TW492181B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
TW492181B
TW492181B TW089109113A TW89109113A TW492181B TW 492181 B TW492181 B TW 492181B TW 089109113 A TW089109113 A TW 089109113A TW 89109113 A TW89109113 A TW 89109113A TW 492181 B TW492181 B TW 492181B
Authority
TW
Taiwan
Prior art keywords
film
semiconductor device
aforementioned
gate
silicon
Prior art date
Application number
TW089109113A
Other languages
English (en)
Chinese (zh)
Inventor
Kenji Yoshiyama
Keiichi Higashitani
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW492181B publication Critical patent/TW492181B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW089109113A 1999-06-10 2000-05-12 Semiconductor device and manufacturing method thereof TW492181B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11163929A JP2000353803A (ja) 1999-06-10 1999-06-10 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW492181B true TW492181B (en) 2002-06-21

Family

ID=15783517

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089109113A TW492181B (en) 1999-06-10 2000-05-12 Semiconductor device and manufacturing method thereof

Country Status (4)

Country Link
US (1) US6479873B1 (enExample)
JP (1) JP2000353803A (enExample)
KR (1) KR100392167B1 (enExample)
TW (1) TW492181B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305302A (ja) * 2001-04-06 2002-10-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100414220B1 (ko) * 2001-06-22 2004-01-07 삼성전자주식회사 공유 콘택을 가지는 반도체 장치 및 그 제조 방법
KR100434495B1 (ko) * 2001-11-10 2004-06-05 삼성전자주식회사 반도체 소자의 제조방법
JP2003152104A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体装置及びその製造方法
KR20030079298A (ko) * 2002-04-03 2003-10-10 삼성전자주식회사 반도체 소자 및 그 제조방법
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
US6881614B2 (en) * 2003-06-20 2005-04-19 Taiwan Semiconductor Manufacturing Company Shared contact for high-density memory cell design
JP4058022B2 (ja) 2004-05-25 2008-03-05 株式会社東芝 半導体装置の製造方法
US7037774B1 (en) 2004-10-21 2006-05-02 Integrated Device Technology, Inc. Self-aligned contact structure and process for forming self-aligned contact structure
CN100389498C (zh) * 2005-06-07 2008-05-21 中芯国际集成电路制造(上海)有限公司 制备cmos图像传感器-混合硅化物的方法
KR100724565B1 (ko) * 2005-07-25 2007-06-04 삼성전자주식회사 코너보호패턴을 갖는 공유콘택구조, 반도체소자, 및 그제조방법들
DE102006004412B3 (de) * 2006-01-31 2007-08-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Ätzselektivität in einer Kontaktstruktur in Halbleiterbauelementen
JP2008078404A (ja) 2006-09-21 2008-04-03 Toshiba Corp 半導体メモリ及びその製造方法
JP2008311457A (ja) * 2007-06-15 2008-12-25 Renesas Technology Corp 半導体装置の製造方法
KR100958625B1 (ko) * 2007-12-26 2010-05-20 주식회사 동부하이텍 반도체 소자의 모니터링 패턴 및 그의 제조방법
US7928577B2 (en) 2008-07-16 2011-04-19 Micron Technology, Inc. Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same
TW201007885A (en) * 2008-07-18 2010-02-16 Nec Electronics Corp Manufacturing method of semiconductor device, and semiconductor device
JP5754334B2 (ja) * 2011-10-04 2015-07-29 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
US20160126336A1 (en) * 2014-10-29 2016-05-05 Globalfoundries Inc. Method of improved ca/cb contact and device thereof
US20230320057A1 (en) * 2022-04-01 2023-10-05 Intel Corporation Recessed transistor terminal via jumpers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250603A (ja) 1995-03-14 1996-09-27 Toshiba Corp 半導体装置及びその製造方法
JPH09326440A (ja) 1996-06-04 1997-12-16 Sony Corp 半導体装置の製造方法
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5677227A (en) * 1996-09-09 1997-10-14 Vanguard International Semiconductor Corporation Method of fabricating single crown, extendible to triple crown, stacked capacitor structures, using a self-aligned capacitor node contact
US5792689A (en) * 1997-04-11 1998-08-11 Vanguard International Semiconducter Corporation Method for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memory
US6008085A (en) * 1998-04-01 1999-12-28 Vanguard International Semiconductor Corporation Design and a novel process for formation of DRAM bit line and capacitor node contacts
US6110818A (en) * 1998-07-15 2000-08-29 Philips Electronics North America Corp. Semiconductor device with gate electrodes for sub-micron applications and fabrication thereof
US6174803B1 (en) * 1998-09-16 2001-01-16 Vsli Technology Integrated circuit device interconnection techniques

Also Published As

Publication number Publication date
US6479873B1 (en) 2002-11-12
KR100392167B1 (ko) 2003-07-22
KR20010014937A (ko) 2001-02-26
JP2000353803A (ja) 2000-12-19

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees