US20010000747A1 - Multi-function chamber for a substrate processing system - Google Patents
Multi-function chamber for a substrate processing system Download PDFInfo
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- US20010000747A1 US20010000747A1 US09/732,159 US73215900A US2001000747A1 US 20010000747 A1 US20010000747 A1 US 20010000747A1 US 73215900 A US73215900 A US 73215900A US 2001000747 A1 US2001000747 A1 US 2001000747A1
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- substrate
- cooling
- platen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Definitions
- the present invention relates generally to substrate processing systems, and, in particular, to a multi-function chamber for a substrate processing system.
- Glass substrates are being used for applications such as active matrix television and computer displays, among others.
- Each glass substrate can form multiple display monitors each of which contains more than a million thin film transistors.
- the processing of large glass substrates often involves the performance of multiple sequential steps, including, for example, the performance of chemical vapor deposition (CVD) processes, physical vapor deposition (PVD) processes, or etch processes.
- Systems for processing glass substrates can include one or more process chambers for performing those processes.
- the glass substrates can have dimensions, for example, of 550 mm by 650 mm.
- the trend is toward even larger substrate sizes, such as 650 mm by 830 mm and larger, to allow more displays to be formed on the substrate or to allow larger displays to be produced.
- the larger sizes place even greater demands on the capabilities of the processing systems.
- chamber configurations designed for the processing of relatively small semiconductor wafers are not particularly suited for the processing of these larger glass substrates.
- the chambers must include apertures of sufficient size to permit the large substrates to enter or exit the chamber.
- processing substrates in the process chambers typically must be performed in a vacuum or under low pressure. Movement of glass substrates between processing chambers, thus, requires the use of valve mechanisms which are capable of closing the especially wide apertures to provide vacuum-tight seals and which also must minimize contamination.
- pre-processing or post-processing such as heating or cooling of a substrate
- pre-processing and post-processing functions may be performed in chambers separate from a primary process chamber. Due to the various functions that a particular chamber is designed to perform, each chamber may be configured differently from other chambers. Moreover, once a chamber is designed to perform a particular function, such as pre-process heating of the substrate, it may not be possible to reconfigure the chamber to perform another different function, such as post-process cooling of the substrate. Such designs can limit the flexibility offered by a given chamber.
- an evacuable chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber.
- the chamber is configurable using removable components in at least two of the following configurations: a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures.
- the chamber includes at least one removable volume reducing element.
- the removable volume reducing elements can be made, for example, of plastic, aluminum or other vacuum-compatible material.
- One volume reducing element can be positioned adjacent and below a lid of the chamber.
- Another volume reducing element can be positioned adjacent and above the bottom interior surface of the chamber.
- the chamber When configured in the heating configuration, the chamber includes an upper heating assembly and a heating platen.
- the upper heating assembly can be disposed between a lid of the chamber and a substrate support mechanism.
- the heating platen can be movable to lift a substrate positioned on the support mechanism to a heating position below the upper heating assembly, and to lower the substrate from the heating position onto the support mechanism.
- the heating platen can include inner and outer heating loops whose temperatures are independently controllable. For example, during operation, the temperature of the outer loop can be maintained at a higher temperature than the inner loop.
- the heating platen also can have an upper surface having a pattern of horizontal channels designed to control a contact area between a substrate and the heating platen when the substrate is supported on the upper surface of the platen. For example, the concentration of channels can be greater near the center of the platen than near its perimeter.
- the upper heating assembly can have a stationary plate with inner and outer heating loops whose temperatures can be controlled independently of one another.
- a gas delivery tube can be attached to the chamber, and the stationary plate can include a series of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes.
- the upper heating assembly also can have a diffusion screen disposed between the stationary plate and the substrate heating position.
- the heating configuration also can be used to perform ashing processes.
- the chamber can include a cooling platen and may also include an upper cooling assembly.
- an upper cooling assembly When an upper cooling assembly is employed, it can be disposed between a lid of the chamber and a substrate support mechanism.
- the cooling platen can be movable to lift a substrate positioned on the support mechanism to a cooling position below the upper cooling assembly, and to lower the substrate from the cooling position onto the support mechanism.
- the cooling platen can include multiple cooling tubes through which a cooling fluid can flow.
- the concentration of cooling tubes near the center of the platen can be greater than the concentration near the perimeter.
- the cooling platen can have an upper surface with a pattern of horizontal channels designed to control a contact area between a substrate and the cooling platen when the substrate is supported on the upper surface of the platen.
- the concentration of channels near the perimeter of the cooling platen is greater than near the center.
- the upper cooling assembly also can have a stationary plate with multiple cooling tubes through which a cooling fluid can be provided to flow.
- the concentration of cooling channels is greater near the center of the stationary plate than near the perimeter.
- a gas delivery tube can be attached to the chamber.
- the stationary plate includes a series of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes.
- the upper cooling assembly further can include a diffusion screen disposed between the stationary plate and the substrate cooling position.
- Various of the foregoing features can help compensate for, or take into account, thermal losses near the edges of a large glass substrate and can provide a more uniform temperature across the substrate when the chamber is configured in the cooling configuration.
- Resistive elements can be provided to heat the chamber body and the lid to maintain them within a specified temperature range and to compensate for thermal losses near the substrate edges.
- the resistive elements can be used, for example, when the chamber is configured as a cooling chamber.
- Water cooling can be provided to the chamber body and lid when the chamber is configured as a heating chamber if removal of excess heat is necessary to limit and control temperature.
- a load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber; and a thermally conductive platen for supporting a substrate within the chamber.
- the platen has multiple zones for preferentially changing the temperature of the substrate by conduction so as to compensate for thermal losses near edges of the substrate.
- a method of processing a substrate in a load lock chamber includes supporting the substrate on a substrate support mechanism within the chamber and changing the pressure in the chamber from a first pressure to a second pressure. The method further includes controlling various surface temperatures in the chamber to compensate for, or take into account, thermal losses near edges of the substrate.
- a single load lock chamber can be configured in multiple configurations depending on the requirements of the particular substrate process system.
- the chamber design therefore, facilitates changes in system design because the chamber can be re-configured relatively easily and quickly.
- the various configurations of the chamber allow transitions between first and second pressures, such as atmospheric and process pressures, to be performed quickly.
- Various features also enable a large glass substrate to be cooled or heated quickly, thereby increasing the throughput of the system.
- various features of the chamber design help compensate for thermal losses near the substrate edges to provide a more uniform temperature across substrate.
- Various features also can help maintain the edges of a substrate in compression which can reduce the likelihood of substrate breakage during heating, cooling and other processes.
- the disclosed techniques for distributing a gas throughout the chamber provide improvements over prior techniques, which were not well suited for handling large substrates.
- FIG. 1 is a top plan schematic view of a substrate processing system.
- FIG. 2 is a cross-sectional view of a load lock chamber according to the invention.
- FIG. 3 is a cross-sectional view of the chamber of FIG. 2 configured as a base load lock chamber.
- FIG. 4 is a cross-sectional view of the chamber of FIG. 2 configured as a heating or ashing load lock chamber.
- FIG. 5 is an enlarged partial view of the chamber of FIG. 4.
- FIG. 6 is a top view of a lower heating platen according to one implementation of the invention.
- FIG. 7 is a top view of an upper heating assembly and chamber according to one implementation of the invention.
- FIG. 8 is a top view of an upper heating assembly and chamber according to another implementation of the invention.
- FIG. 9 is a cross-sectional view of the chamber of FIG. 2 configured as a cooling load lock chamber.
- FIG. 10 is an enlarged partial view of the chamber of FIG. 9.
- FIG. 11 is a top view of a lower cooling platen according to one implementation of the invention.
- FIG. 12 is a top view of an upper cooling assembly according to one implementation of the invention.
- a glass substrate processing system may include one or more islands 2 .
- Each island 2 includes a first or input load lock chamber 4 , one or more process chambers 6 , and a second or output load lock chamber 8 .
- the process chamber 6 can be, for example, a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, or an etch chamber.
- Glass substrates which can be on the order of one square meter, are transferred, for example, by a continuous conveyor 10 , to and from the island 2 where one or more process steps can be performed sequentially to the substrate.
- An atmospheric loading robot 12 with an end effector 14 can deliver substrates from the conveyor 10 to the input load lock chamber 4 .
- an atmospheric unloading robot 16 with an end effector 18 can deliver substrates from the output load lock chamber 8 to the conveyor 10 .
- a fresh substrate 20 A is loaded into the load lock chamber 4 by the loading end effector 14
- a processed substrate 20 B is removed from the load lock chamber 8 by the unloading end effector 18 .
- a substrate transfer mechanism (not shown in FIG. 1) can transfer the substrates 20 A, 20 B between the various chambers 4 , 6 and 8 through apertures such as transfer or slit valves 5 , 7 .
- substrate processing performed in the process chamber 6 typically must be done under low pressure, or in a vacuum such as approximately 10 ⁇ 8 Torr.
- the load lock chambers 4 , 8 perform a transition between atmospheric pressure and the pressure in the process chamber 6 .
- the load lock chamber 4 can be pumped down to a low pressure, such as approximately 10 ⁇ 3 Torr, prior to transferring the substrate to the process chamber 6 .
- the load lock chamber 8 can be brought to atmospheric pressure prior to opening the load lock chamber and transferring the substrate to the conveyor 10 .
- an evacuable chamber 30 such as a load lock chamber, includes a temperature controlled chamber body 32 and a temperature controlled lid 34 attached to the chamber body.
- the chamber body 32 and lid 34 can be formed, for example, of aluminum, and can be heated by coupling resistive elements 48 to the outer surfaces of the chamber body and lid.
- the temperature of the resistive elements 48 can be controlled by a computer or other controller 66 .
- An aperture 36 in one of the sidewalls of the chamber body 32 serves as a passageway for transferring a substrate into or out of the load lock chamber 30 .
- the aperture 36 can be used, for example, when a substrate is transferred from the end effector 14 prior to processing or to the end effector 18 after processing.
- a separate opening (not shown) in another one of the chamber sidewalls can be used to transfer the substrate between the load lock chamber 30 and a process chamber, such as the process chamber 6 (FIG. 1).
- a substrate transfer and support mechanism 38 is disposed within the load lock chamber 30 .
- the transfer and support mechanism 38 is used to transfer a substrate into and out of the load lock and can support the substrate within the chamber interior.
- the substrate transfer mechanism is a transfer shuttle, such as the shuttle described in the U.S. patent application referred to above, entitled “Method and Apparatus for Substrate Transfer and Processing.”
- the transfer mechanism 38 is cleaned of particles as the flow of gas in the load lock chamber 30 is directed past the transfer mechanism prior to leaving the chamber through a vacuum port (not shown) in the bottom 40 of the chamber.
- the chamber 30 also includes a gas delivery pipe or tube 42 through which a gas can be delivered to the interior of the chamber 30 . Additionally, the chamber 30 includes an aperture 44 extending through the bottom 40 of the chamber 30 . As described below, thermocouples, heating elements and/or a water line can be provided to the interior of the chamber through the aperture 44 . In some implementations, the aperture 44 is closed or sealed.
- the load lock chamber 30 can be configured in at least the following configurations: a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, or a cooling configuration for cooling the substrate and providing a transition between two different pressures.
- the load lock chamber 30 also can be configured in an ashing configuration.
- the chamber 30 can be configured in at least two of the foregoing configurations.
- the load lock chamber 30 can be re-configured relatively easily from one configuration to another configuration.
- the chamber 30 can be configured as a base load lock chamber 30 A (FIG. 3) which can be used, for example, for transitions between first and second pressures, such as atmospheric pressure and a processing pressure.
- first and second pressures such as atmospheric pressure and a processing pressure.
- one or more removable volume reducing elements 50 A, 50 B are added to the interior of the chamber 30 A.
- an upper volume reducing element 50 A is disposed adjacent and below the lid 34 and a lower volume reducing element 50 B is disposed adjacent and above a bottom interior surface of the chamber.
- the mechanism 38 which supports the substrate is positioned between the upper and lower volume reducing elements 50 A, 50 B.
- the volume reducing elements 50 A, 50 B can be rectangular-shaped and can be formed, for example, of a plastic material such as LEXAN or aluminum.
- the volume reducing elements 50 A, 50 B are designed to be as large as possible without interfering with the operation of the transfer mechanism 38 or the end effectors 14 , 18 of the robots 12 , 16 (FIG. 1) when the substrate is transferred from one position to another.
- the upper volume reducing element 50 A can be attached to the chamber lid 34 , for example, with screws, bolts or pins.
- the lower volume reducing element SOB can rest on the chamber floor.
- volume reducing elements 50 A, 50 B are used as an input load lock chamber, the pressure in the chamber can be pumped down to the processing pressure more quickly, thereby increasing the throughput of the system. Similarly, when the chamber 30 A is used as an output load lock chamber, the pressure in the chamber can be brought back to atmospheric pressure more quickly. Furthermore, when the chamber 30 A is used as an output load lock chamber, an inert gas such as nitrogen or argon, is provided to the chamber interior, via the gas delivery tube 42 , to provide the transition to atmospheric pressure.
- the upper volume reducing element 50 A can include one or more vertical channels 52 that allow the gas to be provided to an interior region of the chamber.
- the upper surface of the volume reducing element 50 A also can include horizontal channels (not shown) that allow the gas to flow from the delivery tube 42 to the vertical channels 52 .
- substrates are maintained at temperatures of less than approximately 100°C.
- the base configuration is suitable, for example, as either the input or output load lock chamber in such etch systems.
- the chamber 30 can also be configured as a heating load lock chamber 30 B (FIGS. 4-7).
- the volume reducing elements 50 A, 50 B are removed, and are replaced by a removable upper heating assembly 56 and a removable lower heating platen 54 , respectively.
- the upper heating assembly 56 which is described in greater detail below, can be attached to the chamber lid 34 , for example, by shoulder screws, clamps, or bolts.
- the lower heating platen 54 is a vertically movable temperature controlled hot plate, which can be formed, for example, from stainless steel. When a substrate is placed on the lower platen 54 , the lower platen conducts heat directly into the substrate.
- the lower platen 54 includes an inner heating loop 58 A and an outer heating loop 58 B, each of which has one or more heating elements, such as coils.
- the heating elements for the inner and outer loops 58 A, 58 B can be coupled to the controller 66 by connections 62 through a tube 46 which extend through the aperture 44 and which is welded to the lower platen 54 .
- Thermocouples for measuring the temperature of the lower platen 54 also can be connected from the platen 54 to the controller 66 by connections 64 through the tube 46 .
- the tube 46 can be surrounded by a bellows (not shown) to provide a vacuum seal within the chamber when the platen 54 moves vertically.
- the temperature of the inner and outer heating loops 58 A, 58 B can be controlled independently.
- the independent temperature control allows the surface of the platen 54 near its perimeter to be maintained at a different temperature from the surface of the platen near its center.
- the temperature of the outer loop 58 B is maintained at a higher temperature than the inner loop 58 A.
- Such a temperature difference helps compensate for the heat loss in the substrate near its edges and helps reduce the possibility of substrate breakage due to cracks propagating through the substrate as a result of edge defects. Rapid heating of substrates is, therefore, facilitated.
- the upper surface of the lower platen 54 includes a pattern of one or more horizontal grooves or channels 60 (FIGS. 5-6).
- two sets of channels 60 are formed across the surface of the lower platen 54 with one set of channels formed radially and the other set formed circularly.
- the channels 60 have a width of about 6 mm and a depth of about 1 mm. Other dimensions may be suitable for particular applications.
- the spacing between adjacent channels, or the concentration of the channels is designed to control the contact area between a substrate and the platen 54 and provides further control of the temperature gradient across the substrate. For example, in one implementation, fewer channels 60 per unit area are provided near the perimeter of the platen 54 compared to the number of channels near the center of the platen.
- Such a pattern increases the contact area between the platen and a surface of the substrate near the substrate edges compared to the contact area between the platen and a surface of the substrate near the substrate center. Therefore, the pattern of channels 60 also can help compensate for thermal losses near the edges of the substrate to provide a more uniform temperature profile across the substrate.
- an external robot such as the robot 12 (FIG. 1), loads a substrate into the heating load lock chamber 30 B and places the substrate onto the transfer mechanism 38 .
- the lower heating platen 54 is raised and lifts the substrate off the transfer mechanism 38 .
- the platen 54 continues rising until the substrate is brought to a heating position.
- the heating position should be as close as possible to the position in which the thermal losses from the edges of the substrate to the cooler walls of the chamber body 32 are minimized.
- the substrate can be lifted to within several millimeters of the upper heating assembly 56 so that the viewing angle of the substrate edge with respect to the chamber walls is reduced as much as possible.
- cooling water tubes with an appropriate degree of thermal contact to the outer walls of the chamber help maintain the temperature of the chamber walls within a desired range and prevent the walls from becoming too hot.
- the cooling tubes may be joined to a plate which is affixed to the chamber walls.
- the temperature of the chamber walls is maintained at approximately 100°C.
- thermal barriers can be provided along the outside walls of the chamber to protect workers or others from touching the hot chamber surfaces.
- the upper heating assembly 56 includes a stationary plate 68 , which can be made of stainless steel and which includes an inner heating loop 69 A and an outer heating loop 69 B, each of which has one or more heating elements, such as coils.
- the temperature of the loops 69 A, 69 B can be controlled so as to obtain a more uniform temperature across the substrate.
- Thermocouples can be attached to the plate 68 for measuring its temperature.
- the thermocouples and heating elements can be coupled to the controller 66 by connections 70 and 72 , respectively.
- the stationary plate 68 further includes a series of vertical holes 78 (FIG. 7) which are formed through the plate 68 .
- a series of vertical holes 78 (FIG. 7) which are formed through the plate 68 .
- an outer zone 78 A of holes 78 and an inner zone 78 B of holes are formed through the plate 68 .
- the heating assembly 56 also includes a diffusion screen 74 (FIG. 5) which can comprise one or more fine mesh screens or filters with multiple holes.
- the diffusion screen 74 is mounted to the stationary plate 68 , for example, by a clamp 76 .
- the upper heating assembly 56 heats the substrate primarily by conduction and radiation.
- an upper heater assembly which has zones of various emissivities on the surface facing the substrate can be used to facilitate the substrate heating rate, and thermal uniformity can be controlled.
- An inert gas such as nitrogen or argon, can be introduced from a gas source 100 A via the delivery tube 42 to the back-side or upper surface 80 of the plate 68 to facilitate the heating process further.
- the gas flows along the upper surface 80 of the plate 68 toward the holes 78 .
- the gas, which is heated as it flows along the upper surface 80 then can pass through the holes 78 to the front-side or lower surface of the plate 68 .
- the amount of gas flow exiting from the inner and outer zones 78 A, 78 B relative to one another into the chamber can be changed by varying the size or the number of holes 78 in the stationary plate 68 , as well as by varying the gas pressure in the zones.
- the diffusion screen 74 directs the gas onto the substrate surface facing the heating assembly 56 .
- the diffusion screen 74 can restrict the flow of the gas to limit disturbances that otherwise may be caused as the gas flows onto the substrate.
- the diffusion screen 74 also can bias the heat transfer to the substrate to improve the uniformity of the substrate temperature. For example, the diffusion screen 74 preferentially can introduce more (or less) gas near the outer portions of the chamber to provide a more uniform temperature across the substrate. If a diffusion screen is not used, the gas flows directly on to the substrate.
- FIGS. 4-7 can be used, for example, as an input load lock chamber in which a substrate is heated prior to being transferred to a process chamber. Such pre-process heating may be required or desirable, for example, in CVD and PVD systems, as well as other substrate processing systems.
- the load lock chamber 30 B is used as an input chamber to heat the substrate prior to its transfer to a process chamber, the amount and extent of gas flow from the delivery tube 42 may need to be regulated or limited to allow the chamber 30 B to be pumped down to a vacuum or some other process pressure.
- the platen 54 is lowered, allowing the substrate to be transferred back to the transfer mechanism 38 .
- the substrate then can be transferred by the transfer mechanism 38 , for example, to the process chamber 6 .
- the chamber 30 B also can be used as an ash load lock chamber.
- the inert gas source 100 is replaced by an ash gas source 100 B (FIG. 8).
- Such a configuration can be used, for example, as an output load lock chamber where, in addition to providing a transition to atmospheric pressure, a post-process ash takes place.
- the chamber 30 B can be used as an ash load lock to ash a photoresist layer on a substrate that is received from a primary process chamber, such as the chamber 6 (FIG. 1).
- the chamber 30 B is configured as an ash load lock chamber
- the chamber is typically heated to a lower temperature than when the chamber is used as an input heating load lock.
- the controller 66 heats the chamber 30 B to approximately 150 °C., and an ash gas, such as oxygen (O 2 ) or carbon tetra fluoride (CF 4 ), is provided to the chamber interior via the delivery tube 42 .
- an ash gas such as oxygen (O 2 ) or carbon tetra fluoride (CF 4 )
- the load lock is pumped, purged and vented to atmospheric pressure.
- the substrate then can be transferred, for example, by the robot 16 to the conveyor 10 .
- the chamber 30 also can be configured as a cooling load lock chamber 30 C (FIGS. 9-12).
- the cooling configuration 30 C includes a removable upper cooling assembly 86 and a removable lower cooling platen 84 .
- the upper cooling assembly 86 which is described in greater detail below, can be attached to the chamber lid 34 , for example, by shoulder screws, clamps or bolts.
- the lower cooling platen 84 is a vertically movable temperature controlled cooling plate, which can be formed, for example, from stainless steel or aluminum.
- the lower platen conducts heat directly from the substrate, thereby cooling the substrate.
- the lower platen may have sufficient heat loss to the chamber to allow continuous operation without the need to be actively cooled, for example, by running water through it.
- the lower platen 84 includes multiple cooling tubes 92 through which a cooling fluid, such as water, can flow. The water can be provided to the cooling tubes 92 through a stainless steel water line 82 which extends through the aperture 44 and which is welded to the lower platen 84 .
- the controller 66 can control the flow of water through the water line 82 to the tubes 92 .
- the water line 82 can be surrounded by a bellows (not shown) to maintain the pressure within the chamber when the platen 84 moves vertically as described below.
- the position and concentration of the cooling tubes 92 is selected to obtain a more uniform temperature profile across the substrate by taking into account or compensating for thermal losses near the edges of the substrate.
- the concentration of cooling tubes 92 near the center of the platen 84 can be greater than the concentration near its perimeter.
- Such a configuration can provide a more uniform temperature profile throughout the substrate, can help reduce the likelihood of substrate breakage, and can facilitate the rapid cooling of the substrate in the load lock chamber 30 C.
- the upper surface of the lower platen 84 includes a pattern of one or more horizontal grooves or channels 90 (FIGS. 10-11).
- twosets of channels 90 are formed across the surface of the lower platen 84 with one set of channels formed substantially perpendicular to the other set.
- the channels 90 have a width of about 6 mm and a depth of about 1 mm. Other dimensions may be suitable for particular applications.
- the spacing between the channels 90 , or the concentration of the channels, is designed to control the contact area between a substrate and the platen 84 and provides further control of the temperature gradient across the substrate.
- more channels 90 per unit area are provided near the perimeter of the platen 84 compared to the number of channels per unit area near the center of the platen.
- Such a pattern increases the contact area between the platen 84 and a first surface of the substrate near its center compared to the contact area between the platen and a second surface of the substrate near its perimeter where the first and second areas are the same size.
- the pattern of channels 90 on the platen 84 can be designed to take into account or compensate for thermal losses near the edges of the substrate so as to provide a more uniform temperature profile throughout the substrate.
- a substrate is loaded from a process chamber, such as the chamber 6 (FIG. 1), onto the transfer mechanism 38 in the cooling load lock chamber 30 C.
- the lower cooling platen 84 is raised and lifts the substrate off the transfer mechanism 38 .
- the platen 84 continues rising until the substrate is brought to a cooling position.
- the substrate can be lifted, for example, to within several millimeters of the upper cooling assembly 86 so that the viewing angle of the substrate edge with respect to the chamber walls is reduced as much as possible when the substrate is in its cooling position.
- the upper cooling assembly 86 includes a stationary plate 98 , which can be made of stainless steel or aluminum and which includes multiple cooling tubes 102 through which a cooling fluid, such as water, can flow.
- the configuration of the cooling tubes 102 also is designed to provide a more uniform temperature throughout the substrate by taking into account or compensating for thermal losses near the edges of the substrate.
- the concentration of the cooling channels is greater near the center of the plate 98 than near its perimeter.
- the stationary plate 98 further includes a series of vertical holes 108 (FIG. 12) which are formed through the plate 98 .
- a series of vertical holes 108 (FIG. 12) which are formed through the plate 98 .
- an outer zone 108 A of holes 108 and an inner zone 108 B of holes 108 are formed through the plate 98 .
- the upper cooling assembly 86 also includes a diffusion screen 104 (FIG. 10) which can comprise one or more fine mesh screens or filters having multiple holes.
- the diffusion screen 104 preferentially can introduce more (or less) gas near the center of the chamber relative to other parts of the chamber.
- the diffusion screen 104 is mounted to the stationary plate 98 , for example, by a clamp 106 .
- the upper cooling assembly 86 helps cool the substrate primarily by forced convection and radiation processes. Zones of various emissivities on the surface of the upper cooling assembly facing the substrate also can be used to facilitate the cooling process and tailor thermal uniformity.
- An inert gas such as nitrogen or argon, can be introduced from a gas source 100 C via the delivery tube 42 to the back-side or upper surface 110 of the plate 98 to facilitate the cooling process further. The gas flows along the upper surface 110 of the plate 98 toward the holes 108 . The gas, which is cooled as it flows along the upper surface 110 , then can pass through the holes 108 to the front-side or lower surface of the plate 98 .
- the amount of gas flow exiting from the inner and outer zones 108 A, 108 B relative to one another into the chamber can be changed by varying the size or the number of holes 108 in the stationary plate 98 , as well as by varying the gas pressure in the zones. Water-cooling the stationary plate may not always be required. When it is not, the stationary plate acts to distribute the gas flow to the back or upper side of the diffusion screen 104 .
- the diffusion screen 104 directs the gas onto the substrate surface facing the upper cooling assembly 86 .
- the diffusion screen 104 can restrict and distribute the flow of the gas to limit turbulence and eddy flows that otherwise may be present as the gas flows onto the substrate.
- the diffusion screen 104 also can control the flow of gas to help bias heat transfer from the substrate.
- the diffusion screen can be designed, for example, so that the flow of the gas results in a more uniform temperature profile across the substrate.
- the chamber body 32 and lid 34 When configured as a cooling load lock chamber, the chamber body 32 and lid 34 also can be heated using the resistive elements 48 to maintain their temperature within a specified range above the cooling water temperature.
- the temperature of the chamber walls is maintained at approximately 100°C. Heating the walls of the chamber body 32 during a cooling process can provide several advantages. First, such heating can compensate for the thermal losses near the substrate edges, thereby providing a more uniform temperature profile across the substrate as it cools. Furthermore, such heating can help reduce adsorption of water vapor on the chamber walls while the chamber is open during substrate removal. Reducing the amount of water vapor can prevent the water vapor from combining with residual by-products from the process chamber 6 , such as chlorine gas (Cl 2 ).
- Preventing the combination of water vapor and such residual by-products is important because the combination of such chemicals can cause corrosion of the chamber 30 C. Additionally, when the cooling load lock is arranged adjacent a process chamber in which heating of the walls is desirable or necessary, the hot surfaces of the chamber body also prevent the cooling load lock from acting as a heat sink and drawing heat from the process chamber.
- FIGS. 9-12 can be used, for example, as an output load lock chamber in which a substrate is cooled and the chamber is returned to atmospheric pressure prior to being transferred to the conveyor 10 (FIG. 1).
- Such post-process cooling may be required or desirable, for example, in CVD or PVD systems where processing temperatures may reach 200-450°C.
- an inert gas such as nitrogen or argon can be provided to the chamber 30 C from the delivery tube 42 .
- the channels 90 in the upper surface of the lower cooling platen 84 and holes through the platen allow gas to reach the backside of the substrate which facilitates separating the substrate from the platen.
- the substrate then can be transferred to the transfer mechanism 38 and to the conveyor 10 (FIG. 1).
- control system is shown as a single controller 66 , the control system can include multiple dedicated controllers to control such features as the movement of the lower platens 54 , 84 , as well as the temperature of the lower platens, the temperature of the upper assemblies 56 , 86 , the temperature of the chamber body 32 and chamber lid 34 , the flow of a cooling fluid through the line 82 , and the flow of gas through the gas tube 42 .
- a single load lock chamber 30 (FIG. 1) can be configured in multiple configurations depending on the requirements of the particular substrate process system.
- the chamber design therefore, facilitates changes in system design because the chamber 30 can be reconfigured relatively easily and quickly.
- the various configurations of the chamber 30 allow transitions between first and second pressures, such as atmospheric and process pressures, to be performed quickly.
- Various features of the load lock chamber can provide a more uniform temperature across a substrate as it is heated or cooled. Although it is desirable to obtain a perfectly uniform temperature across the substrate, it is difficult, if not impossible, to achieve such perfect uniformity in practice. Accordingly, various features of the load lock are designed to ensure that portions of the substrate near its edges are maintained at a temperature at least as high as the temperatures in other portions of the substrate. Such features result in a slight compressive force to the edges of the substrate and help reduce the likelihood of substrate breakage in the chamber. The various configurations also enable a substrate to be cooled or heated quickly, thereby increasing the throughput of the system.
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Abstract
A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.
Description
- The present application is related to co-pending U.S. patent application Ser. No. 08/946,922, filed Oct. 8, 1997 and entitled “Modular On-Line Processing System,” as well as the following U.S. patent applications which are being filed concurrently with this application: (1) “Method and Apparatus for Substrate Transfer and Processing” [attorney docket 2519/US/AKT (05542/235001)]; (2) “Isolation Valves,” [attorney docket 2157/US/AKT (05542/226001)]; (3) “An Automated Substrate Processing System,” [attorney docket 2429/US/AKT (05542/245001)]; (4) “Substrate Transfer Shuttle Having a Magnetic Drive,” [attorney docket 2638/US/AKT (05542/264001)]; (5) “Substrate Transfer Shuttle,” [attorney docket 2688/US/AKT (05542/265001)]; (6) “In-Situ Substrate Transfer Shuttle,” [attorney docket 2703/US/AKT (05542/266001)]; and (7) “Modular Substrate Processing System,” [attorney docket 2311/US/AKT (05542/233001)].
- The foregoing patent applications, which are assigned to the assignee of the present application, are incorporated herein by reference in their entirety.
- The present invention relates generally to substrate processing systems, and, in particular, to a multi-function chamber for a substrate processing system.
- Glass substrates are being used for applications such as active matrix television and computer displays, among others. Each glass substrate can form multiple display monitors each of which contains more than a million thin film transistors.
- The processing of large glass substrates often involves the performance of multiple sequential steps, including, for example, the performance of chemical vapor deposition (CVD) processes, physical vapor deposition (PVD) processes, or etch processes. Systems for processing glass substrates can include one or more process chambers for performing those processes.
- The glass substrates can have dimensions, for example, of 550 mm by 650 mm. The trend is toward even larger substrate sizes, such as 650 mm by 830 mm and larger, to allow more displays to be formed on the substrate or to allow larger displays to be produced. The larger sizes place even greater demands on the capabilities of the processing systems.
- Some of the basic processing techniques for depositing thin films on the large glass substrates are generally similar to those used, for example, in the processing of semiconductor wafers. Despite some of the similarities, however, a number of difficulties have been encountered in the processing of large glass substrates that cannot be overcome in a practical way and cost effectively by using techniques currently employed for semiconductor wafers and smaller glass substrates.
- For example, efficient production line processing requires rapid movement of the glass substrates from one work station to another, and between vacuum environments and atmospheric environments. The large size and shape of the glass substrates makes it difficult to transfer them from one position in the processing system to another. As a result, cluster tools suitable for vacuum processing of semiconductor wafers and smaller glass substrates, such as substrates up to 550 mm by 650 mm, are not well suited for the similar processing of larger glass substrates, such as 650 mm by 830 mm and above. Moreover, cluster tools require a relatively large floor space.
- Similarly, chamber configurations designed for the processing of relatively small semiconductor wafers are not particularly suited for the processing of these larger glass substrates. The chambers must include apertures of sufficient size to permit the large substrates to enter or exit the chamber. Moreover, processing substrates in the process chambers typically must be performed in a vacuum or under low pressure. Movement of glass substrates between processing chambers, thus, requires the use of valve mechanisms which are capable of closing the especially wide apertures to provide vacuum-tight seals and which also must minimize contamination.
- Furthermore, relatively few defects can cause an entire monitor formed on the substrate to be rejected. Therefore, reducing the occurrence of defects in the glass substrate when it is transferred from one position to another is critical. Similarly, misalignment of the substrate as it is transferred and positioned within the processing system can cause the process uniformity to be compromised to the extent that one edge of the glass substrate is electrically non-functional once the glass has been formed into a display. If the misalignment is severe enough, it even may cause the substrate to strike structures and break inside the vacuum chamber.
- Other problems associated with the processing of large glass substrates arise due to their unique thermal properties. For example, the relatively low thermal conductivity of glass makes it more difficult to heat or cool the substrate uniformly. In particular, thermal losses near the edges of any large-area, thin substrate tend to be greater than near the center of the substrate, resulting in a non-uniform temperature gradient across the substrate. The thermal properties of the glass substrate combined with its size, therefore, makes it more difficult to obtain uniform characteristics for the electronic components formed on different portions of the surface of a processed substrate. Moreover, heating or cooling the substrates quickly and uniformly is more difficult as a consequence of its poor thermal conductivity, thereby reducing the ability of the system to achieve a high throughput.
- Depending on the functions or processes to be performed within a particular process chamber, pre-processing or post-processing, such as heating or cooling of a substrate, may be required. Such pre-processing and post-processing functions may be performed in chambers separate from a primary process chamber. Due to the various functions that a particular chamber is designed to perform, each chamber may be configured differently from other chambers. Moreover, once a chamber is designed to perform a particular function, such as pre-process heating of the substrate, it may not be possible to reconfigure the chamber to perform another different function, such as post-process cooling of the substrate. Such designs can limit the flexibility offered by a given chamber.
- In general, according to one aspect, an evacuable chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The chamber is configurable using removable components in at least two of the following configurations: a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures.
- When the chamber is configured in the base configuration, the chamber includes at least one removable volume reducing element. The removable volume reducing elements can be made, for example, of plastic, aluminum or other vacuum-compatible material. One volume reducing element can be positioned adjacent and below a lid of the chamber. Another volume reducing element can be positioned adjacent and above the bottom interior surface of the chamber.
- When configured in the heating configuration, the chamber includes an upper heating assembly and a heating platen. The upper heating assembly can be disposed between a lid of the chamber and a substrate support mechanism. The heating platen can be movable to lift a substrate positioned on the support mechanism to a heating position below the upper heating assembly, and to lower the substrate from the heating position onto the support mechanism.
- The heating platen can include inner and outer heating loops whose temperatures are independently controllable. For example, during operation, the temperature of the outer loop can be maintained at a higher temperature than the inner loop. The heating platen also can have an upper surface having a pattern of horizontal channels designed to control a contact area between a substrate and the heating platen when the substrate is supported on the upper surface of the platen. For example, the concentration of channels can be greater near the center of the platen than near its perimeter.
- The upper heating assembly can have a stationary plate with inner and outer heating loops whose temperatures can be controlled independently of one another. A gas delivery tube can be attached to the chamber, and the stationary plate can include a series of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes. The upper heating assembly also can have a diffusion screen disposed between the stationary plate and the substrate heating position.
- Various of the foregoing features can help compensate for thermal losses near the edges of a large glass substrate and can provide a more uniform temperature across the substrate when the chamber is configured in the heating configuration.
- The heating configuration also can be used to perform ashing processes.
- When configured in the cooling configuration, the chamber can include a cooling platen and may also include an upper cooling assembly. When an upper cooling assembly is employed, it can be disposed between a lid of the chamber and a substrate support mechanism. The cooling platen can be movable to lift a substrate positioned on the support mechanism to a cooling position below the upper cooling assembly, and to lower the substrate from the cooling position onto the support mechanism.
- The cooling platen can include multiple cooling tubes through which a cooling fluid can flow. In one implementation, the concentration of cooling tubes near the center of the platen can be greater than the concentration near the perimeter. The cooling platen can have an upper surface with a pattern of horizontal channels designed to control a contact area between a substrate and the cooling platen when the substrate is supported on the upper surface of the platen. In one implementation, the concentration of channels near the perimeter of the cooling platen is greater than near the center.
- The upper cooling assembly also can have a stationary plate with multiple cooling tubes through which a cooling fluid can be provided to flow. In some implementations, the concentration of cooling channels is greater near the center of the stationary plate than near the perimeter. A gas delivery tube can be attached to the chamber. The stationary plate includes a series of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes. The upper cooling assembly further can include a diffusion screen disposed between the stationary plate and the substrate cooling position.
- Various of the foregoing features can help compensate for, or take into account, thermal losses near the edges of a large glass substrate and can provide a more uniform temperature across the substrate when the chamber is configured in the cooling configuration.
- Resistive elements can be provided to heat the chamber body and the lid to maintain them within a specified temperature range and to compensate for thermal losses near the substrate edges. The resistive elements can be used, for example, when the chamber is configured as a cooling chamber.
- Water cooling can be provided to the chamber body and lid when the chamber is configured as a heating chamber if removal of excess heat is necessary to limit and control temperature.
- In yet a further aspect, a load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber; and a thermally conductive platen for supporting a substrate within the chamber. The platen has multiple zones for preferentially changing the temperature of the substrate by conduction so as to compensate for thermal losses near edges of the substrate.
- In addition, a method of processing a substrate in a load lock chamber includes supporting the substrate on a substrate support mechanism within the chamber and changing the pressure in the chamber from a first pressure to a second pressure. The method further includes controlling various surface temperatures in the chamber to compensate for, or take into account, thermal losses near edges of the substrate.
- Various implementations include one or more of the following advantages. A single load lock chamber can be configured in multiple configurations depending on the requirements of the particular substrate process system. The chamber design, therefore, facilitates changes in system design because the chamber can be re-configured relatively easily and quickly. Furthermore, the various configurations of the chamber allow transitions between first and second pressures, such as atmospheric and process pressures, to be performed quickly.
- Various features also enable a large glass substrate to be cooled or heated quickly, thereby increasing the throughput of the system. Depending on the particular configuration used, various features of the chamber design help compensate for thermal losses near the substrate edges to provide a more uniform temperature across substrate. Various features also can help maintain the edges of a substrate in compression which can reduce the likelihood of substrate breakage during heating, cooling and other processes.
- Additionally, the disclosed techniques for distributing a gas throughout the chamber provide improvements over prior techniques, which were not well suited for handling large substrates.
- Other features and advantages will be apparent from the following detailed description, drawings and claims.
- FIG. 1 is a top plan schematic view of a substrate processing system.
- FIG. 2 is a cross-sectional view of a load lock chamber according to the invention.
- FIG. 3 is a cross-sectional view of the chamber of FIG. 2 configured as a base load lock chamber.
- FIG. 4 is a cross-sectional view of the chamber of FIG. 2 configured as a heating or ashing load lock chamber.
- FIG. 5 is an enlarged partial view of the chamber of FIG. 4.
- FIG. 6 is a top view of a lower heating platen according to one implementation of the invention.
- FIG. 7 is a top view of an upper heating assembly and chamber according to one implementation of the invention.
- FIG. 8 is a top view of an upper heating assembly and chamber according to another implementation of the invention.
- FIG. 9 is a cross-sectional view of the chamber of FIG. 2 configured as a cooling load lock chamber.
- FIG. 10 is an enlarged partial view of the chamber of FIG. 9.
- FIG. 11 is a top view of a lower cooling platen according to one implementation of the invention.
- FIG. 12 is a top view of an upper cooling assembly according to one implementation of the invention.
- As shown in FIG. 1, a glass substrate processing system may include one or more islands2. Each island 2 includes a first or input
load lock chamber 4, one or more process chambers 6, and a second or outputload lock chamber 8. In various implementations, the process chamber 6 can be, for example, a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, or an etch chamber. - Glass substrates, which can be on the order of one square meter, are transferred, for example, by a
continuous conveyor 10, to and from the island 2 where one or more process steps can be performed sequentially to the substrate. An atmospheric loading robot 12 with anend effector 14 can deliver substrates from theconveyor 10 to the inputload lock chamber 4. Similarly, anatmospheric unloading robot 16 with anend effector 18 can deliver substrates from the outputload lock chamber 8 to theconveyor 10. As illustrated in FIG. 1, a fresh substrate 20A is loaded into theload lock chamber 4 by theloading end effector 14, and a processedsubstrate 20B is removed from theload lock chamber 8 by the unloadingend effector 18. A substrate transfer mechanism (not shown in FIG. 1) can transfer thesubstrates 20A, 20B between thevarious chambers - In general, substrate processing performed in the process chamber6 typically must be done under low pressure, or in a vacuum such as approximately 10−8 Torr. Thus, the
load lock chambers load lock chamber 4 can be pumped down to a low pressure, such as approximately 10−3 Torr, prior to transferring the substrate to the process chamber 6. Similarly, after the substrate is transferred from the process chamber 6 to theload lock chamber 8, theload lock chamber 8 can be brought to atmospheric pressure prior to opening the load lock chamber and transferring the substrate to theconveyor 10. - Referring to FIG. 2, an
evacuable chamber 30, such as a load lock chamber, includes a temperature controlledchamber body 32 and a temperature controlledlid 34 attached to the chamber body. Thechamber body 32 andlid 34 can be formed, for example, of aluminum, and can be heated by couplingresistive elements 48 to the outer surfaces of the chamber body and lid. The temperature of theresistive elements 48 can be controlled by a computer orother controller 66. Anaperture 36 in one of the sidewalls of thechamber body 32 serves as a passageway for transferring a substrate into or out of theload lock chamber 30. Theaperture 36 can be used, for example, when a substrate is transferred from theend effector 14 prior to processing or to theend effector 18 after processing. A separate opening (not shown) in another one of the chamber sidewalls can be used to transfer the substrate between theload lock chamber 30 and a process chamber, such as the process chamber 6 (FIG. 1). - A substrate transfer and
support mechanism 38 is disposed within theload lock chamber 30. The transfer andsupport mechanism 38 is used to transfer a substrate into and out of the load lock and can support the substrate within the chamber interior. In one implementation, the substrate transfer mechanism is a transfer shuttle, such as the shuttle described in the U.S. patent application referred to above, entitled “Method and Apparatus for Substrate Transfer and Processing.” During the transition from atmospheric pressure to vacuum or some other processing pressure, thetransfer mechanism 38 is cleaned of particles as the flow of gas in theload lock chamber 30 is directed past the transfer mechanism prior to leaving the chamber through a vacuum port (not shown) in the bottom 40 of the chamber. - The
chamber 30 also includes a gas delivery pipe ortube 42 through which a gas can be delivered to the interior of thechamber 30. Additionally, thechamber 30 includes anaperture 44 extending through the bottom 40 of thechamber 30. As described below, thermocouples, heating elements and/or a water line can be provided to the interior of the chamber through theaperture 44. In some implementations, theaperture 44 is closed or sealed. - As described in greater detail below, the
load lock chamber 30 can be configured in at least the following configurations: a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, or a cooling configuration for cooling the substrate and providing a transition between two different pressures. Theload lock chamber 30 also can be configured in an ashing configuration. In general, thechamber 30 can be configured in at least two of the foregoing configurations. Furthermore, theload lock chamber 30 can be re-configured relatively easily from one configuration to another configuration. - The
chamber 30 can be configured as a baseload lock chamber 30A (FIG. 3) which can be used, for example, for transitions between first and second pressures, such as atmospheric pressure and a processing pressure. In the base configuration, one or more removablevolume reducing elements 50A, 50B are added to the interior of thechamber 30A. In the illustrated implementation, an uppervolume reducing element 50A is disposed adjacent and below thelid 34 and a lower volume reducing element 50B is disposed adjacent and above a bottom interior surface of the chamber. Themechanism 38 which supports the substrate is positioned between the upper and lowervolume reducing elements 50A, 50B. In one implementation, thevolume reducing elements 50A, 50B can be rectangular-shaped and can be formed, for example, of a plastic material such as LEXAN or aluminum. In general, thevolume reducing elements 50A, 50B are designed to be as large as possible without interfering with the operation of thetransfer mechanism 38 or theend effectors volume reducing element 50A can be attached to thechamber lid 34, for example, with screws, bolts or pins. The lower volume reducing element SOB can rest on the chamber floor. - One advantage of using the
volume reducing elements 50A, 50B is that when thechamber 30A is used as an input load lock chamber, the pressure in the chamber can be pumped down to the processing pressure more quickly, thereby increasing the throughput of the system. Similarly, when thechamber 30A is used as an output load lock chamber, the pressure in the chamber can be brought back to atmospheric pressure more quickly. Furthermore, when thechamber 30A is used as an output load lock chamber, an inert gas such as nitrogen or argon, is provided to the chamber interior, via thegas delivery tube 42, to provide the transition to atmospheric pressure. For this purpose, the uppervolume reducing element 50A can include one or morevertical channels 52 that allow the gas to be provided to an interior region of the chamber. The upper surface of thevolume reducing element 50A also can include horizontal channels (not shown) that allow the gas to flow from thedelivery tube 42 to thevertical channels 52. - In some etch systems, substrates are maintained at temperatures of less than approximately 100°C. The base configuration is suitable, for example, as either the input or output load lock chamber in such etch systems.
- The chamber30 (FIG. 2) can also be configured as a heating
load lock chamber 30B (FIGS. 4-7). In the heating configuration, thevolume reducing elements 50A, 50B are removed, and are replaced by a removableupper heating assembly 56 and a removablelower heating platen 54, respectively. Theupper heating assembly 56, which is described in greater detail below, can be attached to thechamber lid 34, for example, by shoulder screws, clamps, or bolts. - The
lower heating platen 54 is a vertically movable temperature controlled hot plate, which can be formed, for example, from stainless steel. When a substrate is placed on thelower platen 54, the lower platen conducts heat directly into the substrate. Thelower platen 54 includes aninner heating loop 58A and anouter heating loop 58B, each of which has one or more heating elements, such as coils. The heating elements for the inner andouter loops controller 66 byconnections 62 through atube 46 which extend through theaperture 44 and which is welded to thelower platen 54. Thermocouples for measuring the temperature of thelower platen 54 also can be connected from theplaten 54 to thecontroller 66 by connections 64 through thetube 46. Thetube 46 can be surrounded by a bellows (not shown) to provide a vacuum seal within the chamber when theplaten 54 moves vertically. - The temperature of the inner and
outer heating loops platen 54 near its perimeter to be maintained at a different temperature from the surface of the platen near its center. In one implementation, the temperature of theouter loop 58B is maintained at a higher temperature than theinner loop 58A. Such a temperature difference helps compensate for the heat loss in the substrate near its edges and helps reduce the possibility of substrate breakage due to cracks propagating through the substrate as a result of edge defects. Rapid heating of substrates is, therefore, facilitated. - The upper surface of the
lower platen 54 includes a pattern of one or more horizontal grooves or channels 60 (FIGS. 5-6). In one implementation, two sets ofchannels 60 are formed across the surface of thelower platen 54 with one set of channels formed radially and the other set formed circularly. In the illustrated implementation, thechannels 60 have a width of about 6 mm and a depth of about 1 mm. Other dimensions may be suitable for particular applications. The spacing between adjacent channels, or the concentration of the channels, is designed to control the contact area between a substrate and theplaten 54 and provides further control of the temperature gradient across the substrate. For example, in one implementation,fewer channels 60 per unit area are provided near the perimeter of theplaten 54 compared to the number of channels near the center of the platen. Such a pattern increases the contact area between the platen and a surface of the substrate near the substrate edges compared to the contact area between the platen and a surface of the substrate near the substrate center. Therefore, the pattern ofchannels 60 also can help compensate for thermal losses near the edges of the substrate to provide a more uniform temperature profile across the substrate. - In operation, according to one implementation, an external robot, such as the robot12 (FIG. 1), loads a substrate into the heating
load lock chamber 30B and places the substrate onto thetransfer mechanism 38. Thelower heating platen 54 is raised and lifts the substrate off thetransfer mechanism 38. Theplaten 54 continues rising until the substrate is brought to a heating position. The heating position should be as close as possible to the position in which the thermal losses from the edges of the substrate to the cooler walls of thechamber body 32 are minimized. In one implementation, for example, the substrate can be lifted to within several millimeters of theupper heating assembly 56 so that the viewing angle of the substrate edge with respect to the chamber walls is reduced as much as possible. As the chamber is heated, cooling water tubes with an appropriate degree of thermal contact to the outer walls of the chamber help maintain the temperature of the chamber walls within a desired range and prevent the walls from becoming too hot. The cooling tubes may be joined to a plate which is affixed to the chamber walls. For example, in one implementation, the temperature of the chamber walls is maintained at approximately 100°C. In addition, thermal barriers can be provided along the outside walls of the chamber to protect workers or others from touching the hot chamber surfaces. - As the
lower platen 54 lifts the substrate off from thetransfer mechanism 38 and raises it to the heating position, some of thechannels 60 on the upper surface of the platen and holes through the platen allow gas that is between the platen and the substrate to escape. Thechannels 60 and holes thus help prevent the formation of a trapped cushion of gas that could cause the substrate to float and drift from its initial desired position on theplaten 54. - The
upper heating assembly 56 includes astationary plate 68, which can be made of stainless steel and which includes aninner heating loop 69A and anouter heating loop 69B, each of which has one or more heating elements, such as coils. The temperature of theloops plate 68 for measuring its temperature. The thermocouples and heating elements can be coupled to thecontroller 66 byconnections 70 and 72, respectively. - The
stationary plate 68 further includes a series of vertical holes 78 (FIG. 7) which are formed through theplate 68. In the illustrated implementation, anouter zone 78A ofholes 78 and aninner zone 78B of holes are formed through theplate 68. Theheating assembly 56 also includes a diffusion screen 74 (FIG. 5) which can comprise one or more fine mesh screens or filters with multiple holes. The diffusion screen 74 is mounted to thestationary plate 68, for example, by a clamp 76. - Once a substrate is moved to its heating position in the
chamber 30B, theupper heating assembly 56 heats the substrate primarily by conduction and radiation. Using an upper heater assembly which has zones of various emissivities on the surface facing the substrate can be used to facilitate the substrate heating rate, and thermal uniformity can be controlled. An inert gas, such as nitrogen or argon, can be introduced from a gas source 100A via thedelivery tube 42 to the back-side orupper surface 80 of theplate 68 to facilitate the heating process further. The gas flows along theupper surface 80 of theplate 68 toward theholes 78. The gas, which is heated as it flows along theupper surface 80, then can pass through theholes 78 to the front-side or lower surface of theplate 68. The amount of gas flow exiting from the inner andouter zones holes 78 in thestationary plate 68, as well as by varying the gas pressure in the zones. - Once the gas flows to the front-side of the
plate 68, the diffusion screen 74 directs the gas onto the substrate surface facing theheating assembly 56. The diffusion screen 74 can restrict the flow of the gas to limit disturbances that otherwise may be caused as the gas flows onto the substrate. The diffusion screen 74 also can bias the heat transfer to the substrate to improve the uniformity of the substrate temperature. For example, the diffusion screen 74 preferentially can introduce more (or less) gas near the outer portions of the chamber to provide a more uniform temperature across the substrate. If a diffusion screen is not used, the gas flows directly on to the substrate. - The configuration of FIGS. 4-7 can be used, for example, as an input load lock chamber in which a substrate is heated prior to being transferred to a process chamber. Such pre-process heating may be required or desirable, for example, in CVD and PVD systems, as well as other substrate processing systems. When the
load lock chamber 30B is used as an input chamber to heat the substrate prior to its transfer to a process chamber, the amount and extent of gas flow from thedelivery tube 42 may need to be regulated or limited to allow thechamber 30B to be pumped down to a vacuum or some other process pressure. - Once the desired heating of the substrate occurs, the
platen 54 is lowered, allowing the substrate to be transferred back to thetransfer mechanism 38. The substrate then can be transferred by thetransfer mechanism 38, for example, to the process chamber 6. - The
chamber 30B also can be used as an ash load lock chamber. In such an application, the inert gas source 100 is replaced by anash gas source 100B (FIG. 8). Such a configuration can be used, for example, as an output load lock chamber where, in addition to providing a transition to atmospheric pressure, a post-process ash takes place. In one implementation, thechamber 30B can be used as an ash load lock to ash a photoresist layer on a substrate that is received from a primary process chamber, such as the chamber 6 (FIG. 1). - When the
chamber 30B is configured as an ash load lock chamber, the chamber is typically heated to a lower temperature than when the chamber is used as an input heating load lock. In one exemplary application, thecontroller 66 heats thechamber 30B to approximately 150°C., and an ash gas, such as oxygen (O2) or carbon tetra fluoride (CF4), is provided to the chamber interior via thedelivery tube 42. Once the ashing process is completed, the load lock is pumped, purged and vented to atmospheric pressure. The substrate then can be transferred, for example, by therobot 16 to theconveyor 10. - The chamber30 (FIG. 2) also can be configured as a cooling
load lock chamber 30C (FIGS. 9-12). The coolingconfiguration 30C includes a removableupper cooling assembly 86 and a removablelower cooling platen 84. Theupper cooling assembly 86, which is described in greater detail below, can be attached to thechamber lid 34, for example, by shoulder screws, clamps or bolts. - The
lower cooling platen 84 is a vertically movable temperature controlled cooling plate, which can be formed, for example, from stainless steel or aluminum. When a substrate is placed on thelower platen 84, the lower platen conducts heat directly from the substrate, thereby cooling the substrate. When temperatures of the chamber walls and arriving substrates are sufficiently low, the lower platen may have sufficient heat loss to the chamber to allow continuous operation without the need to be actively cooled, for example, by running water through it. When necessary, however, thelower platen 84 includesmultiple cooling tubes 92 through which a cooling fluid, such as water, can flow. The water can be provided to thecooling tubes 92 through a stainlesssteel water line 82 which extends through theaperture 44 and which is welded to thelower platen 84. Thecontroller 66 can control the flow of water through thewater line 82 to thetubes 92. Thewater line 82 can be surrounded by a bellows (not shown) to maintain the pressure within the chamber when theplaten 84 moves vertically as described below. The position and concentration of thecooling tubes 92 is selected to obtain a more uniform temperature profile across the substrate by taking into account or compensating for thermal losses near the edges of the substrate. Thus, for example, the concentration ofcooling tubes 92 near the center of theplaten 84 can be greater than the concentration near its perimeter. Such a configuration can provide a more uniform temperature profile throughout the substrate, can help reduce the likelihood of substrate breakage, and can facilitate the rapid cooling of the substrate in theload lock chamber 30C. - The upper surface of the
lower platen 84 includes a pattern of one or more horizontal grooves or channels 90 (FIGS. 10-11). In one implementation, twosets ofchannels 90 are formed across the surface of thelower platen 84 with one set of channels formed substantially perpendicular to the other set. In the illustrated implementation, thechannels 90 have a width of about 6 mm and a depth of about 1 mm. Other dimensions may be suitable for particular applications. The spacing between thechannels 90, or the concentration of the channels, is designed to control the contact area between a substrate and theplaten 84 and provides further control of the temperature gradient across the substrate. For example, in one implementation,more channels 90 per unit area are provided near the perimeter of theplaten 84 compared to the number of channels per unit area near the center of the platen. Such a pattern increases the contact area between theplaten 84 and a first surface of the substrate near its center compared to the contact area between the platen and a second surface of the substrate near its perimeter where the first and second areas are the same size. In general, the pattern ofchannels 90 on theplaten 84 can be designed to take into account or compensate for thermal losses near the edges of the substrate so as to provide a more uniform temperature profile throughout the substrate. - In operation, according to one implementation, a substrate is loaded from a process chamber, such as the chamber6 (FIG. 1), onto the
transfer mechanism 38 in the coolingload lock chamber 30C. Thelower cooling platen 84 is raised and lifts the substrate off thetransfer mechanism 38. Theplaten 84 continues rising until the substrate is brought to a cooling position. The substrate can be lifted, for example, to within several millimeters of theupper cooling assembly 86 so that the viewing angle of the substrate edge with respect to the chamber walls is reduced as much as possible when the substrate is in its cooling position. - The
upper cooling assembly 86 includes astationary plate 98, which can be made of stainless steel or aluminum and which includesmultiple cooling tubes 102 through which a cooling fluid, such as water, can flow. The configuration of the coolingtubes 102 also is designed to provide a more uniform temperature throughout the substrate by taking into account or compensating for thermal losses near the edges of the substrate. In one implementation, the concentration of the cooling channels is greater near the center of theplate 98 than near its perimeter. - The
stationary plate 98 further includes a series of vertical holes 108 (FIG. 12) which are formed through theplate 98. In the illustrated implementation, anouter zone 108A of holes 108 and an inner zone 108B of holes 108 are formed through theplate 98. Theupper cooling assembly 86 also includes a diffusion screen 104 (FIG. 10) which can comprise one or more fine mesh screens or filters having multiple holes. In some implementations, thediffusion screen 104 preferentially can introduce more (or less) gas near the center of the chamber relative to other parts of the chamber. Thediffusion screen 104 is mounted to thestationary plate 98, for example, by aclamp 106. - Once a substrate is moved to its cooling position in the
chamber 30C, theupper cooling assembly 86 helps cool the substrate primarily by forced convection and radiation processes. Zones of various emissivities on the surface of the upper cooling assembly facing the substrate also can be used to facilitate the cooling process and tailor thermal uniformity. An inert gas, such as nitrogen or argon, can be introduced from a gas source 100C via thedelivery tube 42 to the back-side orupper surface 110 of theplate 98 to facilitate the cooling process further. The gas flows along theupper surface 110 of theplate 98 toward the holes 108. The gas, which is cooled as it flows along theupper surface 110, then can pass through the holes 108 to the front-side or lower surface of theplate 98. The amount of gas flow exiting from the inner andouter zones 108A, 108B relative to one another into the chamber can be changed by varying the size or the number of holes 108 in thestationary plate 98, as well as by varying the gas pressure in the zones. Water-cooling the stationary plate may not always be required. When it is not, the stationary plate acts to distribute the gas flow to the back or upper side of thediffusion screen 104. - The
diffusion screen 104 directs the gas onto the substrate surface facing theupper cooling assembly 86. Thediffusion screen 104 can restrict and distribute the flow of the gas to limit turbulence and eddy flows that otherwise may be present as the gas flows onto the substrate. Thediffusion screen 104 also can control the flow of gas to help bias heat transfer from the substrate. The diffusion screen can be designed, for example, so that the flow of the gas results in a more uniform temperature profile across the substrate. - When configured as a cooling load lock chamber, the
chamber body 32 andlid 34 also can be heated using theresistive elements 48 to maintain their temperature within a specified range above the cooling water temperature. In one implementation, the temperature of the chamber walls is maintained at approximately 100°C. Heating the walls of thechamber body 32 during a cooling process can provide several advantages. First, such heating can compensate for the thermal losses near the substrate edges, thereby providing a more uniform temperature profile across the substrate as it cools. Furthermore, such heating can help reduce adsorption of water vapor on the chamber walls while the chamber is open during substrate removal. Reducing the amount of water vapor can prevent the water vapor from combining with residual by-products from the process chamber 6, such as chlorine gas (Cl2). Preventing the combination of water vapor and such residual by-products is important because the combination of such chemicals can cause corrosion of thechamber 30C. Additionally, when the cooling load lock is arranged adjacent a process chamber in which heating of the walls is desirable or necessary, the hot surfaces of the chamber body also prevent the cooling load lock from acting as a heat sink and drawing heat from the process chamber. - The configuration of FIGS. 9-12 can be used, for example, as an output load lock chamber in which a substrate is cooled and the chamber is returned to atmospheric pressure prior to being transferred to the conveyor10 (FIG. 1). Such post-process cooling may be required or desirable, for example, in CVD or PVD systems where processing temperatures may reach 200-450°C. To accelerate the transition to atmospheric pressure, an inert gas such as nitrogen or argon can be provided to the
chamber 30C from thedelivery tube 42. Thechannels 90 in the upper surface of thelower cooling platen 84 and holes through the platen allow gas to reach the backside of the substrate which facilitates separating the substrate from the platen. The substrate then can be transferred to thetransfer mechanism 38 and to the conveyor 10 (FIG. 1). - Although the control system is shown as a
single controller 66, the control system can include multiple dedicated controllers to control such features as the movement of thelower platens upper assemblies chamber body 32 andchamber lid 34, the flow of a cooling fluid through theline 82, and the flow of gas through thegas tube 42. - As described above, a single load lock chamber30 (FIG. 1) can be configured in multiple configurations depending on the requirements of the particular substrate process system. The chamber design, therefore, facilitates changes in system design because the
chamber 30 can be reconfigured relatively easily and quickly. Furthermore, the various configurations of thechamber 30 allow transitions between first and second pressures, such as atmospheric and process pressures, to be performed quickly. - Various features of the load lock chamber can provide a more uniform temperature across a substrate as it is heated or cooled. Although it is desirable to obtain a perfectly uniform temperature across the substrate, it is difficult, if not impossible, to achieve such perfect uniformity in practice. Accordingly, various features of the load lock are designed to ensure that portions of the substrate near its edges are maintained at a temperature at least as high as the temperatures in other portions of the substrate. Such features result in a slight compressive force to the edges of the substrate and help reduce the likelihood of substrate breakage in the chamber. The various configurations also enable a substrate to be cooled or heated quickly, thereby increasing the throughput of the system.
- Other implementations are within the scope of the following claims.
Claims (95)
1. An evacuable chamber, comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber;
wherein the chamber is configurable using removable components in at least two of the following configurations: a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures; and
wherein when configured in the base configuration, the chamber further includes at least one removable volume reducing element disposed therein, when configured in the heating configuration, the chamber further includes an upper heating assembly and a heating platen, and when configured in the cooling configuration, the chamber further includes an upper cooling assembly and a cooling platen.
2. The chamber of wherein the chamber is configurable in the base configuration, the heating configuration and the cooling configuration.
claim 1
3. The chamber of wherein the chamber can be re-configured from a first one of the configurations to a second one of the configurations.
claim 1
4. The chamber of , wherein when configured in the base configuration, the chamber further includes upper and lower volume reducing elements, wherein the substrate support mechanism is disposed between the upper and lower volume reducing elements.
claim 1
5. The chamber of wherein the chamber is configured in the base configuration as an input chamber to provide a transition from atmospheric pressure to a process pressure.
claim 4
6. The chamber of wherein the chamber is configured in the base configuration as an output load lock chamber to provide a transition from a process pressure to atmospheric pressure.
claim 4
7. The chamber of further comprising:
claim 1
a substrate support mechanism disposed within the chamber; and
a lid attached to the chamber body;
wherein, when in the heating configuration, the upper heating assembly is disposed between the lid and the substrate support mechanism; and
the heating platen is movable to lift a substrate positioned on the support mechanism to a heating position below the upper heating assembly, and to lower the substrate from the heating position onto the support mechanism.
8. The chamber of wherein the chamber is configured as an input load lock chamber in the heating configuration to provide a transition from atmospheric pressure to a process pressure.
claim 7
9. The chamber of wherein the chamber is configurable as an ashing chamber.
claim 7
10. The chamber of wherein the chamber is configured as an output load lock chamber in the ashing configuration to provide a transition from a process pressure to atmospheric pressure.
claim 9
11. The chamber of further comprising:
claim 1
a substrate support mechanism disposed within the chamber; and
a lid attached to the chamber body,
wherein, when in the cooling configuration, the upper cooling assembly is disposed between the lid and the substrate support mechanism; and
the cooling platen is movable to lift a substrate positioned on the support mechanism to a cooling position below the upper cooling assembly, and to lower the substrate from the cooling position onto the support mechanism.
12. The chamber of wherein the chamber is configured as an output load lock chamber in the cooling configuration to provide a transition from a process pressure to atmospheric pressure.
claim 11
13. A load lock chamber, comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber;
a lid attached to the chamber body;
a substrate support mechanism disposed within the chamber; and
at least one removable volume reducing element disposed within the chamber.
14. The load lock chamber of wherein at least one volume reducing element includes a plastic material.
claim 13
15. The load lock chamber of further comprising a removable volume reducing element positioned adjacent and below a lid of the chamber.
claim 13
16. The load lock chamber of wherein the chamber has a bottom interior surface and includes a removable volume reducing element positioned adjacent and above the bottom interior surface.
claim 13
17. The load lock chamber of further comprising removable upper and lower volume reducing elements, wherein the substrate support mechanism is disposed between the upper and lower volume reducing elements.
claim 13
18. The load lock chamber of further comprising a gas delivery tube attached to the chamber, wherein the upper volume reducing element includes vertical channels to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical channels.
claim 17
19. A load lock chamber-comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber;
a lid attached to the chamber body;
a substrate support mechanism disposed within the chamber;
an upper heating assembly disposed between the lid and the substrate support mechanism; and
a heating platen that is movable to lift a substrate positioned on the support mechanism to a heating position below the upper heating assembly, and to lower the substrate from the heating position onto the support mechanism,
wherein surface temperatures in the chamber are controllable to compensate for thermal losses near edges of the substrate.
20. The load lock chamber of wherein the heating platen includes inner and outer heating loops whose temperatures are independently controllable.
claim 19
21. The load lock chamber of wherein, during operation, the temperature of the outer loop is maintained at a higher temperature than the inner loop.
claim 20
22. The load lock chamber of wherein the heating platen includes an upper surface having a pattern of horizontal channels therein.
claim 19
23. The load lock chamber of wherein the heating platen includes a plurality of holes therethrough.
claim 22
24. The load lock chamber of wherein a concentration of the channels is designed to control a contact area between a substrate and the heating platen when the substrate is supported on the upper surface of the platen.
claim 22
25. The load lock chamber of wherein the heating platen has a perimeter and a center, and wherein the concentration of the channels is greater near the center of the platen than near its perimeter.
claim 24
26. The load lock chamber of wherein the upper heating assembly includes a stationary plate having inner and outer heating loops whose temperatures can be controlled independently of one another.
claim 19
27. The load lock chamber of further comprising a gas delivery tube attached to the chamber body, wherein the stationary plate includes a plurality of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes.
claim 26
28. The load lock chamber of wherein the plurality of holes includes an inner zone of holes near a center of the stationary plate and an outer zone of holes near a perimeter of the stationary plate.
claim 27
29. The load lock chamber of wherein the upper heating assembly further includes a diffusion screen disposed between the stationary plate and the substrate heating position.
claim 27
30. The load lock chamber of further comprising an inert gas source coupled to the delivery tube.
claim 29
31. The load lock chamber of further comprising an ash gas source coupled to the delivery tube.
claim 27
32. A load lock chamber, comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber;
a lid attached to the chamber body;
a gas delivery tube;
a substrate support mechanism disposed within the chamber;
an upper heating assembly disposed between the lid and the substrate support mechanism; and
a heating platen that is movable to lift a substrate positioned on the support mechanism to a heating position below the upper heating assembly, and to lower the substrate from the heating position onto the support mechanism;
wherein the upper heating assembly includes:
a stationary plate having a plurality of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes; and
33. The load lock chamber of wherein the stationary plate further includes inner and outer heating loops whose temperatures can be controlled independently of one another.
claim 32
34. The load lock chamber of wherein the plurality of holes includes an inner zone of holes near a center of the stationary plate and an outer zone of holes near a perimeter of the stationary plate.
claim 32
35. A load lock chamber, comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber;
a lid attached to the chamber body;
a substrate support mechanism disposed within the chamber;
an upper cooling assembly disposed between the lid and the substrate support mechanism;
a cooling platen that is movable to lift a substrate positioned on the support mechanism to a cooling position below the upper cooling assembly, and to lower the substrate from the cooling position onto the support mechanism,
wherein surface temperatures in the chamber are controllable to compensate for thermal losses near edges of the substrate.
36. The load lock chamber of wherein the cooling platen includes a plurality of cooling tubes through which a cooling fluid can flow.
claim 35
37. The load lock chamber of wherein the cooling platen includes a center and a perimeter, wherein a concentration of the cooling tubes near the center of the platen is greater than a concentration near the perimeter.
claim 36
38. The load lock chamber of wherein the cooling platen includes an upper surface having a pattern of horizontal channels therein.
claim 35
39. The load lock chamber of wherein the cooling platen includes a plurality of holes therethrough.
claim 38
40. The load lock chamber of wherein a concentration of the channels is designed to control a contact area between a substrate and the cooling platen when the substrate is supported on the upper surface of the platen.
claim 38
41. The loadlock chamber of wherein the cooling platen has a perimeter and a center, and wherein the concentration of the channels is greater near the perimeter of the cooling platen than near the center.
claim 40
42. The load lock chamber of further comprising a gas delivery tube attached to the chamber, wherein the upper cooling assembly includes a stationary plate having a plurality of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes.
claim 34
43. The load lock chamber of wherein the stationary plate has a perimeter, and wherein the plurality of holes includes an inner zone of holes near a center of the stationary plate and an outer zone of holes near a perimeter of the stationary plate.
claim 42
44. The load lock chamber of wherein the upper cooling assembly further includes a diffusion screen disposed between the stationary plate and the substrate cooling position.
claim 42
45. The load lock chamber of further comprising an inert gas source coupled to the delivery tube.
claim 42
46. The load lock chamber of wherein the stationary plate includes a plurality of cooling tubes through which a cooling fluid can be provided to flow.
claim 45
47. The load lock chamber of wherein the stationary plate has a perimeter and a center, and wherein a concentration of the cooling tubes is greater near the center of the stationary plate than near the perimeter.
claim 46
48. A load lock chamber comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber;
a lid attached to the chamber body;
a gas delivery tube;
a substrate support mechanism disposed within the chamber;
an upper cooling assembly disposed between the lid and the substrate support mechanism; and
a cooling platen that is movable to lift a substrate positioned on the support mechanism to a cooling position below the upper cooling assembly, and to lower the substrate from the cooling position onto the support mechanism;
wherein the upper cooling assembly includes a stationary plate having a plurality of vertical holes to allow a gas to be delivered from the delivery tube to an interior region of the chamber via the vertical holes.
49. The load lock chamber of wherein the stationary plate further includes a plurality of cooling tubes through which a cooling fluid can flow.
claim 48
50. The load lock chamber of wherein the stationary plate has a perimeter and a center, and wherein a concentration of the cooling tubes is greater near the center of the stationary plate than near the perimeter.
claim 48
51. The load lock chamber of wherein the plurality of holes includes an inner zone of holes near a center of the stationary plate and an outer zone of holes near a perimeter of the stationary plate.
claim 48
52. A load lock chamber comprising:
a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber; and
a thermally conductive platen for supporting a substrate within the chamber, wherein the platen has multiple zones for preferentially changing the temperature of the substrate by conduction so as to compensate for thermal losses near edges of the substrate.
53. The load lock chamber of wherein the platen is a heating platen.
claim 52
54. The load lock chamber of wherein the heating includes inner and outer heating loops whose temperatures are independently controllable.
claim 53
55. The load lock chamber of wherein, during operation, the temperature of the outer loop is maintained at a higher temperature than the inner loop.
claim 54
56. The load lock chamber of wherein the heating platen includes an upper surface having a pattern of horizontal channels therein, wherein a concentration of the channels is designed to control a contact area between a substrate and the heating platen when the substrate is supported on the upper surface of the platen.
claim 55
57. The load lock chamber of wherein the heating platen has a perimeter and a center, and wherein the concentration of the channels is greater near the center of the platen than near its perimeter.
claim 56
58. The load lock of wherein the platen is a cooling platen.
claim 52
59. The load lock chamber of wherein the cooling platen includes a perimeter, a center, and an upper surface having a pattern of horizontal channels therein, and wherein a concentration of the channels is greater near the perimeter of the cooling platen than near the center.
claim 58
60. The load lock chamber of wherein the cooling platen includes a plurality of cooling tubes through which a cooling fluid can flow and wherein the cooling platen includes a center and a perimeter, wherein a concentration of the cooling tubes near the center of the platen is greater than a concentration near the perimeter.
claim 59
61. A method of processing a substrate in a load lock chamber, the method comprising:
supporting the substrate on a substrate support mechanism within the chamber;
changing the pressure in the chamber from a first pressure to a second pressure; and
controlling surface temperatures in the chamber to compensate for thermal losses near edges of the substrate.
62. The method of comprising heating walls of the chamber to compensate for thermal losses near the edges of the substrate.
claim 61
63. The method of comprising heating a lid of the chamber to compensate for thermal losses near the edges of the substrate.
claim 62
64. The method of further comprising heating the substrate in the load lock chamber by conduction.
claim 61
65. The method of further comprising transferring the substrate from the support mechanism onto a heating platen.
claim 64
66. The method of wherein transferring the substrate comprises raising the heating platen to lift the substrate off the support mechanism.
claim 65
67. The method of wherein heating the substrate by conduction comprises heating the platen so that an upper surface of the platen has a temperature gradient that generally increases from a point near a center of the platen to a point near a perimeter of the platen.
claim 65
68. The method of wherein heating the substrate by conduction comprises providing a contact area between the upper surface of the platen and a first surface area of the substrate near the perimeter of the substrate that is greater than a contact area between the upper surface of the platen and a second surface area of the substrate near the center of the substrate, wherein the first and second surface areas of the substrate are the same size.
claim 67
69. The method of further comprising heating the substrate in the load lock chamber by radiation.
claim 61
70. The method of wherein heating the substrate by radiation comprises:
claim 69
raising the substrate to a heating position near a stationary plate; and
heating the stationary plate so that the plate has a temperature gradient that generally increases from a point near a center of the plate to a point near a perimeter of the plate.
71. The method of further comprising heating the substrate in the load lock chamber by forced convection.
claim 70
72. The method of wherein heating the substrate by forced convection comprises providing a gas to an interior of the chamber.
claim 71
73. The method of wherein providing the gas to the interior of the chamber comprises forcing the gas to travel through the stationary plate.
claim 72
74. The method of wherein providing the gas to the interior of the chamber further comprises forcing the gas to travel along an upper surface of the stationary plate prior to travelling through the plate.
claim 73
75. The method of further comprising forcing the gas to travel through a diffusion screen after travelling through the stationary plate to control the diffusion of the gas into the chamber interior.
claim 73
76. The method of wherein the gas is an inert gas.
claim 75
77. The method of wherein the gas is an ash gas.
claim 75
78. The method of further comprising:
claim 61
transferring the substrate from the support mechanism onto a heating platen; and
moving the heating platen to a position within the chamber to reduce a viewing angle of the substrate with respect to walls of the chamber.
79. The method of further comprising cooling the substrate in the load lock chamber by conduction.
claim 61
80. The method of further comprising transferring the substrate from the support mechanism onto a cooling platen.
claim 79
81. The method of wherein transferring the substrate comprises raising the cooling platen to lift the substrate off the support mechanism.
claim 80
82. The method of wherein cooling the substrate by conduction comprises cooling the platen so that an upper surface of the platen has a temperature gradient that generally increases from a point near a center of the platen to a point near a perimeter of the platen.
claim 80
83. The method of wherein cooling the substrate by conduction comprises providing a contact area between the upper surface of the platen and a first surface area of the substrate near the perimeter of the substrate that is less than a contact area between the upper surface of the platen and a second surface area of the substrate near the center of the substrate, wherein the first and second surface areas of the substrate are the same size.
claim 82
84. The method of further comprising cooling the substrate in the load lock chamber by radiation.
claim 61
85. The method of wherein cooling the substrate by radiation comprises:
claim 84
raising the substrate to a cooling position near a stationary plate; and
cooling the stationary plate so that the plate has a temperature gradient that generally increases from points near a center of the plate to points near a perimeter of the plate.
86. The method of further comprising cooling the substrate in the load lock chamber by forced convection.
claim 85
87. The method of wherein cooling the substrate by forced convection comprises providing a gas to an interior of the chamber.
claim 86
88. The method of wherein providing the gas to the interior of the chamber comprises forcing the gas to travel through the stationary plate.
claim 87
89. The method of wherein providing the gas to the interior of the chamber further comprises forcing the gas to travel along an upper surface of the stationary plate prior to travelling through the plate.
claim 88
90. The method of further comprising forcing the gas to travel through a diffusion screen after travelling through the stationary plate to control the diffusion of the gas into the chamber interior.
claim 88
91. The method of wherein the gas is an inert gas.
claim 90
92. The method of wherein the gas in an ash gas.
claim 90
93. The method of further comprising transferring the substrate from the support mechanism onto a cooling platen, wherein controlling surface temperatures includes heating walls of the chamber to compensate for thermal looses from the edges of the substrate.
claim 61
94. The method of further comprising transferring the substrate from the support mechanism onto a cooling platen, wherein controlling surface temperatures includes heating a lid of the chamber to reduce thermal looses from edges of the substrate.
claim 61
95. The method of further comprising:
claim 61
transferring the substrate from the support mechanism onto a cooling platen; and
moving the cooling platen to a position within the chamber to reduce a viewing angle of the substrate with respect to walls of the chamber.
Priority Applications (1)
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US09/732,159 US6435868B2 (en) | 1998-05-20 | 2000-12-07 | Multi-function chamber for a substrate processing system |
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Application Number | Priority Date | Filing Date | Title |
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US09/082,375 US6086362A (en) | 1998-05-20 | 1998-05-20 | Multi-function chamber for a substrate processing system |
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US09/732,159 US6435868B2 (en) | 1998-05-20 | 2000-12-07 | Multi-function chamber for a substrate processing system |
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US09/502,117 Division US6193507B1 (en) | 1998-05-20 | 2000-02-10 | Multi-function chamber for a substrate processing system |
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US09/732,159 Expired - Fee Related US6435868B2 (en) | 1998-05-20 | 2000-12-07 | Multi-function chamber for a substrate processing system |
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US09/502,117 Expired - Lifetime US6193507B1 (en) | 1998-05-20 | 2000-02-10 | Multi-function chamber for a substrate processing system |
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FR2824663A1 (en) * | 2001-05-14 | 2002-11-15 | Semco Sa | Silicon plate doping, diffusion or oxidation procedure and apparatus comprises oven subjected to constant depression as gas is introduced |
US20130294678A1 (en) * | 2009-12-10 | 2013-11-07 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing method |
US9462921B2 (en) | 2011-05-24 | 2016-10-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
US20210013260A1 (en) * | 2018-11-08 | 2021-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (Spin-Torque Transfer-Magnetic Random Access Memory) Devices |
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Publication number | Priority date | Publication date | Assignee | Title |
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Also Published As
Publication number | Publication date |
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US6435868B2 (en) | 2002-08-20 |
WO1999060609A3 (en) | 2001-03-15 |
KR20010025061A (en) | 2001-03-26 |
US6086362A (en) | 2000-07-11 |
JP2002516484A (en) | 2002-06-04 |
WO1999060609A2 (en) | 1999-11-25 |
EP1099239A2 (en) | 2001-05-16 |
KR100554016B1 (en) | 2006-02-22 |
TW495491B (en) | 2002-07-21 |
US6193507B1 (en) | 2001-02-27 |
JP2009076919A (en) | 2009-04-09 |
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