JPH08293198A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH08293198A
JPH08293198A JP9646295A JP9646295A JPH08293198A JP H08293198 A JPH08293198 A JP H08293198A JP 9646295 A JP9646295 A JP 9646295A JP 9646295 A JP9646295 A JP 9646295A JP H08293198 A JPH08293198 A JP H08293198A
Authority
JP
Japan
Prior art keywords
signal
control signal
circuit
output
selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9646295A
Other languages
English (en)
Japanese (ja)
Inventor
Yukio Fuji
幸雄 藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP9646295A priority Critical patent/JPH08293198A/ja
Priority to EP96106135A priority patent/EP0739014A3/en
Priority to TW085104682A priority patent/TW297900B/zh
Priority to US08/635,652 priority patent/US5719820A/en
Priority to KR1019960012908A priority patent/KR100232614B1/ko
Publication of JPH08293198A publication Critical patent/JPH08293198A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP9646295A 1995-04-21 1995-04-21 半導体記憶装置 Pending JPH08293198A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9646295A JPH08293198A (ja) 1995-04-21 1995-04-21 半導体記憶装置
EP96106135A EP0739014A3 (en) 1995-04-21 1996-04-18 Semiconductor memory device
TW085104682A TW297900B (OSRAM) 1995-04-21 1996-04-19
US08/635,652 US5719820A (en) 1995-04-21 1996-04-22 Semiconductor memory device
KR1019960012908A KR100232614B1 (ko) 1995-04-21 1996-04-22 반도체 메모리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9646295A JPH08293198A (ja) 1995-04-21 1995-04-21 半導体記憶装置

Publications (1)

Publication Number Publication Date
JPH08293198A true JPH08293198A (ja) 1996-11-05

Family

ID=14165702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9646295A Pending JPH08293198A (ja) 1995-04-21 1995-04-21 半導体記憶装置

Country Status (5)

Country Link
US (1) US5719820A (OSRAM)
EP (1) EP0739014A3 (OSRAM)
JP (1) JPH08293198A (OSRAM)
KR (1) KR100232614B1 (OSRAM)
TW (1) TW297900B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975559B2 (en) * 2002-05-31 2005-12-13 Stmicroelectronics S.R.L. Device and method for reading non-volatile memories having at least one pseudo-parallel communication interface
JP2007200464A (ja) * 2006-01-27 2007-08-09 Sanyo Electric Co Ltd メモリ

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5715208A (en) * 1995-09-29 1998-02-03 Micron Technology, Inc. Memory device and method for reading data therefrom
DE69627350D1 (de) * 1996-11-27 2003-05-15 St Microelectronics Srl Verfahren und Vorrichtung zur Erzeugung eines Addressenübergangssynchronisationsignals (ATD)
US5970022A (en) * 1997-03-21 1999-10-19 Winbond Electronics Corporation Semiconductor memory device with reduced read disturbance
KR100318439B1 (ko) * 1999-06-30 2001-12-24 박종섭 워드라인 억세스 타임을 개선하기 위한 방법 및 그를 위한 반도체 메모리 장치
US6788614B2 (en) * 2001-06-14 2004-09-07 Micron Technology, Inc. Semiconductor memory with wordline timing
KR100889311B1 (ko) * 2007-02-23 2009-03-18 주식회사 하이닉스반도체 비트라인 감지증폭기를 포함하는 반도체메모리소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61126685A (ja) * 1984-11-26 1986-06-14 Hitachi Ltd 半導体集積回路
JPS61150194A (ja) * 1984-12-25 1986-07-08 Nec Corp リ−ド・オンリ・メモリ
JPS62293597A (ja) * 1986-06-12 1987-12-21 Matsushita Electric Ind Co Ltd 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199496A (ja) * 1982-05-14 1983-11-19 Hitachi Ltd 欠陥救済回路を有する半導体メモリ
JPH0812756B2 (ja) * 1987-06-22 1996-02-07 松下電子工業株式会社 スタチックｒａｍ回路
JP2753705B2 (ja) * 1987-10-26 1998-05-20 株式会社日立製作所 半導体記憶装置
JPH065100A (ja) * 1992-06-18 1994-01-14 Toshiba Corp 半導体記憶装置
JPH07220487A (ja) * 1994-01-27 1995-08-18 Toshiba Corp 不揮発性メモリ回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61126685A (ja) * 1984-11-26 1986-06-14 Hitachi Ltd 半導体集積回路
JPS61150194A (ja) * 1984-12-25 1986-07-08 Nec Corp リ−ド・オンリ・メモリ
JPS62293597A (ja) * 1986-06-12 1987-12-21 Matsushita Electric Ind Co Ltd 半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975559B2 (en) * 2002-05-31 2005-12-13 Stmicroelectronics S.R.L. Device and method for reading non-volatile memories having at least one pseudo-parallel communication interface
JP2007200464A (ja) * 2006-01-27 2007-08-09 Sanyo Electric Co Ltd メモリ

Also Published As

Publication number Publication date
KR100232614B1 (ko) 1999-12-01
US5719820A (en) 1998-02-17
KR960039001A (ko) 1996-11-21
EP0739014A2 (en) 1996-10-23
TW297900B (OSRAM) 1997-02-11
EP0739014A3 (en) 1998-08-05

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Legal Events

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Effective date: 19970819