TW442797B - Integrated memory with a differential read-amplifier - Google Patents
Integrated memory with a differential read-amplifier Download PDFInfo
- Publication number
- TW442797B TW442797B TW088115908A TW88115908A TW442797B TW 442797 B TW442797 B TW 442797B TW 088115908 A TW088115908 A TW 088115908A TW 88115908 A TW88115908 A TW 88115908A TW 442797 B TW442797 B TW 442797B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- bit line
- memory cell
- during
- bit lines
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 claims description 62
- 238000000605 extraction Methods 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 6
- 101150086396 PRE1 gene Proteins 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 5
- 208000023414 familial retinal arterial macroaneurysm Diseases 0.000 description 5
- 210000004907 gland Anatomy 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 101150065808 pre3 gene Proteins 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19844479A DE19844479C1 (de) | 1998-09-28 | 1998-09-28 | Integrierter Speicher mit einem differentiellen Leseverstärker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW442797B true TW442797B (en) | 2001-06-23 |
Family
ID=7882539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088115908A TW442797B (en) | 1998-09-28 | 1999-09-15 | Integrated memory with a differential read-amplifier |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6351422B2 (enExample) |
| EP (1) | EP1118081B1 (enExample) |
| JP (1) | JP4377068B2 (enExample) |
| KR (1) | KR100574592B1 (enExample) |
| CN (1) | CN1162864C (enExample) |
| DE (2) | DE19844479C1 (enExample) |
| TW (1) | TW442797B (enExample) |
| WO (1) | WO2000019442A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3447640B2 (ja) * | 1999-12-28 | 2003-09-16 | 日本電気株式会社 | 半導体記憶装置 |
| US6848970B2 (en) * | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US7059948B2 (en) * | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
| DE10062110B4 (de) * | 2000-12-13 | 2009-04-09 | Qimonda Ag | Integrierter Speicher mit einem Zellenfeld und Ladungsausgleichseinrichtungen sowie Verfahren zum beschleunigten Schreiben eines Datums in einen integrierten Speicher |
| JP2003016777A (ja) * | 2001-06-28 | 2003-01-17 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| US6631093B2 (en) * | 2001-06-29 | 2003-10-07 | Intel Corporation | Low power precharge scheme for memory bit lines |
| DE10135814C2 (de) * | 2001-07-23 | 2003-09-18 | Infineon Technologies Ag | Halbleiterspeicher mit Precharge-Steuerung |
| US6876567B2 (en) * | 2001-12-21 | 2005-04-05 | Intel Corporation | Ferroelectric memory device and method of reading a ferroelectric memory |
| US6587367B1 (en) * | 2002-03-19 | 2003-07-01 | Texas Instruments Incorporated | Dummy cell structure for 1T1C FeRAM cell array |
| US7023243B2 (en) * | 2002-05-08 | 2006-04-04 | University Of Southern California | Current source evaluation sense-amplifier |
| US6721217B2 (en) * | 2002-06-27 | 2004-04-13 | Texas Instruments Incorporated | Method for memory sensing |
| US6831871B2 (en) * | 2002-12-30 | 2004-12-14 | Intel Corporation | Stable memory cell read |
| US6839294B2 (en) * | 2003-03-03 | 2005-01-04 | Windbond Electronics Corporation | Memory device with high charging voltage bit line |
| US7130233B2 (en) * | 2003-03-21 | 2006-10-31 | Mediatek Incorporation | Sensing circuit for single bit-line semiconductor memory device |
| DE102005029872A1 (de) * | 2005-06-27 | 2007-04-19 | Infineon Technologies Ag | Speicherzelle, Lesevorrichtung für die Speicherzelle sowie Speicheranordnungen mit einer derartigen Speicherzelle und Lesevorrichtung |
| CA2682469A1 (en) | 2007-03-30 | 2008-10-09 | The Cleveland Clinic Foundation | Method of treating ischemic disorders |
| WO2009079451A2 (en) | 2007-12-14 | 2009-06-25 | The Cleveland Clinic Foundation | Compositions and methods of promoting wound healing |
| US20120283315A1 (en) | 2009-08-28 | 2012-11-08 | Penn Marc S | Sdf-1 delivery for treating ischemic tissue |
| CN101714401B (zh) * | 2009-11-06 | 2013-01-02 | 东南大学 | 用以增强存储单元阵列容量和密度的亚阈值敏感放大电路 |
| US8320209B2 (en) | 2010-05-05 | 2012-11-27 | Stmicroelectronics International N.V. | Sense amplifier using reference signal through standard MOS and DRAM capacitor |
| CN112863581B (zh) * | 2016-09-09 | 2024-12-17 | 硅存储技术公司 | 用于读取阵列中的闪存单元的带位线预充电电路的改进读出放大器 |
| US9881676B1 (en) | 2016-10-11 | 2018-01-30 | Sandisk Technologies Llc | Sense amplifier with program biasing and fast sensing |
| US10976589B2 (en) | 2018-04-17 | 2021-04-13 | Himax Display, Inc. | Display panel having a patterned light shielding layer protected by a protective structure |
| KR102653251B1 (ko) * | 2018-09-07 | 2024-04-01 | 에스케이하이닉스 주식회사 | 고속 데이터 리드아웃 장치 및 그를 이용한 씨모스 이미지 센서 |
| KR102279048B1 (ko) | 2020-04-06 | 2021-07-16 | 연세대학교 산학협력단 | 저항성 메모리용 고속 고안정성을 가진 혼합형 감지 증폭기 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4118847A1 (de) * | 1990-06-08 | 1991-12-12 | Toshiba Kawasaki Kk | Halbleiterspeicheranordnung mit ferroelektrischem kondensator |
| US5241503A (en) | 1991-02-25 | 1993-08-31 | Motorola, Inc. | Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers |
| DE4228212C2 (de) * | 1991-09-19 | 1994-11-24 | Siemens Ag | Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betreiben |
| JPH0785675A (ja) * | 1993-09-17 | 1995-03-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR0171954B1 (ko) * | 1995-06-30 | 1999-03-30 | 김주용 | 데이타 버스 구동 회로 |
| JPH10106286A (ja) | 1996-09-24 | 1998-04-24 | Mitsubishi Electric Corp | 半導体記憶装置およびそのテスト方法 |
| US5828612A (en) * | 1997-10-27 | 1998-10-27 | Motorola, Inc. | Method and circuit for controlling a precharge cycle of a memory device |
-
1998
- 1998-09-28 DE DE19844479A patent/DE19844479C1/de not_active Expired - Fee Related
-
1999
- 1999-09-13 KR KR1020017003975A patent/KR100574592B1/ko not_active Expired - Fee Related
- 1999-09-13 WO PCT/DE1999/002888 patent/WO2000019442A1/de not_active Ceased
- 1999-09-13 DE DE59903679T patent/DE59903679D1/de not_active Expired - Fee Related
- 1999-09-13 EP EP99969821A patent/EP1118081B1/de not_active Expired - Lifetime
- 1999-09-13 JP JP2000572856A patent/JP4377068B2/ja not_active Expired - Fee Related
- 1999-09-13 CN CNB998114456A patent/CN1162864C/zh not_active Expired - Fee Related
- 1999-09-15 TW TW088115908A patent/TW442797B/zh not_active IP Right Cessation
-
2001
- 2001-03-28 US US09/820,235 patent/US6351422B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20010038562A1 (en) | 2001-11-08 |
| KR20010079947A (ko) | 2001-08-22 |
| EP1118081B1 (de) | 2002-12-04 |
| CN1162864C (zh) | 2004-08-18 |
| WO2000019442A1 (de) | 2000-04-06 |
| DE59903679D1 (de) | 2003-01-16 |
| EP1118081A1 (de) | 2001-07-25 |
| US6351422B2 (en) | 2002-02-26 |
| DE19844479C1 (de) | 2000-04-13 |
| KR100574592B1 (ko) | 2006-04-28 |
| CN1322360A (zh) | 2001-11-14 |
| JP4377068B2 (ja) | 2009-12-02 |
| JP2002526880A (ja) | 2002-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |