KR100898040B1 - 데이터 저장 장치 - Google Patents

데이터 저장 장치 Download PDF

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Publication number
KR100898040B1
KR100898040B1 KR1020020045172A KR20020045172A KR100898040B1 KR 100898040 B1 KR100898040 B1 KR 100898040B1 KR 1020020045172 A KR1020020045172 A KR 1020020045172A KR 20020045172 A KR20020045172 A KR 20020045172A KR 100898040 B1 KR100898040 B1 KR 100898040B1
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KR
South Korea
Prior art keywords
memory cell
conductor
conductors
memory cells
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020020045172A
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English (en)
Korean (ko)
Other versions
KR20030014582A (ko
Inventor
샤르마매니쉬
바타차야매노즈
Original Assignee
삼성전자주식회사
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Publication of KR20030014582A publication Critical patent/KR20030014582A/ko
Application granted granted Critical
Publication of KR100898040B1 publication Critical patent/KR100898040B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
KR1020020045172A 2001-08-01 2002-07-31 데이터 저장 장치 Expired - Fee Related KR100898040B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/920,225 US6385083B1 (en) 2001-08-01 2001-08-01 MRAM device including offset conductors
US09/920,225 2001-08-01

Publications (2)

Publication Number Publication Date
KR20030014582A KR20030014582A (ko) 2003-02-19
KR100898040B1 true KR100898040B1 (ko) 2009-05-19

Family

ID=25443380

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020045172A Expired - Fee Related KR100898040B1 (ko) 2001-08-01 2002-07-31 데이터 저장 장치

Country Status (6)

Country Link
US (1) US6385083B1 (enExample)
EP (1) EP1282132A3 (enExample)
JP (1) JP2003142662A (enExample)
KR (1) KR100898040B1 (enExample)
CN (1) CN1308959C (enExample)
TW (1) TW563127B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735111B2 (en) * 2002-01-16 2004-05-11 Micron Technology, Inc. Magnetoresistive memory devices and assemblies
JP2003346474A (ja) * 2002-03-19 2003-12-05 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6507513B1 (en) * 2002-06-20 2003-01-14 Hewlett-Packard Company Using delayed electrical pulses with magneto-resistive devices
US7251156B2 (en) * 2002-11-28 2007-07-31 Nxp B.V. Magnetic memory architecture with shared current line
ES2406304T3 (es) * 2002-11-28 2013-06-06 Crocus Technology, Inc. Procedimiento y dispositivo para la generación mejorada de campos magnéticos durante una operación de escritura de un dispositivo de memoria magnetorresistente
US6836429B2 (en) * 2002-12-07 2004-12-28 Hewlett-Packard Development Company, L.P. MRAM having two write conductors
US7126200B2 (en) * 2003-02-18 2006-10-24 Micron Technology, Inc. Integrated circuits with contemporaneously formed array electrodes and logic interconnects
JP4315703B2 (ja) * 2003-02-27 2009-08-19 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
US6987692B2 (en) * 2003-10-03 2006-01-17 Hewlett-Packard Development Company, L.P. Magnetic memory having angled third conductor
US7327591B2 (en) * 2004-06-17 2008-02-05 Texas Instruments Incorporated Staggered memory cell array
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
EP1667160B1 (en) * 2004-12-03 2011-11-23 Samsung Electronics Co., Ltd. Magnetic memory device and method
KR100612878B1 (ko) * 2004-12-03 2006-08-14 삼성전자주식회사 자기 메모리 소자와 그 제조 및 동작방법
CN100509006C (zh) * 2005-03-25 2009-07-08 北京欧纳尔生物工程技术有限公司 治疗抑郁症的药物组合物及其制法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104632A (en) * 1998-05-18 2000-08-15 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
US6236590B1 (en) * 2000-07-21 2001-05-22 Hewlett-Packard Company Optimal write conductors layout for improved performance in MRAM
WO2001067459A1 (en) * 2000-03-09 2001-09-13 Lienau Richard M Method and apparatus for reading data from a ferromagnetic memory cell
JP2002117669A (ja) * 2000-10-03 2002-04-19 Canon Inc 磁気抵抗効果素子を用いたメモリ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069815A (en) * 1997-12-18 2000-05-30 Siemens Aktiengesellschaft Semiconductor memory having hierarchical bit line and/or word line architecture
JP2000076843A (ja) * 1998-05-18 2000-03-14 Canon Inc 磁性薄膜メモリ素子およびその記録再生方法、画像録画再生装置
US6034887A (en) * 1998-08-05 2000-03-07 International Business Machines Corporation Non-volatile magnetic memory cell and devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104632A (en) * 1998-05-18 2000-08-15 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
WO2001067459A1 (en) * 2000-03-09 2001-09-13 Lienau Richard M Method and apparatus for reading data from a ferromagnetic memory cell
US6236590B1 (en) * 2000-07-21 2001-05-22 Hewlett-Packard Company Optimal write conductors layout for improved performance in MRAM
JP2002117669A (ja) * 2000-10-03 2002-04-19 Canon Inc 磁気抵抗効果素子を用いたメモリ

Also Published As

Publication number Publication date
CN1308959C (zh) 2007-04-04
TW563127B (en) 2003-11-21
US6385083B1 (en) 2002-05-07
JP2003142662A (ja) 2003-05-16
EP1282132A3 (en) 2003-12-10
CN1400607A (zh) 2003-03-05
KR20030014582A (ko) 2003-02-19
EP1282132A2 (en) 2003-02-05

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