TW436949B - Method and apparatus for wire bonded package for integrated circuits - Google Patents

Method and apparatus for wire bonded package for integrated circuits Download PDF

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Publication number
TW436949B
TW436949B TW87115383A TW87115383A TW436949B TW 436949 B TW436949 B TW 436949B TW 87115383 A TW87115383 A TW 87115383A TW 87115383 A TW87115383 A TW 87115383A TW 436949 B TW436949 B TW 436949B
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TW
Taiwan
Prior art keywords
ball
bonding
metal wire
substrate
ring
Prior art date
Application number
TW87115383A
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English (en)
Chinese (zh)
Inventor
John W Orcutt
Original Assignee
Texas Instruments Inc
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Publication date
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Publication of TW436949B publication Critical patent/TW436949B/zh

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
TW87115383A 1997-09-19 1998-09-16 Method and apparatus for wire bonded package for integrated circuits TW436949B (en)

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US5953997P 1997-09-19 1997-09-19

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US (1) US6194786B1 (enExample)
EP (1) EP0903780A3 (enExample)
JP (1) JPH11251355A (enExample)
KR (1) KR19990029932A (enExample)
SG (1) SG68074A1 (enExample)
TW (1) TW436949B (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8330270B1 (en) 1998-06-10 2012-12-11 Utac Hong Kong Limited Integrated circuit package having a plurality of spaced apart pad portions
US7226811B1 (en) 1998-06-10 2007-06-05 Asat Ltd. Process for fabricating a leadless plastic chip carrier
US6989294B1 (en) 1998-06-10 2006-01-24 Asat, Ltd. Leadless plastic chip carrier with etch back pad singulation
US6933594B2 (en) * 1998-06-10 2005-08-23 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation
US7271032B1 (en) 1998-06-10 2007-09-18 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation
US7270867B1 (en) 1998-06-10 2007-09-18 Asat Ltd. Leadless plastic chip carrier
US7247526B1 (en) 1998-06-10 2007-07-24 Asat Ltd. Process for fabricating an integrated circuit package
US6635957B2 (en) * 1998-06-10 2003-10-21 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation and die attach pad array
US6229200B1 (en) 1998-06-10 2001-05-08 Asat Limited Saw-singulated leadless plastic chip carrier
US6872661B1 (en) 1998-06-10 2005-03-29 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation and die attach pad array
JP2000260809A (ja) * 1999-03-12 2000-09-22 Toshiba Corp 半導体装置のパッケージ
US6735651B1 (en) * 1999-07-30 2004-05-11 International Business Machines Corporation Multi-chip module having chips coupled in a ring
US6518663B1 (en) * 1999-08-30 2003-02-11 Texas Instruments Incorporated Constant impedance routing for high performance integrated circuit packaging
JP2001168223A (ja) * 1999-12-07 2001-06-22 Fujitsu Ltd 半導体装置
US6621280B1 (en) * 2000-06-27 2003-09-16 Agere Systems Inc. Method of testing an integrated circuit
US6525553B1 (en) * 2000-09-11 2003-02-25 St Assembly Test Services Ltd. Ground pin concept for singulated ball grid array
US6770963B1 (en) * 2001-01-04 2004-08-03 Broadcom Corporation Multi-power ring chip scale package for system level integration
DE10139985B4 (de) 2001-08-22 2005-10-27 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiterchip sowie Verfahren zu seiner Herstellung
US7367014B2 (en) * 2001-10-24 2008-04-29 Bea Systems, Inc. System and method for XML data representation of portlets
US6674176B2 (en) * 2002-02-20 2004-01-06 Lsi Logic Corporation Wire bond package with core ring formed over I/O cells
US6777803B2 (en) * 2002-08-28 2004-08-17 Lsi Logic Corporation Solder mask on bonding ring
US7732914B1 (en) 2002-09-03 2010-06-08 Mclellan Neil Cavity-type integrated circuit package
CN1723557A (zh) * 2002-12-10 2006-01-18 皇家飞利浦电子股份有限公司 高密度封装的互连电源和地线条及其方法
US6815836B2 (en) * 2003-03-24 2004-11-09 Texas Instruments Incorporated Wire bonding for thin semiconductor package
TWI242275B (en) * 2003-05-16 2005-10-21 Via Tech Inc Multi-column wire bonding structure and layout method for high-frequency IC
CN100336218C (zh) * 2003-08-25 2007-09-05 威盛电子股份有限公司 一种高频集成电路多排线打线结构及方法
CN1332445C (zh) * 2003-10-09 2007-08-15 威盛电子股份有限公司 一种高频集成电路多排线打线结构
US7009286B1 (en) 2004-01-15 2006-03-07 Asat Ltd. Thin leadless plastic chip carrier
US7411289B1 (en) 2004-06-14 2008-08-12 Asat Ltd. Integrated circuit package with partially exposed contact pads and process for fabricating the same
US7091581B1 (en) 2004-06-14 2006-08-15 Asat Limited Integrated circuit package and process for fabricating the same
US7595225B1 (en) 2004-10-05 2009-09-29 Chun Ho Fan Leadless plastic chip carrier with contact standoff
US7868468B2 (en) * 2004-11-12 2011-01-11 Stats Chippac Ltd. Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates
TWI368974B (en) * 2004-11-12 2012-07-21 Chippac Inc Ball-on-trace wire bond interconnection
US7358119B2 (en) * 2005-01-12 2008-04-15 Asat Ltd. Thin array plastic package without die attach pad and process for fabricating the same
JP4558539B2 (ja) * 2005-03-09 2010-10-06 日立協和エンジニアリング株式会社 電子回路用基板、電子回路、電子回路用基板の製造方法および電子回路の製造方法
US7348663B1 (en) 2005-07-15 2008-03-25 Asat Ltd. Integrated circuit package and method for fabricating same
US7410830B1 (en) 2005-09-26 2008-08-12 Asat Ltd Leadless plastic chip carrier and method of fabricating same
US7701049B2 (en) * 2007-08-03 2010-04-20 Stats Chippac Ltd. Integrated circuit packaging system for fine pitch substrates
US7911040B2 (en) * 2007-12-27 2011-03-22 Stats Chippac Ltd. Integrated circuit package with improved connections
US8106474B2 (en) * 2008-04-18 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1224562A (en) * 1967-05-16 1971-03-10 Texas Instruments Inc An etching process
FR2573272A1 (fr) * 1984-11-14 1986-05-16 Int Standard Electric Corp Procede de realisation d'un substrat comportant un conducteur coaxial
DE3786314D1 (de) * 1986-09-23 1993-07-29 Siemens Ag Halbleiterbauelemente mit leistungs-mosfet und steuerschaltung.
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
JPH0249447A (ja) * 1988-05-20 1990-02-19 Hitachi Ltd 半導体装置とその製造方法
JP2592308B2 (ja) * 1988-09-30 1997-03-19 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
JPH02184054A (ja) * 1989-01-11 1990-07-18 Toshiba Corp ハイブリッド型樹脂封止半導体装置
US5045151A (en) * 1989-10-17 1991-09-03 Massachusetts Institute Of Technology Micromachined bonding surfaces and method of forming the same
US5296744A (en) * 1991-07-12 1994-03-22 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
JP2801810B2 (ja) * 1992-04-14 1998-09-21 株式会社東芝 樹脂封止型半導体装置
US5366589A (en) * 1993-11-16 1994-11-22 Motorola, Inc. Bonding pad with circular exposed area and method thereof
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
US5530287A (en) * 1994-09-14 1996-06-25 Unisys Corporation High density wire bond pattern for integratd circuit package
US5808872A (en) * 1994-11-15 1998-09-15 Nippon Steel Corporation Semiconductor package and method of mounting the same on circuit board
US5808354A (en) * 1994-11-21 1998-09-15 Samsung Electronics Co., Ltd. Lead frame for a semiconductor device comprising inner leads having a locking means for preventing the movement of molding compound against the inner lead surface
US5622588A (en) * 1995-02-02 1997-04-22 Hestia Technologies, Inc. Methods of making multi-tier laminate substrates for electronic device packaging
JPH08330346A (ja) * 1995-05-31 1996-12-13 Nec Kyushu Ltd 半導体装置の製造方法
US5736792A (en) * 1995-08-30 1998-04-07 Texas Instruments Incorporated Method of protecting bond wires during molding and handling
TW353223B (en) * 1995-10-10 1999-02-21 Acc Microelectronics Corp Semiconductor board providing high signal pin utilization
KR0156334B1 (ko) * 1995-10-14 1998-10-15 김광호 차폐 본딩 와이어를 구비하는 고주파, 고밀도용 반도체 칩 패키지
JPH09199549A (ja) * 1996-01-22 1997-07-31 Denso Corp ワイヤボンディング方法
US6001724A (en) * 1996-01-29 1999-12-14 Micron Technology, Inc. Method for forming bumps on a semiconductor die using applied voltage pulses to an aluminum wire
US5764486A (en) * 1996-10-10 1998-06-09 Hewlett Packard Company Cost effective structure and method for interconnecting a flip chip with a substrate
US6098283A (en) * 1996-12-19 2000-08-08 Intel Corporation Method for filling vias in organic, multi-layer packages
US5976964A (en) * 1997-04-22 1999-11-02 Micron Technology, Inc. Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US5973397A (en) * 1997-10-22 1999-10-26 Lsi Logic Corporation Semiconductor device and fabrication method which advantageously combine wire bonding and tab techniques to increase integrated circuit I/O pad density

Also Published As

Publication number Publication date
SG68074A1 (en) 1999-10-19
US6194786B1 (en) 2001-02-27
EP0903780A3 (en) 1999-08-25
JPH11251355A (ja) 1999-09-17
KR19990029932A (ko) 1999-04-26
EP0903780A2 (en) 1999-03-24

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