TW297900B - - Google Patents
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- Publication number
- TW297900B TW297900B TW085104682A TW85104682A TW297900B TW 297900 B TW297900 B TW 297900B TW 085104682 A TW085104682 A TW 085104682A TW 85104682 A TW85104682 A TW 85104682A TW 297900 B TW297900 B TW 297900B
- Authority
- TW
- Taiwan
- Prior art keywords
- signal
- control signal
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- selection
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 20
- 238000012546 transfer Methods 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 6
- 230000000875 corresponding effect Effects 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 230000002441 reversible effect Effects 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 101100365883 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SLG1 gene Proteins 0.000 description 3
- 101100156779 Schizosaccharomyces pombe (strain 972 / ATCC 24843) wsc1 gene Proteins 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 101100156780 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) WSC2 gene Proteins 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- 101100008048 Caenorhabditis elegans cut-4 gene Proteins 0.000 description 1
- 101100371648 Caenorhabditis elegans usp-14 gene Proteins 0.000 description 1
- 102100035957 Huntingtin-interacting protein 1 Human genes 0.000 description 1
- 108050003304 Huntingtin-interacting protein 1 Proteins 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000008256 Waardenburg syndrome type 2B Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000000819 phase cycle Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 101150090882 tgt-1 gene Proteins 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9646295A JPH08293198A (ja) | 1995-04-21 | 1995-04-21 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW297900B true TW297900B (OSRAM) | 1997-02-11 |
Family
ID=14165702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085104682A TW297900B (OSRAM) | 1995-04-21 | 1996-04-19 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5719820A (OSRAM) |
| EP (1) | EP0739014A3 (OSRAM) |
| JP (1) | JPH08293198A (OSRAM) |
| KR (1) | KR100232614B1 (OSRAM) |
| TW (1) | TW297900B (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5715208A (en) * | 1995-09-29 | 1998-02-03 | Micron Technology, Inc. | Memory device and method for reading data therefrom |
| DE69627350D1 (de) * | 1996-11-27 | 2003-05-15 | St Microelectronics Srl | Verfahren und Vorrichtung zur Erzeugung eines Addressenübergangssynchronisationsignals (ATD) |
| US5970022A (en) * | 1997-03-21 | 1999-10-19 | Winbond Electronics Corporation | Semiconductor memory device with reduced read disturbance |
| KR100318439B1 (ko) * | 1999-06-30 | 2001-12-24 | 박종섭 | 워드라인 억세스 타임을 개선하기 위한 방법 및 그를 위한 반도체 메모리 장치 |
| US6788614B2 (en) * | 2001-06-14 | 2004-09-07 | Micron Technology, Inc. | Semiconductor memory with wordline timing |
| ITMI20021185A1 (it) * | 2002-05-31 | 2003-12-01 | St Microelectronics Srl | Dispositivo e metodo di lettura per memorie non volatili dotate di almeno un'interfaccia di comunicazione pseudo parallela |
| JP4856965B2 (ja) * | 2006-01-27 | 2012-01-18 | オンセミコンダクター・トレーディング・リミテッド | メモリ |
| KR100889311B1 (ko) * | 2007-02-23 | 2009-03-18 | 주식회사 하이닉스반도체 | 비트라인 감지증폭기를 포함하는 반도체메모리소자 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199496A (ja) * | 1982-05-14 | 1983-11-19 | Hitachi Ltd | 欠陥救済回路を有する半導体メモリ |
| JPH0636319B2 (ja) * | 1984-11-26 | 1994-05-11 | 株式会社日立製作所 | 半導体集積回路 |
| JPS61150194A (ja) * | 1984-12-25 | 1986-07-08 | Nec Corp | リ−ド・オンリ・メモリ |
| JPS62293597A (ja) * | 1986-06-12 | 1987-12-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| JPH0812756B2 (ja) * | 1987-06-22 | 1996-02-07 | 松下電子工業株式会社 | スタチックｒａｍ回路 |
| JP2753705B2 (ja) * | 1987-10-26 | 1998-05-20 | 株式会社日立製作所 | 半導体記憶装置 |
| JPH065100A (ja) * | 1992-06-18 | 1994-01-14 | Toshiba Corp | 半導体記憶装置 |
| JPH07220487A (ja) * | 1994-01-27 | 1995-08-18 | Toshiba Corp | 不揮発性メモリ回路 |
-
1995
- 1995-04-21 JP JP9646295A patent/JPH08293198A/ja active Pending
-
1996
- 1996-04-18 EP EP96106135A patent/EP0739014A3/en not_active Withdrawn
- 1996-04-19 TW TW085104682A patent/TW297900B/zh not_active IP Right Cessation
- 1996-04-22 KR KR1019960012908A patent/KR100232614B1/ko not_active Expired - Fee Related
- 1996-04-22 US US08/635,652 patent/US5719820A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100232614B1 (ko) | 1999-12-01 |
| US5719820A (en) | 1998-02-17 |
| JPH08293198A (ja) | 1996-11-05 |
| KR960039001A (ko) | 1996-11-21 |
| EP0739014A2 (en) | 1996-10-23 |
| EP0739014A3 (en) | 1998-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |