TW335549B - Nand-type flash memory device and driving method thereof - Google Patents

Nand-type flash memory device and driving method thereof

Info

Publication number
TW335549B
TW335549B TW085115716A TW85115716A TW335549B TW 335549 B TW335549 B TW 335549B TW 085115716 A TW085115716 A TW 085115716A TW 85115716 A TW85115716 A TW 85115716A TW 335549 B TW335549 B TW 335549B
Authority
TW
Taiwan
Prior art keywords
serial
select
power
select transistor
transistor
Prior art date
Application number
TW085115716A
Other languages
English (en)
Inventor
Choi Jung-Dal
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW335549B publication Critical patent/TW335549B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
TW085115716A 1995-12-20 1996-12-19 Nand-type flash memory device and driving method thereof TW335549B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950052706A KR0170714B1 (ko) 1995-12-20 1995-12-20 낸드형 플래쉬 메모리 소자 및 그 구동방법

Publications (1)

Publication Number Publication Date
TW335549B true TW335549B (en) 1998-07-01

Family

ID=19441875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115716A TW335549B (en) 1995-12-20 1996-12-19 Nand-type flash memory device and driving method thereof

Country Status (4)

Country Link
US (1) US5812454A (zh)
JP (1) JPH09190696A (zh)
KR (1) KR0170714B1 (zh)
TW (1) TW335549B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912489A (en) * 1996-06-18 1999-06-15 Advanced Micro Devices, Inc. Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
KR100295150B1 (ko) * 1997-12-31 2001-07-12 윤종용 비휘발성메모리장치의동작방법과상기동작을구현할수있는장치및그제조방법
KR100507690B1 (ko) * 1998-12-23 2005-10-26 주식회사 하이닉스반도체 플래쉬 이이피롬 셀 어레이 구조
EP1137011B1 (en) * 2000-03-21 2008-12-10 STMicroelectronics S.r.l. String programmable nonvolatile memory with NOR architecture
DE10058524A1 (de) * 2000-11-24 2002-06-13 Siemens Ag System und Verfahren zur parallelen Übertragung von echtzeitkritischen und nicht echtzeitkritischen Daten über schaltbare Datennetze, insbesondere Ethernet
JP4499982B2 (ja) * 2002-09-11 2010-07-14 株式会社日立製作所 メモリシステム
JP4455017B2 (ja) 2003-11-10 2010-04-21 株式会社東芝 不揮発性半導体記憶装置
JP4157065B2 (ja) * 2004-03-29 2008-09-24 株式会社東芝 半導体記憶装置
KR100632953B1 (ko) * 2005-03-07 2006-10-12 삼성전자주식회사 메모리 소자, 상기 메모리 소자를 위한 메모리 배열 및 상기 메모리 배열의 구동 방법
KR100666174B1 (ko) * 2005-04-27 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
EP1814123A1 (en) * 2006-01-26 2007-08-01 Samsung Electronics Co.,Ltd. Nand-type nonvolatile memory device having common bit lines and methods of operating the same
US7433231B2 (en) * 2006-04-26 2008-10-07 Micron Technology, Inc. Multiple select gates with non-volatile memory cells
KR100776900B1 (ko) * 2006-10-31 2007-11-19 주식회사 하이닉스반도체 플래시 메모리 소자 및 이를 이용한 프로그램/독출 방법
KR100790823B1 (ko) * 2006-12-14 2008-01-03 삼성전자주식회사 리드 디스터브를 개선한 불휘발성 반도체 메모리 장치
JP2008187051A (ja) * 2007-01-30 2008-08-14 Toshiba Corp 半導体記憶装置
US7639540B2 (en) 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
US7830713B2 (en) * 2007-03-14 2010-11-09 Aplus Flash Technology, Inc. Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array
KR101391881B1 (ko) * 2007-10-23 2014-05-07 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 및 읽기방법
US8335108B2 (en) * 2008-11-14 2012-12-18 Aplus Flash Technology, Inc. Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array
KR101635502B1 (ko) * 2009-07-22 2016-07-01 삼성전자주식회사 반도체 메모리 장치 및 그것의 프로그램 방법
US8755227B2 (en) * 2012-01-30 2014-06-17 Phison Electronics Corp. NAND flash memory unit, NAND flash memory array, and methods for operating them
KR101370509B1 (ko) * 2012-02-24 2014-03-06 서울대학교산학협력단 Ｌｓｍ이 가능한 3차원 적층형 낸드 플래시 메모리 어레이 및 그 동작방법
US9251907B2 (en) * 2012-04-03 2016-02-02 Micron Technology, Inc. Memory devices and methods of operating memory devices including applying a potential to a source and a select gate between the source and a string of memory cells while performing a program operation on a memory cell in the string
KR20140136691A (ko) * 2013-05-21 2014-12-01 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
US8953380B1 (en) * 2013-12-02 2015-02-10 Cypress Semiconductor Corporation Systems, methods, and apparatus for memory cells with common source lines
US9875801B2 (en) 2014-02-03 2018-01-23 Micron Technology, Inc. Methods and apparatuses including an asymmetric assist device
US10014061B1 (en) * 2017-04-11 2018-07-03 Micron Technology, Inc. Methods and apparatus having multiple select gates of different ranges of threshold voltages connected in series with memory cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
KR940005694B1 (ko) * 1990-09-19 1994-06-22 삼성전자 주식회사 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 프로그램 최적화회로 및 방법
KR960016803B1 (ko) * 1994-05-07 1996-12-21 삼성전자 주식회사 불휘발성 반도체 메모리장치

Also Published As

Publication number Publication date
US5812454A (en) 1998-09-22
JPH09190696A (ja) 1997-07-22
KR0170714B1 (ko) 1999-03-30
KR970051323A (ko) 1997-07-29

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees