KR100392167B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100392167B1
KR100392167B1 KR10-2000-0026897A KR20000026897A KR100392167B1 KR 100392167 B1 KR100392167 B1 KR 100392167B1 KR 20000026897 A KR20000026897 A KR 20000026897A KR 100392167 B1 KR100392167 B1 KR 100392167B1
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KR
South Korea
Prior art keywords
film
gate electrode
semiconductor device
source
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0026897A
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English (en)
Korean (ko)
Other versions
KR20010014937A (ko
Inventor
요시야마겐지
히가시따니게이이찌
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20010014937A publication Critical patent/KR20010014937A/ko
Application granted granted Critical
Publication of KR100392167B1 publication Critical patent/KR100392167B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR10-2000-0026897A 1999-06-10 2000-05-19 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100392167B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11163929A JP2000353803A (ja) 1999-06-10 1999-06-10 半導体装置およびその製造方法
JP1999-163929 1999-06-10

Publications (2)

Publication Number Publication Date
KR20010014937A KR20010014937A (ko) 2001-02-26
KR100392167B1 true KR100392167B1 (ko) 2003-07-22

Family

ID=15783517

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0026897A Expired - Fee Related KR100392167B1 (ko) 1999-06-10 2000-05-19 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (1) US6479873B1 (enExample)
JP (1) JP2000353803A (enExample)
KR (1) KR100392167B1 (enExample)
TW (1) TW492181B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305302A (ja) * 2001-04-06 2002-10-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100414220B1 (ko) * 2001-06-22 2004-01-07 삼성전자주식회사 공유 콘택을 가지는 반도체 장치 및 그 제조 방법
KR100434495B1 (ko) * 2001-11-10 2004-06-05 삼성전자주식회사 반도체 소자의 제조방법
JP2003152104A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体装置及びその製造方法
KR20030079298A (ko) * 2002-04-03 2003-10-10 삼성전자주식회사 반도체 소자 및 그 제조방법
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
US6881614B2 (en) * 2003-06-20 2005-04-19 Taiwan Semiconductor Manufacturing Company Shared contact for high-density memory cell design
JP4058022B2 (ja) 2004-05-25 2008-03-05 株式会社東芝 半導体装置の製造方法
US7037774B1 (en) 2004-10-21 2006-05-02 Integrated Device Technology, Inc. Self-aligned contact structure and process for forming self-aligned contact structure
CN100389498C (zh) * 2005-06-07 2008-05-21 中芯国际集成电路制造(上海)有限公司 制备cmos图像传感器-混合硅化物的方法
KR100724565B1 (ko) * 2005-07-25 2007-06-04 삼성전자주식회사 코너보호패턴을 갖는 공유콘택구조, 반도체소자, 및 그제조방법들
DE102006004412B3 (de) * 2006-01-31 2007-08-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Ätzselektivität in einer Kontaktstruktur in Halbleiterbauelementen
JP2008078404A (ja) 2006-09-21 2008-04-03 Toshiba Corp 半導体メモリ及びその製造方法
JP2008311457A (ja) * 2007-06-15 2008-12-25 Renesas Technology Corp 半導体装置の製造方法
KR100958625B1 (ko) * 2007-12-26 2010-05-20 주식회사 동부하이텍 반도체 소자의 모니터링 패턴 및 그의 제조방법
US7928577B2 (en) 2008-07-16 2011-04-19 Micron Technology, Inc. Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same
TW201007885A (en) * 2008-07-18 2010-02-16 Nec Electronics Corp Manufacturing method of semiconductor device, and semiconductor device
JP5754334B2 (ja) * 2011-10-04 2015-07-29 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
US20160126336A1 (en) * 2014-10-29 2016-05-05 Globalfoundries Inc. Method of improved ca/cb contact and device thereof
US20230320057A1 (en) * 2022-04-01 2023-10-05 Intel Corporation Recessed transistor terminal via jumpers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250603A (ja) 1995-03-14 1996-09-27 Toshiba Corp 半導体装置及びその製造方法
JPH09326440A (ja) 1996-06-04 1997-12-16 Sony Corp 半導体装置の製造方法
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5677227A (en) * 1996-09-09 1997-10-14 Vanguard International Semiconductor Corporation Method of fabricating single crown, extendible to triple crown, stacked capacitor structures, using a self-aligned capacitor node contact
US5792689A (en) * 1997-04-11 1998-08-11 Vanguard International Semiconducter Corporation Method for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memory
US6008085A (en) * 1998-04-01 1999-12-28 Vanguard International Semiconductor Corporation Design and a novel process for formation of DRAM bit line and capacitor node contacts
US6110818A (en) * 1998-07-15 2000-08-29 Philips Electronics North America Corp. Semiconductor device with gate electrodes for sub-micron applications and fabrication thereof
US6174803B1 (en) * 1998-09-16 2001-01-16 Vsli Technology Integrated circuit device interconnection techniques

Also Published As

Publication number Publication date
US6479873B1 (en) 2002-11-12
KR20010014937A (ko) 2001-02-26
JP2000353803A (ja) 2000-12-19
TW492181B (en) 2002-06-21

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