JP2888026B2 - Plasma CVD equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD apparatus, and more particularly, to a plasma CVD apparatus suitable for forming a thin film on a relatively large substrate by a plasma CVD method.
It relates to the D device.

[0002]

2. Description of the Related Art Conventionally, a plasma CVD apparatus has been used for forming a thin film on a relatively small substrate such as a silicon substrate for manufacturing a semiconductor, but recently, a thin film on a large area substrate such as a large liquid crystal plate has been used. It is also being used for formation. In addition, in the conventional plasma CVD apparatus, there were many batch-type apparatuses for performing a thin film forming process for every fixed number of substrates. A continuous apparatus for continuously performing a treatment, a heating treatment as a pre-treatment thereof, and a cooling treatment as a post-treatment has also been developed.

FIG. 6 shows a structure of a plasma CVD apparatus conventionally used for producing a large liquid crystal plate or the like.
A substrate 1 made of glass or the like includes a pair of left and right substrate trays 2.
, Each of which has a plurality of sheets,
Is a conveyor 2a driven via a motor or a gear mechanism.
Attached to. The substrate 1 is sequentially and continuously fed into the processing chamber 3 while being attached to the substrate tray 2,
When the processing is completed, it is carried out of the processing chamber 3. In the processing chamber 3, a sheathed heater panel 4 is installed at a gap position between the left and right base material trays 2.
Then, the substrate 1 is heated from the back. On the left and right outer sides of the substrate tray 2, gas ejection plates 5 also serving as electrodes are provided. A high-frequency power supply is connected to the electrode / gas ejection plate 5, and a reaction gas is supplied to the space behind the gas / ejection plate 5. A voltage is applied between the electrode / gas ejection plate 5 and the substrate tray 2. By ejecting the reaction gas from the front surface of the electrode / gas ejection plate 5 toward the substrate 1 while applying the voltage, a thin film is formed on the surface of the substrate 1.

As shown in FIG. 7, a plurality of processing chambers 3 are provided.
Are arranged side by side, the conveyor 2a is installed in a loop so as to go around a plurality of processing chambers 3.
As shown in the lower left part of the figure, after the substrate 1 is stored in the substrate tray 2, the substrate tray 2 is hung on the conveyor 2a. When the conveyor 2a operates, the substrate tray 2 sequentially passes through the processing chambers 3..., And in each processing chamber 3.

[0005]

However, in the conventional plasma CVD apparatus as described above, the thin film formed on the substrate tray falls off, and this thin film piece adheres to the substrate surface, deteriorating the surface quality. There was a problem of letting it.

That is, in the above-described plasma CVD apparatus, a thin film is formed on the substrate
A thin film is also formed. The substrate tray 2 is a conveyor 2a
And circulates through each of the processing chambers 3 and the external space, and is used repeatedly.
Heating, vacuum heating, film formation, cooling, and the like are repeated, and are subjected to extreme changes in temperature and pressure. As a result, the thin film adhering to the substrate tray 2 falls off, that is, the so-called film peeling occurs. If the thin film pieces dropped from the substrate tray 2 adhere to the surface of the substrate 1, the quality of the surface of the substrate 1 is impaired. Further, there is a problem that a thin film is also formed on the surface of a structural member of a conveying means such as a conveyor 2a to which the substrate tray 2 is attached, and the thin film falls off.

In order to prevent the thin film pieces from adhering to the surface of the substrate 1, the thin film may be removed from the substrate tray 2 or its transport structure. As a result, the operating rate of the plasma CVD apparatus is reduced, and the cost of maintenance management is increased.

Further, in the conventional plasma CVD apparatus, there is a problem that it takes time and energy to heat and cool the substrate 1. This is because the heater panel 4
When the substrate is heated, heat is transmitted to the substrate tray 2 at the same time. Since the substrate tray 2 has a considerably large heat capacity, the substrate tray 2 loses thermal energy,
The heating of the substrate 1 cannot be performed quickly, and there is much waste of heating energy. When cooling the substrate 1, the substrate tray 2 having a large heat capacity must be cooled at the same time.
The cooling time is long and the cooling energy is wasted.

If only the substrate 1 is heated and cooled without using the holding means for the substrate 1 such as the substrate tray 2, the heating and cooling time can be shortened and the energy consumption can be reduced.
It is very difficult to handle only the substrate 1 during the transportation to the processing chamber 3 and the formation of the thin film without damaging or deforming the substrate 1. Also in this case, the problem of the formation and detachment of the thin film remains in the handling mechanism of the substrate 1.

Further, since the heater panel 4 is disposed in the processing chamber 3 in a vacuum state with an interval between the heater panel 4 and the substrate 1, the efficiency of heat transfer from the heater panel 4 to the substrate 1 is low. There is also. This is because the heat of the heater panel 4 is
Since heat is mainly transmitted by heat conduction, heat is not efficiently transferred to the substrate 1 when the space between the substrate 1 and the substrate 1 is in a vacuum state.

Further, as shown in FIG. 7, if the conveyor line 2a has a circulation structure that circulates through the plurality of processing chambers 3 in one direction and returns to the original state through the outside of the processing chamber 3, There is also a problem that the installation space of the line 2a is required to be very large.

Accordingly, an object of the present invention is to solve the above-mentioned problems in the plasma CVD apparatus, and to provide a plasma CVD apparatus which is excellent in substrate heating performance, requires no maintenance work, and has good processing quality. To provide.

[0013]

A plasma CVD apparatus according to the present invention, which solves the above-mentioned problems, includes a thin film forming section and a transfer heating section communicating with a connection opening in a processing chamber, and the thin film forming section includes: A thin film forming means for depositing a thin film toward the connection opening is provided.The transfer heating unit includes a transfer means for taking a substrate holding member holding the substrate into and out of the processing chamber, and A heat transfer plate that abuts and transfers the substrate from the substrate holding member to a position that closes the connection opening and that transfers heat to the substrate is provided.

The basic structure of a plasma CVD apparatus is the same as that of an ordinary apparatus.
An electrode member for applying a voltage for forming plasma, a thin film forming means including a reaction gas supply means for supplying a reaction gas for forming the plasma, and a means for heating the substrate, and further holding the substrate. A substrate holding member such as a transfer pallet or a substrate tray is installed so as to be able to freely enter and exit the processing chamber by a transfer means such as a conveyor. As the substrate, a glass substrate or other ordinary substrate materials are used in accordance with the purpose of plasma CVD, and an arbitrary reaction gas can be used depending on the type of a thin film to be formed.

According to the present invention, in the processing chamber, the thin film forming section having the thin film forming means and the transport heating section having the heating means and the transport means communicate with each other through the connection opening, and the other portions are isolated from each other. Are separated. The connection opening is set to have such a shape and dimensions that when the substrate is arranged in the connection opening, the entire connection opening is substantially closed. The thin film forming means of the thin film forming unit is arranged so that the thin film is deposited toward the connection opening. Specifically, an electrode member and a reaction gas outlet are provided opposite the connection opening. Further, the vacuum evacuation device in the processing chamber is configured to be able to form a high vacuum state suitable for plasma CVD in the thin film forming section, but the degree of vacuum may be lower in the transport heating section than in the thin film forming section. In particular, when a thin film is formed, an inert gas is supplied to the transfer heating unit side so that the pressure of the transfer heating unit is higher than that of the thin film formation unit, so that the reactive gas leaks from the thin film formation unit to the transfer heating unit. Can be prevented.

The holding member for the substrate is formed of various thin films, such as a transport pallet for holding the substrate in a lying state and holding the outer periphery thereof, and a member for holding the substrate by standing or hanging the substrate. Normal substrate holding means used in the apparatus can be adopted. However, the substrate holding member needs to be structured so that the substrate can be transferred to the heat transfer plate side by the operation of the heat transfer plate described below.

The substrate holding member is transported from outside the processing chamber to the processing chamber by a transport means such as a conveyor. Conveying means, roller conveyor, hanger conveyor and others,
The structure of a transfer device used in a normal mechanical device is used. When the plasma CVD apparatus is provided with a plurality of processing chambers for forming a thin film or a processing chamber for pre-processing and post-processing, the transfer means can transfer the substrate holding member to each processing chamber sequentially. deep. Note that, although one substrate holding member may be sequentially transferred to all the processing chambers by the transport unit, one substrate holding member is reciprocated only between adjacent processing chambers. In this way, the substrates may be sequentially transferred to adjacent substrate holding members. Further, the substrate holding member is
Although it may be detachable from the transfer means, the substrate holding member and the transfer means may be integrated.

The heat transfer plate comes into contact with the back surface of the substrate held by the substrate holding member. That is, when the substrate and the substrate holding member are being conveyed by the conveying means, the heat transfer plate is at a position away from the back surface of the substrate, and can be moved to a position where it contacts the back surface of the substrate when necessary. It has become. In addition, the heat transfer transfer plate is movable so that the substrate can be removed from the substrate holding member and transferred to a state where the substrate is disposed at a position where the connection opening is closed, from the state in contact with the back surface of the substrate. I have. As a moving mechanism of the heat transfer plate, a moving mechanism combining a motor, a cylinder mechanism, and the like, similar to a normal mechanical device, can be adopted. However, when the heat transfer plate is operated, the substrate holding member and the transfer unit do not interfere, and when the heat transfer plate is moved to the connection opening side, the substrate holding member and the transfer unit are operated. The heat transfer plate should not be in the way.

The heat transfer plate can be heated freely. As a means for heating the heat transfer plate, a heat source such as a heater may be built in the heat transfer plate, but a heating lamp described below can also be used.

That is, the heat transfer transfer plate is simply made of a metal having good heat absorption performance, but does not have a heating source. Then, a light transmission window is provided on the wall surface of the processing chamber facing the heat transfer plate, and a heating lamp is provided outside the processing chamber adjacent to the light transmission window. Irradiation light of the heating lamp impinges on the rear surface of the heat transfer plate through the light transmission window, and as a result, the heat transfer plate is heated. The light-transmitting window is closed with a light-transmitting material such as quartz glass so that light from the heating lamp can be transmitted well and a vacuum state in the processing chamber can be maintained well. When heating the heat transfer plate, it is preferable to bring the heat transfer plate as close as possible to the position of the light transmission window so as to absorb the radiant heat from the heating lamp as effectively as possible.

Further, the heat transfer plate can be used as an electrode facing the electrode member when forming a thin film. That is, if the heat transfer plate is grounded, the heat transfer plate will be opposed to the electrode member to which voltage is applied in a state in which the heat transfer plate is in contact with the back surface of the substrate, and the deposition of a thin film on the substrate surface will be prevented. It can be performed well. However, it goes without saying that, apart from the heat transfer transfer plate, a ground electrode that contacts the substrate may be provided at the connection opening.

[0022]

According to the present invention, the thin film forming section and the transport heating section are shut off except for the connection opening, and when the thin film is formed, the connection opening is closed by the substrate. In such a state,
When the thin film is formed, the thin film formed on the substrate is not formed on the structural parts such as the substrate holding member and the transport means, and the thin film pieces dropped from the substrate holding member and the like adhere to the substrate surface. The problem is solved. Since the inside of the thin film forming section is always kept in a constant environment such as the degree of vacuum and temperature, even if the thin film adheres to the inner wall surface of the thin film forming section, the thin film does not fall off. .

Since the heat transfer plate for transferring the substrate from the substrate holding member to the connection opening contacts the substrate and transfers heat, the heat transfer from the heat transfer plate to the substrate is performed very efficiently.
There is no waste of heat energy. Further, when heat is transferred from the heat transfer plate to the substrate, the substrate and the substrate holding member are not in contact with each other, so that heat does not escape to the substrate holding member, and the heat energy utilization efficiency is high. Further, the substrate after the formation of the thin film is transferred from the heat transfer plate to the substrate holding member, so that the substrate separated from the heat transfer plate in a heated state is quickly cooled, so that the cooling time is shortened. Energy required for cooling can also be reduced.

[0024]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 shows the overall structure of a plasma CVD apparatus. Preheating chamber 10a, multiple thin film forming chambers 10b, 10c, 10d and cooling chamber 10e
Are connected to each other through an inter-room gate valve 14. A roller conveyer 50 as a conveying means is provided through each processing chamber 10a. On the roller conveyor 50, a transport pallet 60 as a substrate holding member is provided.
And the substrate 40 on which the thin film is to be formed is accommodated in the transport pallet 60. The substrate 40 is provided in each processing chamber 10a.
… While being moved in order, given processing,
The processed substrate 40 is sent out from the other end of the apparatus. The transport pallet 60 is provided with a transport pallet 60 which reciprocates between the preliminary heating processing chamber 10a and the next thin film forming processing chamber 10b from outside the apparatus. That is, the transport pallet 60 for reciprocating the range of W ₁ in FIG. Next, conveying pallet 60 the thin film formation process chamber 10b and the next film formation processing chamber 10c and between the next film formation processing chamber 10d which (in the figure, the range of W ₂₎ to reciprocate
Is provided. Further, the thin film forming treatment chamber 10d and the cooling chamber 10e and the outside of the apparatus (in the figure, W range ₃₎ transport pallet 60 to reciprocate is provided. Therefore, the substrate 40 is transferred from one end to the other end of the apparatus while being sequentially transferred to the plurality of reciprocating transfer pallets 60.

FIG. 1 shows the internal structure of the thin film forming chamber 10 (10b, 10c, 10d) of the plasma CVD apparatus. The processing chamber 10 has a central heating and heating unit 30.
And a thin film forming section 20 provided thereabove.

The left and right ends of the transport heating section 30 are connected to the adjacent processing chamber 10 via the inter-room gate valve 14.
A roller conveyer 50 serving as a conveying means is provided across the conveyance heating unit 30. The transport heating section 30 is provided with a vacuum exhaust port 34 and an inert gas inlet 32.
The transport pallet 40 as a substrate holding member is placed on the roller conveyor 50, and reciprocates in the horizontal direction by driving the roller conveyor 50. Transport pallet 40
Reciprocates between the central processing chamber 10 and the adjacent processing chambers 10, 10. A substrate 60 on which a thin film is to be formed is placed on the transport pallet 40.

A heat transfer plate 70 is provided below the passage of the transport pallet 40. The heat transfer transfer plate 70 is attached to an elevating arm 76 with a heat insulating member 74 interposed therebetween. The elevating arm 76 is driven by a motor 78 or the like so as to be able to move up and down. In addition, the heat transfer plate 70 has good absorption of radiant heat and is formed of a conductive metal or the like.
Grounded.

Below the heat transfer plate 70, the lower wall surface of the processing chamber 10 is formed so as to penetrate into the light transmission window 16. The light transmission window 16 is closed by a light transmission plate 81 made of quartz glass or the like. Further below the light transmission window 16, the processing chamber 10
Is provided with a heating lamp 80 outside. The heating lamp 80 includes a light source lamp 82 composed of a halogen lamp or an infrared lamp, a reflector 84, and the like.
Irradiation light passes through the light transmission window 81 and strikes the heat transfer plate 70 in the processing chamber 10, and the heat transfer plate 7
Heat 0.

When the heat transfer plate 70 moves upward, the heat transfer plate 70 extends through the space 42 formed through the center of the transport pallet 40.
And can abut on the back surface of the substrate 60. The heat transfer transfer plate 70 in contact with the substrate 60 moves further upward, pulls out the substrate 60 above the transport pallet 40, and lifts the substrate 60 to a position where the connection opening 12 is closed. In a state where the substrate 60 is disposed in the connection opening 12, the upper thin film forming section 20 and the lower transport heating section 30 are substantially hermetically separated. Substrate 606
If the connection opening 12 is completely sealed with the heat transfer plate 70, it is possible to reliably prevent the reaction gas from leaking to the side of the transport heating section 30, but even if there is a slight gap, there is no practical problem. do not become.

In the thin film forming section 20, a gas ejection plate 22 is disposed above the connection opening 12. A large number of ejection holes are formed through the gas ejection plate 22. An electrode member 21 is mounted above the gas ejection plate 22 with a gap. The electrode member 21 includes
A high frequency power supply 25 is connected to the
, And is fixed to the inner wall of the processing chamber 10. A reaction gas introduction pipe 23 is connected to the electrode member 21 to supply a reaction gas for forming a thin film between the electrode member 21 and the gas ejection plate 22.

A reaction gas exhaust passage 26 is provided on the outer periphery of the space between the gas ejection plate 22 and the connection opening 12. A large number of exhaust holes 260 are formed through the inner surface of the exhaust path 26. Further, the exhaust path 26 is connected to an exhaust port 27. The reaction gas ejected from the gas ejection plate 22 deposits a thin film on the substrate 60 disposed in the connection opening 12 and is exhausted to the outside from the exhaust port 27 through the exhaust hole 260 of the exhaust path 26.

FIG. 2 shows the internal structure of the processing chamber 10 in more detail. The transport pallet 40 is supported by a roller conveyor 50 having a number of guide rollers so as to be movable in the horizontal direction. The drive pinion 52 of the roller conveyor 50 is connected to a rack 54 fixed to the transport pallet 40.
When the drive pinion 52 is rotationally driven by meshing with
The transport pallet 50 reciprocates in the horizontal direction.

At the center of the transport pallet 40, a space 42 is formed in accordance with the outer shape of the substrate 60. At the positions corresponding to the four corners of the substrate 60 on the transport pallet 40, holding blocks 46 made of a heat insulating material such as ceramic are attached. The substrate 60 is placed on the transport pallet 40 in a state of being fitted inside the holding block 46.

The heat transfer transfer plate 70 has an outer shape slightly smaller than the central space 42 of the transport pallet 40, and has a protruding arm 72 provided on one side thereof. And is fixed to the lifting arm 76. A notch 44 is formed in the transfer pallet 40 at a position corresponding to the projecting arm 72 of the heat transfer plate 70.
0 can freely move up and down through the transport pallet 40.

Plasma CVD having the above structure
The operation of the device will be described. First, the heat transfer plate 70
Is heated to a predetermined temperature by irradiation of the heating lamp 80 as described above. Except when the heat transfer plate 70 moves upward, the heat transfer plate 70 is always irradiated by the heating lamp 80,
A predetermined temperature is maintained.

When the substrate 60 placed on the transport pallet 40 is carried into the processing chamber 10, the entire processing chamber 10 is exhausted from the vacuum exhaust port 34. The heat transfer plate 70 is raised to abut the rear surface of the substrate 60, and the substrate 60 is transferred to the transport pallet 40.
From the connection opening 12. When the heat transfer plate 70 contacts the substrate 60, the substrate 60 is quickly heated by heat conduction from the heat transfer plate 70.

An inert gas inlet 32 is provided in the transport heating section 30.
Then, an inert gas such as a nitrogen gas is introduced from the apparatus, and the vacuum exhaust port 34 is closed.

Next, the exhaust port 27 of the thin film forming section 20 is opened, and the reaction gas is introduced from the reaction gas introduction pipe 23. A voltage is applied to the electrode member 21. As a result, the reaction gas plasma ejected from the gas ejection plate 22 is deposited on the surface of the substrate 60 grounded via the heat transfer plate 70, and a thin film is formed with a predetermined thickness. In this embodiment, since the substrate 60 is located very close to the gas ejection plate 22 and the electrode member 21, the thin film can be formed more favorably than when the thin film is formed at the position of the transport pallet 40. A high quality thin film can be formed.

The reaction gas not used for forming the thin film is:
Air is exhausted through the exhaust path 26 and the exhaust port 27. Since the exhaust path 26 is disposed immediately outside the substrate 60,
The reaction gas is reliably sent to the exhaust path 26, and the connection opening 1
There is little leakage from 2 below. Moreover, since an inert gas is introduced into the transport heating section 30, the transport heating section 3
The pressure of 0 is higher than the pressure of the thin film forming section 20, and the reaction gas can be reliably prevented from leaking from the connection opening 12 to the side of the transport heating section 30.

After the formation of the thin film is completed, the residual gas is exhausted from the vacuum exhaust port 34 in the transport heating unit 30. By lowering the heat transfer plate 70, the substrate 60 on which the thin film formation has been completed
Is returned onto the transport pallet 40. Further, the entire processing chamber 10 is evacuated from the vacuum exhaust port 34.

The substrate 60 returned to the transport pallet 40 is
As the transport pallet 40 moves, it is sent to the next processing chamber 10. In the next processing chamber 10, the same thin film formation processing as described above is performed. However, in this case, after transferring the substrate 60 from the transport pallet 40 to the heat transfer plate 70, the transport pallet 40 is returned to the original processing chamber 10, and further, the processing chamber immediately before the original processing chamber 10 Transfer pallet 4 to 10
Return 0 to receive the substrate 40 to be processed next. That is, while the substrate 60 is being transferred to the heat transfer transfer plate 70, the transport pallet 40 is returned and moved, so that the time loss associated with the return operation of the transport pallet 40 is minimized.

In FIG. 3, the central thin film formation processing chamber 10 is shown.
b, 10c, (in the figure, W range ₂₎ 10d conveying pallet 40 that reciprocates the, it means that the temperature and the degree of vacuum is almost placed in a constant environment, the thin film is formed on the transport pallet 40 Even if it does, the thin film does not fall off, and there is no problem that the thin film pieces adhere to the surface of the base 60.

In the above-described embodiment, the roller conveyor 50 is provided as a means for transporting the substrate 60 over each of the processing chambers 10a to 10e, and a plurality of transport pallets 40 are reciprocally moved on the roller conveyor 50 in a predetermined range. This eliminates the need to install a return line for the transport pallet 40 outside the apparatus, unlike a conventional loop conveyor, and saves installation space for the entire plasma CVD apparatus. Further, as described above, the thin film formation processing chamber 10
Even if a thin film is formed on the transport pallet 40 that reciprocates between b, 10c, and 10d, there is no problem that the thin film is dropped off. Time is saved.

Next, FIGS. 4 and 5 show an embodiment in which the structure of the means for transporting the substrate 60 is different from that of the above embodiment. In this embodiment, a transfer arm 500 is used instead of using the roller conveyor 50. This transfer arm 5
Structures other than 00 are the same as those in the above-described embodiment, and thus description thereof is omitted.

The transfer arm 500 includes a plurality of arm members 5
02, and a number of gear mechanisms 504 for bending the arm member 502. The drive shaft 506 connected to the gear mechanism 504 is driven by a motor 508.
The transport pallet 40 similar to the above is fixedly attached to the tip of the arm member 502. The bending operation of the arm member 502 causes the transport pallet 40 to reciprocate in the horizontal direction.

As shown in FIG. 4, with the transfer arm 500 extending to the right in the figure, the transfer pallet 40 attached to the transfer arm 500 is placed at the center of the processing chamber 10, that is, above the heat transfer plate 70. Be placed. Transfer arm 500
When the transfer pallet 40 is contracted, the transfer pallet 40 is disposed at the position of the drive shaft 506, and when the transfer arm 500 extends to the opposite side, the transfer pallet 40 can enter the adjacent processing chamber 10. That is, the substrate 60 is transferred to the adjacent processing chamber 10.
Can be transferred to If the maximum expansion and contraction length of the transfer arm 500 is appropriately set, the substrates 60 can be transferred to the transfer arms 500 installed in each processing chamber 10 in order and the substrates 60 can be sent.

[0048]

As described above, in the plasma CVD apparatus according to the present invention, the thin film forming process is performed in the thin film forming section while the connection opening connecting the thin film forming section and the transport heating section is closed by the substrate. A thin film is formed on the substrate holding member or the like on the side of the transport heating unit, and this thin film is subsequently dropped and adheres to the surface of the substrate, impairing the finish quality of the substrate,
Does not occur.

Further, when forming a thin film, it is only necessary to set a necessary degree of vacuum or the like in the internal space of the thin film forming part without adjusting the atmosphere of the entire processing chamber, so that the thin film forming process can be easily performed.

The substrate is transferred from the substrate holding member to the heat transfer plate in contact with the back surface of the substrate, and the substrate is heated by heat conduction from the heat transfer plate. Can be heated. Since heat does not escape to the substrate holding member, heat energy can be effectively used. Further, when the heat transfer plate is separated from the substrate, the substrate having a small heat capacity is immediately cooled, so that the cooling time can be shortened and no energy is required for cooling. As a result, the mechanism required for heating and cooling can be simplified, energy consumption can be reduced, and plasma CV
The equipment cost and operation cost of the D device can be significantly reduced.

[Brief description of the drawings]

FIG. 1 is a sectional structural view showing an embodiment of the present invention.

FIG. 2 is a partially cutaway perspective view of a main part.

FIG. 3 is an external perspective view of the entire apparatus.

FIG. 4 is a sectional structural view showing another embodiment.

FIG. 5 is a perspective structural view of a transfer arm.

FIG. 6 is a sectional structural view of a conventional example.

FIG. 7 is an external perspective view of the whole device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Processing chamber 12 Connection opening 20 Thin film formation part 21 Electrode member 22 Gas ejection plate 30 Transport heating part 40 Transport pallet (substrate holding member) 50 Roller conveyor (transport means) 60 Substrate 70 Heat transfer plate 80 Heating lamp

──────────────────────────────────────────────────の Continued on the front page (72) Inventor Hiroshi Tanabe 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (58) Investigated field (Int.Cl. ⁶ , DB name) C23C 16/50 C23C 16/46 H01L 21/31

Claims (1)

(57) [Claims] 1. A processing chamber, comprising: a thin film forming unit communicating with a connection opening; and a transport heating unit, wherein the thin film forming unit includes a thin film forming unit for depositing a thin film toward the connection opening. The transfer means for taking the substrate holding member holding the substrate into and out of the processing chamber, and abutting the back surface of the substrate held by the substrate holding member to transfer the substrate from the substrate holding member to a position that closes the connection opening. A plasma CVD apparatus including a heat transfer plate for transferring heat to a substrate.