JPH09180473A - 不揮発性半導体メモリ装置 - Google Patents

不揮発性半導体メモリ装置

Info

Publication number
JPH09180473A
JPH09180473A JP34164395A JP34164395A JPH09180473A JP H09180473 A JPH09180473 A JP H09180473A JP 34164395 A JP34164395 A JP 34164395A JP 34164395 A JP34164395 A JP 34164395A JP H09180473 A JPH09180473 A JP H09180473A
Authority
JP
Japan
Prior art keywords
memory cell
write
voltage
cell transistors
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34164395A
Other languages
English (en)
Japanese (ja)
Inventor
Toshio Takeshima
俊夫 竹島
Hiroshi Sugawara
寛 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP34164395A priority Critical patent/JPH09180473A/ja
Priority to US08/773,834 priority patent/US5796652A/en
Priority to KR1019960082415A priority patent/KR100273626B1/ko
Priority to TW085116162A priority patent/TW312012B/zh
Publication of JPH09180473A publication Critical patent/JPH09180473A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5622—Concurrent multilevel programming of more than one cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP34164395A 1995-12-27 1995-12-27 不揮発性半導体メモリ装置 Pending JPH09180473A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP34164395A JPH09180473A (ja) 1995-12-27 1995-12-27 不揮発性半導体メモリ装置
US08/773,834 US5796652A (en) 1995-12-27 1996-12-27 Non-volatile semiconductor memory capable of writing multi-value information
KR1019960082415A KR100273626B1 (ko) 1995-12-27 1996-12-27 다치(多値) 정보를 기록할 수 있는 비휘발성 반도체 메모리
TW085116162A TW312012B (OSRAM) 1995-12-27 1996-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34164395A JPH09180473A (ja) 1995-12-27 1995-12-27 不揮発性半導体メモリ装置

Publications (1)

Publication Number Publication Date
JPH09180473A true JPH09180473A (ja) 1997-07-11

Family

ID=18347685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34164395A Pending JPH09180473A (ja) 1995-12-27 1995-12-27 不揮発性半導体メモリ装置

Country Status (4)

Country Link
US (1) US5796652A (OSRAM)
JP (1) JPH09180473A (OSRAM)
KR (1) KR100273626B1 (OSRAM)
TW (1) TW312012B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100490605B1 (ko) * 2001-06-29 2005-05-19 샤프 가부시키가이샤 비휘발성 반도체기억장치
US7583540B2 (en) 2006-09-22 2009-09-01 Samsung Electronics Co., Ltd. Flash memory device and method of programming the same

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996024138A1 (en) * 1995-01-31 1996-08-08 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US6320785B1 (en) 1996-07-10 2001-11-20 Hitachi, Ltd. Nonvolatile semiconductor memory device and data writing method therefor
JP3062730B2 (ja) 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
JPH10320989A (ja) * 1997-05-16 1998-12-04 Toshiba Microelectron Corp 不揮発性半導体メモリ
JP3098486B2 (ja) * 1998-03-31 2000-10-16 山形日本電気株式会社 不揮発性半導体記憶装置
JP3905979B2 (ja) * 1998-06-03 2007-04-18 株式会社東芝 不揮発性半導体メモリ
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
EP1363292B1 (en) * 2002-05-13 2012-08-08 STMicroelectronics Srl Programming method of the memory cells in a multilevel non-volatile memory device
EP1365417A1 (en) * 2002-05-13 2003-11-26 STMicroelectronics S.r.l. Programming method of the memory cells in a multilevel non-volatile memory device
JP4383223B2 (ja) * 2004-03-30 2009-12-16 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
KR101248941B1 (ko) * 2006-03-11 2013-03-29 삼성전자주식회사 메모리 소자의 프로그램 및 소거 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03237692A (ja) * 1990-02-13 1991-10-23 Fujitsu Ltd 不揮発性多値記憶装置
US5412601A (en) * 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
JPH0729382A (ja) * 1993-07-16 1995-01-31 Fuji Electric Co Ltd 不揮発性半導体メモリ及びそのデータ書込み方法
JP2725564B2 (ja) * 1993-09-27 1998-03-11 日本電気株式会社 半導体記憶装置及びそのデータ書込み方法
JP3610621B2 (ja) * 1994-11-11 2005-01-19 ソニー株式会社 不揮発性半導体メモリ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100490605B1 (ko) * 2001-06-29 2005-05-19 샤프 가부시키가이샤 비휘발성 반도체기억장치
US7583540B2 (en) 2006-09-22 2009-09-01 Samsung Electronics Co., Ltd. Flash memory device and method of programming the same

Also Published As

Publication number Publication date
KR970051351A (ko) 1997-07-29
US5796652A (en) 1998-08-18
KR100273626B1 (ko) 2001-01-15
TW312012B (OSRAM) 1997-08-01

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Legal Events

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Effective date: 19980922