TW559811B - Semiconductor memory device and control method thereof - Google Patents
Semiconductor memory device and control method thereof Download PDFInfo
- Publication number
- TW559811B TW559811B TW090125810A TW90125810A TW559811B TW 559811 B TW559811 B TW 559811B TW 090125810 A TW090125810 A TW 090125810A TW 90125810 A TW90125810 A TW 90125810A TW 559811 B TW559811 B TW 559811B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- capacitive elements
- semiconductor memory
- memory device
- charge
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims description 45
- 239000003990 capacitor Substances 0.000 claims abstract description 72
- 210000004027 cell Anatomy 0.000 claims description 291
- 210000000352 storage cell Anatomy 0.000 claims description 95
- 230000015654 memory Effects 0.000 claims description 83
- 238000001514 detection method Methods 0.000 claims description 54
- 238000011084 recovery Methods 0.000 claims description 52
- 230000008878 coupling Effects 0.000 claims description 38
- 238000010168 coupling process Methods 0.000 claims description 38
- 238000005859 coupling reaction Methods 0.000 claims description 38
- 230000008859 change Effects 0.000 claims description 18
- 238000012360 testing method Methods 0.000 claims description 18
- 230000003321 amplification Effects 0.000 claims description 17
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- 230000001939 inductive effect Effects 0.000 claims description 13
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- 230000002093 peripheral effect Effects 0.000 claims 8
- 230000003071 parasitic effect Effects 0.000 description 28
- 238000010586 diagram Methods 0.000 description 25
- 238000012546 transfer Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- 239000010408 film Substances 0.000 description 12
- 230000007704 transition Effects 0.000 description 7
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/227—Timing of memory operations based on dummy memory elements or replica circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001096380A JP3992449B2 (ja) | 2001-03-29 | 2001-03-29 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW559811B true TW559811B (en) | 2003-11-01 |
Family
ID=18950298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090125810A TW559811B (en) | 2001-03-29 | 2001-10-18 | Semiconductor memory device and control method thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6567298B2 (https=) |
| JP (1) | JP3992449B2 (https=) |
| KR (1) | KR100776606B1 (https=) |
| TW (1) | TW559811B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7310356B2 (en) * | 2002-06-24 | 2007-12-18 | Paradyne Corporation | Automatic discovery of network core type |
| JP2004110863A (ja) * | 2002-09-13 | 2004-04-08 | Renesas Technology Corp | 半導体記憶装置 |
| US7103330B2 (en) * | 2003-01-28 | 2006-09-05 | Koninklijke Philips Electronics N.V. | Method of transmitting information between an information transmitter and an information receiver |
| JP2004265533A (ja) * | 2003-03-03 | 2004-09-24 | Matsushita Electric Ind Co Ltd | 半導体記憶回路 |
| US7827077B2 (en) * | 2003-05-02 | 2010-11-02 | Visa U.S.A. Inc. | Method and apparatus for management of electronic receipts on portable devices |
| US7226857B2 (en) | 2004-07-30 | 2007-06-05 | Micron Technology, Inc. | Front-end processing of nickel plated bond pads |
| DE102004041658A1 (de) * | 2004-08-27 | 2006-03-09 | Infineon Technologies Ag | Verfahren zum Testen eines integrierten Halbleiterspeichers |
| JP2007164938A (ja) * | 2005-12-16 | 2007-06-28 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US7619944B2 (en) * | 2007-01-05 | 2009-11-17 | Innovative Silicon Isi Sa | Method and apparatus for variable memory cell refresh |
| US8804449B2 (en) | 2012-09-06 | 2014-08-12 | Micron Technology, Inc. | Apparatus and methods to provide power management for memory devices |
| US10122259B2 (en) * | 2015-09-16 | 2018-11-06 | Semiconductor Components Industries, Llc | Over power protection for power converter |
| US10217794B2 (en) | 2017-05-24 | 2019-02-26 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with vertical capacitors and methods for producing the same |
| US11450364B2 (en) * | 2020-08-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Computing-in-memory architecture |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778991B2 (ja) * | 1988-07-26 | 1995-08-23 | 株式会社東芝 | 半導体メモリ |
| JP2762589B2 (ja) * | 1989-07-21 | 1998-06-04 | 日本電気株式会社 | 半導体メモリ回路 |
| KR960006283B1 (ko) * | 1991-08-26 | 1996-05-13 | 닛본덴기 가부시끼가이샤 | 반도체 디램(dram) 장치 |
| JP2874469B2 (ja) * | 1991-08-26 | 1999-03-24 | 日本電気株式会社 | 半導体ダイナミックｒａｍ装置 |
| JPH05120870A (ja) * | 1991-10-24 | 1993-05-18 | Nec Ibaraki Ltd | Ｄ−ｒａｍのリフレツシユ方式 |
| JPH05121650A (ja) * | 1991-10-25 | 1993-05-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路装置 |
| JP3274728B2 (ja) * | 1992-12-17 | 2002-04-15 | 株式会社 沖マイクロデザイン | 半導体集積回路装置 |
| JPH06223568A (ja) * | 1993-01-29 | 1994-08-12 | Mitsubishi Electric Corp | 中間電位発生装置 |
| JP3297124B2 (ja) * | 1993-02-24 | 2002-07-02 | 三菱電機株式会社 | ダイナミック型半導体記憶装置 |
| JP3278981B2 (ja) * | 1993-06-23 | 2002-04-30 | 株式会社日立製作所 | 半導体メモリ |
| JP2731701B2 (ja) * | 1993-06-30 | 1998-03-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Ｄｒａｍセル |
| JPH07201177A (ja) * | 1993-12-28 | 1995-08-04 | Sanyo Electric Co Ltd | １／２ｖｃｃ発生回路の共用化方式 |
| JP3583482B2 (ja) * | 1994-10-04 | 2004-11-04 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JP2576425B2 (ja) * | 1994-10-27 | 1997-01-29 | 日本電気株式会社 | 強誘電体メモリ装置 |
| JP3369041B2 (ja) * | 1996-03-19 | 2003-01-20 | 富士通株式会社 | 半導体記憶装置 |
| JPH1055681A (ja) * | 1996-08-12 | 1998-02-24 | Sony Corp | 半導体装置 |
| KR100256253B1 (ko) * | 1997-06-26 | 2000-05-15 | 김영환 | 비휘발성 반도체 메모리 장치 |
| JPH1125688A (ja) * | 1997-07-02 | 1999-01-29 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
| JP3492168B2 (ja) * | 1997-10-21 | 2004-02-03 | シャープ株式会社 | 不揮発性半導体記憶装置 |
| JP2000030440A (ja) * | 1998-07-08 | 2000-01-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP4334646B2 (ja) * | 1999-01-20 | 2009-09-30 | パナソニック株式会社 | 半導体記憶装置の制御方法 |
| JP2000215660A (ja) | 1999-01-25 | 2000-08-04 | Nec Corp | 半導体記憶装置 |
| JP3604576B2 (ja) * | 1999-02-19 | 2004-12-22 | シャープ株式会社 | 強誘電体メモリ装置 |
| JP4555416B2 (ja) * | 1999-09-22 | 2010-09-29 | 富士通セミコンダクター株式会社 | 半導体集積回路およびその制御方法 |
-
2001
- 2001-03-29 JP JP2001096380A patent/JP3992449B2/ja not_active Expired - Fee Related
- 2001-10-18 TW TW090125810A patent/TW559811B/zh not_active IP Right Cessation
- 2001-10-23 US US09/983,148 patent/US6567298B2/en not_active Expired - Lifetime
- 2001-11-08 KR KR1020010069362A patent/KR100776606B1/ko not_active Expired - Fee Related
-
2003
- 2003-04-02 US US10/404,153 patent/US6847540B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020077020A (ko) | 2002-10-11 |
| JP2002298576A (ja) | 2002-10-11 |
| US20030202393A1 (en) | 2003-10-30 |
| US20020141226A1 (en) | 2002-10-03 |
| KR100776606B1 (ko) | 2007-11-16 |
| JP3992449B2 (ja) | 2007-10-17 |
| US6847540B2 (en) | 2005-01-25 |
| US6567298B2 (en) | 2003-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |