KR100273626B1 - 다치(多値) 정보를 기록할 수 있는 비휘발성 반도체 메모리 - Google Patents

다치(多値) 정보를 기록할 수 있는 비휘발성 반도체 메모리 Download PDF

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Publication number
KR100273626B1
KR100273626B1 KR1019960082415A KR19960082415A KR100273626B1 KR 100273626 B1 KR100273626 B1 KR 100273626B1 KR 1019960082415 A KR1019960082415 A KR 1019960082415A KR 19960082415 A KR19960082415 A KR 19960082415A KR 100273626 B1 KR100273626 B1 KR 100273626B1
Authority
KR
South Korea
Prior art keywords
memory cell
voltage
write
bit lines
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960082415A
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English (en)
Korean (ko)
Other versions
KR970051351A (ko
Inventor
도시오 다케시마
히로시 스가와라
Original Assignee
가네꼬 히사시
닛본 덴기 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR970051351A publication Critical patent/KR970051351A/ko
Application granted granted Critical
Publication of KR100273626B1 publication Critical patent/KR100273626B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5622—Concurrent multilevel programming of more than one cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019960082415A 1995-12-27 1996-12-27 다치(多値) 정보를 기록할 수 있는 비휘발성 반도체 메모리 Expired - Fee Related KR100273626B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34164395A JPH09180473A (ja) 1995-12-27 1995-12-27 不揮発性半導体メモリ装置
JP95-341643 1995-12-27

Publications (2)

Publication Number Publication Date
KR970051351A KR970051351A (ko) 1997-07-29
KR100273626B1 true KR100273626B1 (ko) 2001-01-15

Family

ID=18347685

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960082415A Expired - Fee Related KR100273626B1 (ko) 1995-12-27 1996-12-27 다치(多値) 정보를 기록할 수 있는 비휘발성 반도체 메모리

Country Status (4)

Country Link
US (1) US5796652A (OSRAM)
JP (1) JPH09180473A (OSRAM)
KR (1) KR100273626B1 (OSRAM)
TW (1) TW312012B (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996024138A1 (en) * 1995-01-31 1996-08-08 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US6320785B1 (en) 1996-07-10 2001-11-20 Hitachi, Ltd. Nonvolatile semiconductor memory device and data writing method therefor
JP3062730B2 (ja) 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
JPH10320989A (ja) * 1997-05-16 1998-12-04 Toshiba Microelectron Corp 不揮発性半導体メモリ
JP3098486B2 (ja) * 1998-03-31 2000-10-16 山形日本電気株式会社 不揮発性半導体記憶装置
JP3905979B2 (ja) * 1998-06-03 2007-04-18 株式会社東芝 不揮発性半導体メモリ
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
JP3850016B2 (ja) * 2001-06-29 2006-11-29 シャープ株式会社 不揮発性半導体記憶装置
EP1363292B1 (en) * 2002-05-13 2012-08-08 STMicroelectronics Srl Programming method of the memory cells in a multilevel non-volatile memory device
EP1365417A1 (en) * 2002-05-13 2003-11-26 STMicroelectronics S.r.l. Programming method of the memory cells in a multilevel non-volatile memory device
JP4383223B2 (ja) * 2004-03-30 2009-12-16 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
KR101248941B1 (ko) * 2006-03-11 2013-03-29 삼성전자주식회사 메모리 소자의 프로그램 및 소거 방법
KR100879387B1 (ko) 2006-09-22 2009-01-20 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03237692A (ja) * 1990-02-13 1991-10-23 Fujitsu Ltd 不揮発性多値記憶装置
US5412601A (en) * 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
JPH0729382A (ja) * 1993-07-16 1995-01-31 Fuji Electric Co Ltd 不揮発性半導体メモリ及びそのデータ書込み方法
JP2725564B2 (ja) * 1993-09-27 1998-03-11 日本電気株式会社 半導体記憶装置及びそのデータ書込み方法
JP3610621B2 (ja) * 1994-11-11 2005-01-19 ソニー株式会社 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
KR970051351A (ko) 1997-07-29
US5796652A (en) 1998-08-18
JPH09180473A (ja) 1997-07-11
TW312012B (OSRAM) 1997-08-01

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