KR101121419B1 - 기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법 - Google Patents
기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법 Download PDFInfo
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- KR101121419B1 KR101121419B1 KR1020050080104A KR20050080104A KR101121419B1 KR 101121419 B1 KR101121419 B1 KR 101121419B1 KR 1020050080104 A KR1020050080104 A KR 1020050080104A KR 20050080104 A KR20050080104 A KR 20050080104A KR 101121419 B1 KR101121419 B1 KR 101121419B1
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- Prior art keywords
- region
- venting
- pumping
- substrate
- chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
- F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
- F16L55/07—Arrangement or mounting of devices, e.g. valves, for venting or aerating or draining
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (9)
- 하나의 반응공간이 제1 영역과 제2 영역으로 구분되는 챔버;상기 챔버의 내부에 설치되는 기판안치수단;상기 기판안치수단 상부에 위치하는 가스분배판;상기 제1 영역 및 상기 제2 영역에 각각 연통되어 상기 제1 영역 및 제2 영역 각각을 펌핑하는 제1 펌핑수단 및 제2 펌핑수단; 및상기 제1 영역 및 상기 제2 영역에 각각 연결되어 상기 제1 영역 및 제2 영역 각각을 벤팅하는 1 벤팅수단 및 제2 벤팅수단;을 포함하고,상기 제1 영역은 상기 가스분배판의 하부영역이고, 상기 제2 영역은 상기 가스분배판의 상부영역인 것을 특징으로 하는 기판제조장치.
- 제1항에 있어서,상기 제1 펌핑수단 및 상기 제2 펌핑수단 중 하나는 가스유입관과 연통되어 설치되는 기판제조장치.
- 제1항에 있어서,상기 제1 펌핑수단 또는 상기 제2 펌핑수단에는 벤팅수단이 연결되는 기판제조장치
- 삭제
- 삭제
- 제1항에 있어서,상기 제1 영역의 상기 제1 벤팅수단은,상기 챔버의 측벽에 설치되는 관통부;내부에 중공부를 가지고 일 측에 상기 중공부와 연통되는 다수의 분사구를 구비하며, 상기 관통부에 삽입되는 벤팅블록;상기 벤팅블록의 타 측에 연결되어 상기 중공부와 연통하는 벤팅라인을 포함하는 기판제조장치
- 제1항에 있어서,상기 제1 영역과 상기 제2 영역에는 각각 제1 압력측정장치 및 제2 압력측정장치가 설치되는 기판제조장치
- 가스분배판에 의하여 하나의 반응공간이 서로 연통되는 제1 영역과 제2 영역으로 구분되는 챔버의 내부를 펌핑하는 방법으로서,상기 제1 영역과 연통되어 상기 제1 영역을 펌핑하는 제1 펌핑수단과 상기 제2 영역과 연통되어 상기 제2 영역을 펌핑하는 제2 펌핑수단을 동시에 동작시켜 배기하는 기판제조장치의 진공펌핑방법
- 가스분배판에 의하여 하나의 반응공간인 서로 연통되는 제1영역과 제2영역으로 구분되는 챔버의 내부를 벤팅하는 방법으로서,상기 제1영역과 연통되어 상기 제1 영역을 벤팅하는 제1 벤팅수단과 상기 제2 영역과 연통되어 상기 제2 영역을 벤팅하는 제2 벤팅수단을 동시에 동작시켜 벤팅하는 기판제조장치의 벤팅방법
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KR1020050080104A KR101121419B1 (ko) | 2005-08-30 | 2005-08-30 | 기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법 |
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KR1020050080104A KR101121419B1 (ko) | 2005-08-30 | 2005-08-30 | 기판제조장치 및 이에 이용되는 진공펌핑방법과 벤팅방법 |
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KR20070028625A KR20070028625A (ko) | 2007-03-13 |
KR101121419B1 true KR101121419B1 (ko) | 2012-03-15 |
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KR100914959B1 (ko) * | 2007-09-03 | 2009-09-02 | 주식회사 쏠리스 | 진공캐닝용 핀치오프 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100189981B1 (ko) * | 1995-11-21 | 1999-06-01 | 윤종용 | 진공 시스템을 구비한 반도체 소자 제조장치 |
US20030082891A1 (en) * | 2001-10-26 | 2003-05-01 | Walther Steven R. | Methods and apparatus for plasma doping and ion implantation in an integrated processing system |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100189981B1 (ko) * | 1995-11-21 | 1999-06-01 | 윤종용 | 진공 시스템을 구비한 반도체 소자 제조장치 |
US20030082891A1 (en) * | 2001-10-26 | 2003-05-01 | Walther Steven R. | Methods and apparatus for plasma doping and ion implantation in an integrated processing system |
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