JP2000119848A - Vacuum film forming device - Google Patents

Vacuum film forming device

Info

Publication number
JP2000119848A
JP2000119848A JP10289624A JP28962498A JP2000119848A JP 2000119848 A JP2000119848 A JP 2000119848A JP 10289624 A JP10289624 A JP 10289624A JP 28962498 A JP28962498 A JP 28962498A JP 2000119848 A JP2000119848 A JP 2000119848A
Authority
JP
Japan
Prior art keywords
substrate
chamber
film forming
vacuum
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10289624A
Other languages
Japanese (ja)
Other versions
JP3844608B2 (en
Inventor
Seisuke Sueshiro
政輔 末代
Shigemitsu Sato
重光 佐藤
Hiroki Ozora
弘樹 大空
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP28962498A priority Critical patent/JP3844608B2/en
Priority to KR10-1999-0043798A priority patent/KR100508744B1/en
Priority to TW088117608A priority patent/TW439100B/en
Publication of JP2000119848A publication Critical patent/JP2000119848A/en
Application granted granted Critical
Publication of JP3844608B2 publication Critical patent/JP3844608B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463Cooling of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum film forming device which is compact in size, inexpensive in manufacture and excellent in productivity. SOLUTION: In a vacuum film forming device comprising a vacuum treatment chamber to perform film forming treatment on a substrate 10 and a feeding/ taking-out chamber which is provided with a cooling means 13 to cool the substrate and an exhausting means and carries the substrate from the outside in the atmospheric pressure in/our of the vacuum treatment chamber, a substrate heating means 17 is provided in the feeding/taking-out chamber. A cooling means comprising a plate 13a controlled at a low temperature is provided on the lower part inside the feeding/taking-out chamber, and a substrate heating means provided with a heater plate 16 opposite to the cooling means at an interval 19 with the cooling means is provided on the upper part inside the feeding/taking-out chamber and an elevating/lowering device 21 to move the substrate carried in the interval to the position close to or in contact with the plate and the raising position 30 is provided. Alternatively, the inside of the feeding/taking-out chamber is demarcated in two chambers, the cooling means comprising a plate controlled at a low temperature may be provided in one of them and the substrate heating means may be provided in the other.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、真空中で液晶用薄
膜等の各種の薄膜をスパッタリング、CVDなどの成膜
方法により基板に成膜する真空成膜装置に関する。
The present invention relates to a vacuum film forming apparatus for forming various thin films such as a liquid crystal thin film on a substrate in a vacuum by a film forming method such as sputtering or CVD.

【0002】[0002]

【従来の技術】従来、この種の真空成膜装置の代表的な
ものとして、例えば図1に示したような枚葉式のスパッ
タリング装置が知られている。この装置は、略六角形の
真空の搬送室aの周囲に、ガラス基板などの基板bを出
し入れする2室の仕込み取出し室c、dと、基板bを加
熱する加熱手段を備えた加熱室eと、基板bにエッチン
グやスパッタリングなどの成膜処理を施す真空処理室
f、g、hを設けたもので、該搬送室aの内部に設けた
搬送腕iにより仕込み取出し室c又はdからそこに用意
された基板bを取出し、加熱室eへ搬入する。該加熱室
eに於いて目的の温度にまで加熱されたのち、該搬送腕
iで真空処理室f、g、hへ送られ、これらの室内で該
基板bに成膜を施し、該搬送腕iで仕込み取出し室c又
はdへ戻され、所定温度まで冷却されて大気中へ取り出
される。
2. Description of the Related Art Conventionally, a single-wafer sputtering apparatus as shown in FIG. 1 has been known as a typical example of this type of vacuum film forming apparatus. This apparatus comprises two feeding chambers c and d for taking in and out a substrate b such as a glass substrate around a substantially hexagonal vacuum transfer chamber a, and a heating chamber e provided with heating means for heating the substrate b. And vacuum processing chambers f, g, and h for performing film forming processing such as etching and sputtering on the substrate b. The transfer arm i provided inside the transfer chamber a allows the transfer chamber c or d to move therefrom. The substrate b prepared in the above is taken out and carried into the heating chamber e. After being heated to a target temperature in the heating chamber e, the wafers are sent to the vacuum processing chambers f, g, and h by the transfer arm i, and a film is formed on the substrate b in these chambers. It is returned to the loading / unloading chamber c or d at i, cooled to a predetermined temperature, and taken out to the atmosphere.

【0003】[0003]

【発明が解決しようとする課題】従来の真空成膜装置
は、独立した加熱室が設備されているので、成膜装置全
体が大きくなり、装置価格が高価になる不都合があっ
た。また、基板を該加熱室に搬出入する時間と加熱する
ための時間が必要であるためタクトが遅くなり、生産性
が悪い欠点があった。
Since the conventional vacuum film forming apparatus has an independent heating chamber, there is a problem that the entire film forming apparatus becomes large and the apparatus price becomes expensive. In addition, there is a disadvantage in that the time required to carry the substrate in and out of the heating chamber and the time required to heat the substrate are required, so that the tact time is reduced and productivity is poor.

【0004】本発明は、小型で安価に製作でき、生産性
の良い真空成膜装置を提供することを目的とするもので
ある。
[0004] It is an object of the present invention to provide a vacuum film forming apparatus which can be manufactured in a small size at low cost and has good productivity.

【0005】[0005]

【課題を解決するための手段】本発明では、基板に成膜
処理を施す真空処理室と、該基板を冷却する冷却手段及
び排気手段を備えて該基板を大気圧の外部から該真空処
理室内へ搬出入するための仕込み取出し室を備えた真空
成膜装置に於いて、該仕込み取出し室に基板加熱手段を
設けることにより、上記目的を達成するようにした。こ
の目的は、該仕込み取出し室の内部の下方に低温に制御
されたプレートから成る該冷却手段を設けると共に該内
部の上方に該冷却手段と間隔を存して対向するヒーター
プレートを備えた該基板加熱手段を設け、該間隔に搬入
された基板を該プレートに接近又は接触した位置と浮上
位置とに移動させる昇降装置を設けた構成とすることに
より、或いは、該仕込み取出し室の内部を2室に区画
し、その一方の区画内に低温に制御されたプレートから
成る冷却手段を設け、もう一方の区画内に基板加熱手段
を設けた構成とすることにより、一層的確に達成でき
る。更に上記目的は、該冷却手段をその内部に流体通路
を備えたプレートで構成し、該流体通路に加熱流体を流
通させて基板加熱手段とすることでも達成できる。
According to the present invention, a vacuum processing chamber for forming a film on a substrate, a cooling means for cooling the substrate, and an exhaust means are provided so that the substrate can be removed from the atmosphere at atmospheric pressure. In a vacuum film forming apparatus provided with a charging / discharging chamber for loading / unloading the substrate, the above object is achieved by providing a substrate heating means in the charging / discharging chamber. The object of the present invention is to provide the cooling means comprising a low-temperature controlled plate below the inside of the loading and unloading chamber and the heater plate above the inside and opposed to the cooling means at a distance from the cooling means. By providing a heating means, and by providing a lifting device for moving a substrate carried in at the interval between a position approaching or in contact with the plate and a floating position, or two chambers in the charging / discharging chamber. This can be achieved more precisely by providing a cooling means comprising a plate controlled at a low temperature in one of the sections and a substrate heating means in the other section. Further, the above object can also be achieved by forming the cooling means by a plate having a fluid passage therein, and circulating a heating fluid through the fluid passage to serve as a substrate heating means.

【0006】[0006]

【発明の実施の形態】本発明の実施の形態を別紙図面に
基づき説明すると、図2に於いて符号1は六角形の平面
形状を持つ真空成膜装置の搬送室、符号2及び3は該搬
送室1の側面にドアバルブ4を介して連設した仕込み取
出し室、符号5乃至8は該搬送室1の他の側面にドアバ
ルブ4を介して連設した成膜用のエッチング装置やスパ
ッタリング装置などの公知の成膜装置を収容した真空処
理室を示す。これらの室は真空ポンプにより適当な圧力
に真空排気され、該搬送室1内には関節を持った昇降伸
縮旋回自在の搬送腕9が設けられる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the attached drawings. In FIG. 2, reference numeral 1 denotes a transfer chamber of a vacuum film forming apparatus having a hexagonal planar shape, and reference numerals 2 and 3 denote the same. A loading / unloading chamber connected to the side of the transfer chamber 1 via a door valve 4, and reference numerals 5 to 8 denote an etching apparatus and a sputtering apparatus for film formation connected to the other side of the transfer chamber 1 via the door valve 4. 1 shows a vacuum processing chamber containing a known film forming apparatus. These chambers are evacuated to an appropriate pressure by a vacuum pump, and a transfer arm 9 having an articulated up-and-down telescopic arm is provided in the transfer chamber 1.

【0007】各仕込み取出し室2、3は、成膜処理を施
す基板10を室内から大気中へ出し入れするための開口
11と、室内から搬送室1へ出し入れするための開口1
2が設けられ、図3に示したように、各室の下方の底面
には冷却プレート13aからなる接近又は接触式の冷却
手段13をそのプレート面を上方に向けて固定し、その
室内の上方にはハロゲンランプ14とリフレクター15
及びヒータープレート16で構成された基板加熱手段1
7を支柱18で固定した。各開口11、12は夫々ドア
バルブ4を閉じることにより密閉され、その内部は真空
排気口31から真空ポンプに連なる真空排気手段と、リ
ークバルブによる大気の導入とにより、真空圧と大気圧
とに制御される。
Each of the loading / unloading chambers 2 and 3 has an opening 11 through which a substrate 10 to be subjected to a film forming process is taken in and out of the room into the atmosphere, and an opening 1 through which a substrate 10 is taken in and out of the transfer chamber 1 from the room.
3, an approaching or contact-type cooling means 13 composed of a cooling plate 13a is fixed to the lower bottom surface of each chamber with its plate surface facing upward, and Has a halogen lamp 14 and a reflector 15
Heating means 1 constituted by a heater and a heater plate 16
7 was fixed with a support 18. Each of the openings 11 and 12 is closed by closing the door valve 4, and the inside thereof is controlled to a vacuum pressure and an atmospheric pressure by vacuum exhaust means connected to a vacuum pump from a vacuum exhaust port 31 and introduction of the atmosphere by a leak valve. Is done.

【0008】該冷却プレート13aのプレート面と該ヒ
ータープレート16のプレート面は、間隔19を存して
互いに対向し、該基板10が該間隔19へ開口11又は
12を介して搬送腕9により或いは公知のローディング
装置(図示してない)により搬出入される。該冷却プレ
ート13aのプレート面には、基板10の搬送のための
受け渡しと基板10の温度調整のために出没自在のピン
からなる昇降装置21を設け、該間隔19へ搬送腕9或
いはローディング装置に乗せられて基板10が搬入され
たとき、該昇降装置21が上昇して基板10を搬送腕9
等から持ち上げて浮上位置で受け取り、該搬送腕9等が
退去後に該昇降装置21が昇降して冷却プレート13a
上に接触した位置或いはヒータープレート16に例えば
数mmに接近した位置に基板10を位置させ、基板温度
を調節する。この温度調節が終わると、該昇降装置21
が昇降して該基板10を搬送腕9又はローディング装置
へ渡し、該搬送腕9等により搬送室1又は外部の大気中
へ基板10が取り出される。該基板10やこれに形成さ
れた膜が急冷などでダメージを受けることが予想される
場合は、基板10を冷却プレート13aに接近させ、そ
うでない場合は接触させて冷却する。
The plate surface of the cooling plate 13a and the plate surface of the heater plate 16 are opposed to each other with a space 19 therebetween, and the substrate 10 is moved to the space 19 via the opening 11 or 12 by the transfer arm 9 or It is carried in and out by a known loading device (not shown). On the plate surface of the cooling plate 13a, there is provided an elevating device 21 composed of pins that can move in and out for transferring and transferring the substrate 10 and adjusting the temperature of the substrate 10, and to the space 19, the transfer arm 9 or the loading device. When the substrate 10 is loaded and loaded, the elevating device 21 moves up to move the substrate 10 to the transfer arm 9.
And lifted up from the floating arm 21 and received at the floating position.
The substrate 10 is positioned at a position where the substrate 10 is in contact with the upper surface or a position close to the heater plate 16 by, for example, several mm, and the substrate temperature is adjusted. When the temperature adjustment is completed, the lifting device 21
Rises and descends to transfer the substrate 10 to the transfer arm 9 or a loading device, and the transfer arm 9 or the like takes out the substrate 10 into the transfer chamber 1 or the outside atmosphere. If the substrate 10 or a film formed thereon is expected to be damaged by rapid cooling or the like, the substrate 10 is brought close to the cooling plate 13a, otherwise, it is brought into contact with the cooling plate 13a and cooled.

【0009】該基板10は、これへの真空成膜に先立ち
例えば250℃程度の所定の温度に加熱され、その成膜
後には例えば50℃程度に冷却して大気中に取り出され
る。また、該基板10が大気圧の外部から該仕込み取出
し室2、3へ搬入されたとき、該仕込み取出し室2、3
は大気圧から真空圧にまで排気される。本発明に於いて
は、この基板10の加熱を該仕込み取出し室2、3に設
けた基板加熱手段17により大気圧から真空圧にまで排
気する時間を利用して行うもので、該仕込み取出し室
2、3内で所定温度に加熱された基板10を搬送腕9に
より直接に真空処理室5等へ搬入して成膜処理を施すこ
とができ、基板10の加熱のための独立した室が不要に
なるため真空成膜装置を小型に構成でき、必要な場合に
は図示のように真空処理室を増設できる。
The substrate 10 is heated to a predetermined temperature of, for example, about 250.degree. C. prior to vacuum film formation on the substrate 10, and after the film is formed, is cooled to, for example, about 50.degree. Further, when the substrate 10 is carried into the loading / unloading chambers 2 and 3 from the outside of the atmospheric pressure, the loading / unloading chambers 2 and 3
Is exhausted from atmospheric pressure to vacuum pressure. In the present invention, the heating of the substrate 10 is performed by utilizing the time for exhausting from the atmospheric pressure to the vacuum pressure by the substrate heating means 17 provided in the charging and discharging chambers 2 and 3. The substrate 10 heated to a predetermined temperature in 2 and 3 can be directly carried into the vacuum processing chamber 5 or the like by the transfer arm 9 to perform a film forming process, and an independent chamber for heating the substrate 10 is not required. Therefore, the vacuum film forming apparatus can be made compact, and if necessary, a vacuum processing chamber can be added as shown.

【0010】図3の構成の仕込み取出し室2、3では、
大気圧の外部から基板10が搬入されたときに昇降装置
21により浮上位置30にまで基板10を上昇させ、加
熱手段17を作動させながら該仕込み取出し室2、3内
を密閉して大気圧から真空圧にまで排気し、該基板10
が所定温度になったところで該昇降装置21が下降して
開口12を介して室内へ進入した搬送腕9上に基板10
を載せ、該搬送腕9が最初の成膜工程を行う処理室5へ
基板10を運ぶ。このあと、成膜工程に従い搬送腕9が
該処理室5から他の処理室へ搬送し、成膜が完了したと
ころで該仕込み取出し室2、3へ基板10を戻す。成膜
を終えた基板10は高温であるため冷却して大気中へ取
り出されるが、その冷却のため該昇降装置21が搬送腕
9から基板10を受領したのち下降して冷却手段13に
基板10を接触させ、所定の低温になったところで該昇
降装置21が基板10をローディング装置に受け渡すた
めに上昇し、該仕込み取出し室2、3内を大気圧にした
のち該ローディング装置が室内へ進入して成膜を終えた
基板10を大気中に搬出する。
In the loading / unloading chambers 2 and 3 having the structure shown in FIG.
When the substrate 10 is carried in from the outside of the atmospheric pressure, the substrate 10 is raised to the floating position 30 by the elevating device 21, and the inside of the loading / unloading chambers 2 and 3 is sealed while operating the heating means 17 to reduce the atmospheric pressure. The substrate 10 is evacuated to a vacuum pressure.
When the temperature reaches a predetermined temperature, the lifting / lowering device 21 descends, and the substrate 10 is placed on the transfer arm 9 that has entered the room through the opening 12.
, And the transfer arm 9 carries the substrate 10 to the processing chamber 5 where the first film forming process is performed. Thereafter, the transfer arm 9 is transferred from the processing chamber 5 to another processing chamber in accordance with the film forming process, and the substrate 10 is returned to the loading / unloading chambers 2 and 3 when the film formation is completed. The substrate 10 on which the film has been formed is cooled because it is at a high temperature and is taken out into the atmosphere. However, the cooling device 13 descends after receiving the substrate 10 from the transfer arm 9 for cooling. When the temperature has reached a predetermined low temperature, the lifting / lowering device 21 rises to transfer the substrate 10 to the loading device, and after the inside of the loading / unloading chambers 2 and 3 is brought to the atmospheric pressure, the loading device enters the room. The substrate 10 on which the film formation has been completed is carried out to the atmosphere.

【0011】図4及び図5に示した例は、1室の真空処
理室22のみを備えた真空成膜装置の例であり、この場
合は1室の仕込み取出し室23に搬送室1を介して該処
理室22を連設し、該仕込み取出し室23の内部を図6
に示すように仕込み室区画23aと取出し区画23bと
に区画し、仕込み区画23aに加熱手段17を設けると
ともに取出し区画23bに基板10を受け止めるための
支柱24を設けるようにした。該仕込み取出し室23に
は昇降旋回自在のベルトコンベアを備えた公知のローデ
ィング装置25を接続し、基板10を該ローディング装
置25の側方に設けたストックテーブル26から処理室
22へ搬送腕9で送り込み、成膜された基板10をもう
一方のストックテーブル27上に送り出すようにした。
The example shown in FIGS. 4 and 5 is an example of a vacuum film forming apparatus provided with only one vacuum processing chamber 22. In this case, the apparatus is connected to one charging / discharging chamber 23 via the transfer chamber 1. The processing chamber 22 is connected in series, and the inside of the charging and discharging chamber 23 is
As shown in FIG. 7, the heating chamber 17 is divided into a charging chamber section 23a and an unloading section 23b, and the heating section 17 is provided in the charging section 23a, and a support 24 for receiving the substrate 10 is provided in the unloading section 23b. The loading / unloading chamber 23 is connected to a known loading device 25 having a vertically movable belt conveyor, and the transfer arm 9 transfers the substrate 10 from a stock table 26 provided beside the loading device 25 to the processing chamber 22. The substrate 10 on which the film was fed and formed was sent out onto the other stock table 27.

【0012】図7に示した仕込み取出し室32は、流体
通路28を設けたプレート29を備えたもので、該流体
通路28に流れる流体を加熱流体又は低温流体として温
度を制御し、該プレート29に接触又は接近する基板1
0に加熱と冷却のいずれかが与えられるようにした。
The loading / unloading chamber 32 shown in FIG. 7 is provided with a plate 29 provided with a fluid passage 28. The temperature of the plate 29 is controlled by using the fluid flowing through the fluid passage 28 as a heating fluid or a low-temperature fluid. Substrate 1 contacting or approaching
0 was given either heating or cooling.

【0013】[0013]

【発明の効果】以上のように本発明によるときは、成膜
処理を施す基板を冷却する冷却手段及び排気手段を備え
た真空成膜装置の仕込み取出し室に、基板加熱手段を設
けるようにしたので、成膜を施す際の基板の加熱を仕込
み取出し室内を真空に排気する時間を利用して行うこと
ができ、タクト時間を短縮できて生産性が向上し、その
加熱のための独立した室が不要になるので成膜装置を小
型で安価に製作することが可能になり、必要な場合は成
膜の処理室を増設できる等の効果がある。
As described above, according to the present invention, a substrate heating means is provided in a loading / unloading chamber of a vacuum film forming apparatus provided with a cooling means for cooling a substrate to be subjected to a film forming process and an exhaust means. Therefore, the substrate can be heated during the film formation by using the time for evacuating the chamber for charging and discharging, thereby reducing the tact time and improving the productivity. Therefore, it is possible to manufacture a small-sized and inexpensive film-forming apparatus, and if necessary, it is possible to increase the number of processing chambers for film-forming.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来の真空成膜装置の全体平面図FIG. 1 is an overall plan view of a conventional vacuum film forming apparatus.

【図2】本発明の実施の形態を示す要部の平面図FIG. 2 is a plan view of a main part showing the embodiment of the present invention.

【図3】図2の3−3線部分の拡大断面図FIG. 3 is an enlarged sectional view taken along line 3-3 of FIG. 2;

【図4】本発明の他の実施の形態を示す斜視図FIG. 4 is a perspective view showing another embodiment of the present invention.

【図5】図4の平面図FIG. 5 is a plan view of FIG. 4;

【図6】図4の6−6線部分の拡大断面図FIG. 6 is an enlarged sectional view taken along line 6-6 of FIG. 4;

【図7】本発明の更に他の実施の形態を示す断面図FIG. 7 is a sectional view showing still another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 搬送室、2・3 仕込み取出し室、5・6・7・8
真空処理室、10 基板、13 冷却手段、13a
冷却プレート、16 ヒータープレート、17基板加熱
手段、19 間隔、21 昇降装置、23a・23b
区画、28 流体通路、29 プレート、30 浮上位
置、
1 transfer room, 2.3 preparation take-out room, 5.6, 7.8
Vacuum processing chamber, 10 substrates, 13 cooling means, 13a
Cooling plate, 16 heater plate, 17 substrate heating means, 19 interval, 21 elevating device, 23a / 23b
Compartment, 28 fluid passages, 29 plates, 30 floating position,

───────────────────────────────────────────────────── フロントページの続き (72)発明者 大空 弘樹 神奈川県茅ヶ崎市萩園2500番地 日本真空 技術株式会社内 Fターム(参考) 4K029 CA05 DA08 DC00 EA08 KA01 KA09  ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Hiroki Ozora 2500 Hagizono, Chigasaki-shi, Kanagawa F-term in Japan Vacuum Engineering Co., Ltd. 4K029 CA05 DA08 DC00 EA08 KA01 KA09

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】基板に成膜処理を施す真空処理室と、該基
板を冷却する冷却手段及び排気手段を備えて該基板を大
気圧の外部から該真空処理室内へ搬出入するための仕込
み取出し室を備えた真空成膜装置に於いて、該仕込み取
出し室に基板加熱手段を設けたことを特徴とする真空成
膜装置。
A vacuum processing chamber for forming a film on a substrate; a cooling means for cooling the substrate; and an exhaust means for loading and unloading the substrate from outside the atmospheric pressure into and out of the vacuum processing chamber. In a vacuum film forming apparatus having a chamber, a substrate heating means is provided in the charging / unloading chamber.
【請求項2】上記仕込み取出し室の内部の下方に低温に
制御されたプレートから成る上記冷却手段を設けると共
に該内部の上方に該冷却手段と間隔を存して対向するヒ
ータープレートを備えた上記基板加熱手段を設け、該間
隔に搬入された上記基板を該プレートに接近又は接触し
た位置と浮上位置とに移動させる昇降装置を設けたこと
を特徴とする請求項1に記載の真空成膜装置。
2. The cooling means comprising a low-temperature controlled plate below the inside of the charging / discharging chamber, and a heater plate opposed to the cooling means at a distance above the inside of the cooling means. 2. The vacuum film forming apparatus according to claim 1, further comprising a substrate heating means, and an elevating device for moving the substrate carried in the gap to a position approaching or in contact with the plate and a floating position. .
【請求項3】上記仕込み取出し室の内部を2室に区画
し、その一方の区画内に低温に制御されたプレートから
成る冷却手段を設け、もう一方の区画内に基板加熱手段
を設けたことを特徴とする請求項1に記載の真空成膜装
置。
3. The interior of the charging / unloading chamber is divided into two chambers, one of which is provided with cooling means comprising a plate controlled at a low temperature, and the other of which is provided with substrate heating means. The vacuum film forming apparatus according to claim 1, wherein:
【請求項4】上記冷却手段をその内部に流体通路を備え
たプレートで構成し、該流体通路に加熱流体を流通させ
て基板加熱手段とすることを特徴とする請求項1に記載
の真空成膜装置。
4. The vacuum forming device according to claim 1, wherein said cooling means is constituted by a plate having a fluid passage therein, and a heating fluid is circulated through said fluid passage to serve as a substrate heating means. Membrane equipment.
JP28962498A 1998-10-12 1998-10-12 Vacuum deposition system Expired - Fee Related JP3844608B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP28962498A JP3844608B2 (en) 1998-10-12 1998-10-12 Vacuum deposition system
KR10-1999-0043798A KR100508744B1 (en) 1998-10-12 1999-10-11 Vacuum film deposition apparatus
TW088117608A TW439100B (en) 1998-10-12 1999-10-12 Vacuum film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28962498A JP3844608B2 (en) 1998-10-12 1998-10-12 Vacuum deposition system

Publications (2)

Publication Number Publication Date
JP2000119848A true JP2000119848A (en) 2000-04-25
JP3844608B2 JP3844608B2 (en) 2006-11-15

Family

ID=17745653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28962498A Expired - Fee Related JP3844608B2 (en) 1998-10-12 1998-10-12 Vacuum deposition system

Country Status (3)

Country Link
JP (1) JP3844608B2 (en)
KR (1) KR100508744B1 (en)
TW (1) TW439100B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7182122B2 (en) 2000-08-11 2007-02-27 Anelva Corporation Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus
US9355878B2 (en) 2012-10-12 2016-05-31 Tdk Corporation Substrate processing apparatus
CN110323161A (en) * 2018-03-30 2019-10-11 芝浦机械电子株式会社 Organic membrane formation device and organic film manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110616406A (en) * 2018-11-29 2019-12-27 爱发科豪威光电薄膜科技(深圳)有限公司 Magnetron sputtering coating machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7182122B2 (en) 2000-08-11 2007-02-27 Anelva Corporation Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus
US9355878B2 (en) 2012-10-12 2016-05-31 Tdk Corporation Substrate processing apparatus
CN110323161A (en) * 2018-03-30 2019-10-11 芝浦机械电子株式会社 Organic membrane formation device and organic film manufacturing method
CN110323161B (en) * 2018-03-30 2023-06-06 芝浦机械电子株式会社 Organic film forming apparatus and organic film manufacturing method

Also Published As

Publication number Publication date
TW439100B (en) 2001-06-07
KR20000028980A (en) 2000-05-25
JP3844608B2 (en) 2006-11-15
KR100508744B1 (en) 2005-08-17

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