TW325569B - Parallel non-volatile semiconductor memory device and method of using the same - Google Patents
Parallel non-volatile semiconductor memory device and method of using the sameInfo
- Publication number
- TW325569B TW325569B TW085104085A TW85104085A TW325569B TW 325569 B TW325569 B TW 325569B TW 085104085 A TW085104085 A TW 085104085A TW 85104085 A TW85104085 A TW 85104085A TW 325569 B TW325569 B TW 325569B
- Authority
- TW
- Taiwan
- Prior art keywords
- individual
- domain
- source
- drain
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP08100395A JP3328463B2 (ja) | 1995-04-06 | 1995-04-06 | 並列型不揮発性半導体記憶装置及び同装置の使用方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW325569B true TW325569B (en) | 1998-01-21 |
Family
ID=49515848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085104085A TW325569B (en) | 1995-04-06 | 1996-04-08 | Parallel non-volatile semiconductor memory device and method of using the same |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100375427B1 (ko) |
TW (1) | TW325569B (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102179035B1 (ko) * | 2014-03-07 | 2020-11-16 | 삼성전자주식회사 | 반도체 장치 |
-
1996
- 1996-03-27 KR KR1019960008486A patent/KR100375427B1/ko not_active IP Right Cessation
- 1996-04-08 TW TW085104085A patent/TW325569B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100375427B1 (ko) | 2003-07-18 |
KR960039364A (ko) | 1996-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |