TW529154B - Semiconductor device and liquid crystal module using the same - Google Patents

Semiconductor device and liquid crystal module using the same Download PDF

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Publication number
TW529154B
TW529154B TW090132531A TW90132531A TW529154B TW 529154 B TW529154 B TW 529154B TW 090132531 A TW090132531 A TW 090132531A TW 90132531 A TW90132531 A TW 90132531A TW 529154 B TW529154 B TW 529154B
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Taiwan
Prior art keywords
semiconductor wafer
electrode
aforementioned
semiconductor device
semiconductor
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Application number
TW090132531A
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English (en)
Inventor
Kenji Toyosawa
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Sharp Kk
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Publication of TW529154B publication Critical patent/TW529154B/zh

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Description

529154 A7 ____ B7 五、發明説明（1 ) 發明之技術領域 本發明係有關一種使用輸送膠帶安裝半導體晶片之半導 體裝置的封裝構造，及使用該半導體裝置之液晶模組。 發明背景 用於個人％知之監視森的液晶顯不裝置或行動電話之終 端裝置及遊戲機等可攜式機器設備中，係利用膠帶自動接 合法（TAB，Tape Automated Bonding)將半導體晶片安裝於 有機底材構成的輸送膠帶。其安裝上，係使用輸送膠帶式 封裝體（TCP ; Tape Carrier Package)、薄膜黏晶（c〇F ; Chip on Film)等封裝構造。尤其，TCP構造薄型化適用於 薄型化，廣泛用於前述形態的機器。 圖12為說明前述TCP構造中典型先前技術之安裝方法的 剖面圖。輸送膠帶（tape carrier)3係在聚醯亞胺等有機材料 構成的底材1圖案化形成銅（Cu)配線圖案2。前述銅配線圖 案2中的導腳部2 a、2 b，係從底材1邊緣部相平行而延伸。 其中導腳部2a連接於液晶面板的銲塾，導腳部2b則與傳送 笔源或圖像資料訊號的印刷基板的銲塾相連接。該等連接 係電性連接’其經由各向異性導電膜來進行。 底材1上，對應於所安裝之半導體晶片4，係形成有元件 孔5。前述銅配線圖案2拉入該元件孔5内形成内部引線 2c。對前述銅配線圖案2之前述内部引線。和導腳部、 2b部分實施錫（sn)電鍍（未圖示）。前述内部引線2c與排列 於矩形半導體晶片4之四邊的金質凸塊6相對應，其從四邊 突出於前述元件孔5内。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 529154 A7
>利用切割而從晶圓切出的半導體晶片4，其金質凸塊6與 典電解電鍍义S η共晶接合於内部引線2 c，此即内部引線接 合（ILB ; Inner Lead Bonding)。 藉由樹脂7的封裝將上述所安裝半導體晶片4的元件面及 内部引線2 c周邊予以封裝，以維持機械強度及避免受到周 遭環境影響。另外，輸送膠帶3之内部引線2c等的電極部 分以外係覆蓋耐焊劑8加以保護。將以上製程直接在輸送膠 帶3上連續進行，以有效率地進行安裝。 然而，由於近年電子機器設備高機能化，不再是一件輸 送膠帶上安裝一個晶片，而希冀一件輸送膠帶上能夠安裝 複數個晶片的構造。因此以下舉一例說明裝設於前述手機 之終端裝置或遊戲機等小型機器内的液晶模組。 液晶模組因應液晶面板配線數的增加，在該驅動j C内設 置1己憶體’以使驅動動作效率化，但最後卻因像素數增加 或色彩化而導致$己憶體容量擴增。例如，利用共用及區段 驅動器，以所需之製程一體製作共用及區段驅動器和靜態 隨機存取記憶體（SRAM)時，SRAM部分會占半導體晶片面 積的6成。 另一面，為了控制液晶面板的像素對比，驅動器部分必須 維持耐壓，因而以微細加工製作不適宜。但是，由於記憶 體部分並沒有耐壓的限制，所以可適用精細製程。換言 之，精細製程雖不適用於驅動器部分，但卻可適用於記憶 體部分，故可因應相當於前述液晶面板配線數之積體化。 如此，可分別以最適製程形成前述驅動器部分和記憶體 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱) 529154 A7 -— B7五、發明説明（3 ) 部分’並將所形成之驅動器晶片和SRAM晶片之兩個半導 體晶片安裝於1個輸送膠帶上。 實現2個半導體晶片之安裝的先前技術，係記載於日本公 開特许公報「特開平1 1 一 54695號公報（公開日1999年2月 2 6日）」。該構成如下所述。 該構成並非前述ILB構造，其係在接合晶片接合於引導框 架的第一半導體晶片上疊層第二半導體晶片。疊層時，將 第二半導體晶片面朝下，且構成上側之第二半導體晶片的 銲球融點比構成下側之第一半導體晶片的銲球融點高，以 防止錦球在銲錫時掉落。如此，可達成前述疊層而不需使 用引線接合’並降低封裝高度。此外，形成第二半導體晶 片比第一半導體晶片小，利用支持線支撐非重疊部分，即 可使厚度變薄而不需前述引導框架。 但是’由於上述之以往技術係銲錫接合，端子距僅可縮 短至100 # m左右，以致產生無法因應液晶面板高精細化的 問題。 發明概述 本發明之目的，在提供一種於實現複數晶片之疊層安裝 時’可縮小端子距之半導體裝置，及使用其之液晶模組。 本發明之半導體裝置為了達成上述目的，係包含以下構 件：輸送膠帶，其在包含開口部的底材上形成配線圖案， 並包含該配線圖案延伸於前述開口部内而形成的内部引 線；半導體晶片，其係安裝於前述輸送膠帶上，收容於前 述輸送膠帶之前述開口部内，並經由金質凸塊使形成於電
裝 訂
二線 -6- ^紙張尺度通用中國國家標準(CNS) A4規格(210X 297公釐)— 529154 A7 _B7 五、發明説明（4 ) 極面之第一電極與前述内部引線相連接；及電子零件，其 係經由前述半導體晶片而安裝於輸送膠帶上，經由金質凸 塊使形成於前述半導體晶片之前述電極面的第二電極與該 電子零件之電極相連接。 根據上述構成，在TCP構造之半導體裝置中，係以内部 引線接合（ILB )安裝半導體晶片，並在該半導體晶片上疊層 其他電子零件，以達成複數晶片之安裝，而半導體晶片與 内部引線及半導體晶片與電子零件間係經由金質凸塊來連 接。 因此’較硬的金質凸塊與較軟的銲塊相比，其接合時不 僅變形少’也可將端子距縮短至45//m左右，且2〇 mm左右 的晶片大小可獲得450以上的輸出端子數。其結果，可因應 液θθ面板的局精細化。 本發明之其他目的、特徵以及優點，透過以下所示記載 即可明瞭。此外，本發明之優點可參考所添付之圖示並透 過以下說明即可明瞭。 圖式之簡單說明 圖1為本發明第一實施形態之半導體裝置的剖面圖。 圖2為圖1之前述半導體裝置之製作順序的俯視圖。 圖3為圖1之前述半導體裝置之製作順序的俯視圖。 圖4為圖1之前述半導體裝置之製作順序的俯視圖。 圖5為圖1之其他構造的剖面圖。 圖6為圖1之其他構造的剖面圖。 圖7為圖1之其他構造的剖面圖。 本紙張尺度適用中國國家標準(CNS) A4規格(⑽X 297公董)_ 529154 A7 B7 五、發明説明（5 圖8為本發明第二實施形態之半導體裝置的剖面圖。 圖9為本發明第二實施形態之半導體裝置的剖面圖。
圖1 0為本發明第三實施形態之半導體裝置的剖面圖。 圖1 1為本發明第三實施形態之半導體裝置的剖面圖。 圖1 2為TCP典型以往技術之半導體裝置的剖面圖。 發明之實施形態
裝 以下參考圖1至圖7說明本發明之第一實施例。 圖1為本發明第一實施形態之半導體裝置的剖視圖，圖 2〜圖4為圖1之俯視圖，而圖4中以參考符號A — A表示圖i 之剖面線。
輸送膠帶13在聚醯亞胺等有機材料構成的底材u上圖案 化形成銅配線圖案1 2。前述銅配線圖案1 2從底材1 1邊緣部 相平行地引出其導腳部12a、12b。導腳部12a經由各向異 性導電膜等連接液晶面板，導腳部1 2 b則與傳送電源或影 像資料訊號之印刷基板的電極相連接。此處的連接係電性 連接與機械連接。藉由液晶面板、印刷基板及連接兩者之 半導體裝置，構成液晶模組。 接合前述液晶面板時’例如係將各向異性導電膜（A c F ; Anisotoropic Conductive Film)壓設於液晶面板的接合部 分，並使用面板安裝機從上方接合半導體裝置即可完成。 其接合條件係溫度為200°C，時間為2秒，壓力43MPa。 底材1 1上，與ILB所安裝之半導體晶片1 4相對應，係形 成有元件孔1 5。前述銅配線圖案1 2拉入該元件孔1 5内，形 成内部引線12c。對前述銅配線圖案12之前述内部引線12c -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 529154
和導腳部12a、12b部分實施以電鍍（未圖示）。如圖2所 示，前述内部引線12c與排列於矩形半導體晶片14四邊之 金質凸塊1 6相對應，從四邊突出於前述元件孔丨5内。 利用切割從晶圓所切出的半導體晶片i 4，其金質凸塊^ 6 係與無電解電鍍之Sn共晶接合於内部引線12〇，並進行匕B 安裝。前述Sn電鍍厚度係〇.5_左右，其藉由形成内部引 線12c之Cu與合金層，使純Sn層呈〇15^m左右。而對内 部引線12c的電鍍也可使用金（Au)。 值得注意的係本發明中，為了 ILB而於半導體晶片丨4外 緣形成金質凸塊1 6的同時，於内緣形成金質凸塊丨7，如圖 1和圖3所不，在半導體晶片14上進一步安裝半導體晶片 1 8 ^ 如圖4所示，藉由封裝樹脂2〇的封裝將所安裝半導體晶片 14的元件面及内部引線12c周邊予以封裝，以維持機械強 度及避免文到周遭環境影響。另外，輸送膠帶13之内部引 線12c等的電極部分以外係覆蓋耐焊劑21加以保護。以上 之製程係直接在輸送膠帶13上連續進行，以有效率地安 裝。 幻C半導a豆日9片1 4係用以驅動前述液晶面板之共用電極 和區段電極之液晶驅動j c。利用前半製程將半導體晶片夏4 製成0.6#m，即使將其製成17χ1·6 mm的大小，也可藉由 金質凸塊1 7、1 9將端子距縮短至5〇 “ m ;在共用電極側具 備9 6輸出端子，在區段電極側具備3〇8輸出端子。換言 之，削述金質凸塊1 6、1 7之大小係8 5 X 40 // m。前述半導 -_________- 9 - 本紙張尺度適用中國國豕標準(CNS) A4規格(210X297公寶)
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-k 529154 A7 __B7 五、發明説明（7 ) ^ — 體晶片18係SRAM，其由前半的製程製作〇.35//m ,而形成 大小為1 4 X 1.0 mm的晶片。 金質凸塊1 7、1 9係形成平均1 〇 # m的高度，只需形成其 中一個即可。此外，二個半導體晶片1 4、1 8係内面研磨至 400 # m的高度。藉此，該半導體裝置的總厚度低於1;1 mm，與一個晶片構成TCP半導體裝置的情形大致相同。也 可不進行内面研磨，為了達到前述薄型化，考慮晶片的破 裂及處理，最好為50/zm以上。 半導體晶片1 4之金質凸塊1 6利用内部引線接合機而接合 内部引線1 2 c。半導體晶片1 4 ' 1 8的金質凸塊1 7、1 9利用 倒裝片接合機而接合，其接合條件係溫度為5 0 0 °C，時間 為2秒，壓力在一個金質凸塊17或19下為20〜30 gf。 接合後，半導體晶片1 4、1 8間的空隙只有20 # m左右， 並注入未滿樹脂。之後，封裝3 〇 m g液狀樹脂，利用二次 硬化爐以125。(：初期硬化20分鐘左右，然後再經3小時125 °C的二次硬化。如前所述，只形成金質凸塊1 7、1 9中之任 一者時，前述空隙只有10 # m左右，前述未滿樹脂的黏度 則為2 P a · S左右的低黏度。 藉由上述構成，在TCP構造的半導體裝置中疊層二個半 導體晶片1 4、1 8時，半導體晶片1 4為了 ILB而形成所需之 金質凸塊1 6時，可同時形成金質凸塊1 7，且較硬的金質凸 塊1 7、1 9與較軟的銲塊相比，其接合時變形少，如前所 述，可縮短端子距。 此外，上述構成中，半導體晶片1 8以放入元件孔1 5内所 _____ -10- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 529154 A7 ______B7 五、發明説明（8 ) 形成之凹處的方式而配置。該凹處係利用内部引線接合機 將半導體晶.片1 4接合至内部引線丨2 c時，將内部引線1 2 a壓 入元件孔15内而形成。透過上述構成，半導體裝置整體之 厚度與只疊層半導體晶片1 4、1 8的情況相比，其厚度變 薄。 又’上述構成中，半導體晶片14係液晶驅動1C ;半導體 晶片1 8與動態隨機存取記憶體（Dram )相比，其元件數雖 多’但耗電少，作為鄰接液晶驅動IC的記憶體係最佳的靜 態隨機存取記憶體（SRAM);即使分成上述二者，透過上述 叠層，也可形成相當於一個晶片的厚度，並可分別以最適 製程加以製作。 另外，圖1例中，雖利用樹脂2 〇覆蓋半導體晶片1 8整 月豆’但與半導體晶片1 4相同，如圖5所示，只覆蓋元件面 也能達成薄型化。 此外，取代前述未滿樹脂，於ILB後，如圖6所示，也可 在裝設半導體晶片丨4之半導體晶片1 8的區域封裝非導電膠 (NCP ; Non Conductive Paste)25，並如圖 7 所示，利用倒 裝片接合機予以接合。此時接合條件係溫度為2 〇 〇 t，時 間為2秒。接合後，從半導體晶片1 8側，朝其側部封裝環 氧樹脂，並以125°C初期硬化20分鐘左右，再以125。(：二a 硬化3小時左右。 以下參考圖8及圖9說明本發明之第二實施形態。 圖8及圖9為本發明第二實施形態之半導體裝置的剖视 圖。該半導體裝置與前述半導體裝置類似，相對應部分係 -11- 529154 A7 _____B7 五、發明説明（9 ) 標上相同參考符號並省略其說明。 值仔注意的係該等圖8及圖9所示半導體裝置中，以ilb 安裝於輸送膠帶13之半導體晶片31係用以驅動液晶面板之 區段電極的液晶驅動1C ,將作為用以驅動共用電極之液晶 驅動1C的半導體晶片32接合於該半導體晶片31上，而半導 體晶片3 2上’則進一步接合作為sram之半導體晶片3 3。 如此’與前述相同’半導體晶片3 1利用内部引線接合機 使其金質凸塊1 6接合内部引線1 2 c，該等金質凸塊1 7、1 9 則利用倒裝片接合機而接合於半導體晶片3 !、3 2間。半導 月豆日9片3 3 ,首先使黏貼在其内面之切割片3 4本身於切割時 的發揮接合作用，以與半導體晶片32的内面相貼合。其 次，利用金線3 6使半導體晶片33中露出的鋁銲墊35 ,如圖 8所π接合於内部引線丨2 c ,此外如圖9所示，接合於銅配 線圖案1 2。 如圖8所示，前述金線3 6接合於内部引線丨2 c時，利用與 金線36相同之接合工具，先將徑長1〇〇//111左右的金質銲塊 37接合於前述鋁銲墊35。前述金線36係徑長汕〜以#^左 右’金質鋒塊3 8接合内部引線1 2 c後，接合於前述金質銲 塊3 7。藉此，可防止金線3 6與半導體晶片3 3之邊緣接觸時 發生焊接不良。此外，半導體晶片3 2的寬度比半導體晶片 3 1窄。如此，如上所述，接合於内部引線丨2 ς時，可減少 接合工具與半導體晶片3 2間的接觸不良。 與此相對’如圖9所示，前述金線3 6接合於銅配線圖案 12時’先在鋁銲墊35形成金質銲塊37，接著將前述金線 ___ -12- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 529154
3 6接合於銅配線圖案丨2。此時，藉由金線3 6的回線使厚度 達110 /z m左右。 半導體晶片3 3即使比半導體晶片3 2略大也可作引線接 。。藉由上述構成’可分開各機能半導體晶片31〜33而不 需改變安裝面積，並提升半導體晶片的效能。 以下參考圖1 〇及圖1 i說明本發明之第三實施形態。 圖1 0及圖1 1為本發明第三實施形態之半導體裝置的剖視 圖。該半導體裝置與前述圖8及圖9所示半導體裝置類似， 相對應部分係標上相同參考符號並省略其說明。 值知注意的係該等圖1 〇及圖1 1所示半導體裝置中，前述 半導體晶片3 3上係接合有作為控制j c的半導體晶片4 i ^ 圖ίο之構成中，半導體晶片41與半導體晶片33相同，利 用切割片42將其内面接合至較半導體晶片33之鋁銲墊”内 側的區域。鋁銲墊43藉由金線44而接合内部引線12(："\ 與此相對，圖1 1之構成中，半導體晶片4丨與半導體晶片 3 2相同，其元件面與半導體晶片3 3之元件面相對，並利用 倒裝片接合機與該等金質凸塊45、46相接合。如上所述， 可更加疊層為多層。 如上所述，本發明之半導體裝置的構成係包含：輸送膠 帶，其在包含開口部的底材上形成配線圖案，並包含該配 線圖案延伸於前述開口部内而形成的内部引線；半導體晶 片，其係安裝於前述輸送膠帶上的半導體晶片（半導體晶片 14)，收容於前述輸送膠帶之前述開口部内，並經由=質凸 塊使形成於電極面之第一電極與前述内部引線相連接；及 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐） 11 五、發明説明（ 電子零件’其係經由前述半導體晶片而安裝於輸送膠帶上 的電子零件(半導體晶片18)，經由金質凸塊使形成於前述 半導體晶片之前述電極面的第二電極與該電子零件之電極 相連接。如此，可因應液晶面板的高精細化。 此外，本發明之半導體裝置的構成，最好係在前述電子 零件上疊層内面彼此相貼合之其他電子零件，且該其他電 子零件的電極利用引線接合方式連接前述㈣引線或輸送 膠帶上之配線圖案。 如此，為了實現其他電子零件3層以上的昼層，利用引線 接合方式連接該其他電子料之㈣與前述㈣？丨線或輸 达膠帶上之配線圖案。從而可安裝3個以上的晶片。 再者，本發明之半導體裝置中，前述電予零件的寬度最 好比前述半導體晶片窄。 如此，可達成前述3層以上的構造，且利用引線接合方式 連接其他電子零件之電極與内部引線時，可減少接合工且 與電子零件間的接觸不良。 又，本發明 < 半導體裝置中，前述半導體晶片係液晶驅 動1C ’前述電子零件係SRAM ^ 夕此與動怨奴機存取記憶體（DRAM)相比，元件數雖 ^、仁耗電少，可作為鄰接液晶驅動J C之最佳靜態隨機存 取圮憶體（SRAM)與前述半液晶驅動Ic的雙晶片構成，並 可分別以最適製程有效率地製作。 再者’本發明之半導體《置最好連接液晶面板以構成液 晶模組。 A7
日發明之詳細說明中的具體實施樣態或實施例係說明本發 之技術内谷’但本發明之解釋並不侷限於上述具體例， 在本發明的精神以及以下之申請專利範圍内，可做作各種 變化而加以實施。 元件符號之說明 1 1 ···底材（有機底材）， 1 2…銅配線圖案， 1 2a、1 2b…導腳部， 1 2c ···内部引線， 13···輸送膠帶（tapecarrier)， 14、31···半導體晶片， 1 5 ···元件孔， 16 ···金質凸塊（第一電極）， Ο···金質凸塊（第二電極）， 18 、32…半導體晶片（電子零件）， 1 9、45、46…金質凸塊， 20…樹脂， 2 1 ···耐焊劑， 33、 41…半導體晶片（第二電子零件）， 34、 42…切割片， 35、 43···铭鮮塾， 3 6、44 ···金線， 37、3 8…金質銲塊 _____-15- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐)
裝 訂

Claims (1)

  1. 六、申請專利範圍 1· 一種半導體裝置，其特徵為包含： 妥輸运膠帶，其在包含開口部的有機底材上形成配線圖 木，並包含孩配線圖案延伸於前述開口部内而形成的内 部引線； 半導體晶片，其係安裝於前述輸送膠帶上，收容於前 :輸送膠帶之前述開口部内，並經由金質凸塊使形成於 電極面 < 第一電極與前述内部引線相連接，·及 *電子零件，其係經由前述半導體晶片而安裝於輸送膠 帶上’經由金質凸塊使形成於前述半導體晶片之前述電 極面的第二電極與該電子零件之電極相連接。 •如申請㈣範目第i項之半㈣裝置，其中前述電子零件 的寬度比前述半導體晶片窄。
    4·如申請專利篇囹筮1话士士 @ “ ^ _ 體晶 其中前述内部引線
    塊’僅形成於其中任一電極側。 如申請專利範圍第1項之半導體裝置，其中進一步 以封裝前述半導體晶片和電子零件的樹脂， 其中進一步包含用
    529154 A8 B8 C8 D8 六、申請專利範圍 7. —種液晶模組，其特徵為： 其係將半導體裝置連接液晶面板而構成者， 前述半導體裝置為包含： 輸送膠帶，其在包含開口部的有機底材上形成配線圖 案，並包含該配線圖案延伸於前述開口部内而形成的内 部引線； 半導體晶片，其係安裝於前述輸送膠帶上，收容於前 述輸送膠帶之前述開口部内，並經由金質凸塊使形成於 電極面之第一電極與前述内部引線相連接；及 電子零件，其係經由前述半導體晶片而安裝於輸送膠 帶上，經由金質凸塊使形成於前述半導體晶片之前述電 極面的第二電極與該電子零件之電極相連接；且 前述半導體晶片係液晶驅動積體電路，前述電子零件 係靜態隨機存取記憶體。 8 . —種半導體裝置，其特徵為包含： 輸送膠帶，其在包含開口部的有機底材上形成配線圖 案，並包含該配線圖案延伸於前述開口部内而形成的内 部引線； 半導體晶片，其係安裝於前述輸送膠帶上，收容於前 述輸送膠帶之前述開口部内，並經由金質凸塊使形成於 電極面之第一電極與前述内部引線相連接； 電子零件，其係經由前述半導體晶片而安裝於輸送膠 帶上，經由金質凸塊使形成於前述半導體晶片之前述電 極面的第二電極與該電子零件之電極相連接；及
    本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
    申請專利範圍 m于零件 兴社則迷電子零件上以内 4層’並利用引線接合方式連接而安 二鮮方式 上。 ^輪礎膠帶 9 .如申請專利範圍第8項之半導體裝置，其中前迷〜 零件中之電極與前述内部引線係利用引線二電子 接。 、合方式連 瓜如申請專利範圍第8項之半導體裝置，其中前述第 零件中之電極與前述配線圖案係利用引拉^二電子 接。 ★ 3方式連 子零件 —電子 U·如申請專利範圍第8項之半導體裝置，其中前述電 的寬度比前述半導體晶片窄。 12·如申請專利範圍第8項之半導體裝置，其中前述第 零件上進一步疊層有第三電子零件。 13. —種半導體裝置，其係相對於在包含用以收容半導體晶 二足開口部的有機底材上形成有配線圖案的輸送膠帶， 稭由使前述半導體晶片連接前述配線圖案延伸於前述開 口部内而形成之内部引線，以安裝該半導體晶片，其特 徵為 與岫述半導體晶片之前述内部引線相對的電極面上， 利用金貝凸塊分別形成連接前述内部引線之第一電極和 第二電極，前述第二電極係連接金質凸塊所形成之其他 電子零件的電極，該電子零件經由前述半導體晶片而安 裝於前述輸送膠帶上。 -3- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）
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