TW312012B - - Google Patents
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- Publication number
- TW312012B TW312012B TW085116162A TW85116162A TW312012B TW 312012 B TW312012 B TW 312012B TW 085116162 A TW085116162 A TW 085116162A TW 85116162 A TW85116162 A TW 85116162A TW 312012 B TW312012 B TW 312012B
- Authority
- TW
- Taiwan
- Prior art keywords
- storage
- crystal
- line
- write
- voltage
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 40
- 230000005611 electricity Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 230000000875 corresponding effect Effects 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 25
- 230000008859 change Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 230000002079 cooperative effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 235000009470 Theobroma cacao Nutrition 0.000 description 1
- 244000240602 cacao Species 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5622—Concurrent multilevel programming of more than one cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34164395A JPH09180473A (ja) | 1995-12-27 | 1995-12-27 | 不揮発性半導体メモリ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW312012B true TW312012B (OSRAM) | 1997-08-01 |
Family
ID=18347685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085116162A TW312012B (OSRAM) | 1995-12-27 | 1996-12-27 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5796652A (OSRAM) |
| JP (1) | JPH09180473A (OSRAM) |
| KR (1) | KR100273626B1 (OSRAM) |
| TW (1) | TW312012B (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996024138A1 (en) * | 1995-01-31 | 1996-08-08 | Hitachi, Ltd. | Nonvolatile memory device and refreshing method |
| US5903495A (en) * | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
| US6320785B1 (en) | 1996-07-10 | 2001-11-20 | Hitachi, Ltd. | Nonvolatile semiconductor memory device and data writing method therefor |
| JP3062730B2 (ja) | 1996-07-10 | 2000-07-12 | 株式会社日立製作所 | 不揮発性半導体記憶装置および書込み方法 |
| JPH10320989A (ja) * | 1997-05-16 | 1998-12-04 | Toshiba Microelectron Corp | 不揮発性半導体メモリ |
| JP3098486B2 (ja) * | 1998-03-31 | 2000-10-16 | 山形日本電気株式会社 | 不揮発性半導体記憶装置 |
| JP3905979B2 (ja) * | 1998-06-03 | 2007-04-18 | 株式会社東芝 | 不揮発性半導体メモリ |
| US6738289B2 (en) * | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
| JP3850016B2 (ja) * | 2001-06-29 | 2006-11-29 | シャープ株式会社 | 不揮発性半導体記憶装置 |
| EP1363292B1 (en) * | 2002-05-13 | 2012-08-08 | STMicroelectronics Srl | Programming method of the memory cells in a multilevel non-volatile memory device |
| EP1365417A1 (en) * | 2002-05-13 | 2003-11-26 | STMicroelectronics S.r.l. | Programming method of the memory cells in a multilevel non-volatile memory device |
| JP4383223B2 (ja) * | 2004-03-30 | 2009-12-16 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
| KR101248941B1 (ko) * | 2006-03-11 | 2013-03-29 | 삼성전자주식회사 | 메모리 소자의 프로그램 및 소거 방법 |
| KR100879387B1 (ko) | 2006-09-22 | 2009-01-20 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03237692A (ja) * | 1990-02-13 | 1991-10-23 | Fujitsu Ltd | 不揮発性多値記憶装置 |
| US5412601A (en) * | 1992-08-31 | 1995-05-02 | Nippon Steel Corporation | Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell |
| JPH0729382A (ja) * | 1993-07-16 | 1995-01-31 | Fuji Electric Co Ltd | 不揮発性半導体メモリ及びそのデータ書込み方法 |
| JP2725564B2 (ja) * | 1993-09-27 | 1998-03-11 | 日本電気株式会社 | 半導体記憶装置及びそのデータ書込み方法 |
| JP3610621B2 (ja) * | 1994-11-11 | 2005-01-19 | ソニー株式会社 | 不揮発性半導体メモリ装置 |
-
1995
- 1995-12-27 JP JP34164395A patent/JPH09180473A/ja active Pending
-
1996
- 1996-12-27 KR KR1019960082415A patent/KR100273626B1/ko not_active Expired - Fee Related
- 1996-12-27 US US08/773,834 patent/US5796652A/en not_active Expired - Lifetime
- 1996-12-27 TW TW085116162A patent/TW312012B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970051351A (ko) | 1997-07-29 |
| US5796652A (en) | 1998-08-18 |
| KR100273626B1 (ko) | 2001-01-15 |
| JPH09180473A (ja) | 1997-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |