TW337618B - Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC - Google Patents

Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC

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Publication number
TW337618B
TW337618B TW086102725A TW86102725A TW337618B TW 337618 B TW337618 B TW 337618B TW 086102725 A TW086102725 A TW 086102725A TW 86102725 A TW86102725 A TW 86102725A TW 337618 B TW337618 B TW 337618B
Authority
TW
Taiwan
Prior art keywords
sic
ohmic
sector
shottky
rectifying
Prior art date
Application number
TW086102725A
Other languages
English (en)
Chinese (zh)
Inventor
d parsons James
Original Assignee
3C Semiconductor Corp
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Filing date
Publication date
Application filed by 3C Semiconductor Corp filed Critical 3C Semiconductor Corp
Application granted granted Critical
Publication of TW337618B publication Critical patent/TW337618B/zh

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    • H01L2924/1306—Field-effect transistor [FET]
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TW086102725A 1996-03-07 1997-03-06 Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC TW337618B (en)

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CN1216635A (zh) 1999-05-12
CA2248803A1 (en) 1997-09-12
US6150246A (en) 2000-11-21
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