TW308705B - - Google Patents
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- Publication number
- TW308705B TW308705B TW085106244A TW85106244A TW308705B TW 308705 B TW308705 B TW 308705B TW 085106244 A TW085106244 A TW 085106244A TW 85106244 A TW85106244 A TW 85106244A TW 308705 B TW308705 B TW 308705B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- gas
- lock chamber
- pump
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/042—Preparation of foundation plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/184—Vacuum locks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950042623A KR100189981B1 (ko) | 1995-11-21 | 1995-11-21 | 진공 시스템을 구비한 반도체 소자 제조장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW308705B true TW308705B (https=) | 1997-06-21 |
Family
ID=19435018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085106244A TW308705B (https=) | 1995-11-21 | 1996-05-25 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5833425A (https=) |
| EP (2) | EP1017085A3 (https=) |
| JP (1) | JP4008515B2 (https=) |
| KR (1) | KR100189981B1 (https=) |
| CN (2) | CN1242456C (https=) |
| DE (1) | DE69616481T2 (https=) |
| TW (1) | TW308705B (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4117969C2 (de) * | 1991-05-31 | 2000-11-09 | Balzers Ag Liechtenstein | Vakuumkammer |
| KR100296651B1 (ko) * | 1998-07-09 | 2001-10-26 | 윤종용 | 반도체진공설비및이를이용하는방법 |
| US6161311A (en) * | 1998-07-10 | 2000-12-19 | Asm America, Inc. | System and method for reducing particles in epitaxial reactors |
| US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
| US6197119B1 (en) | 1999-02-18 | 2001-03-06 | Mks Instruments, Inc. | Method and apparatus for controlling polymerized teos build-up in vacuum pump lines |
| US6238514B1 (en) | 1999-02-18 | 2001-05-29 | Mks Instruments, Inc. | Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent |
| KR100740905B1 (ko) * | 2000-03-16 | 2007-07-19 | 엘지.필립스 엘시디 주식회사 | 고진공 스퍼터 장치 |
| FR2807951B1 (fr) * | 2000-04-20 | 2003-05-16 | Cit Alcatel | Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur |
| US6568896B2 (en) | 2001-03-21 | 2003-05-27 | Applied Materials, Inc. | Transfer chamber with side wall port |
| US6488745B2 (en) | 2001-03-23 | 2002-12-03 | Mks Instruments, Inc. | Trap apparatus and method for condensable by-products of deposition reactions |
| US6701972B2 (en) | 2002-01-11 | 2004-03-09 | The Boc Group, Inc. | Vacuum load lock, system including vacuum load lock, and associated methods |
| JP2005191494A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光装置、デバイスの製造方法 |
| US7695231B2 (en) * | 2004-03-08 | 2010-04-13 | Jusung Engineering Co., Ltd. | Vacuum pumping system, driving method thereof, apparatus having the same, and method of transferring substrate using the same |
| US7253107B2 (en) * | 2004-06-17 | 2007-08-07 | Asm International N.V. | Pressure control system |
| JP4335085B2 (ja) * | 2004-07-05 | 2009-09-30 | シーケーディ株式会社 | 真空圧力制御システム |
| JP4581602B2 (ja) * | 2004-09-29 | 2010-11-17 | 株式会社島津製作所 | 真空処理装置 |
| JP2006342688A (ja) * | 2005-06-07 | 2006-12-21 | Ebara Corp | 真空排気システム |
| CN100468629C (zh) * | 2005-07-20 | 2009-03-11 | 台达电子工业股份有限公司 | 真空控制系统 |
| KR101121419B1 (ko) * | 2005-08-30 | 2012-03-15 | 주성엔지니어링(주) | 기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법 |
| KR100665855B1 (ko) * | 2006-02-01 | 2007-01-09 | 삼성전자주식회사 | 반도체 디바이스 제조설비의 진공장치 및 이를 이용한진공방법 |
| EP2003235B1 (en) * | 2006-03-31 | 2011-11-09 | Kuraray Kuraflex Co., Ltd. | Molded object having nonwoven fibrous structure |
| US7989173B2 (en) * | 2006-12-27 | 2011-08-02 | The Johns Hopkins University | Detection and diagnosis of inflammatory disorders |
| KR101359401B1 (ko) * | 2007-06-21 | 2014-02-10 | 주성엔지니어링(주) | 고효율 박막 태양전지와 그 제조방법 및 제조장치 |
| JP2009252953A (ja) * | 2008-04-04 | 2009-10-29 | Hitachi High-Technologies Corp | 真空処理装置 |
| JP2010153737A (ja) * | 2008-12-26 | 2010-07-08 | Hitachi High-Technologies Corp | 真空処理装置 |
| US8623141B2 (en) | 2009-05-18 | 2014-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Piping system and control for semiconductor processing |
| WO2011149542A1 (en) * | 2010-05-28 | 2011-12-01 | Axcelis Technologies Inc. | Active dew point sensing and load lock venting to prevent condensation of workpieces |
| EP2546300A1 (en) | 2011-07-14 | 2013-01-16 | Cytec Surface Specialties, S.A. | Radiation curable aqueous dispersions |
| US20140116336A1 (en) * | 2012-10-26 | 2014-05-01 | Applied Materials, Inc. | Substrate process chamber exhaust |
| KR102343637B1 (ko) | 2019-06-13 | 2021-12-28 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| US12523380B2 (en) | 2021-08-16 | 2026-01-13 | Applied Materials, Inc. | Prevention of contamination of substrates during pressure changes in processing systems |
| US12278124B2 (en) * | 2021-10-28 | 2025-04-15 | Applied Materials, Inc. | Model-based controlled load lock pumping scheme |
| CN119650456B (zh) * | 2023-09-15 | 2025-12-12 | 北京北方华创微电子装备有限公司 | 负载锁定组件及半导体工艺设备 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4181288A (en) * | 1978-04-05 | 1980-01-01 | Simon Bylsma | Fluid pressure regulator valve unit for a fluid delivery system |
| US4573431A (en) * | 1983-11-16 | 1986-03-04 | Btu Engineering Corporation | Modular V-CVD diffusion furnace |
| US4657621A (en) * | 1984-10-22 | 1987-04-14 | Texas Instruments Incorporated | Low particulate vacuum chamber input/output valve |
| US4739787A (en) * | 1986-11-10 | 1988-04-26 | Stoltenberg Kevin J | Method and apparatus for improving the yield of integrated circuit devices |
| JPH01198034A (ja) * | 1988-02-03 | 1989-08-09 | Nec Yamagata Ltd | 半導体装置の製造方法 |
| JPH02185974A (ja) * | 1989-01-13 | 1990-07-20 | Tokyo Electron Ltd | 金属シリサイド膜の減圧cvd装置 |
| US4987933A (en) * | 1989-03-03 | 1991-01-29 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
| KR0155572B1 (ko) * | 1991-05-28 | 1998-12-01 | 이노우에 아키라 | 감압처리 시스템 및 감압처리 방법 |
| JP3149206B2 (ja) * | 1991-05-30 | 2001-03-26 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5228208A (en) * | 1991-06-17 | 1993-07-20 | Applied Materials, Inc. | Method of and apparatus for controlling thermal gradient in a load lock chamber |
| JPH0536618A (ja) * | 1991-08-02 | 1993-02-12 | Mitsubishi Electric Corp | 半導体製造装置 |
| US5303671A (en) * | 1992-02-07 | 1994-04-19 | Tokyo Electron Limited | System for continuously washing and film-forming a semiconductor wafer |
| JPH05218176A (ja) * | 1992-02-07 | 1993-08-27 | Tokyo Electron Tohoku Kk | 熱処理方法及び被処理体の移載方法 |
| JPH0669180A (ja) * | 1992-08-13 | 1994-03-11 | Tokyo Hightech Kk | 真空乾燥装置 |
| JP3330166B2 (ja) * | 1992-12-04 | 2002-09-30 | 東京エレクトロン株式会社 | 処理装置 |
| US5308989A (en) * | 1992-12-22 | 1994-05-03 | Eaton Corporation | Fluid flow control method and apparatus for an ion implanter |
| EP0635875B1 (en) * | 1993-02-05 | 1997-01-02 | Asm Japan K.K. | Apparatus for heat treatment |
| JP3218488B2 (ja) * | 1993-03-16 | 2001-10-15 | 東京エレクトロン株式会社 | 処理装置 |
| US6047713A (en) * | 1994-02-03 | 2000-04-11 | Applied Materials, Inc. | Method for cleaning a throttle valve |
| US5485542A (en) * | 1994-07-18 | 1996-01-16 | Mks Instruments, Inc. | Heated fluid control valve with electric heating element and thermocouple wiring disposed in rotatable shaft |
| JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
-
1995
- 1995-11-21 KR KR1019950042623A patent/KR100189981B1/ko not_active Expired - Lifetime
-
1996
- 1996-05-25 TW TW085106244A patent/TW308705B/zh not_active IP Right Cessation
- 1996-06-06 CN CNB200310116459XA patent/CN1242456C/zh not_active Expired - Lifetime
- 1996-06-06 CN CNB961022655A patent/CN1165637C/zh not_active Expired - Lifetime
- 1996-06-07 EP EP00302162A patent/EP1017085A3/en not_active Withdrawn
- 1996-06-07 EP EP96304288A patent/EP0776026B1/en not_active Expired - Lifetime
- 1996-06-07 DE DE69616481T patent/DE69616481T2/de not_active Expired - Lifetime
- 1996-06-18 JP JP17750396A patent/JP4008515B2/ja not_active Expired - Lifetime
- 1996-11-20 US US08/752,954 patent/US5833425A/en not_active Expired - Lifetime
-
1997
- 1997-12-01 US US08/980,789 patent/US6071350A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1152626A (zh) | 1997-06-25 |
| EP1017085A2 (en) | 2000-07-05 |
| DE69616481D1 (de) | 2001-12-06 |
| US5833425A (en) | 1998-11-10 |
| US6071350A (en) | 2000-06-06 |
| KR970030243A (ko) | 1997-06-26 |
| CN1242456C (zh) | 2006-02-15 |
| JP4008515B2 (ja) | 2007-11-14 |
| JPH09148265A (ja) | 1997-06-06 |
| EP1017085A3 (en) | 2002-09-25 |
| EP0776026A1 (en) | 1997-05-28 |
| CN1501445A (zh) | 2004-06-02 |
| KR100189981B1 (ko) | 1999-06-01 |
| DE69616481T2 (de) | 2002-07-11 |
| EP0776026B1 (en) | 2001-10-31 |
| CN1165637C (zh) | 2004-09-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |