JPH0611913B2 - Thin film manufacturing equipment - Google Patents
Thin film manufacturing equipmentInfo
- Publication number
- JPH0611913B2 JPH0611913B2 JP9595786A JP9595786A JPH0611913B2 JP H0611913 B2 JPH0611913 B2 JP H0611913B2 JP 9595786 A JP9595786 A JP 9595786A JP 9595786 A JP9595786 A JP 9595786A JP H0611913 B2 JPH0611913 B2 JP H0611913B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- chamber
- vapor deposition
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 技術分野 本発明は薄膜製造装置に関し、特に薄膜堆積室の真空を
破ることなく連続的に薄膜形成が可能な薄膜製造装置に
関する。TECHNICAL FIELD The present invention relates to a thin film manufacturing apparatus, and more particularly to a thin film manufacturing apparatus capable of continuously forming a thin film without breaking a vacuum in a thin film deposition chamber.
従来技術 真空蒸着やスパッタリングにおいては、実際に蒸着やス
パッタ(以下、単に蒸着ということもある)する時間よ
りも、槽内を真空に引いて条件設定を行うために長時間
を要するという問題があった。さらに、通常は基板を加
熱して蒸着を行うため、レンズ等のガラス部品などのよ
うに熱ショックに弱いものの場合は、徐冷したのち真空
を破って基板の入れ換えをする必要があった。そこで、
蒸着室を大気に開放することなく、連続的に処理する連
続蒸着装置が提案されている。この連続蒸着装置は、た
とえば基板搬入室、蒸着室、基板取出室をそれぞれ別個
に隣接して設け、各室間をゲートバルブを介して連設す
るものである。蒸着室は常に蒸着雰囲気に維持してあ
る。基板を入れる場合は、先ず基板搬入室内に基板を入
れたのち、ここを高真空まで排気する。ついで、ゲート
バルブを空けて基板を蒸着室に移動することにより、蒸
着室の真空雰囲気を破ることなく、基板を蒸着室に搬入
することができる。蒸着終了後は、基板取出室を高真空
に排気したのち、蒸着室−基板取出室間のゲートバルブ
を開けて基板を基板取出室内に移送し、ゲートバルブを
閉じたのち、基板取出室を大気に開放して基板を取り出
す。Conventional technology In vacuum evaporation or sputtering, there is a problem that it takes longer time to set the conditions by drawing a vacuum inside the chamber than in actual evaporation or sputtering (hereinafter, also simply referred to as evaporation). It was Further, since the substrate is usually heated for vapor deposition, in the case of a glass component such as a lens which is susceptible to heat shock, it is necessary to break the vacuum and replace the substrate after slowly cooling. Therefore,
A continuous vapor deposition apparatus has been proposed which continuously processes the vapor deposition chamber without opening it to the atmosphere. In this continuous vapor deposition apparatus, for example, a substrate carry-in chamber, a vapor deposition chamber, and a substrate take-out chamber are separately provided adjacent to each other, and the chambers are connected continuously via a gate valve. The vapor deposition chamber is always maintained in a vapor deposition atmosphere. When loading a substrate, the substrate is first placed in the substrate loading chamber and then evacuated to a high vacuum. Then, by opening the gate valve and moving the substrate to the vapor deposition chamber, the substrate can be carried into the vapor deposition chamber without breaking the vacuum atmosphere of the vapor deposition chamber. After vapor deposition, the substrate unloading chamber is evacuated to a high vacuum, the gate valve between the deposition chamber and the substrate unloading chamber is opened to transfer the substrate into the substrate unloading chamber, the gate valve is closed, and then the substrate unloading chamber is opened to the atmosphere. Open to take out the substrate.
このように、上記連続蒸着装置によれば蒸着室を大気に
開放することなく連続的に蒸着が可能である。しかしな
がら、各室ごとに真空槽を形成してゲートバルブで連結
しなければならないため構造が複雑となり、ゲートバル
ブも非常に高価である。また、ゲートバルブを介して基
板を移送するため、基板の移送機構が複雑となり、高価
格化やメンテナンスの煩雑さを招くばかりか、基板ホル
ダーの形状等にも制御が生じる。As described above, according to the continuous vapor deposition apparatus, vapor deposition can be continuously performed without opening the vapor deposition chamber to the atmosphere. However, since a vacuum chamber must be formed in each chamber and connected by a gate valve, the structure becomes complicated and the gate valve is also very expensive. Further, since the substrate is transferred via the gate valve, the substrate transfer mechanism becomes complicated, resulting in cost increase and complicated maintenance, and control of the shape of the substrate holder and the like.
発明の目的 本発明は、簡単な構成でしかも容易な取扱いで連続して
蒸着やスパッタリング等が可能な薄膜製造装置を提供す
るものである。An object of the present invention is to provide a thin film manufacturing apparatus having a simple structure and capable of continuously performing vapor deposition, sputtering and the like with easy handling.
発明の構成 本発明の薄膜製造装置は、排気系を具えた薄膜堆積室
と、排気系を具え、開口部を介して該薄膜堆積室に連設
された基板ホルダー交換室とを有し;該薄膜堆積室には
基板ホルダーを支持する複数の支持部材を着脱自在に具
えるとともに、該基板ホルダーを基板交換帯域から堆積
帯域へ搬送しさらに基板交換帯域へ戻す回転搬送部材が
配設され;該基板交換帯域には、該支持部材を該回転搬
送部材から開口部まで可逆的に移送するとともに該支持
部材を介して該開口部を気密的に閉塞する移送閉塞部材
が配設されたことを特徴とする。The thin film manufacturing apparatus of the present invention has a thin film deposition chamber having an exhaust system and a substrate holder exchange chamber provided with an exhaust system and connected to the thin film deposition chamber through an opening; The thin film deposition chamber is provided with a plurality of detachable support members for supporting the substrate holder, and is provided with a rotary transport member for transporting the substrate holder from the substrate exchange zone to the deposition zone and back to the substrate exchange zone; In the substrate exchange zone, there is provided a transfer blocking member that reversibly transfers the support member from the rotary transfer member to the opening portion and airtightly closes the opening portion through the support member. And
以下、添付図面に沿って本発明をさらに詳細に説明す
る。Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第1図は本発明を蒸着装置として応用した場合の実施例
を模式的に示す断面図である。蒸着処理室(薄膜堆積
室)11には、回転搬送部材13が設けられている。回転搬
送部材13は第3図に示すように複数個の基板ホルダー17
を載置することができる。なお、第3図では1個の基板
ホルダー17のみを示し、また、細部は省略して図示して
ある。回転搬送部材13はモータ31により回し、基板ホル
ダー17を基板交換帯域34から蒸着帯域(堆積帯域)24へ
移送し、再びこれを基板交換帯域34へ移送する。蒸着帯
域24には蒸発源29が設けられており、この中の蒸着物質
を基板ホルダー17内の基板(図示せず)に向けて蒸着す
る。蒸発源29は真空を破ることなく蒸着物質を補給でき
る自動補給装置を具えたものが好ましい。27はシャッタ
ー、25,25は加熱装置としてのハロゲンランプを示す。
また、15は加熱源としての上部ヒータを示す。FIG. 1 is a sectional view schematically showing an embodiment in which the present invention is applied as a vapor deposition device. A rotary transport member 13 is provided in the vapor deposition processing chamber (thin film deposition chamber) 11. The rotary transfer member 13 has a plurality of substrate holders 17 as shown in FIG.
Can be placed. In FIG. 3, only one substrate holder 17 is shown, and details are omitted. The rotary transfer member 13 is rotated by the motor 31 to transfer the substrate holder 17 from the substrate exchange zone 34 to the vapor deposition zone (deposition zone) 24 and again to the substrate exchange zone 34. An evaporation source 29 is provided in the evaporation zone 24, and the evaporation material therein is evaporated toward a substrate (not shown) in the substrate holder 17. The evaporation source 29 is preferably equipped with an automatic replenishing device that can replenish the vapor deposition material without breaking the vacuum. 27 is a shutter, and 25 and 25 are halogen lamps as a heating device.
Moreover, 15 shows an upper heater as a heating source.
蒸着処理室11は図示していない排気系により高真空に排
気されている。基板交換帯域34で、蒸着処理室11の回転
搬送部材13上に載置された基板ホルダー17は、回転搬送
部材13の回転により逐次移送される。そして、蒸着帯域
24に至るまでに加熱処理などの必要な処理が施されたの
ち、蒸着帯域24に移送される。蒸着帯域24では、駆動系
(図示せず)により基板ホルダー17を回転しながら、蒸
発源29から蒸着材料を蒸着し、所望の薄膜を形成する。
1つの蒸着帯域で複数の蒸着材料を蒸着したり、複数の
蒸着帯域を設けて多層膜とすることもできる。蒸着を終
えた基板ホルダー17は、徐冷されながら、順次基板交換
帯域34まで移送される。The vapor deposition processing chamber 11 is evacuated to a high vacuum by an exhaust system (not shown). In the substrate exchange zone 34, the substrate holder 17 placed on the rotary transfer member 13 of the vapor deposition processing chamber 11 is sequentially transferred by the rotation of the rotary transfer member 13. And the deposition zone
After being subjected to necessary treatments such as heat treatment until reaching 24, they are transferred to the vapor deposition zone 24. In the vapor deposition zone 24, a vapor deposition material is vapor-deposited from an evaporation source 29 while the substrate holder 17 is rotated by a drive system (not shown) to form a desired thin film.
A plurality of vapor deposition materials can be vapor-deposited in one vapor deposition zone, or a plurality of vapor deposition zones can be provided to form a multilayer film. The substrate holder 17 that has completed the vapor deposition is gradually transferred to the substrate exchange zone 34 while being gradually cooled.
次に、基板交換帯域34における蒸着済み基板の取出し、
および新たな基板の搬入について説明する。回転搬送部
材13の基板ホルダー17の保持位置には、架台21の上に着
脱自在に支持リング(支持部材)19が載置されており、
基板ホルダー17が載せられる。支持リング19の外周部は
開口部37よりも大きく形成されており、支持リング19の
上面は開口部37の周囲部の下面39と気密的に当接される
ようになっている。支持リング19の下方には移送閉塞部
材35が配設されている。油圧シリンダ33(押圧部材)に
より移送閉塞部材35を上方向に移動すると、移送閉塞部
材35が基板ホルダーを載置した状態で支持リング19を保
持して持ち上げ、第2図に示すようにこれを開口部37の
周辺面39に押圧する。油圧シリンダ33で押圧されること
により、開口部37は支持リング19を介して移送閉塞部材
35により閉塞される。ついで、基板ホルダー交換室41を
リークして大気圧としたのち、扉43をあけて基板ホルダ
ー17を取り出し、新たな基板を収納した基板ホルダー17
を替りに支持リング21上に載せる。このとき、移動閉塞
部材35により開口部37が閉塞されているので、蒸着処理
室11が大気に露されることがない。次に、図示していな
い排気系により基板ホルダー交換室41を高真空(蒸着処
理室よりも高い圧力)に排気したのち、油圧シリンダ33
により移動閉塞部材35を下降させて、支持シリンダ19を
架台21上に載置する。このときも、開口部37の開口に先
立って基板ホルダー交換室41が高真空に排気されている
ので、蒸着処理室11の圧力雰囲気に実質上影響を与えな
い。Next, taking out the vapor-deposited substrate in the substrate exchange zone 34,
And, loading of a new substrate will be described. At the holding position of the substrate holder 17 of the rotary transport member 13, a support ring (support member) 19 is detachably mounted on a pedestal 21.
The substrate holder 17 is placed. The outer periphery of the support ring 19 is formed to be larger than the opening 37, and the upper surface of the support ring 19 is brought into airtight contact with the lower surface 39 of the peripheral portion of the opening 37. A transfer blocking member 35 is arranged below the support ring 19. When the transfer blocking member 35 is moved upward by the hydraulic cylinder 33 (pressing member), the transfer blocking member 35 holds and lifts the support ring 19 with the substrate holder placed thereon, and as shown in FIG. The peripheral surface 39 of the opening 37 is pressed. By being pressed by the hydraulic cylinder 33, the opening 37 is transferred and closed via the support ring 19.
Blocked by 35. Next, after leaking the substrate holder exchange chamber 41 to atmospheric pressure, the door 43 is opened, the substrate holder 17 is taken out, and the substrate holder 17 containing a new substrate
Place it on the support ring 21 instead. At this time, since the opening 37 is closed by the moving closing member 35, the vapor deposition processing chamber 11 is not exposed to the atmosphere. Next, after the substrate holder exchange chamber 41 is evacuated to a high vacuum (higher pressure than the vapor deposition processing chamber) by an exhaust system (not shown), the hydraulic cylinder 33
The moving block member 35 is lowered by the above, and the support cylinder 19 is placed on the frame 21. At this time as well, since the substrate holder exchange chamber 41 is evacuated to a high vacuum prior to the opening of the opening 37, it does not substantially affect the pressure atmosphere of the vapor deposition processing chamber 11.
以上、真空蒸着装置について説明したが、スパッタリン
グ装置など他の薄膜製造装置の場合も同様である。The vacuum vapor deposition apparatus has been described above, but the same applies to other thin film manufacturing apparatuses such as a sputtering apparatus.
発明の効果 本発明の薄膜製造装置によれば、薄膜堆積室の回転搬送
部材に基板ホルダーを支持する複数の支持部材を設け、
基板ホルダーを基板交換帯域から堆積帯域へ移送して薄
膜を形成したのち、さらに基板交換帯域に戻して基板の
入れ替えを行い、連続的に薄膜を形成する。しかも、こ
の基板の入れ替えに際しては、薄膜堆積室と基板ホルダ
ー交換室とを結ぶ開口部まで移送閉塞部材により上記の
支持部材を移送し、この支持部材を介して移送閉塞部材
により両室を気密的に封鎖し、基板ホルダー交換室を大
気に開放して支持部材に保持された基板ホルダーを取り
出し、新たな基板を収納した基板ホルダーを再び支持部
材に保持させ、次に基板ホルダー交換室を真空に排気し
たのち、移送閉塞部材により支持部材を回転搬送部材ま
で移送してこれに保持させる。これにより、薄膜堆積室
の真空を破ることなく基板の入れ替えを行いながら、連
続的に薄膜を製造することができる。しかも、装置の構
成も簡単で、取扱いやメンテナンスあるいはコストの点
で有利であり、ゲートバルブも不要である。Advantageous Effects of Invention According to the thin film manufacturing apparatus of the present invention, a plurality of supporting members that support the substrate holder are provided on the rotary transfer member of the thin film deposition chamber,
After the substrate holder is transferred from the substrate exchange zone to the deposition zone to form a thin film, the substrate holder is returned to the substrate exchange zone to replace the substrate to continuously form a thin film. Moreover, when the substrates are exchanged, the above-mentioned support member is transferred to the opening connecting the thin film deposition chamber and the substrate holder exchange chamber by the transfer closing member, and both chambers are hermetically sealed by the transfer closing member through this support member. The substrate holder exchange chamber is opened to the atmosphere, the substrate holder held by the support member is taken out, the substrate holder containing the new substrate is again held by the support member, and then the substrate holder exchange chamber is evacuated. After evacuating, the transfer blocking member transfers the support member to the rotary transfer member and holds it. Thus, the thin film can be continuously manufactured while the substrates are exchanged without breaking the vacuum of the thin film deposition chamber. Moreover, the structure of the device is simple, and it is advantageous in terms of handling, maintenance, and cost, and no gate valve is required.
第1図は、本発明の薄膜製造装置の実施例を示す縦断面
図であり、第2図は、この装置の回転搬送部材について
示す斜視図である。 第3図は、基板ホルダー交換時における本発明の薄膜製
造装置の基板ホルダー交換室および基板ホルダー交換室
の近傍を示す一部断面図である。 11……蒸着処理室、13……回転搬送部材 17……基板ホルダー、19……支持部材 21……架台、24……蒸着帯域 29……蒸発源、31……モータ 33……油圧シリンダ、34……基板交換帯域 35……移送閉塞部材、37……開口部 41……基板ホルダー交換室FIG. 1 is a vertical sectional view showing an embodiment of a thin film manufacturing apparatus of the present invention, and FIG. 2 is a perspective view showing a rotary conveying member of this apparatus. FIG. 3 is a partial cross-sectional view showing the substrate holder exchange chamber and the vicinity of the substrate holder exchange chamber of the thin film manufacturing apparatus of the present invention when the substrate holder is exchanged. 11 ... Vapor deposition chamber, 13 ... Rotary transfer member 17 ... Substrate holder, 19 ... Support member 21 ... Platform, 24 ... Vapor deposition zone 29 ... Evaporation source, 31 ... Motor 33 ... Hydraulic cylinder, 34 ... Substrate exchange zone 35 ... Transfer blocking member, 37 ... Opening 41 ... Substrate holder exchange chamber
Claims (1)
え、開口部を介して該薄膜堆積室に連設された基板ホル
ダー交換室とを有し;該薄膜堆積室には基板ホルダーを
支持する複数の支持部材を着脱自在に具えるとともに、
回転して該基板ホルダーを基板交換帯域から堆積帯域へ
搬送しさらに基板交換帯域へ戻す回転搬送部材が配設さ
れ;該基板交換帯域には、該支持部材を該回転搬送部材
から開口部まで可逆的に移送するとともに該支持部材を
介して該開口部を気密的に閉塞する移送閉塞部材が配設
されたことを特徴とする薄膜製造装置。1. A thin film deposition chamber provided with an exhaust system, and a substrate holder exchange chamber provided with an exhaust system and connected to the thin film deposition chamber through an opening; a substrate is provided in the thin film deposition chamber. In addition to being equipped with multiple support members that support the holder,
A rotary transport member is provided that rotates to transport the substrate holder from the substrate exchange zone to the deposition zone and back to the substrate exchange zone; in the substrate exchange zone, the support member is reversible from the rotary transport member to the opening. A thin film manufacturing apparatus, which is provided with a transfer blocking member that transfers the film in an airtight manner and airtightly blocks the opening through the support member.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9595786A JPH0611913B2 (en) | 1986-04-25 | 1986-04-25 | Thin film manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9595786A JPH0611913B2 (en) | 1986-04-25 | 1986-04-25 | Thin film manufacturing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62253768A JPS62253768A (en) | 1987-11-05 |
JPH0611913B2 true JPH0611913B2 (en) | 1994-02-16 |
Family
ID=14151716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9595786A Expired - Fee Related JPH0611913B2 (en) | 1986-04-25 | 1986-04-25 | Thin film manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0611913B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100591799C (en) * | 2005-06-15 | 2010-02-24 | 株式会社爱发科 | Film forming device, thin-film manufacturing apparatus, and film forming method |
-
1986
- 1986-04-25 JP JP9595786A patent/JPH0611913B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS62253768A (en) | 1987-11-05 |
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