KR100189981B1 - 진공 시스템을 구비한 반도체 소자 제조장치 - Google Patents

진공 시스템을 구비한 반도체 소자 제조장치 Download PDF

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Publication number
KR100189981B1
KR100189981B1 KR1019950042623A KR19950042623A KR100189981B1 KR 100189981 B1 KR100189981 B1 KR 100189981B1 KR 1019950042623 A KR1019950042623 A KR 1019950042623A KR 19950042623 A KR19950042623 A KR 19950042623A KR 100189981 B1 KR100189981 B1 KR 100189981B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
load lock
exhaust pipe
device manufacturing
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950042623A
Other languages
English (en)
Korean (ko)
Other versions
KR970030243A (ko
Inventor
전재선
김원영
양윤모
채승기
Original Assignee
윤종용
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자주식회사 filed Critical 윤종용
Priority to KR1019950042623A priority Critical patent/KR100189981B1/ko
Priority to TW085106244A priority patent/TW308705B/zh
Priority to CNB200310116459XA priority patent/CN1242456C/zh
Priority to CNB961022655A priority patent/CN1165637C/zh
Priority to EP96304288A priority patent/EP0776026B1/en
Priority to DE69616481T priority patent/DE69616481T2/de
Priority to EP00302162A priority patent/EP1017085A3/en
Priority to JP17750396A priority patent/JP4008515B2/ja
Priority to US08/752,954 priority patent/US5833425A/en
Publication of KR970030243A publication Critical patent/KR970030243A/ko
Priority to US08/980,789 priority patent/US6071350A/en
Application granted granted Critical
Publication of KR100189981B1 publication Critical patent/KR100189981B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042—Preparation of foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/184—Vacuum locks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019950042623A 1995-11-21 1995-11-21 진공 시스템을 구비한 반도체 소자 제조장치 Expired - Lifetime KR100189981B1 (ko)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1019950042623A KR100189981B1 (ko) 1995-11-21 1995-11-21 진공 시스템을 구비한 반도체 소자 제조장치
TW085106244A TW308705B (https=) 1995-11-21 1996-05-25
CNB961022655A CN1165637C (zh) 1995-11-21 1996-06-06 使用真空系统的半导体器件制造设备
CNB200310116459XA CN1242456C (zh) 1995-11-21 1996-06-06 使用真空系统的半导体器件制造设备
DE69616481T DE69616481T2 (de) 1995-11-21 1996-06-07 Gerät zur Herstellung einer Halbleitervorrichtung mit Vakuumsystem
EP00302162A EP1017085A3 (en) 1995-11-21 1996-06-07 Semiconductor device manufacturing apparatus employing vacuum system
EP96304288A EP0776026B1 (en) 1995-11-21 1996-06-07 Semiconductor device manufacturing apparatus employing vacuum system
JP17750396A JP4008515B2 (ja) 1995-11-21 1996-06-18 半導体製造装置
US08/752,954 US5833425A (en) 1995-11-21 1996-11-20 Semiconductor device manufacturing apparatus employing vacuum system
US08/980,789 US6071350A (en) 1995-11-21 1997-12-01 Semiconductor device manufacturing apparatus employing vacuum system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950042623A KR100189981B1 (ko) 1995-11-21 1995-11-21 진공 시스템을 구비한 반도체 소자 제조장치

Publications (2)

Publication Number Publication Date
KR970030243A KR970030243A (ko) 1997-06-26
KR100189981B1 true KR100189981B1 (ko) 1999-06-01

Family

ID=19435018

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950042623A Expired - Lifetime KR100189981B1 (ko) 1995-11-21 1995-11-21 진공 시스템을 구비한 반도체 소자 제조장치

Country Status (7)

Country Link
US (2) US5833425A (https=)
EP (2) EP1017085A3 (https=)
JP (1) JP4008515B2 (https=)
KR (1) KR100189981B1 (https=)
CN (2) CN1242456C (https=)
DE (1) DE69616481T2 (https=)
TW (1) TW308705B (https=)

Cited By (1)

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KR101121419B1 (ko) * 2005-08-30 2012-03-15 주성엔지니어링(주) 기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법

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US6568896B2 (en) 2001-03-21 2003-05-27 Applied Materials, Inc. Transfer chamber with side wall port
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US6701972B2 (en) 2002-01-11 2004-03-09 The Boc Group, Inc. Vacuum load lock, system including vacuum load lock, and associated methods
JP2005191494A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光装置、デバイスの製造方法
US7695231B2 (en) * 2004-03-08 2010-04-13 Jusung Engineering Co., Ltd. Vacuum pumping system, driving method thereof, apparatus having the same, and method of transferring substrate using the same
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CN100468629C (zh) * 2005-07-20 2009-03-11 台达电子工业股份有限公司 真空控制系统
KR100665855B1 (ko) * 2006-02-01 2007-01-09 삼성전자주식회사 반도체 디바이스 제조설비의 진공장치 및 이를 이용한진공방법
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KR101359401B1 (ko) * 2007-06-21 2014-02-10 주성엔지니어링(주) 고효율 박막 태양전지와 그 제조방법 및 제조장치
JP2009252953A (ja) * 2008-04-04 2009-10-29 Hitachi High-Technologies Corp 真空処理装置
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US8623141B2 (en) 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
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KR101121419B1 (ko) * 2005-08-30 2012-03-15 주성엔지니어링(주) 기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법

Also Published As

Publication number Publication date
CN1152626A (zh) 1997-06-25
EP1017085A2 (en) 2000-07-05
TW308705B (https=) 1997-06-21
DE69616481D1 (de) 2001-12-06
US5833425A (en) 1998-11-10
US6071350A (en) 2000-06-06
KR970030243A (ko) 1997-06-26
CN1242456C (zh) 2006-02-15
JP4008515B2 (ja) 2007-11-14
JPH09148265A (ja) 1997-06-06
EP1017085A3 (en) 2002-09-25
EP0776026A1 (en) 1997-05-28
CN1501445A (zh) 2004-06-02
DE69616481T2 (de) 2002-07-11
EP0776026B1 (en) 2001-10-31
CN1165637C (zh) 2004-09-08

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