top source/drain regions on a vertical transistor device |
| US9859172B1 (en) * | 2016-09-29 | 2018-01-02 | International Business Machines Corporation | Bipolar transistor compatible with vertical FET fabrication |
| US9882025B1 (en) | 2016-09-30 | 2018-01-30 | Globalfoundries Inc. | Methods of simultaneously forming bottom and top spacers on a vertical transistor device |
| US9966456B1 (en) | 2016-11-08 | 2018-05-08 | Globalfoundries Inc. | Methods of forming gate electrodes on a vertical transistor device |
| KR20180066708A (ko) * | 2016-12-09 | 2018-06-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US9935018B1 (en) | 2017-02-17 | 2018-04-03 | Globalfoundries Inc. | Methods of forming vertical transistor devices with different effective gate lengths |
| US10229999B2 (en) | 2017-02-28 | 2019-03-12 | Globalfoundries Inc. | Methods of forming upper source/drain regions on a vertical transistor device |
| US10014370B1 (en) | 2017-04-19 | 2018-07-03 | Globalfoundries Inc. | Air gap adjacent a bottom source/drain region of vertical transistor device |
| US10269800B2 (en) * | 2017-05-26 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical gate semiconductor device with steep subthreshold slope |
| US9991359B1 (en) | 2017-06-15 | 2018-06-05 | International Business Machines Corporation | Vertical transistor gated diode |
| JP7056994B2 (ja) * | 2018-05-08 | 2022-04-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 柱状半導体装置の製造方法 |
| US10900952B2 (en) * | 2019-05-16 | 2021-01-26 | International Business Machines Corporation | Dual surface charge sensing biosensor |
| US11355585B2 (en) | 2019-10-01 | 2022-06-07 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor |
| US11563084B2 (en) | 2019-10-01 | 2023-01-24 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor |
| US11404540B2 (en) | 2019-10-01 | 2022-08-02 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor |
| US11189701B1 (en) * | 2020-12-11 | 2021-11-30 | International Business Machines Corporation | Bipolar junction transistor with vertically integrated resistor |
| WO2023069241A2 (en) * | 2021-09-29 | 2023-04-27 | Owl Autonomous Imaging, Inc. | Methods and systems for a photon detecting structure and device using colloidal quantum dots |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4366495A (en) | 1979-08-06 | 1982-12-28 | Rca Corporation | Vertical MOSFET with reduced turn-on resistance |
| US4455565A (en) | 1980-02-22 | 1984-06-19 | Rca Corporation | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
| US4587713A (en) | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| US4837606A (en) | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
| JPS6126261A (ja) | 1984-07-16 | 1986-02-05 | Nippon Telegr & Teleph Corp <Ntt> | 縦形ｍｏｓ電界効果トランジスタの製造方法 |
| US4786953A (en) | 1984-07-16 | 1988-11-22 | Nippon Telegraph & Telephone | Vertical MOSFET and method of manufacturing the same |
| JPS61269377A (ja) * | 1985-05-24 | 1986-11-28 | Hitachi Ltd | 半導体装置 |
| US4764801A (en) * | 1985-10-08 | 1988-08-16 | Motorola Inc. | Poly-sidewall contact transistors |
| US4851362A (en) | 1987-08-25 | 1989-07-25 | Oki Electric Industry Co., Ltd. | Method for manufacturing a semiconductor device |
| IT1217323B (it) * | 1987-12-22 | 1990-03-22 | Sgs Microelettronica Spa | Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione |
| JPH01238166A (ja) * | 1988-03-18 | 1989-09-22 | Fujitsu Ltd | 半導体装置 |
| US5342797A (en) | 1988-10-03 | 1994-08-30 | National Semiconductor Corporation | Method for forming a vertical power MOSFET having doped oxide side wall spacers |
| US5001533A (en) | 1988-12-22 | 1991-03-19 | Kabushiki Kaisha Toshiba | Bipolar transistor with side wall base contacts |
| US5208172A (en) | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
| US5252849A (en) * | 1992-03-02 | 1993-10-12 | Motorola, Inc. | Transistor useful for further vertical integration and method of formation |
| US5324673A (en) * | 1992-11-19 | 1994-06-28 | Motorola, Inc. | Method of formation of vertical transistor |
| JPH07161726A (ja) * | 1993-12-08 | 1995-06-23 | Canon Inc | バイポーラトランジスタ |
| US5484737A (en) * | 1994-12-13 | 1996-01-16 | Electronics & Telecommunications Research Institute | Method for fabricating bipolar transistor |
| JP2613029B2 (ja) * | 1994-12-16 | 1997-05-21 | 財団法人韓国電子通信研究所 | 超自己整合垂直構造バイポーラトランジスターの製造方法 |
| US5538908A (en) * | 1995-04-27 | 1996-07-23 | Lg Semicon Co., Ltd. | Method for manufacturing a BiCMOS semiconductor device |
| US5576238A (en) | 1995-06-15 | 1996-11-19 | United Microelectronics Corporation | Process for fabricating static random access memory having stacked transistors |
| US5668391A (en) | 1995-08-02 | 1997-09-16 | Lg Semicon Co., Ltd. | Vertical thin film transistor |
| US5683930A (en) | 1995-12-06 | 1997-11-04 | Micron Technology Inc. | SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of making |
| FR2756104B1 (fr) * | 1996-11-19 | 1999-01-29 | Sgs Thomson Microelectronics | Fabrication de circuits integres bipolaires/cmos |
| JP3087674B2 (ja) | 1997-02-04 | 2000-09-11 | 日本電気株式会社 | 縦型ｍｏｓｆｅｔの製造方法 |
| US6297531B2 (en) | 1998-01-05 | 2001-10-02 | International Business Machines Corporation | High performance, low power vertical integrated CMOS devices |
| US6242775B1 (en) * | 1998-02-24 | 2001-06-05 | Micron Technology, Inc. | Circuits and methods using vertical complementary transistors |
| US6072216A (en) | 1998-05-01 | 2000-06-06 | Siliconix Incorporated | Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance |
| US6197641B1 (en) | 1998-08-28 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
| US6027975A (en) * | 1998-08-28 | 2000-02-22 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
-
2001
- 2001-09-18 US US09/956,382 patent/US6759730B2/en not_active Expired - Lifetime
-
2002
- 2002-08-22 TW TW091119025A patent/TW569451B/zh not_active IP Right Cessation
- 2002-08-30 GB GB0220210A patent/GB2383190B/en not_active Expired - Fee Related
- 2002-09-17 KR KR1020020056476A patent/KR100918779B1/ko not_active Expired - Fee Related
- 2002-09-18 JP JP2002270858A patent/JP4797185B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030024626A (ko) | 2003-03-26 |
| GB0220210D0 (en) | 2002-10-09 |
| GB2383190B (en) | 2006-05-24 |
| GB2383190A (en) | 2003-06-18 |
| US20030052721A1 (en) | 2003-03-20 |
| JP4797185B2 (ja) | 2011-10-19 |
| JP2003179067A (ja) | 2003-06-27 |
| KR100918779B1 (ko) | 2009-09-23 |
| US6759730B2 (en) | 2004-07-06 |
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