TW495491B - Multi-function chamber for a substrate processing system - Google Patents
Multi-function chamber for a substrate processing system Download PDFInfo
- Publication number
- TW495491B TW495491B TW088108238A TW88108238A TW495491B TW 495491 B TW495491 B TW 495491B TW 088108238 A TW088108238 A TW 088108238A TW 88108238 A TW88108238 A TW 88108238A TW 495491 B TW495491 B TW 495491B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- chamber
- patent application
- scope
- item
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 279
- 238000012545 processing Methods 0.000 title claims description 58
- 238000001816 cooling Methods 0.000 claims abstract description 129
- 238000010438 heat treatment Methods 0.000 claims abstract description 118
- 239000007789 gas Substances 0.000 claims description 75
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- 239000007788 liquid Substances 0.000 claims description 3
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- 230000001276 controlling effect Effects 0.000 claims description 2
- 239000000110 cooling liquid Substances 0.000 claims 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- 239000004418 Lexan Substances 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
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- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
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- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Furnace Charging Or Discharging (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/082,375 US6086362A (en) | 1998-05-20 | 1998-05-20 | Multi-function chamber for a substrate processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW495491B true TW495491B (en) | 2002-07-21 |
Family
ID=22170808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088108238A TW495491B (en) | 1998-05-20 | 1999-05-20 | Multi-function chamber for a substrate processing system |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6086362A (enExample) |
| EP (1) | EP1099239A2 (enExample) |
| JP (2) | JP2002516484A (enExample) |
| KR (1) | KR100554016B1 (enExample) |
| TW (1) | TW495491B (enExample) |
| WO (1) | WO1999060609A2 (enExample) |
Families Citing this family (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6079693A (en) | 1998-05-20 | 2000-06-27 | Applied Komatsu Technology, Inc. | Isolation valves |
| US6517303B1 (en) | 1998-05-20 | 2003-02-11 | Applied Komatsu Technology, Inc. | Substrate transfer shuttle |
| US6416318B1 (en) * | 1999-06-16 | 2002-07-09 | Silicon Valley Group, Inc. | Process chamber assembly with reflective hot plate and pivoting lid |
| US6450805B1 (en) * | 1999-08-11 | 2002-09-17 | Tokyo Electron Limited | Hot plate cooling method and heat processing apparatus |
| EP1077274A1 (en) * | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes |
| US6303906B1 (en) | 1999-11-30 | 2001-10-16 | Wafermasters, Inc. | Resistively heated single wafer furnace |
| US6949143B1 (en) * | 1999-12-15 | 2005-09-27 | Applied Materials, Inc. | Dual substrate loadlock process equipment |
| US6547922B2 (en) * | 2000-01-31 | 2003-04-15 | Canon Kabushiki Kaisha | Vacuum-processing apparatus using a movable cooling plate during processing |
| JP2001319885A (ja) * | 2000-03-02 | 2001-11-16 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体製造方法 |
| WO2002023597A2 (en) | 2000-09-15 | 2002-03-21 | Applied Materials, Inc. | Double dual slot load lock for process equipment |
| US6483081B1 (en) * | 2000-11-27 | 2002-11-19 | Novellus Systems, Inc. | In-line cure furnace and method for using the same |
| FR2824663B1 (fr) * | 2001-05-14 | 2004-10-01 | Semco Sa | Procede et dispositif de dopage, diffusion et oxydation pyrolithique de plaquettes de silicium a pression reduite |
| US6902623B2 (en) * | 2001-06-07 | 2005-06-07 | Veeco Instruments Inc. | Reactor having a movable shutter |
| US6750155B2 (en) * | 2001-08-08 | 2004-06-15 | Lam Research Corporation | Methods to minimize moisture condensation over a substrate in a rapid cycle chamber |
| US6672864B2 (en) * | 2001-08-31 | 2004-01-06 | Applied Materials, Inc. | Method and apparatus for processing substrates in a system having high and low pressure areas |
| US7316966B2 (en) * | 2001-09-21 | 2008-01-08 | Applied Materials, Inc. | Method for transferring substrates in a load lock chamber |
| US7037063B2 (en) * | 2002-04-18 | 2006-05-02 | Display Manufacturing Services Co., Ltd. | Substrate floating apparatus and method of manufacturing liquid crystal display apparatus using the same |
| US7129694B2 (en) * | 2002-05-23 | 2006-10-31 | Applied Materials, Inc. | Large substrate test system |
| DE10227332A1 (de) * | 2002-06-19 | 2004-01-15 | Akt Electron Beam Technology Gmbh | Ansteuervorrichtung mit verbesserten Testeneigenschaften |
| US6774012B1 (en) * | 2002-11-08 | 2004-08-10 | Cypress Semiconductor Corp. | Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall |
| TWI360179B (en) * | 2003-09-19 | 2012-03-11 | Hitachi Int Electric Inc | Method for manufacturing a semiconductor device, a |
| US7207766B2 (en) * | 2003-10-20 | 2007-04-24 | Applied Materials, Inc. | Load lock chamber for large area substrate processing system |
| US20060038554A1 (en) * | 2004-02-12 | 2006-02-23 | Applied Materials, Inc. | Electron beam test system stage |
| US7355418B2 (en) * | 2004-02-12 | 2008-04-08 | Applied Materials, Inc. | Configurable prober for TFT LCD array test |
| US6833717B1 (en) | 2004-02-12 | 2004-12-21 | Applied Materials, Inc. | Electron beam test system with integrated substrate transfer module |
| US7319335B2 (en) * | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
| TWI286529B (en) * | 2004-05-06 | 2007-09-11 | Hannstar Display Corp | Method and structure for reception and delivery |
| US8648977B2 (en) * | 2004-06-02 | 2014-02-11 | Applied Materials, Inc. | Methods and apparatus for providing a floating seal having an isolated sealing surface for chamber doors |
| US8206075B2 (en) * | 2004-06-02 | 2012-06-26 | Applied Materials, Inc. | Methods and apparatus for sealing a chamber |
| US7497414B2 (en) * | 2004-06-14 | 2009-03-03 | Applied Materials, Inc. | Curved slit valve door with flexible coupling |
| US20060045667A1 (en) * | 2004-07-14 | 2006-03-02 | Savas Stephen E | Substrate handling system and process for manufacturing large substrates |
| US7075323B2 (en) * | 2004-07-29 | 2006-07-11 | Applied Materials, Inc. | Large substrate test system |
| US7317325B2 (en) * | 2004-12-09 | 2008-01-08 | Applied Materials, Inc. | Line short localization in LCD pixel arrays |
| JP4860167B2 (ja) * | 2005-03-30 | 2012-01-25 | 東京エレクトロン株式会社 | ロードロック装置，処理システム及び処理方法 |
| JP4619854B2 (ja) * | 2005-04-18 | 2011-01-26 | 東京エレクトロン株式会社 | ロードロック装置及び処理方法 |
| US7535238B2 (en) * | 2005-04-29 | 2009-05-19 | Applied Materials, Inc. | In-line electron beam test system |
| JP4586626B2 (ja) * | 2005-05-17 | 2010-11-24 | ソニー株式会社 | エッチング方法および半導体装置の製造方法 |
| US20060273815A1 (en) * | 2005-06-06 | 2006-12-07 | Applied Materials, Inc. | Substrate support with integrated prober drive |
| US20070006936A1 (en) * | 2005-07-07 | 2007-01-11 | Applied Materials, Inc. | Load lock chamber with substrate temperature regulation |
| TWI295816B (en) | 2005-07-19 | 2008-04-11 | Applied Materials Inc | Hybrid pvd-cvd system |
| US7845891B2 (en) * | 2006-01-13 | 2010-12-07 | Applied Materials, Inc. | Decoupled chamber body |
| TWI323788B (en) * | 2006-03-14 | 2010-04-21 | Applied Materials Inc | Method to reduce cross talk in a multi column e-beam test system |
| US8057633B2 (en) * | 2006-03-28 | 2011-11-15 | Tokyo Electron Limited | Post-etch treatment system for removing residue on a substrate |
| US20070254494A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Faceplate with rapid temperature change |
| US7602199B2 (en) * | 2006-05-31 | 2009-10-13 | Applied Materials, Inc. | Mini-prober for TFT-LCD testing |
| US7786742B2 (en) * | 2006-05-31 | 2010-08-31 | Applied Materials, Inc. | Prober for electronic device testing on large area substrates |
| US7665951B2 (en) * | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
| US7845618B2 (en) | 2006-06-28 | 2010-12-07 | Applied Materials, Inc. | Valve door with ball coupling |
| US8124907B2 (en) * | 2006-08-04 | 2012-02-28 | Applied Materials, Inc. | Load lock chamber with decoupled slit valve door seal compartment |
| US8252640B1 (en) | 2006-11-02 | 2012-08-28 | Kapre Ravindra M | Polycrystalline silicon activation RTA |
| US20080223294A1 (en) * | 2007-03-14 | 2008-09-18 | Applied Materials, Inc. | Flooding Chamber For Coating Installations |
| US7563725B2 (en) * | 2007-04-05 | 2009-07-21 | Solyndra, Inc. | Method of depositing materials on a non-planar surface |
| US20080251019A1 (en) * | 2007-04-12 | 2008-10-16 | Sriram Krishnaswami | System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates |
| US8752449B2 (en) | 2007-05-08 | 2014-06-17 | Brooks Automation, Inc. | Substrate transport apparatus with multiple movable arms utilizing a mechanical switch mechanism |
| US7855156B2 (en) * | 2007-05-09 | 2010-12-21 | Solyndra, Inc. | Method of and apparatus for inline deposition of materials on a non-planar surface |
| US20080279672A1 (en) * | 2007-05-11 | 2008-11-13 | Bachrach Robert Z | Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory |
| US20080292433A1 (en) * | 2007-05-11 | 2008-11-27 | Bachrach Robert Z | Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory |
| US20080279658A1 (en) * | 2007-05-11 | 2008-11-13 | Bachrach Robert Z | Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory |
| US7496423B2 (en) * | 2007-05-11 | 2009-02-24 | Applied Materials, Inc. | Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots |
| US10541157B2 (en) * | 2007-05-18 | 2020-01-21 | Brooks Automation, Inc. | Load lock fast pump vent |
| JP5416104B2 (ja) * | 2007-06-27 | 2014-02-12 | ブルックス オートメーション インコーポレイテッド | セルフベアリングモータ用位置フィードバック |
| US8659205B2 (en) * | 2007-06-27 | 2014-02-25 | Brooks Automation, Inc. | Motor stator with lift capability and reduced cogging characteristics |
| US8283813B2 (en) * | 2007-06-27 | 2012-10-09 | Brooks Automation, Inc. | Robot drive with magnetic spindle bearings |
| US9752615B2 (en) | 2007-06-27 | 2017-09-05 | Brooks Automation, Inc. | Reduced-complexity self-bearing brushless DC motor |
| US8823294B2 (en) * | 2007-06-27 | 2014-09-02 | Brooks Automation, Inc. | Commutation of an electromagnetic propulsion and guidance system |
| KR101660894B1 (ko) | 2007-06-27 | 2016-10-10 | 브룩스 오토메이션 인코퍼레이티드 | 다차원 위치 센서 |
| US20090011573A1 (en) * | 2007-07-02 | 2009-01-08 | Solyndra, Inc. | Carrier used for deposition of materials on a non-planar surface |
| CN101801817B (zh) | 2007-07-17 | 2015-07-22 | 布鲁克斯自动化公司 | 具备集成到室壁上的电动机的基片加工装置 |
| WO2009051764A1 (en) * | 2007-10-15 | 2009-04-23 | Solyndra, Inc. | Support system for solar energy generator panels |
| KR20110097908A (ko) * | 2008-11-28 | 2011-08-31 | 볼커 프로브스트 | 반도체 층 또는 원소 셀레늄 및/또는 황으로 처리된 코팅 기판, 특히 평면 기판의 제조 방법 |
| JP5835722B2 (ja) * | 2009-12-10 | 2015-12-24 | オルボテック エルティ ソラー，エルエルシー | 自動順位付け多方向直列型処理装置 |
| US8834155B2 (en) * | 2011-03-29 | 2014-09-16 | Institute of Microelectronics, Chinese Academy of Sciences | Wafer transfer apparatus and wafer transfer method |
| US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
| CN102618845B (zh) * | 2012-04-01 | 2014-06-11 | 中微半导体设备(上海)有限公司 | 具有遮挡板装置的反应器 |
| JP5765405B2 (ja) * | 2013-11-19 | 2015-08-19 | 株式会社ニコン | 基板接合装置及び基板接合方法 |
| EP3100298B1 (en) | 2014-01-27 | 2020-07-15 | Veeco Instruments Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
| US10054363B2 (en) * | 2014-08-15 | 2018-08-21 | WD Media, LLC | Method and apparatus for cryogenic dynamic cooling |
| US10892148B2 (en) | 2017-05-31 | 2021-01-12 | Seagate Technology Llc | Inflatable seal for media cooling |
| US10770097B2 (en) | 2017-12-22 | 2020-09-08 | Seagate Technology Llc | Element heater with back plane reflectors |
| US10854235B2 (en) | 2017-12-22 | 2020-12-01 | Seagate Technology Llc | Electrode including a continuously smooth channel |
| US10784310B2 (en) * | 2018-11-08 | 2020-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices |
| KR102773587B1 (ko) * | 2019-06-18 | 2025-02-27 | 주식회사 엘지에너지솔루션 | 전지셀 열전도도 측정장치 및 이를 이용한 전지셀 열전도도 측정 방법 |
| JP2024547174A (ja) * | 2021-12-30 | 2024-12-26 | テレフレックス メディカル インコーポレイテッド | 熱可塑性ポリマー組成物中の配合活性薬剤および製造方法 |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2114470B2 (de) * | 1971-03-25 | 1975-02-13 | Flachglas Ag Delog-Detag, 4650 Gelsenkirchen | Vorrichtung zum kontinuierlichen, einseitigen Beschichten von Platten, wie Glasscheiben, Keramik- oder Kunststoffplatten u. dgl. mittels Kathodenzerstäubung |
| US4047624A (en) * | 1975-10-21 | 1977-09-13 | Airco, Inc. | Workpiece handling system for vacuum processing |
| US5187115A (en) * | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
| US5259881A (en) * | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
| US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
| US4775281A (en) * | 1986-12-02 | 1988-10-04 | Teradyne, Inc. | Apparatus and method for loading and unloading wafers |
| JPS63141342A (ja) * | 1986-12-04 | 1988-06-13 | Ushio Inc | 半導体ウエハ処理方法及びその装置 |
| US4951601A (en) * | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
| US4913929A (en) * | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
| US4846102A (en) * | 1987-06-24 | 1989-07-11 | Epsilon Technology, Inc. | Reaction chambers for CVD systems |
| JPH0333058Y2 (enExample) * | 1987-06-26 | 1991-07-12 | ||
| JPS6411320A (en) * | 1987-07-06 | 1989-01-13 | Toshiba Corp | Photo-cvd device |
| US5001327A (en) * | 1987-09-11 | 1991-03-19 | Hitachi, Ltd. | Apparatus and method for performing heat treatment on semiconductor wafers |
| FR2621930B1 (fr) * | 1987-10-15 | 1990-02-02 | Solems Sa | Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique |
| US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
| US4857689A (en) * | 1988-03-23 | 1989-08-15 | High Temperature Engineering Corporation | Rapid thermal furnace for semiconductor processing |
| DE3941110A1 (de) * | 1988-12-19 | 1990-06-28 | Rif O Z Mikroelektroniki | Vakuumeinrichtung zum aufdampfen von schichten |
| US5059770A (en) * | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
| US5227708A (en) * | 1989-10-20 | 1993-07-13 | Applied Materials, Inc. | Two-axis magnetically coupled robot |
| US5447409A (en) * | 1989-10-20 | 1995-09-05 | Applied Materials, Inc. | Robot assembly |
| DE69032945T2 (de) * | 1989-10-20 | 1999-09-16 | Applied Materials, Inc. | Robotereinrichtung |
| JP2600399B2 (ja) * | 1989-10-23 | 1997-04-16 | 富士電機株式会社 | 半導体ウエーハ処理装置 |
| JP2767144B2 (ja) * | 1989-10-31 | 1998-06-18 | 東京エレクトロン株式会社 | 処理装置 |
| US5060354A (en) * | 1990-07-02 | 1991-10-29 | George Chizinsky | Heated plate rapid thermal processor |
| US5252807A (en) * | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
| JP3416910B2 (ja) * | 1991-04-04 | 2003-06-16 | シーゲイト テクノロジィ リミテッド ライアビリティ カンパニー | スループットの高いスパッタリング装置及び方法 |
| JPH0533128A (ja) * | 1991-07-31 | 1993-02-09 | Nec Corp | スパツタ装置 |
| JP2598353B2 (ja) * | 1991-12-04 | 1997-04-09 | アネルバ株式会社 | 基板処理装置、基板搬送装置及び基板交換方法 |
| JPH05291145A (ja) * | 1992-04-07 | 1993-11-05 | Fuji Electric Co Ltd | 気相成長装置 |
| JP2888026B2 (ja) * | 1992-04-30 | 1999-05-10 | 松下電器産業株式会社 | プラズマｃｖｄ装置 |
| US5516732A (en) * | 1992-12-04 | 1996-05-14 | Sony Corporation | Wafer processing machine vacuum front end method and apparatus |
| US5607009A (en) * | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
| EP0608633B1 (en) * | 1993-01-28 | 1999-03-03 | Applied Materials, Inc. | Method for multilayer CVD processing in a single chamber |
| EP0608620B1 (en) * | 1993-01-28 | 1996-08-14 | Applied Materials, Inc. | Vacuum Processing apparatus having improved throughput |
| US5352294A (en) * | 1993-01-28 | 1994-10-04 | White John M | Alignment of a shadow frame and large flat substrates on a support |
| US5474410A (en) * | 1993-03-14 | 1995-12-12 | Tel-Varian Limited | Multi-chamber system provided with carrier units |
| JPH0718438A (ja) * | 1993-06-17 | 1995-01-20 | Anelva Corp | 静電チャック装置 |
| JP3165938B2 (ja) * | 1993-06-24 | 2001-05-14 | 東京エレクトロン株式会社 | ガス処理装置 |
| US5588827A (en) * | 1993-12-17 | 1996-12-31 | Brooks Automation Inc. | Passive gas substrate thermal conditioning apparatus and method |
| JP3136345B2 (ja) | 1994-08-25 | 2001-02-19 | 富士電子工業株式会社 | 高周波加熱装置 |
| JP3288200B2 (ja) * | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
| JPH0936198A (ja) * | 1995-07-19 | 1997-02-07 | Hitachi Ltd | 真空処理装置およびそれを用いた半導体製造ライン |
| US5716207A (en) * | 1995-07-26 | 1998-02-10 | Hitachi Techno Engineering Co., Ltd. | Heating furnace |
| US5837555A (en) * | 1996-04-12 | 1998-11-17 | Ast Electronik | Apparatus and method for rapid thermal processing |
| JP3373394B2 (ja) * | 1996-06-21 | 2003-02-04 | 株式会社日立国際電気 | 基板処理装置および基板処理方法 |
| US5848889A (en) * | 1996-07-24 | 1998-12-15 | Applied Materials Inc. | Semiconductor wafer support with graded thermal mass |
| US5891251A (en) * | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
| US6602348B1 (en) * | 1996-09-17 | 2003-08-05 | Applied Materials, Inc. | Substrate cooldown chamber |
| US6280183B1 (en) * | 1998-04-01 | 2001-08-28 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
| US6188044B1 (en) * | 1998-04-27 | 2001-02-13 | Cvc Products, Inc. | High-performance energy transfer system and method for thermal processing applications |
-
1998
- 1998-05-20 US US09/082,375 patent/US6086362A/en not_active Expired - Lifetime
-
1999
- 1999-05-20 KR KR1020007013026A patent/KR100554016B1/ko not_active Expired - Fee Related
- 1999-05-20 JP JP2000550137A patent/JP2002516484A/ja active Pending
- 1999-05-20 TW TW088108238A patent/TW495491B/zh not_active IP Right Cessation
- 1999-05-20 WO PCT/IB1999/001140 patent/WO1999060609A2/en not_active Ceased
- 1999-05-20 EP EP99923820A patent/EP1099239A2/en not_active Withdrawn
-
2000
- 2000-02-10 US US09/502,117 patent/US6193507B1/en not_active Expired - Lifetime
- 2000-12-07 US US09/732,159 patent/US6435868B2/en not_active Expired - Fee Related
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2008
- 2008-09-22 JP JP2008243003A patent/JP2009076919A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1099239A2 (en) | 2001-05-16 |
| JP2002516484A (ja) | 2002-06-04 |
| WO1999060609A2 (en) | 1999-11-25 |
| WO1999060609A3 (en) | 2001-03-15 |
| US6086362A (en) | 2000-07-11 |
| KR100554016B1 (ko) | 2006-02-22 |
| US6435868B2 (en) | 2002-08-20 |
| KR20010025061A (ko) | 2001-03-26 |
| JP2009076919A (ja) | 2009-04-09 |
| US20010000747A1 (en) | 2001-05-03 |
| US6193507B1 (en) | 2001-02-27 |
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