TW563127B - MRAM device including offset conductors - Google Patents

MRAM device including offset conductors Download PDF

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Publication number
TW563127B
TW563127B TW091114865A TW91114865A TW563127B TW 563127 B TW563127 B TW 563127B TW 091114865 A TW091114865 A TW 091114865A TW 91114865 A TW91114865 A TW 91114865A TW 563127 B TW563127 B TW 563127B
Authority
TW
Taiwan
Prior art keywords
memory cell
conductors
conductor
patent application
scope
Prior art date
Application number
TW091114865A
Other languages
English (en)
Chinese (zh)
Inventor
Manish Sharma
Manoj Bhattacharyya
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of TW563127B publication Critical patent/TW563127B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
TW091114865A 2001-08-01 2002-07-04 MRAM device including offset conductors TW563127B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/920,225 US6385083B1 (en) 2001-08-01 2001-08-01 MRAM device including offset conductors

Publications (1)

Publication Number Publication Date
TW563127B true TW563127B (en) 2003-11-21

Family

ID=25443380

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091114865A TW563127B (en) 2001-08-01 2002-07-04 MRAM device including offset conductors

Country Status (6)

Country Link
US (1) US6385083B1 (enExample)
EP (1) EP1282132A3 (enExample)
JP (1) JP2003142662A (enExample)
KR (1) KR100898040B1 (enExample)
CN (1) CN1308959C (enExample)
TW (1) TW563127B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735111B2 (en) * 2002-01-16 2004-05-11 Micron Technology, Inc. Magnetoresistive memory devices and assemblies
JP2003346474A (ja) * 2002-03-19 2003-12-05 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6507513B1 (en) * 2002-06-20 2003-01-14 Hewlett-Packard Company Using delayed electrical pulses with magneto-resistive devices
US7251156B2 (en) * 2002-11-28 2007-07-31 Nxp B.V. Magnetic memory architecture with shared current line
AU2003276533A1 (en) * 2002-11-28 2004-06-18 Koninklijke Philips Electronics N.V. Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device
US6836429B2 (en) * 2002-12-07 2004-12-28 Hewlett-Packard Development Company, L.P. MRAM having two write conductors
US7126200B2 (en) * 2003-02-18 2006-10-24 Micron Technology, Inc. Integrated circuits with contemporaneously formed array electrodes and logic interconnects
JP4315703B2 (ja) * 2003-02-27 2009-08-19 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
US6987692B2 (en) * 2003-10-03 2006-01-17 Hewlett-Packard Development Company, L.P. Magnetic memory having angled third conductor
US7327591B2 (en) * 2004-06-17 2008-02-05 Texas Instruments Incorporated Staggered memory cell array
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
EP1667160B1 (en) * 2004-12-03 2011-11-23 Samsung Electronics Co., Ltd. Magnetic memory device and method
KR100612878B1 (ko) * 2004-12-03 2006-08-14 삼성전자주식회사 자기 메모리 소자와 그 제조 및 동작방법
CN100509006C (zh) * 2005-03-25 2009-07-08 北京欧纳尔生物工程技术有限公司 治疗抑郁症的药物组合物及其制法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069815A (en) * 1997-12-18 2000-05-30 Siemens Aktiengesellschaft Semiconductor memory having hierarchical bit line and/or word line architecture
EP0959475A3 (en) * 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
JP2000076843A (ja) * 1998-05-18 2000-03-14 Canon Inc 磁性薄膜メモリ素子およびその記録再生方法、画像録画再生装置
US6034887A (en) * 1998-08-05 2000-03-07 International Business Machines Corporation Non-volatile magnetic memory cell and devices
US6873546B2 (en) * 2000-03-09 2005-03-29 Richard M. Lienau Method and apparatus for reading data from a ferromagnetic memory cell
US6236590B1 (en) * 2000-07-21 2001-05-22 Hewlett-Packard Company Optimal write conductors layout for improved performance in MRAM
JP3854793B2 (ja) * 2000-10-03 2006-12-06 キヤノン株式会社 磁気抵抗効果素子を用いたメモリ

Also Published As

Publication number Publication date
CN1400607A (zh) 2003-03-05
CN1308959C (zh) 2007-04-04
EP1282132A2 (en) 2003-02-05
KR100898040B1 (ko) 2009-05-19
EP1282132A3 (en) 2003-12-10
KR20030014582A (ko) 2003-02-19
US6385083B1 (en) 2002-05-07
JP2003142662A (ja) 2003-05-16

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MM4A Annulment or lapse of patent due to non-payment of fees