TW512552B - An OLED fiber light source - Google Patents
An OLED fiber light source Download PDFInfo
- Publication number
- TW512552B TW512552B TW090119160A TW90119160A TW512552B TW 512552 B TW512552 B TW 512552B TW 090119160 A TW090119160 A TW 090119160A TW 90119160 A TW90119160 A TW 90119160A TW 512552 B TW512552 B TW 512552B
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- patent application
- fiber
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- organic
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- 239000000835 fiber Substances 0.000 title abstract description 27
- 230000005855 radiation Effects 0.000 abstract description 32
- 239000010410 layer Substances 0.000 description 77
- 238000000151 deposition Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 230000008021 deposition Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 238000001704 evaporation Methods 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 12
- 239000003566 sealing material Substances 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 8
- 229910000861 Mg alloy Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000007850 fluorescent dye Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000013305 flexible fiber Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 239000008358 core component Substances 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229920002457 flexible plastic Polymers 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 239000011133 lead Substances 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0607—Wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/182—OLED comprising a fiber structure
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Electrochemistry (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Description
512552 A8 B8 C8 D8 ^、申請專利範圍 料纖維； 該陰極包括鈣、金、銦、錳、錫、鉛、鋁、銀、鎂、 鎂/銀合金，或是第一氟化鈣或鋰子層與第二鋁或銀子層 的組合， 該至少一層有機輻射發射層包括包含至少一種聚合物 或至少一種有機分子層； 該陽極包括ITO、氧化錫、鎳或金層； 該障層包括Si02與Si3N4層； 該密封材料包括聚矽氧或環氧樹脂。 1 1、如申請專利範圍第1 〇項之有機輻射發射裝置， 該密封材料中另外包括磷光質或螢光染料，其被該有機輻 射發射層所發出之可見或紫外線照射而發出可見光。 1 2、如申請專利範圍第7項之有機輻射發射裝置，另 外包括一電激發光，其與該陰極與金屬接觸元件電性連接 〇 1 3、如申請專利範圍第1 2項之有機輻射發射裝置， 其中該裝置包括手持式撓性延長纖維型照明裝置。 1 4、如申請專利範圍第1 2項之有機輻射發射裝置， 其中該延長纖維包括一種實質上爲一維之物件，其扭轉或 盤繞成任何所需之二維或三維發光物件。 1 5、如申請專利範圍第1 2項之有機輻射發射裝置， 其中： (a)該延長纖維盤繞在管內或是在一平坦面板上；並 且密封於真空或惰性氣氛中；或 表紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） · 3 - (請先閲讀背面之注意事項再填寫本頁) 、1T. 經濟部智慧財產局員工消費合作社印製 512552 A8 B8 C8 _ D8 々、申請專利範圍 (b)該延長纖維另外包括一微型照相機，以供檢查管 子、導管與裂隙。 1 6、如申請專利範圍第6項之有機輻射發射裝置，另 外包括與該陰極與陽極電性連接的電激發光，而且其中該 延長纖維包括一指向邊緣發光照明裝置。 1 7、如申請專利範圍第1項之有機輻射發射裝置，其 中該裝置不包含平面透光裝置基板。 1 8、一種撓性纖維型有機輻射發射裝置，包括： 一撓性延長核心構件，其具有外表面； 一陰極，其內表面環繞該核心構件的外表面； 至少一層非平面有機輻射發射層，其內表面環繞並接 觸該陰極的外表面； 一輻射透射陽極，其內表面環繞並接觸該至少一層有 機輻射發射層的外表面； 一金屬接觸元件，其第一表面與該陽極外表面的第一 部分接觸；以及 一電激發光，其與該陰極及該金屬接觸元件電性連接 〇 1 9、如申請專利範圍第1 8項之裝置，另外包括： 五輻射透射濕氣障層，其內表面環繞該陽極的外表面 ;以及 一透光密封材料，其內表面環繞該障層的外表面。 20、如申請專利範圍第1 9項之裝置，其中： 該核心構件包括撓性金屬線、環繞玻璃纖維或撓性塑 本紙張又度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 鯓 經濟部智慧財產局員工消費合作社印製 -4- 512552 A8 Β8 C8 D8 ^、申請專利範圍 料纖維； (請先閲讀背面之注意事項再填寫本頁) 該陰極包括鈣、金、銦、錳、錫、鉛、鋁、銀、鎂、 鎂/銀合金，或是第一氟化鈣或鋰子層與第二鋁或銀子層 的組合； 該至少一層有機輻射發射層包括包含至少一種聚合物 或至少一種有機分子層； 該陽極包括ΙΤΟ、氧化錫、鎳或金層； 該金屬接觸元件包括與該陽極外表面的第一部分接觸 之金屬條狀物，或是環繞該陽極整個外表面周圍的金屬線
J 該障層包括Si〇2與Si3N4層； 該密封材料包括聚砂氧或環氧樹脂，其包含磷光質或 螢光染料’該磷光質或螢光染料被該有機輻射發射層所發 出之可見或紫外線照射而發出可見光。 2 1、如申請專利範圍第1 9項之裝置，其中該裝置包 括手持式撓性延長纖維型照明裝置。 22、如申請專利範圍第19項之裝置，其中： 經濟部智慧財產局員工消費合作社印製 該裝置盤繞在管內，或是在一平坦面板上；以及 密封於真空或惰性氣氛中。 2 3、如申請專利範圍第1 8項之裝置，其中該裝置不 包含平面可透光裝置基板。 2 4、一種製造撓性有機輻射發射裝置之方法，包括： 形成具有外部第一電極層的核心； 在該桌一電極層周圍沈積至少一層有機轄射發射層； 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X：297公釐） 512552 A8 B8 C8 __ _ D8 六、申請專利範圍 在該至少~層有機輻射發射層環繞沈積第二電極層； 以及 (請先閲讀背面之注意事項再填寫本頁) 使電源與該第一及第二電極層電性連接。 2 5、如申請專利範圍第2 4項之方法，其中： 該第一電極層包括陰極層； 該第二電極層包括輻射透射陽極層；而 該形成核心的步驟包括在一纖維核心構件周圍形成陰 極層。 26、如申請專利範圍第25項之方法，另外包括形成 金屬接觸元件’其第一部分與該陽極外表面的第二部分接 觸’而第二部分與該電源電性接觸。 2 7、如申請專利範圍第2 6項之方法，另外包括： 在該陽極周圍形成密封材料；以及 於形成密封材料步驟之前，在該陽極周圍形成濕氣障 層。 2 8、如申請專利範圍第2 7項之方法，其中： 該纖維核心構件包括撓性金屬線、環繞玻璃纖維或撓 性塑料纖維； 經濟部智慧財產局員工消費合作社印製 形成陰極的步驟包括，在該纖維核心構件周圍蒸發、 機鍍或電鍍#5、金、銦、猛、錫、錯、銘、銀、鎂、鎂/ 銀合金，或是第一氟化鈣或鋰子層與第二鋁或銀子層的組 合； 該形成至少一層有機輻射發射層的步驟包括在該陰極 周圍蒸發或溶液塗覆包含至少一種聚合物或至少一種有機 本#^張尺度適用中國國家標準（〇泌）人4規格（210\297公董) I —- 512552 A8 B8 C8 D8 六、申請專利範圍 ~ 分子層； 該形成陽極的步驟包括在該至少一層有機輻射發射層 周圍濺鍍、蒸發或電鍍IT0、氧化錫、鎳或金層； (請先閱讀背面之注意事項再填寫本頁) 該形成金屬接觸元件的步驟包括蒸發、濺鍍或電鍍金 屬條’其與陽極外表面的第一部分接觸，或在該陰極周圍 裝上金屬線； 該形成障層的步驟包括藉由濺鍍、蒸發或CVD沈積 Si〇2 與 Si3N4 層.； 該形成密封材料的步驟包括溶液塗覆包含磷光質或螢 光染料的聚矽氧或環氧樹脂，該磷光質或螢光染料被該有 機幅射發射層所發出之可見或紫外線照射而發出可見光。 29、如申請專利範圍第26項之方法，其中： 該裝置包括手持式撓性延長纖維型照明裝置；或者 該裝置盤繞在管內，或是在一平坦面板上，並且.密封 於真空或惰性氣氛中。 3 〇、如申請專利範圍第24項之方法，其中： 該第一電極層包括輻射透射陽極層； 該第二電極層包括陰極層；而 經濟部智慧財產局員工消費合作社印製 該裝置包括一具有方向性（directional)邊緣發光照明 裝置。 3 1、一種製造撓性纖維型有機輻射發射裝置的連續方 法，包括： 將具有外部第一電極層之撓性纖維核心構件自第一捲 軸纏繞到第二捲軸； 本紙張尺度適用中國國家摞準（CNS ) A4規格（210X297公釐） -7 - 512552 A8 B8 C8 _ D8 六、申請專利範圍 在第一沈積區中，於第一電極層周圍沈積至少一層有 機輻射發射層； (請先閱讀背面之注意事項#填寫本頁) 於第二沈積區內，在該至少一層有機輻射發射層周圍 沈積第二電極層； 自該第二捲軸鬆開該經塗覆核心，並將該經塗覆核心 分成數個撓性纖維部分；以及 使電源與至少第一纖維部分上的第一及第二電極電性 連接。 3 2、如申請專利範圍第3 1項之方法，其中·· 該第一電極層包括陰極層； 該第二電極層包括輻射透射陽極層；而 該形成核心的步驟包括在第三沈積區內，於一纖維核 心構件周圍形成陰極層。 3 3、如申請專利範圍第3 2項之方法，另外包括形成 金屬接觸元件，其第一部分與該陽極層外表面的第一部分 接觸，而第二部分與第四沈積區內的電源電性接觸。 34、如申請專利範圍第33項之方法，另外包括在第 五沈積區中，於該陽極層周圍形成密封材料。 經濟部智慧財產局員工消費合作社印製 3 5、如申請專利範圍第3 4項之方法，其中： 該撓性纖維核心構件包括撓性金屬線、環繞玻璃纖維 或撓性塑料纖維； 該形成陰極層的步驟包括，在該纖維核心構件周圍蒸 發、濺鍍、電鍍或化學氣相沈積鈣、金、銦、錳、錫、鉛 、鋁、銀、鎂、鎂/銀合金，或是第一氟化鈣或鋰子層與 本紙張尺度適用中國國家標準（CNS ) A4洗格（210X 297公釐） -8 - 經濟部智慧財產局員工消費合作社印製 512552 B8
夂、申請專利範圍 桌—銘或銀子層的組合； 开:^成至少一層有機_g射發射層的步驟包括在該陰極 周圍蒸發或溶液塗覆包含至少一種聚合物或至少一種有機 分子層； 該形成陽極層的步驟包括在該至少一層有機輻射發射 層周圍藉由濺鍍、蒸發、電鍍、化學氣相沈積或溶膠-凝 膠塗覆作用沈積ITO、氧化錫、鎳或金層； 該形成金屬接觸元件的步驟包括藉由蒸發、濺鍍、電 鍍或化學氣相沈積作用沈積金.屬條，其與陽極外表面的第 一部分接觸，或在該陰極周圍裝上金屬線； 該形成密封材料的步驟包括溶液塗覆包含磷光質或螢 光染料的聚矽氧或環氧樹脂，該磷光質或螢光染料被該有 機輻射發射層所發出之可見或紫外線照射而發出可見光。 J 6、如申g靑專利軺圍第3 5項之方法，其中該第一至 第四沈積區包括液相沈積區，其以下列順序自該第一捲軸 排列至第二捲軸：第三、第一、第二、第四與第五區。 3 7、如申請專利範圍第3 6項之方法，其中： 該形成陰極的步驟包括在該纖維核心構件周圍無電極· 電鍍或電鍍陰極層； 該形成至少一層有機輻射發射層的步驟包括在該陰極 周圍溶液塗覆至少一種聚合物或至少一種有機分子層； 該形成陽極的步驟包括在該至少一層有機輻射發射層 周圍無電極電鍍、電鍍或溶膠-凝膠塗覆該陽極層； 該形成金屬接觸兀件的步驟包括無電極電鍍或電纟度金 本紙張尺度適用中國國家標準（CNS) A4現格(210X 297公釐) 7〇Τ-- (請先閱讀背面之注意事項再填寫本頁)
512552 A8 B8 C8 __ D8 六、申請專利範圍 屬條狀物，其與陽極層的外表面第一部分接觸；以及 該形成密封材料的步驟包括溶液塗覆聚矽氧或環氧樹 脂。 (請先閲讀背面之注意事項再填寫本頁) 38、如申請專利範圍第36項之方法，另外包括在該 陰極層與陽極層的濺鍍、蒸發或化學氣相沈積期間，使該 纖維數面曝於該材料之下。 3 9、一種用以連續製造撓性纖維型有機輻射發射裝置 的設備，包括= 第一用具，其係用以將包含外部陰極層之撓性纖維核 心纒繞到第二用具上； 第三用具，其係用以在第一沈積區中，於該陰極層周 圍沈積至少一層有機輻射發射層；以及 第四用具，其係用於在第二沈積區中，於至少一層有 機輻射發射層周圍沈積一層有機輻射透射層。 40、如申請專利範圍第39項之設備，另外包括： 第五用具，其用以在第三沈積區中，於纖維核心構件 周圍形成陰極層；以及第六用具，其用以在第五沈積區中 ，於該陽極層周圍形成密封材料。 經濟部智慧財產局員工消費合作社印製 4 1、一種用以連續製造撓性纖維型有機輻射發射裝置 的設備，包括： 第一捲軸； 第二捲軸； 有機層沈積室，於該室內，在第一電極層周圍沈積至 少一層有機輻射發射層；以及 本紙張尺度適用中國國家摞準（CNS ) A4规格（2丨0X297公釐） _ 1〇 _ 512552 A8
Ao B8 C8 D8 六、申請專利範圍 第一電極沈積室，其可以塗覆纖維的數面，於該室中 ，在該至少一層有機輻射發射層周圍沈積第一電極層。 42、 如申請專利範圍第4 1項之設備，其中： (請先閲讀背面之注意事項再填寫本頁) 該有機層沈積室包含至少一個蒸發來源、一有機液體 槽或有機液體分配噴嘴； 該第一電極沈積室包含至少一個蒸發來源、至少一個 濺靶，或液態金屬槽；而且 另外包括_· 第二電極沈積室，其包含至少一個濺靶、至少一個可 塗覆纖維數面的蒸發來源或液態金屬槽；以及 密封材料沈積室，其包含液體槽或液體分配噴嘴。 43、 如申請專利範圍第42項之設備，其中該第一與 第二電極沈積室包括： 數個濺靶或蒸發來源，其位於該室周圍；或 至少一個皮帶輪，用以纏繞該纖維，使該纖維所有面 曝於濺靶或蒸發來源之下。 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 -
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| TW545079B (en) * | 2000-10-26 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device |
| US6984546B2 (en) * | 2001-03-15 | 2006-01-10 | Delta Optoelectronics, Inc. | Method for forming a thin film light emitting device |
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- 2001-08-16 JP JP2001246857A patent/JP2002184580A/ja not_active Withdrawn
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| JP2002184580A (ja) | 2002-06-28 |
| US6538375B1 (en) | 2003-03-25 |
| EP1180805A3 (en) | 2009-07-01 |
| EP1180805A2 (en) | 2002-02-20 |
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