TW461071B - Semiconductor device and method of producing the same - Google Patents

Semiconductor device and method of producing the same Download PDF

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Publication number
TW461071B
TW461071B TW089122958A TW89122958A TW461071B TW 461071 B TW461071 B TW 461071B TW 089122958 A TW089122958 A TW 089122958A TW 89122958 A TW89122958 A TW 89122958A TW 461071 B TW461071 B TW 461071B
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Taiwan
Prior art keywords
semiconductor
semiconductor wafer
wafer
electrode
mentioned
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TW089122958A
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English (en)
Inventor
Kazuhiko Matsumura
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Matsushita Electronics Corp
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461071 五、發明說明（1) 【發明之背景】 技術箱 jg 本發明有關於半導體裝置及其製造方 層具有LSI之半導體晶 去’尤-有關於積 製造方法。矛屋生電逯接之半導體裝置及其 前技输 ^年來為著使LSI半導體裝置低成本 詖案有半導體裝置其中以面向下之方式人且化，所以处 之LSI或具有由不同之處理所形成之⑻之；“：：功此 置下面：參照圖1 6用來說明上述之習知之LSI A"體裝。 夕二百先，在第1半導體晶片110之上形成第1半導月 之内部電極（第1内邻雷杌、·Μ1_ί驻μ ' 乂弟1牛―體日曰片 内邻雷搞η Γ )和裝片觀塾112，另外在第1 邻電和111上形成第！半導體晶片之障壁金 屬）113，和第2半導體晶片之内部電極（第2内部電極^21’ 上之第2半導體晶片之障壁金屬（第2障壁金屬 接塊123與第2半導體曰ηι?π μ夕屬）22、丄由知 、击社^:牛導體阳片120上之第2内部電極121互相電 第1半導體晶片U〇和第2半導體晶片120之 間充填有絕緣性樹脂丨30，第！半導體晶片11〇和第2半導體 晶片120經由焊接塊；[23和絕緣性樹脂丨3〇形成一體。 肢 第1半導體晶片11 〇被裝片樹脂！ 3 2固定在引線框架之裝 片襯墊1 3 1，和第1半導體晶片1 j 〇之合接襯墊j j 2和引線框 架之外部引線1 3 3經由合接線1 3 4產生電連接。第1半導體 晶片110，第2半導體晶片120·，合接線133，裝片襯墊131 和外部引線1 34之一部份被密封用樹脂1 35封裝。 C:\2D-03DE\90-01\89122958.ptd 第4頁 461071 五、發明說明（2)
下面將參照圖m〜17D用來說明上述之半f 造方法。首先，如圖】7A所示體裝置之I 。片120之内部電極⑴形成焊接塊123 :第:導 金屬_，利用抗_成焊 鍍：來形成焊接塊123。其次以焊接塊123作為逆/齊;電田 濕式蝕刻溶解除去第2障壁金屬122之後，使焯H，利用 打逆流成為半球狀。《次如圖j 7β所示：在第、曾* =3進 110為晶圓狀態時，在第}半導體晶 上 ¥晶片 :使第2半導體晶麵之焊接調和第;以 110之内部電極m-致。其次如圖17C所示H曰曰片 晶月120設置在扪半導體晶片11〇。然後：第2 +導體 接塊1 23熔融，利用焊接用來使第2半導體曰曰=熱使焊 電極121和第i半導體晶片u。之内部電極u曰進J2 =内， 次如圖17D所示，將第丄半導體晶片11〇從晶 口 。二 為個別狀態。最後如圖1 6所示，將第i半導 L为割成 在引線框架之裝片襯墊131，利用線合接使第/半片 11 0之合接襯墊j丨2和引線框架之外部引線丨33 a曰曰 以密封用樹脂1 3 5進行封裝。 订連接’ 但是，依照上述之習知之半導體裝置之構造和 時，因為第1半導體晶片和第2半導體晶片之 二^方法 接塊進行焊接，所以會有下面所述之問題。 疋用焊 (1)因為以面向下方式將第1半導體晶片積層 體晶片’所以晶片只能積層2段。 牛導
C:\2D-CODE\9O-0l\89122958.ptd 第5頁 461071 五、發明說明（3) 使用金屬:塊，：：：：：T層，第2半導體晶片時，因為 (3…妾合時因 尺寸變化，所以Λ 焊接塊依橫方向擴散產生 ^所以要微細化會有困難。 (4)因為通常之半導難 行焊接接合時如牛導體曰曰：之内部電極為Ai，戶斤以要進 如形成Ti—⑸一“等=:成容易擴散之金屬膜’例 μ 2 \因為η微細化困難，所以第1和第2半導體晶片之内部電 诚ί t! π *此電負载容量變大，第1半導體晶片和第2半導 曰曰S之彳§號傳送其延遲會變大而且電力消耗亦變大。 【發明之概要】 因，^發明之目的是解決上述之問題，提供容易微細連 接之问此之半導體襞置及其製造方法，不會使晶片受損 而且可以積層多片之晶片。 本t月.之§申_清專利範圍第1項是一種半導體裝置，具備 有1半導體晶片’具有外部電極和内部電極；和第2半 導體晶片，具有内部電極；在第1半導體晶片，具有間隙 :f層第^半導體晶片’和使内部電極互相電連接；其特 被疋·在第2半導體晶片之内部電極内設置穿通孔，在該 穿通孔内壁以與其他電極絕緣之狀態形成可無電解電鍍之 電極’和以使第1和第2半導體晶片之内部電極之間成為對 f之方式’利用接著劑將第2半導體晶片固定在第1半導體 晶片之外部電極和内部電極以外之部份，第2半導體晶片 之内部電極和穿通孔内壁之電極與第1半導體晶片之内部
C:\2D-C0DE\90-0]\89122958.ptd 第6頁 461071 五、發明說明（4) 電極，經由相同成分之連續金屬產生電連接。 依照此種方式，經由在第2半導體晶片之内部 y
穿通孔’ f口以接著劑積層第!和第2半導體晶片電可以積層 多Ϊ Ϊ晶片而不會使晶片受損。$外，形成在穿通孔内ΐ 之可無電解之電極為Cu、Ni、Au、Pt、Ag .、Sn、Ph、P :導ί 2曰'導體晶片之内部電極和穿通孔内壁之電極與。第1 ::體：片之内部電極’經由相同成分之連續金屬產生電 連，。因此，不使用習知方式之以焊接塊接合，因為利用 鍍直接析出在内部電極之金屬進行接合，所以 生擴散之金屬。 嫩上預先形成使焊劑產 I請專利範圍第2項之半導體裝置是在申請專 H第2半導體晶片之内部電極内之穿通孔之直經小$ +導體晶片和第2半導體晶片之間隙之1/2。依照此種 "式，因為第2半導體晶片之内部電極内之穿通孔之直 裣、小於第1半導體晶片和第2半導體晶片之間隙之i 2 , =以I，確貫的連接。亦即，通常為著使無電解電鍍膜成 長進1等方成長’所以使穿通孔直徑成為間隙之丨/2以 上、’當成長之金屬之電鍍膜接觸在電極上時，因為穿通孔. 未被埋沒’所以電鍍液會殘留在電鍍電極内部。該殘留之 電鍍液成為造成腐蝕之原因，所以上述方式之設定用來使 電鍍液不會殘留在電極内部。 μ申請專利範圍第3項和第4項之半導體裝.置是在申請專利 Ιϋ圍第1項中’將第2半導體晶片積層2個以上之晶片。依
4 6 1 07 1 五、發明說明（5) 照此種方式，因為將第2半導體晶片積層2個以 所以可適於應用在多接腳Ls I。 日日月 申請專利範圍第5項是一種半導體裝置之製造 包含之工程有：在積層於第1半導體晶片之第2半導 之内部電極内設置穿通孔；在穿通孔内壁和背面 = 膜；利用無電解電鍍或蒸著，在穿通孔内壁^益電解 電鍍之電極；以使第i和第2半導體晶片之内部U 為對應之方式’在對第1半導體晶片具有間隙之狀能間將 第2半導體晶片接著固定在第i半導體晶片之外部電：内 部電極以外之部份；和利用無電解電鑛使第曰^ 電極產生電連接。 騷日日片之内部 J照此種方式，因為在第2半導體晶片之 4 置穿通孔，接著固定第j和第2丰導鲰曰 電極内6又 ,5 #,J ^^« I电極和穿通孔内壁之雪&故1 半導體晶片之内部電極產生電連接，戶斤以可 ，、第 =不會使晶片受損。另夕卜，因為利用無電解；； 者在穿通孔内壁形成可無電解電鍍之電極 H ^ 知方式之以焊接塊接合，不需要在晶 形成使焊劑產生擴散之金屬。作為電 =二員先
Cu、Au、Pt、Ag、Sn、pb、c〇 等。另夕，：：使用 接塊之擴散，戶斤以微細之連接變為容易，可 接腳LSI。另外，LSI晶片間之接合為單側之、，應^在多 晶圓狀態進行連接，可以使成本降低。 '，，坐由以
C:\2D-〇®E\90_01\89122958.ptd
461071 五、發明說明（6) 申請專利範圍第6、7、8項之半導體裝置之製造方法分 別具有與申請專利範圍第2、3、4項同樣之效果。 【較佳實施例之說明】 下面將根據圖1〜圖1 5用來說明本發明之實施形態。圖1 是本發明之實施形態之半導體裝置之剖面圖，圖2是圖1之 主要部份擴大圖，圖3〜圖1 5是工程別剖面·圖，用來表示 本發明之實施形態之半導體裝置之製造方法。 在圖1和圖2中，元件編號1是第1半導體晶片，2是半導 體晶片之保護膜，3是第1半導體晶片之外部電極，4是第1 (. 半導體晶片之内部電極，5是接著劑，6是穿通孔，7是第2 I 半導體晶片，8是第2半導體晶片之内部電極，9是第3半導 體晶片，1 0是第3半導體晶片之内部電極，1 1是第2半導體 晶片之氧化膜，1 2是第3半導體晶片之氧化膜，1 3是第2半 導體晶片之電鍍電極（第2電鍍電極），14是第3半導體晶片 之電鍍電極（第3電鍍電極），15是電鍍電極（第2金屬），16 是裝片樹脂，1 7是引線框架之引線，1 8是引線框架之裝片 襯墊，1 9是合接線，2 0是密封樹脂，2 1是由第2半導體晶 片形成之晶圓，2 2是由第3半導體晶片形成之晶圓，2 3是 無電解電鍍液，24是無電解電鍍槽，25是電鍍金屬膜（第1 (I 金屬），2 6是抗蝕劑，2 7是蝕刻液，2 8是蝕刻槽，2 9是第1 半導體晶片之晶圓，3 0是彈性夾，3 1是彈性夾之真空孔， 3 2是切片之溝，3 3是絕緣樹脂，3 4是氧化膜。 如圖1所示，具有外部電極3和内部電極4之第1半導體晶 片1和第2、第3半導體晶片7、9，以具有間隙以狀態，除
C:\2D-CDDE\90-01\89122958.ptd 第 9 頁 461071 、發明說明（7) :外Π極3 =電極4、8、10之部份外，被接著劑5固 μ . ^ '第3半導體晶片7、9在第2、第3半導體曰 ::電極8、1。内具有穿通孔6達曰曰 匕穿3Γ二和Λ2、第3半導體晶片7、9之背面形成有 件互相H 氧化膜11、12，用來保持與内部元 進行：：圖1和圖2所示，在穿通孔内壁形成有可以 二：無，_之電極13之〜，了以 孔6盥〇證·！ i第2、第3半導體晶片之内部電極8、1 0和穿通 電铲電: f Γ晶片之外部電極4，'經由相同成分之連續 电緩電極15產生電連接。 貝 圖=:明上=;之半導體裝置之製造方法，首先如 曰A 3B所不，利用雷射在由第2、第3半導體晶片構成之 直徑1 〇 22之第2 «1第3半導體晶片之内部電極8、1 0進行 二// m程度之穿通孔6之開孔。内部電極之尺寸可以為 由s ϋ道其次曰如圖4a、4B所*，在穿通孔6之側面和 2 % 第3半導體晶片構成之晶圓21、22之背面，形成第 用、導體晶片之氧化膜11、12。該氧化膜11 42在利 :無：：電鑛法形成電極時’成為用來與半導體晶片之内 4凡件產生絕緣之絕緣膜。 =如圖5A、5B所示’在由第2、第3之半導體晶片構成 :am ' 22和穿通孔6 ’利用無電解電鍍在晶圓全面形 鑛金屬膜25。例如’當利用無電解電鍵所形成之電鑛 至屬膜25為Ni之情況時，將纟第2、3 +導體晶片構成之晶 圓21、22浸潰到氯化紅之溶液，纟晶圓全面附著作為無電
C:\2D-00DE\90-01\89122958.ptd 第10頁 461071
解電鍍核之鈀後，浸潰到無電解N i電鍍液，用來形成 為程度之Ni電鍍金屬膜25。其次如圖6A、6b 、 由第2、第3半導體晶片構成之晶圓21、22之第2、第^车道 體^曰片之内部電極8、1 0和穿通孔6，形成抗蝕劑圖型萨 經由抗飯劑除去電鍍金屬膜25。 θ
士其次，如圖7Α、7Β所示，將由第2、第3半導體晶 抗蝕劑26形成有蝕刻圖型）構成之晶圓21、22浸漬到蝕 槽28中之蝕刻液27，用來對電鍍金屬膜25進行溶解蝕刻。 例如在電鍍金屬膜為N i之情況時，利用2 〇 %鹽酸溶液用 ==其次如一 第3半導體晶片構成）之抗蝕劑2 6，藉以形 成第、苐3電鑛電極13、14。其次如圖9A、9B所示，對由 第2、第3半導體晶片構成之、22 割成各個晶片。 ^ ^ 其次如圖1 0所示，在由第丨半導體晶片j構成之半導晶圓 29之後，塗布環氧樹脂、聚醯亞胺樹脂、.丙
成為在裝載第2半導體晶片7之位置不會阻二 一曰曰片之内部電極4和外部電極3之方式。其次如圖j J 所示在由第1半導體晶片構成之晶圓2 9之塗布有接著劑5 之區域、’以使内部電極4、8之間成為一致之方式，利用彈 )生夾3 0以真空吸著之狀態，面向上的設置第2半導體晶片 7 ° ’利用彈性夾3()之加熱用來使接著劑5硬化藉以將 第2丰V體晶片7固定在由第】半導體晶片構成之晶 上。加熱溫度為1 〇 〇 °c〜3 〇 〇它程度。内部電極4、8之大小
C:\2D-CODE\90-01\89]22958.p td 第11頁 461071 五、發明說明（9) --- 為數□〜100 □程度’小於用以連接第2半導體曰 7和由第1半導體晶片構成之晶圓29所用之電極。另外阳〜 時之第1半導體晶片丨和第2半導體晶片7之表面間之間隙= 數// m到1 00 # m。另外，接著劑5被配置成不會流到^部電 極4、8之表面。經由重複進行此種工程，可以在由第半 導體晶片構成之晶圓29上利用接著劑5固定多個之第2本 另外，如圖1 2所示，在第2半導體晶片7上塗布環氧樹 脂、聚醯亞胺樹脂、丙烯酸樹脂等之接著劑5，.使其' 以裝載第3半導體晶片9之位置不會阻塞内部電極8。其次 如圖1 3所示，在第2半導體晶片7之塗布有接著劑5之^久 域，以使内部電極8、】〇之間成為一致之方式，利用^ 夾30以真空吸著之狀態而向上的設置第3半導體晶片9。麸 後利用彈性夾30之加熱使接著劑5硬化，用來將第 ^ 晶片9固定在第2半導體晶片7上。 等體 其次如圖14A、14B所示，將由第1半導體晶片構成之曰 圓29浸潰到無電解電鍍槽24 ’用來使從形成在第j半： 晶片之内部電極4和第2、第3半導體晶片之内部電極8、i 之第2、第3電鍍電極】3、14析出之電鍍金屬，成為— 形成電鍍電極15。利用電鍍電極15使第2半導體晶片丄 電極4和第2、第3半導體晶片7、9之内部電極8產 電連接。這時，使無電解電鍍液23浸入到由第i半導 片構成之晶圓2 9和第2、第3半導體晶片7、9之間隙 孔6。例如，在第1半導體晶片之内部電極4為乂丨，進行無
461071 五、發明說明（ίο) - 電解電鑛析出之金屬為N i之情況车 酸等之溶液，在除去第！半導月體兄曰時片’夕首先浸潰到石肖酸、破 之氧化膜後，以鋅等替換以面曰日。片之内部電極4之Μ表面 2、第3半導體晶片7、9之第2、面另外，使用與形成在第 無電解電鍍液’在第2、第3第鍍電極13、U相同之 解電鍵之金屬，可以以相同 、！4上亦析出無電 3半導體晶月之内部電極4、8 ^鐘金屬連接第1、第2、第 表面更進行金屬之無電解 。這時在電鑛金屬Ni之 合接線等接合到外部電極3上又日、^以用來提高可靠度，和使 浸潰到各種溶液之處理之 夺了以大幅的提高良率。在 然後，實施下一個i處理'利水等之溶液進行洗淨， 之以焊接塊接合，而是利用:此種方式，不是習知方式 極之金屬進行接合，所以 …、電解電鍍直接析出在A1電 成用以使焊劑產生擴散之々^要習知方式之在A1電極上形 之晶片之接合一起進行接人 和在晶圓狀態可以使全部 率，和以低成本實現高二=以可以大幅的提高生產效 其次如㈣所示；=之連接。 行切片使其分離成為第j丰2導體晶片構成之晶圓2 9進 第1半導體晶片1之前，對第片1。其巾，在分離成為 檢測，第i半導體晶片體晶片之外部電極3進行（ 片上可以以接合之狀態進行特:晶:7及第3半導體晶 3 3设在側部。 、 取—。另夕卜，將絕緣樹脂 其久’如圖1和圖2所_ 2、第3半導體晶片7 J哲利用裝片樹脂16使接合有第 第1半導體晶片"妾著在引線框架 461071
五、發明說明（π) 電極3和引線框 也、封和封裝。這 A 1 入到第1半導體 之裝片襯墊1 8，利用合接線1 9連接第1外部6 架之引線1 7，最後利用密封樹脂2 〇進行密封 時，密封樹脂2 0在樹脂之注入模型時，注 晶片1和第2半導體晶片7及第3半導體晶片9之 =$ -外，樹脂之注入到第1半導體晶片i和第2半導^曰二 半導體晶片9之間隙之進行亦可以在以與封裝之g封 不同之絕緣樹脂16進行密封之前。另外，在第i 二曰曰 片1和第2半導體晶片7及第3半導體晶片9之間隙亦可二= 為未注入有樹脂之狀態。另外’在積層之半導體晶片中， 對於第1半導體晶片’内部電極之位置關係假如電路上 沒有問題時，則面向上或面向下之任何„方约可。 依照上述方式之實施形態時，在第2、第3半導體晶片之 内部電極8、1 〇内設置穿通孔6，對第1和第2、第3之% 半導 體晶片1、7、9進行接著固定，因為利用無電解電鑛用來 電連接第2、苐3半導體晶片之內部電極8、和穿通孔内 壁之第1金屬25(電鍍電極13)與第1半導體晶片之内部電極 4 ’所以可以積層多片之晶片而不會使晶片受損。另外， 因為在穿通孔内壁利用無電解電鍍或蒸著形成可無電解電 鍍之第1金屬2 5 (電.鍍電極1 3 )，所以不使用習知方式之以 悍接塊接合，不需要在晶片之内部電極上預先形成使焊劑 產生擴散之金屬。另外，因為沒有焊接塊之擴散，所以微 細之連接變為容易’可以適於應用在多接_LS I。作為第1 金屬25(電鍍電極13)者例如可以使用Cu、Ni、Au、Pt、Ag 、Sn、Pb、Co 等。
C:\2D.00DE\90_Gl\89122958.ptd 第14頁 461071 五、發明說明（12) 亦5 iU 2笛t導體晶片之内部電極8内之穿通孔6之直徑 ' ;第1半導體晶片1和第2半導辨曰g 7夕鬥隙之 1/2。亦即，在圖2中，日哲0弟2牛導體日日片7之間隙之 穿通孔之直徑，b是第第2半導體晶片之内部電極内之 隙。當^/2時曰片和第2半導體晶片之間 6之前，因為與其他電極//屬（電鍍電極⑸埋沒穿通孔 之電鍍電極13等)接觸，所屬（第2半導體晶片 液。當a Sb/2時，在盥並仙在穿通孔6之内部殘留電鍍 之前，穿通孔被電鍍金屬埋：電=成J之電鑛金屬接觸 殘留電鍍液，可以確實的連接。因此，在穿通孔6内不會 另外，以上所示者是積層第2、 但是亦可以將第2半導體 =曰曰片之情況， 連接有第2半導體晶片 積日雕2 =上之晶片。另外， 外，亦可以構成為電路基板^導肢日日片，除了晶圓之狀態 【元件編號說明】 1 :第1半導體晶片 半導體晶片之保護膜 第1半導體晶片外部電極 第1半導體晶片内部電極 接著劑 穿通孔 第2半導體晶片 第2半導體晶片之内部電極 第3半導體晶片
C:\2D-C0DE\90-0J\89122958 ntd 第15頁 461071
五、發明說明（13) 10 第3半導體晶片 之 内 部 電 極 11 第2半導體晶片 之 氧 化 膜 12 第3半導體晶片 之 氧 化 膜 13 第2半導體晶片 之 電 鍍 電 極 14 第3半導體晶片 之 電 鍍 電 極 15 電鍍電極 16 裝片樹脂 17 引線框架之引 泉 18 引線框架之裝 片襯墊 19 合接線 20 密封樹脂 21 .22 、 29 :晶圓 23 無電解電鍍液 24 無電解電鍍槽 25 電鍍金屬膜 26 抗餘劑 27 餘刻液 28 餘刻槽 30 彈性夾 31 彈性夾之真空孔 32 切片之溝 33 絕緣樹脂 34 氧化膜 C:\2D-CODE\90-01\89122958.pld 第16頁

Claims (1)

  1. 461071 六、申請專利範圍 1，一種半導體裝置，具僙有：第丨 部電極和内部電極；和第2丰遂辦 日日 八有卜 在上述之第1半導體// = = :部電極； 體晶片、，、和使内部電極互相電連接；其特徵是：+導 f上述之第2半導體晶片之内部電 该穿通孔内壁以與其他電極絕 芽通孔，在 之電極，和以使上述之第!和第2半導日曰:片：内、：：電鍍 =為對應之方式’利用接著劑將上述：第2 °極之 固疋在上述第1半導體晶片之外導體曰曰片 部份，上述之第2半導體曰σ電極以外之 卞守脰日日片之内部電極和穿 上述電極與上述之第！半導體晶片之内部電極，土之 成分之連續金屬產生電連接。 >，二由相同 2 ·如申》月專利範園第【項之半導體， 體晶片之内部電極内之穿通 、具中將弟2.半導 導體晶片和第2半導體Λ通 3. 如申明專利範圍第i項之半導體裝置，复 J體晶片同樣構造之第3半導體晶片同樣的積層：二半 第2半導體晶片。 w增在上述之 4. 如申料利範圍第！項之半導體裝置， 導體晶片同樣構造之多個半導體晶片字，、第2半( 第2半導體晶片。 J谓層在上述之、 5. —種半導體裝置之製造方法，其特徵是所人 有：在積層於第1半導體晶片之第2半導體曰 3之工種 内設置穿通孔；在上述之穿通孔内壁和背：形成：：】極 她 第19頁 C: \2D-C0DE\90-01 \89122958.ptd 4 6 107 -------- — 六、申請專利範園 利用無電解電铲 — 電鍍之電極；g著在上述之穿通孔内壁形成可無電解 之間成為對應=使上述之第1和第2半導體晶片之内部電極 隙之狀態，^上方式’在對上述之第1半導體晶片具有間 導體晶片之外邱述之第2半導體晶片接著固定在上述第1半 解電鑛使上述之H和/9部電極以外之部份；和利用無電 之上述電極愈 ¥體晶片之内部電極和穿通孔内壁 接。 〇上述之第1半導體晶片之内部電極產生電連 丄6 ·如申清專利範圍第5項之半導體裝置之制1 甘 中將第2半導體a ΰ々如广千¥肽装置之衣造方法，其 為小於第1丰ί: 電極内之穿通孔之直徑設定成 7 Υ ί +蛉體晶片和第2半導體晶片之間隙之1 /2。 .。申請專利範圍第5項之半導體裝置之製造 I 層：Ϊ ί2半：體晶片同樣構造之第3半導體晶片同樣的積 層在上述之第2半導體晶片。 8，如申請專利範圍第5項之半導體裝置之製造方法，其 ::與第2半導體晶片同樣構造之多個半導體晶片同樣： 積層在上述之第2半導體晶片。
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