TW316325B - - Google Patents

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Publication number
TW316325B
TW316325B TW084112003A TW84112003A TW316325B TW 316325 B TW316325 B TW 316325B TW 084112003 A TW084112003 A TW 084112003A TW 84112003 A TW84112003 A TW 84112003A TW 316325 B TW316325 B TW 316325B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
oxide film
item
silicon oxide
aforementioned
Prior art date
Application number
TW084112003A
Other languages
English (en)
Chinese (zh)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW316325B publication Critical patent/TW316325B/zh

Links

Classifications

    • H10P95/00—
    • H10P14/69215—
    • H10P14/6334—
    • H10P14/662—
    • H10P14/6682—
    • H10P14/6924—
    • H10W20/071—
    • H10W20/077—
    • H10W20/48—
    • H10P14/6336—
    • H10P14/6922—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW084112003A 1995-10-23 1995-11-14 TW316325B (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7274010A JPH09116011A (ja) 1995-10-23 1995-10-23 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW316325B true TW316325B (cg-RX-API-DMAC10.html) 1997-09-21

Family

ID=17535705

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112003A TW316325B (cg-RX-API-DMAC10.html) 1995-10-23 1995-11-14

Country Status (5)

Country Link
US (1) US5703404A (cg-RX-API-DMAC10.html)
JP (1) JPH09116011A (cg-RX-API-DMAC10.html)
KR (1) KR100259314B1 (cg-RX-API-DMAC10.html)
DE (1) DE19612450A1 (cg-RX-API-DMAC10.html)
TW (1) TW316325B (cg-RX-API-DMAC10.html)

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JPH0951035A (ja) * 1995-08-07 1997-02-18 Mitsubishi Electric Corp 層間絶縁膜の形成方法
JP3522917B2 (ja) * 1995-10-03 2004-04-26 株式会社東芝 半導体装置の製造方法および半導体製造装置
JP2917897B2 (ja) * 1996-03-29 1999-07-12 日本電気株式会社 半導体装置の製造方法
US6239579B1 (en) * 1996-07-05 2001-05-29 Estco Battery Management Inc. Device for managing battery packs by selectively monitoring and assessing the operative capacity of the battery modules in the pack
EP0820095A3 (en) * 1996-07-19 1999-01-27 Sony Corporation Method of forming an interlayer film
JP2962272B2 (ja) * 1997-04-18 1999-10-12 日本電気株式会社 半導体装置の製造方法
US5985770A (en) * 1997-08-21 1999-11-16 Micron Technology, Inc. Method of depositing silicon oxides
JPH1187340A (ja) * 1997-09-05 1999-03-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5908672A (en) * 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
JP3132557B2 (ja) * 1998-04-03 2001-02-05 日本電気株式会社 半導体装置の製造方法
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
JP2000077402A (ja) * 1998-09-02 2000-03-14 Tokyo Electron Ltd プラズマ処理方法および半導体装置
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US5994778A (en) 1998-09-18 1999-11-30 Advanced Micro Devices, Inc. Surface treatment of low-k SiOF to prevent metal interaction
US6800571B2 (en) * 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6171945B1 (en) 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films
US6444593B1 (en) 1998-12-02 2002-09-03 Advanced Micro Devices, Inc. Surface treatment of low-K SiOF to prevent metal interaction
US6166427A (en) * 1999-01-15 2000-12-26 Advanced Micro Devices, Inc. Integration of low-K SiOF as inter-layer dielectric for AL-gapfill application
KR100308213B1 (ko) * 1999-02-12 2001-09-26 윤종용 반도체 장치를 위한 저유전 층간 절연막의 제조 방법
US6080683A (en) * 1999-03-22 2000-06-27 Special Materials Research And Technology, Inc. Room temperature wet chemical growth process of SiO based oxides on silicon
US6593077B2 (en) 1999-03-22 2003-07-15 Special Materials Research And Technology, Inc. Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate
JP2000286262A (ja) * 1999-03-30 2000-10-13 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
KR100531467B1 (ko) * 1999-11-05 2005-11-28 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성 방법
EP1123991A3 (en) * 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US6753258B1 (en) 2000-11-03 2004-06-22 Applied Materials Inc. Integration scheme for dual damascene structure
US6905981B1 (en) 2000-11-24 2005-06-14 Asm Japan K.K. Low-k dielectric materials and processes
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6716770B2 (en) 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US7074489B2 (en) * 2001-05-23 2006-07-11 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US6486082B1 (en) * 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
US6613697B1 (en) 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
US6936309B2 (en) * 2002-04-02 2005-08-30 Applied Materials, Inc. Hardness improvement of silicon carboxy films
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US6815373B2 (en) * 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US6927178B2 (en) 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
US7105460B2 (en) 2002-07-11 2006-09-12 Applied Materials Nitrogen-free dielectric anti-reflective coating and hardmask
US6897163B2 (en) * 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
JP2008244254A (ja) * 2007-03-28 2008-10-09 Fujitsu Microelectronics Ltd 半導体装置とその製造方法、及び分割露光用マスク
JP4413947B2 (ja) * 2007-06-21 2010-02-10 株式会社東芝 半導体装置の製造方法
KR102018241B1 (ko) * 2012-03-26 2019-09-04 실코텍 코포레이션 코팅된 물품 및 화학적 기상증착방법

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JPH03175635A (ja) * 1989-12-04 1991-07-30 Nec Corp 半導体装置の多層配線構造体
JP2697315B2 (ja) * 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JPH05226480A (ja) * 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
JP3688726B2 (ja) * 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
KR0131439B1 (ko) * 1992-11-24 1998-04-14 나카무라 타메아키 반도체장치 및 그 제조방법
JP2917783B2 (ja) * 1993-12-24 1999-07-12 日本電気株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US5703404A (en) 1997-12-30
KR100259314B1 (ko) 2000-06-15
JPH09116011A (ja) 1997-05-02
DE19612450A1 (de) 1997-04-24
KR970023759A (ko) 1997-05-30

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