TW553948B - Process for preparing tantalum alkoxides and niobium alkoxides - Google Patents
Process for preparing tantalum alkoxides and niobium alkoxides Download PDFInfo
- Publication number
- TW553948B TW553948B TW091105014A TW91105014A TW553948B TW 553948 B TW553948 B TW 553948B TW 091105014 A TW091105014 A TW 091105014A TW 91105014 A TW91105014 A TW 91105014A TW 553948 B TW553948 B TW 553948B
- Authority
- TW
- Taiwan
- Prior art keywords
- niobium
- alkoxide
- reaction
- alcohol
- tantalum
- Prior art date
Links
- -1 tantalum alkoxides Chemical class 0.000 title claims abstract 11
- 229910052758 niobium Inorganic materials 0.000 title claims description 8
- 239000010955 niobium Substances 0.000 title claims description 8
- 229910052715 tantalum Inorganic materials 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 15
- 229910004537 TaCl5 Inorganic materials 0.000 claims abstract description 7
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims abstract description 7
- 229910019804 NbCl5 Inorganic materials 0.000 claims abstract 4
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000000706 filtrate Substances 0.000 claims description 7
- 150000004703 alkoxides Chemical class 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 239000000047 product Substances 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 239000011541 reaction mixture Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 230000002079 cooperative effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 abstract description 6
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QUWPZPLTANKXAM-UHFFFAOYSA-N niobium(5+) Chemical compound [Nb+5] QUWPZPLTANKXAM-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 description 3
- 238000005292 vacuum distillation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ZXVOCOLRQJZVBW-UHFFFAOYSA-N azane;ethanol Chemical compound N.CCO ZXVOCOLRQJZVBW-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WZECUPJJEIXUKY-UHFFFAOYSA-N [O-2].[O-2].[O-2].[U+6] Chemical compound [O-2].[O-2].[O-2].[U+6] WZECUPJJEIXUKY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000007046 ethoxylation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- YWOITFUKFOYODT-UHFFFAOYSA-N methanol;sodium Chemical compound [Na].OC YWOITFUKFOYODT-UHFFFAOYSA-N 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910000439 uranium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C29/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring
- C07C29/68—Preparation of metal alcoholates
- C07C29/70—Preparation of metal alcoholates by converting hydroxy groups to O-metal groups
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10113169A DE10113169A1 (de) | 2001-03-19 | 2001-03-19 | Verfahren zur Herstellung von Tantal- und Niobalkoholaten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW553948B true TW553948B (en) | 2003-09-21 |
Family
ID=7678014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091105014A TW553948B (en) | 2001-03-19 | 2002-03-18 | Process for preparing tantalum alkoxides and niobium alkoxides |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6548685B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4002956B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR100871001B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN100445250C (cg-RX-API-DMAC7.html) |
| AU (1) | AU2002257617A1 (cg-RX-API-DMAC7.html) |
| DE (2) | DE10113169A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB2389361B (cg-RX-API-DMAC7.html) |
| RU (1) | RU2297405C2 (cg-RX-API-DMAC7.html) |
| TW (1) | TW553948B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2002074473A2 (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI391369B (zh) * | 2006-09-14 | 2013-04-01 | Starck H C Gmbh | 製造高純度鈮烷氧化物之方法 |
| TWI399340B (zh) * | 2005-08-27 | 2013-06-21 | Starck H C Gmbh | 高純度鋯、鉿、鉭及鈮烷氧化物之製法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090134369A1 (en) * | 2007-11-26 | 2009-05-28 | Applied Nanoworks, Inc. | Metal alkoxides, apparatus for manufacturing metal alkoxides, related methods and uses thereof |
| RU2381231C2 (ru) * | 2008-03-21 | 2010-02-10 | Общество с ограниченной ответственностью "Научно-исследовательский и производственный центр "ВНИПИМ-ТОС" | Способ получения пентабутоксидов ниобия и тантала |
| RU2532926C1 (ru) * | 2013-09-12 | 2014-11-20 | Федеральное государственное унитарное предприятие "Государственный ордена Трудового Красного Знамени научно-исследовательский институт химических реактивов и особо чистых химических веществ", Министерства образования и науки Российской Федерации | Способ получения сверхвысокомолекулярного полиэтилена (свмпэ), модифицированного наноразмерными частицами пентоксида тантала |
| DE102016205229A1 (de) | 2016-03-30 | 2017-10-05 | Evonik Degussa Gmbh | Synthese von Alkylammoniumsalzen durch Umsetzung von Aminen mit organischen Karbonaten als Alkylierungsmittel |
| CN106186066B (zh) * | 2016-07-14 | 2018-03-09 | 上海交通大学 | 一种利用废旧钽电容器制备超细氧化钽的方法 |
| CN107021870B (zh) * | 2016-12-02 | 2020-06-09 | 苏州复纳电子科技有限公司 | 一种铌醇盐的合成方法 |
| CN115054931B (zh) * | 2022-08-18 | 2022-10-25 | 稀美资源(广东)有限公司 | 一种用于乙醇钽粗产品的分离设备 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160915A (en) * | 1981-03-27 | 1982-10-04 | Nippon Soda Co Ltd | Composition forming thin tantalum oxide film |
| JPS5895615A (ja) * | 1981-11-30 | 1983-06-07 | Nippon Soda Co Ltd | 酸化ニオブ薄膜形成用組成物 |
| SU1310381A1 (ru) * | 1984-10-02 | 1987-05-15 | Мгу@Им.М.В.Ломоносова | Способ получени алкогол тов металлов |
| US4741894A (en) * | 1986-06-03 | 1988-05-03 | Morton Thiokol, Inc. | Method of producing halide-free metal and hydroxides |
| JP2831431B2 (ja) * | 1990-04-10 | 1998-12-02 | 株式会社ジャパンエナジー | 高純度金属アルコキサイドの製造方法 |
| JPH04362017A (ja) * | 1991-06-06 | 1992-12-15 | Nikko Kyodo Co Ltd | 配向性Ｔａ２Ｏ５薄膜の作製方法 |
| US5858323A (en) * | 1996-01-08 | 1999-01-12 | Sandia Corporation | Sol-gel preparation of lead magnesium niobate (PMN) powders and thin films |
| JP3082027B2 (ja) * | 1996-11-08 | 2000-08-28 | 株式会社高純度化学研究所 | ニオブアルコキシドおよびタンタルアルコキシドの 精製方法 |
| JP3911740B2 (ja) * | 1996-11-18 | 2007-05-09 | 昭和電工株式会社 | タンタルアルコキシドの製造方法 |
| JP2000237588A (ja) * | 1999-02-18 | 2000-09-05 | Toyota Central Res & Dev Lab Inc | 排ガス浄化用触媒担体の製造方法 |
| RU2190590C1 (ru) * | 2001-01-09 | 2002-10-10 | Государственное унитарное предприятие "Всероссийский научно-исследовательский институт химической технологии" | Способ получения алкоголятов редких и редкоземельных металлов |
-
2001
- 2001-03-19 DE DE10113169A patent/DE10113169A1/de not_active Withdrawn
-
2002
- 2002-03-06 KR KR1020037012141A patent/KR100871001B1/ko not_active Expired - Fee Related
- 2002-03-06 RU RU2003130646/04A patent/RU2297405C2/ru not_active IP Right Cessation
- 2002-03-06 DE DE10291037T patent/DE10291037B4/de not_active Expired - Fee Related
- 2002-03-06 CN CNB028065476A patent/CN100445250C/zh not_active Expired - Fee Related
- 2002-03-06 JP JP2002573174A patent/JP4002956B2/ja not_active Expired - Fee Related
- 2002-03-06 AU AU2002257617A patent/AU2002257617A1/en not_active Abandoned
- 2002-03-06 WO PCT/EP2002/002428 patent/WO2002074473A2/de not_active Ceased
- 2002-03-06 GB GB0322019A patent/GB2389361B/en not_active Expired - Fee Related
- 2002-03-15 US US10/098,639 patent/US6548685B2/en not_active Expired - Fee Related
- 2002-03-18 TW TW091105014A patent/TW553948B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI399340B (zh) * | 2005-08-27 | 2013-06-21 | Starck H C Gmbh | 高純度鋯、鉿、鉭及鈮烷氧化物之製法 |
| TWI391369B (zh) * | 2006-09-14 | 2013-04-01 | Starck H C Gmbh | 製造高純度鈮烷氧化物之方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2389361B (en) | 2004-09-15 |
| KR100871001B1 (ko) | 2008-11-27 |
| GB0322019D0 (en) | 2003-10-22 |
| JP2005503334A (ja) | 2005-02-03 |
| RU2003130646A (ru) | 2005-04-10 |
| DE10291037D2 (de) | 2004-01-22 |
| AU2002257617A1 (en) | 2002-10-03 |
| CN100445250C (zh) | 2008-12-24 |
| CN1537089A (zh) | 2004-10-13 |
| DE10291037B4 (de) | 2008-03-20 |
| RU2297405C2 (ru) | 2007-04-20 |
| DE10113169A1 (de) | 2002-09-26 |
| GB2389361A (en) | 2003-12-10 |
| US6548685B2 (en) | 2003-04-15 |
| WO2002074473A2 (de) | 2002-09-26 |
| KR20040015069A (ko) | 2004-02-18 |
| US20020143200A1 (en) | 2002-10-03 |
| WO2002074473A3 (de) | 2004-04-01 |
| JP4002956B2 (ja) | 2007-11-07 |
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