TW490775B - Method and apparatus for manufacturing an interconnect structure - Google Patents

Method and apparatus for manufacturing an interconnect structure Download PDF

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Publication number
TW490775B
TW490775B TW090109167A TW90109167A TW490775B TW 490775 B TW490775 B TW 490775B TW 090109167 A TW090109167 A TW 090109167A TW 90109167 A TW90109167 A TW 90109167A TW 490775 B TW490775 B TW 490775B
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Taiwan
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base plate
wire
layer
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patent application
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TW090109167A
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English (en)
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Addi B Mistry
Rina Chowdhury
Scott K Pozder
Deborah A Hagen
Rebecca G Cole
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Motorola Inc
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

490775 A7 B7 五、發明説明（ 塵1先前技術之春考 經濟部中央標準局員工消費合作社印製 此况明書已於2000年4月18日在美國歸檔爲專利申請説明 書第 〇9/551，312 號。 發明領域 本發明有關積體電路之封裝，更特別的是有關一不需該 “準在凸塊冶金學下的打線和凸塊之結構和處理。 發明背景 本發明涉及在積體電路晶片上形成包括一打線和一凸塊 互連結構之方法和結構。目前，在半導體工業中，於基墊 上方施加一在凸塊之下的金屬（UBM)，其中該基墊板通常 爲鋁或銅或其合金。該凸塊之下的金屬UBM通常包括一層 鉻，一層鉻銅（CrCu)，一層銅（Cu)，和一層金（Au)在一蒸發 的凸塊打線之下。對一電鍍凸塊而言，該凸塊之下的^屬 UBM通常包括一層鈦鎢氮化物（TiWNx)，一層鈦鎢（丁丨和 一層銅在該打線之下。將此在凸塊冶金學下用做一焊鍚擴 散障礙以獲得良好的黏著性，並且用於減少在該基墊板和 該打線間的應力。 本發明提供一不需凸塊之下的金屬UBM的互連結構，因 而減少處理步驟、製造成本並增加信賴性。在本發明中， 使用實質上相同的基本材料將一打線直接施加至該基墊板 。本發明之優點包括使用實質上相同的基本材料於該打線 和該結合板以降低應力、減少處理步驟和成本，而不會在 該打線和基塾板間產生黏著問題。 附圖之簡要敘诚 -4- 本紙張尺度適用中國國家標準（ CNS ) Α4規格（210 X 297公釐） -------- (請先閲讀背面之注意事項再填寫本頁) -裝-
、1T 斷 發明說明（2 ) 透過範例圖示本發明並且不限於附圖，其中相同的參考 表示類似元件，並且其中： ， " 向圖1 II圖示形成該I連結構的連續方法步驟之橫斷面 ^5圖示如本發明，包括刻該互連結構的連續 之橫__圖； 圖6到8圖示如本發明形成該打線的連續方法步驟之橫 面圖； ” 圖9到：Π圖示如本發明形成一鲜錄結構的連續彳法步驟之 橫斷面圖。 、圖12到13圖示如本發明供進一步形成用於無銲鍚結構的 孩打線上的連續方法步驟之橫斷面圖； 圖14到16圖示如本發明其它具體實例，形成一打線和一 銲鍚結構的連續方法步驟之橫斷面圖；及 圖17A和17B圖示如本發明之本發明應用橫斷面圖。 熟於先前技術者將了解到在圖中的元件係依簡化和清晰 而圖示，並且不必依實際尺寸繪製。例如，在圖中某些元件 相對於其它元件的尺寸可能被放大，以協助提升對本發明 具體實例之了解。 & 附圖之詳細敘 圖1圖示一互連結構1〇，包括一障礙層12,例如妲在 基墊板14的正下方。可使用其它金屬，例如氮化妲，鎢\氮 化鎢，氮化鈦矽，氮化鈕矽，鎳等，做爲障礙材料。使用該 障礙層12以避免在基體内（未顯示）該基墊板14材料的擴散。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝— (請先閱讀背面之注意事項再填寫本頁) . 經濟部智慧財產局員工消費合作社印製 490775 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 最好，該基墊板14的導電基本材料爲銅。然而，該基墊板14 的基本材料也可爲，例如，銅合金，鎳釩，或任何該基本材 料馬導通金屬並且不會與焊鍚材料積極反應而產生一不想 要的效應的材料。例如，該焊鍚中的錫可與該基墊板14的 基本材料，例如銅，起反應以形成一金屬的和脆的錫/銅化 合物。只要該錫不是很需要銅並且有足夠的銅，就可使用 該材料。該基本材料被定義爲要形成該基墊板14所使用最 多的材料。例如，由於銅包括某些額外的摻質元件，銅合 金將佔該基本材料的大多數。 在忒基塾板14正上方有一電介質障礙種籽層或蝕刻停止 層1 6，爲例如爲約5 0毫米層的電漿加強氮化（pEN)層。在該 钱刻停止層16之上爲一被動層18，例如，一層氮氧化矽 (SiON)，厚度約爲450毫米。該互連結構一般包括複數個連 結板14或基墊板，在一晶片上以一電介質材料（未顯示）區隔 ’例如四乙醇正娃酸鹽tetraethyi〇rth〇siiicate(丁E〇s或 Si(OC2H5)4)。該電介質材料也可爲氦摻雜質（fl〇urine· doped)TEOS(FTEOS)或任何低電介質常數的材料（亦即通氣 性氧化物porous oxide)。該結構1〇以一光阻19樣式化，並 且在该基塾板14上方的該被動層1 8被蚀刻，以致於該被動 層1 8超過在該基塾板14 一區域的剩餘厚度爲，例如，約5 〇 毫米。所使用的該蝕刻化學作用可導致該被動層的垂直邊 緣或該被動層1 8的傾斜邊緣，如圖2所示。 、 如圖3所示，將一彈性層20，例如一聚亞胺薄膜，沉積於 該被動層的上方，並且沉積和樣式第二光阻層23。做爲該 -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) •裝· 訂 490775 A7 " "-------------- —_____ 五、發明說明（4 ) 光阻樣式處理的一部份，該聚亞胺薄膜也被樣式化。接著 一光阻剥除測試，留下該聚亞胺薄膜做爲任何進—步被動 触刻的姓刻遮罩。使用一標準姓刻方法同時姓刻該彈性層 2〇和被動層18。蝕刻可導致圖示於圖4八和忉的二具體實二 中。若使用由光阻層23所例示的光阻樣式，該彈性層 2〇和該被動層18的邊緣會終止於大約相同的點，稱爲從邊 緣覆蓋到邊緣的範圍，如圖4A所示。透過使用由光阻層Η 所例示的具有較窄開口的光阻樣式，該被動層18的邊^爲 忒彈性層20所覆盍，如圖4Β所示。在圖4Α和圖4Β兩者中， 該彈性層20和被動層18的邊緣輪廓被圖示爲傾斜的。該彈 性層20和被動層18彎曲的邊緣輪廓間接視圖示於圖2該蝕刻 處理步驟中所使用的該蝕刻化學作用而定，並且直接視圖 示糸圖4Α和4Β中泫银刻處理步驟所使用的該化學作用而定 。在圖3所示的該彈性層20沉積期間，圖2蝕刻該被動層18 中所使用的該蝕刻化學作用決定該彈性層2〇的輪廓。此邊 緣輪廓的優點爲該傾斜牆減少了會陷在該邊緣的污染物的 里。該彈性層20和該被動層1 8的邊緣輪廓可，或者，大約 是垂直面。然而，陷在該邊緣的污染物的量會增加。 在姓刻該彈性層20和該被動層1 8之後，如圖5所示蝕刻該 蚀刻停止層1 6以在該基墊板14上定義一開口。在圖示於圖 5内的該具體實例中，使用該彈性層2〇和該被動層18做爲遮 罩。在圖示於圖4A到4B的該處理步驟的期間和該步驟之後 ’接著執行RF預先清除，以移除形成於該連結板丨4上原有的 金屬氧化物層。此氧化物層的厚度爲，例如，約1〇毫米。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------- 經濟部智慧財產局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 4^0775 A7 B7 五、發明説明（） 5 如圖π於圖6，以不打破眞空的方式將一種籽層丨5濺鍍於 該晶圓10上。該種籽層15係爲實質上與該基墊板丨4的導電 基本材料相同的材料。例如，由於該基墊板14已圖示爲是由 銅基本材料所形成，該種籽層丨5也爲一銅基本材料。如已 對該基墊板14加以敘述過的，只要該材料實質上與該基墊 板14的基本材料相同，可將其它材料使用於該種籽層1 5上 ，例如銅合金，鎳釩，或任何材料，其中該基本材料爲導通 金屬並且不會與該焊鍚材料起反應而產生不想要的效應。 此濺鍍種籽層15的厚度爲，例如，小於1〇〇毫米。一較薄的濺 鍍種籽層1 5的優點爲，在稍後的處理步驟期間，該較薄的 種籽層1 5能有較有效率的蝕刻。該濺鍍種籽層丨5充作本發 明具體實例中該晶圓基體的電子連續性和膠層。 在圖7中，形成一光阻層24。圖8圖示一打線17的形成，係 與該基墊板14連續並且實質上以與該基墊板14相同的導電 基本材料所形成。例如，透過電鍍·、蒸發或濺鍍，經由在該 基土板14之上的開口而形成該打線17。由於已圖示該基塾 板14係以銅基本材料所形成，最好，該打線”的導電基本 材料也爲銅。然而，该打線1 7的基本材料也可爲，例如，銅 合金，鎳釩，或任何材料，其中該基本材料爲導通金屬，不 會與焊鍚材料起反應而產生不想要的效應，並且只要該材 料實質上與該基塾板14的基本材料相同。圖示之該打線17 上層表面高度低於該光阻層24的上層表面高度。該打線17 的厚度最好大到在該裝置的壽命期間内不會整個被該焊鍚 材料消耗掉。例如，對個人通訊產品而言，該打線17大於 -8- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) -裝 經濟部中央標準局員工消費合作社印製 490775 五、發明説明（ 約5微米。 在圖9, 一焊錫層26被電錢或蒸發在該打輯之上。通常 所使用的及材料爲一鬲的鉛’錫，意味著大於⑽重量百分 比的鉛和1 〇重量百分！^的祖 ®刀比的錫；低共熔的鉛/錫，爲63重量百 分比的錯和37重量百分比的錫。其它可能的焊錫爲無錯或 裱保的焊錫，如錫銀、錫銀銅、錫銀鉍等。在圖1〇中，移 除該光阻層24,並且使用標準姓刻方法移除該種杆層15。 圖11孩焊錫層26已使用適於所使用的該焊錫材料的溫度輪 庸以高溫迴焊，並且暴露該焊錫結構供後續的高溫迴焊黏 結。通常由該高溫迴焊方法形成一凸塊或在該打㈣四週 的球狀月豆。在一具體實例中，使用圖示於圖^ ^内的結構做 爲:已控制的可折疊的晶片連接，該電子連接係在該晶粒 和炫基之間’在一覆晶結構上’包括一電子裝置在一半 導體基體内。 在本發明之另—具體實例中，未形成該烊錫層26,並且 暴露該打線供後續黏結至另一結構。因而，在圖8該處理 步驟之後，使用標準蝕刻方法移除該光阻層24,如圖⑵斤 :。使用標準方法蝕刻該種籽層15以形成該打線17，如圖 π於圖13。在该種籽層丨5的蝕刻期間，也蝕刻一部份的該 打線Π。然而，蝕刻的量若不是很不明顯，就是形成該打 線17的材料的量補償了當蝕刻該種籽層15時所蝕刻的該打 線π部份的材料。 圖14到16特別圖示以蒸發形成該打線17。例如，在圖5該 蝕刻方法步驟心後，將一遮罩5丨，例如鉬（M〇iybdenum)， --------^-裝-- (請先閱讀背面之注意事項再填寫本頁) 、11 -9- 經濟部中央榡準局員工消費合作衽印製 490775 A7 ----—_ B7 五、發明説明（7 ) '一~— - 置於該彈性層20上。圖15圖示以蒸發將該打線_成至該 斤要的厚度’其中孩打線17的基本材料實質上與該基塾板 14的基本材料相同。在形成該打線㈤蒸發方法期間，該 材料的已瘵發層5 3也可形成於接著要被移除的該遮罩 1上右有必要，將鉛/錫蒸發於打線17上形成焊錫層丨9， 圖16所不。移除該遮罩5丨並且該焊錫層1 9可能被高溫迴 、于（、後、黏結至另一結構。在圖示於圖14到16的具體實例 中，由於該打線和焊錫層不需電子匯流排，因此不需該種 籽層1 5。 圖17Α到17Β圖示一應用，其中該打線17(不需焊錫層或焊 錫結構）接著附著至另一結構。一半導體基體30，具有一電 子裝置例如’覆晶晶粒，形成於其上，包括如本發明之複 數個互連結構32，電子地連接至該半導體基體3〇。該複數 個互連結構32使用由具有導通濾波器34的絕緣矩陣36所構 成的材料連接至測試板4〇上的複數個導通墊38。當加熱和 加壓時，該導通濾波器34，對準該複數個互連結構32和導 通塾3 8 ’將該複數個互連結構32電子連接至在該測試板4〇 上的複數個導通墊3 8，如圖17Β所示。 该覆晶結構之互連結構製造和封裝的進一步處理步驟通 常包括加熱供焊錫結構或凸塊的高溫迴焊黏結；在基墊板 和半導體結構之電子裝置間形成適當的互連；並且將打線 連結或黏結至一板或半導體結構。這些進一步的處理步驟 爲傳統的並且不需在此重覆敘述。相同地，在此所揭露的 該原則處理步驟可能與其它對那些熟於先前技術者早已很 -10- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) •裝· 、11 ^/75 A7 B7 、發明說明（8 ) :瞭的步驟結合在-起。雖然爲了解釋的目的僅圖示一草 —打，和凸塊’應了解在實務上，先前技術中早已廣泛應 用在單互連結構上製造多個打線和凸塊。 在前述之説明書中，已參考特定具體實例加以敌述本發 j然而’對热於先可技術者而言，可從事各種改良和改 變而不偏離在了述該申請專利€圍中所説明的本發明範嘴 。據此，應以説明的而非限制的方式來看待該説明書和附 圖，並且意圖將所有此種改良包括於本發明範嘴内。 已於上面敘述過關於特定具體實例之利益、其它優點和 對問題的解決方案。然而，制益、優點、對問題的解決 万案和能使得任何利益、優點或解決方案發生或變得更明 白的任何s件不需解釋爲任何或所有該中請專利範圍重要 的、必備的或必要的特色或元件。如在此所使用的該術 語”包括”或任何其它的變化，意圖涵蓋—非除外的包含， 以致於：處理’万法’物件或包括元件表的裝置並不僅包 括那些7C件’但可能包括未清楚地列出或所固有的此處理 ’方法，物件或裝置的其它元件。 裝·-------訂—------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 適 度 張一紙 本 釐一公 197 2 X 10 2 /V 格 規 A4 ls)A N (c 準 標 家 國

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  1. 490775
    經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 1 · 一種覆晶結構，包括； 一半導體基體，包括一電子裝置形成於其上； 一基墊板’在該半導體基體上，並且電氣連接至該電 子裝置； 一障礙層’位於該基墊板和該半導體基體之間；並且 一打線，形成於該基墊板上，並且從該基墊板延伸出 ’其中該打線和基墊板係連續並且由實質上相同的 導電基本材料所形成。 2·如申請專利範圍第1項之覆晶結構，尚包括： 一被動層，在該半導體基體上，其中該被動層定義一 在该基墊板上方的開口，該打線經由此開口而形成。 3 ·如申叫專利範圍第2項之覆晶結構，其中該被動層包括定 義該開口的邊緣，並且其中該被動層和該邊緣爲一彈 性層所覆蓋。 4·如申請專利範圍第3項之覆晶結構，其中該彈性層係由— 聚亞胺薄膜所構成。 5·如申請專利範圍第丨項之覆晶結構，其中該打線被暴露以 供後續的黏結至另一結構。 、 6. 如申請專利範圍第丨項之覆晶結構，尚包括： 一焊錫結構形成於該打線上，其中該焊錫結構被暴霞 供後續高溫迴焊黏至另一結構。 】、路 7. 如申請專利範圍第6項之覆晶結構，其中該焊锡結構係 下列各物中所選出導電材料所形成： :由 、场、踢和· 、錫和銀、以及錫、銀和銅。 σ _ '12- 本紙張尺度適用中_家標準（CNS)A4規_在（21〇 χ 297公爱） AW ---I----二π—-------- (請先閱讀背面之注意事項再填寫本頁) 490775 A8 B8 C8 D8 六、申睛專利範圍 8·如申請專利範圍第1項之覆晶結構，其中該導電基本材料 爲一金屬。 9.如申請專利範圍第7項之覆晶結構，其中該金屬係由下列 各物中所選出：銅、鎳和鎳釩。 1〇· —種製造互連結構之方法，包括： 形成一基塾板； 在泫互連結構上形成一被動層，其中該被動層包括定 義一在該基墊板上的開口的邊緣； 經由該開口在該基墊板上直接形成一打線並且從該基 塾板延伸出；並且 其中該打線和基墊板皆爲連續並且由實質上相同的導 電基本材料所形成。 11 ·如申請專利範圍第10項之方法，其中該打線被暴露供後 續黏結至另一結構。 12 ·如申請專利範圍第1 〇項之方法，尚包括： 在該打線上形成一焊錫結構，其中該焊錫結構被暴露 供後續鬲溫迴焊·黏結至另一結構。 13.如申請專利範圍第1〇項之方法，尚包括： 以一彈性層覆蓋該被動層和該被動層的邊緣。 14 ·如申凊專利範圍第13項之方法，其中該彈性層係由一聚 亞胺薄膜所構成。 15.如申請專利範圍第1〇項之方法，其中形成該打線的步驟 尚包括： (a)透過蒸發將該打線從該基墊板延伸出；使用實質上 相同的導電基本材料做爲該基墊板。 ... -13- _ (請先閱讀背面之注意事項再填寫本頁) · ammmmm —Bi ί 1_1 ·1 ϋ 訂---- 經濟部智慧財產局員工消費合作社印製 本紙張尺度_ +關家標準（CNS;A4規格（210 297公釐）
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US6429531B1 (en) 2002-08-06
KR100818902B1 (ko) 2008-04-04
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CN1473359A (zh) 2004-02-04
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