TW307032B - - Google Patents
Download PDFInfo
- Publication number
- TW307032B TW307032B TW085110642A TW85110642A TW307032B TW 307032 B TW307032 B TW 307032B TW 085110642 A TW085110642 A TW 085110642A TW 85110642 A TW85110642 A TW 85110642A TW 307032 B TW307032 B TW 307032B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconducting
- item
- container
- patent application
- preparing
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000006396 nitration reaction Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 241001597062 Channa argus Species 0.000 claims 1
- 235000007516 Chrysanthemum Nutrition 0.000 claims 1
- 244000189548 Chrysanthemum x morifolium Species 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 238000005336 cracking Methods 0.000 claims 1
- 238000011010 flushing procedure Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- 238000009826 distribution Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 238000011049 filling Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 241000218033 Hibiscus Species 0.000 description 4
- 235000005206 Hibiscus Nutrition 0.000 description 4
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910005091 Si3N Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- AOSZTAHDEDLTLQ-AZKQZHLXSA-N (1S,2S,4R,8S,9S,11S,12R,13S,19S)-6-[(3-chlorophenyl)methyl]-12,19-difluoro-11-hydroxy-8-(2-hydroxyacetyl)-9,13-dimethyl-6-azapentacyclo[10.8.0.02,9.04,8.013,18]icosa-14,17-dien-16-one Chemical compound C([C@@H]1C[C@H]2[C@H]3[C@]([C@]4(C=CC(=O)C=C4[C@@H](F)C3)C)(F)[C@@H](O)C[C@@]2([C@@]1(C1)C(=O)CO)C)N1CC1=CC=CC(Cl)=C1 AOSZTAHDEDLTLQ-AZKQZHLXSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 229940126657 Compound 17 Drugs 0.000 description 1
- 241000270722 Crocodylidae Species 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- 240000008790 Musa x paradisiaca Species 0.000 description 1
- 235000018290 Musa x paradisiaca Nutrition 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 241001504505 Troglodytes troglodytes Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- LNNWVNGFPYWNQE-GMIGKAJZSA-N desomorphine Chemical compound C1C2=CC=C(O)C3=C2[C@]24CCN(C)[C@H]1[C@@H]2CCC[C@@H]4O3 LNNWVNGFPYWNQE-GMIGKAJZSA-N 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000002372 helium compounds Chemical class 0.000 description 1
- JMBPWMGVERNEJY-UHFFFAOYSA-N helium;hydrate Chemical compound [He].O JMBPWMGVERNEJY-UHFFFAOYSA-N 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(1 ) 琎明背暑 本發明係有鬭一種製備半導讎元件之方法,更特別而 言,俤有W—種製備半導讎元件内之霣容器之方法,其抑 制鏞存電極輿氣化担<Taz〇s>介電膜藺氧化物之生成。 半導讎元件之霣容器係由雜存霣極,介霄膜及被電極 所組成。 第1A至1C·爲顯示依據傅统方法製備半導讎元件電容 器之步驪之截面·。 參考數字11係表示半導讎基材,參考數宇13係表示中 間層絕鐮層,參考數字係表示接觸孔,參考數宇15俤表示 髂存電極,參考數字17係表示蕉化物膜,且參考數宇19係 表示介霣膜。 參考第1D·,絕鏵材料被沈稹於具有晶讎管(未示出) 之半導鼸基材11上。然後*接鷗孔14及中閜層絕嫌層13藉 由蝕刻絕续材料而曝露出暴體管之來源礓(未示出)而形成 之。用K棋製於下一步骤之鏞存结點15内之材料層(未示 出)藉由沈積足Μ掩埋包含接觸孔14之半導鱧基材U上之 一接觸孔之導«材料而形成之,然後,将其触刻*於接觸 孔14上形成皤存電極15。 導霣材料爲含有矽之材料,例如,聚矽或無規矽。 參考第1Β· * «化物膜17藉由使用氡氦化皤存《檯15 之表面而形成之,其俤作爲氧之陣壁層。 形成氦化物臢17之目的係避免於下述之形成1^2〇5介 電膜步骤中於皤存霣極15及介電膜闋形成氧化物膜。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210 X 297公釐) I I I I I I I I 裝— — I I I I 訂— — I I I I 線 (請先閲讀背面之注意事項再填寫本頁) 4 經濟部中央標準局貝工消費合作社印製 A7 -__?Z_ 五、發明説明(2 ) 參考第1C·,介電膜19傈藉由於具有氦化物膜17上沈 稹Ta«Os而形成之》然後,包含介電膜19之半導讎基材使 用乾嫌氧作熱處理》 乾嫌氧處理係蘑免漏泄電滾因介霣膜19内«空嫌而增 加,其係於8001C施行30分鳙。 然而,氛(NIM基於《化物膜17之表面形成之,生成 對介電膜之損害*因而增加漏泄霣滾》 再者,因介*議19及氮化物_ 17之Jf度係由所欲«池 «容澜定之,作爲«陣壁層之*化物膜17不能被作得更厚 。因此*氮化物膜17厚度之限制妨礙健存電極15及介霣膜 19間氧化物膜生成之完全抑制,因此,增加Μ等效氧化物 膜厚度表之之介霄膜19之厚嫌。 ^鳙被 本發明之目的傈提供一種製備半導讎元件内電容器之 方法,其中*皤存霣極與氧化坦(Tas〇s>間氧化物膜之成 長被抑制*且對霄容器介«_之損害被降低。 爲連成上述目的,其提供一種用Μ製備半導讎元件内 之霣容器之方法*其包含下列步朦:藉由依序氦化及氣化 形成於半導钃基材上之雔存«棰表面而於皤存霄極表面上 形成障鑒層;鞴由於該障壁層上沈^Tai〇3而形成介霣層 :及使用氣氣熱處理包含介霣膜之半導讎基材》 氦化反應較佳係使用快速熱處理UTP)及火鑪之一者 施行之。 較佳者,用Μ施行RTP方法中之糞化反醮之裝置係與 本紙張尺度適用中國國家櫺準(CNS ) A4規格(210X 297公釐) — Mil i I I I 裝 I 訂—— I I I 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印製 A7 _B7____ 五、發明説明(3 ) 真空承載鎮及使用N2沖提之裝置之一者一起使用。 較佳者,氱化反應係於800〜900t:施行10〜200秒。 較佳者,本發明係使用NH3、N*0及N*氣鱅之一者施行 之0 於依雒本發明之裂備半導鼸元件内霱容器之方法中, 因由気化反醮及氧化反應形成之Si0N係作爲氧障矍層,其 較傅統《化物膜強,因此* Μ等效氣化物膜厚度表之介電 膜厚度可被減i^。再者,《化反應後,留在所成结構表面 上之殘留ΝΗ3基於ft化反«{期藺移除之,因此,降低對介 霣膜之損害。结果*漏泄電潦性質可被改良。 _示篛翟說明 本發明之上述目的及優點將藉由參考附_詳细描述較 佳實施例而變得更明顯;其中: 第1Α至1C·為顯示依鐮傅統方法製備半導讎元件中之 霣容器之步骤之截面_; 第2A至2C·爲顯示依》本發明裂備半導黼元件中之電 容器之步》之截面_; 第3A及3B_爲示介電膜藉由沈積TuOs至85A厚度 形成於於不同條件下形成之儲存電極之情況中,施加電壓 為1.5V之氣化物當*厚度分佈<T0XEQs>及漏泄霣滾分佈。 第4A至4B·係示介霣膜藉由沈積Ta2〇3至100A厚度 形成於於不同條件下而形成之《存«極之情況中,施加« 壓¾1.5V之TOXEQs及漘泄霣流分佈;及 第5A及5B·爲圓示介霣膜藉由沈稹Ta2〇s至125A厚度 本纸張尺度遑用中國國家標準(CN’S ) A4規格(210X297公釐) I I I I I I I 裝 I I I I 訂— I I I 線 (請先閲讀背面之注意事項再填寫本頁) 6 經濟部中央橾準局貝工消費合作社印11 A7 B7 五、發明説明(4 ) 形成於於不同條件下形成之鹪存電檷情況中,施加霱S爲 1.5V之TOXEQs及湯泄霣潢分佈。 太葙昍^雄拥撖明 於2A至2C·中,參考數字21表示半導鱷基材,參考數 宇23表示中閜層總鐮層,參考數字24表示接觸乳,參考數 字25表示鑲存霣極,參考數字27表示ft陣璺層,及參考數 字29表示介霣膜。 參考第2A·,鎘錄材料沈稹於具有矗讎管(未示出〉之 半導讎基材21上。然後*藉由蝕刻絕鐮材料M_露矗讎管 之來灌6(未示出)而形成接鼸孔24及中閨層絕縑層23。為 形成於下一步隳将被構製於皤存電極25內之材料層(未示 出),導讎材料被沈積於中間層絕錄層23,以充分填充接 «孔24。其後,藉由蝕刻材料層而於接鼸孔24上形成健存 電極25。 導霣材料爲含有矽之材料,例如,聚矽或無規矽。 參考第2BII,藉由依據硝化及氧化儲存霣槿25表面而 由SiON形成«陣璧層27。 硝化反《係藉由快逋熱處理(RTP>而施行之,其係於 800-90010使用稱氣(NH3)進行10-200秒。结果,Si3N*之 硝化膜(未示出)形成於截存電槿25上。 此處,NH3未被Na〇或N2取代。 氣化反應偁使用“氣讎於如厢硝化反臛般之相同條件 下施行之。此處,硝化反臁期問殘存於硝化膜表面上之NH3 基酸移除且由Si3N«轉換成SiON之氣陣璺層27被形成之。 本紙伕尺度適用中國國家橾準(CNS ) Α4規格(210X 297公釐) 1^--------^------,,τ-------0 (請先閲讀背面之注意事項再填寫本頁) 7 經濟部中央橾準局員工消費合作社印製 A7 B7 j'發明説明(5) 藉由移除半導讎基材21至用於施行硝化或氣化反應( 鞴由真空負載栓)之裝置或硝化反鼸及氧化反應前之使用 N*沖提之裝置,使天然氣化膜及污染物免於沈積於《存霣 極25。 參考第2C·,藉由將沈積於所成结構之整饈表 面至預定厚度而形成介«膜29,其典第2B麵一起描述,然 後使用乾〇«熱處理包含介霣膜29之半導鼸基材21。 其次,板狀霣槿(未示出)於下步*中形成之,》此, 完成霄容器》 第3A及3B·係各示於藉由沈積Tads至厚度爲85A 使介霣鼷形成於於各«不同條件下形成之β存電槿上之情 況中,施加1.5Vmfi至晶鼸管時,之氣化物當覺厚度分佈 及漏泄霣滾分佈。 此處,參考字a及b表示使用傳统技術,於纗存霣極表 面上施行快速熱硝化(RTN>後,藉由沈積Ta2〇s至85A厚度 之澜試结果。 參考字c表示本發明中,依序藉由使用RTN方法磺化鶼 存霣極表面及氣化該硝化表面短畤閜(約60秒),藉此形成 氧障里層,然後,沈積Ta2〇s至85A厚度而形成介«膜之 情況。參考數宇d揩示本發明中,依序藉由使用RTN方法硝 化健存電極表面及使用RT0方法氧化該礴化表面相對較長 時間(約120秒 >,藉此形成氧陣壁層,然後沈積Ta2(^至85 Α»度而形成介霣臢之情況。 第4A及4B_係各別匾示»由沈稹Ta*〇s至100A厚度於 本紙張尺度逍用中國國家標隼(CNS ) A4規格(210X297公釐) I^--------裝-- (請先閲面之注意Ϋ項再填寫本頁) 訂 線 8 經濟部中央樣準局負工消費合作社印製 A7 B7__ 五、發明説明(6 ) 於各檷不同條件形成之健存«棰上,形成介«膜之情況中 ,施加1.5V霣壓至晶鼸管時,TOXEQs分佈及漏泄電滾分佈 〇 參考宇a,b,c及d指示相同於第3A及3B_所示條件下 之澜試结果。 第5A及5B_係各別示藉由沈稹Tai〇s至125A厚度於 各種不间條件形成之《存電極上,形成介霣臢之情況中| 施加1.5V*壓至晶鳢管時,TOXEQs分佈及漘泄《潢分佈》 參考字a,b,c及d指示相同於第1·所示條件下之 試结果。 由上述示,值得注意的是,舆鐮存鬌極之表面僅被 硝化反應之習知技蕕相比,於饑存霄極之表面依序施行硝 化反«及氧化反應之本發明中*當量氧化物膜之》度減少 約2Α且漏泄霣滾減少約(1ΧΕ0.5) nA/ca*。 亦值得注意的是,當了^心介霣膜較厚時,當量氧化 物膜厚度及漏泄霣液滅少。 因此,依據本發明之製備半導鼸元件中之晶鼸管之方 法中,因由硝化反«及氧化反*而形成之Si ON作為氣陣壁 層,其較傳統硝化物層強,以當ft氣化物膜厚度表之之介 霣膜厚度被減少,且因硝化反醒處理後殘留在所成结構表 面上之NH3基於填化處理期Μ被移除之,因此,降低對介 «禊之損寄。結果,漏泄電流特性可被改善。 本發明並非受限於上述實施例,且醮淸楚地瞭解對熟 習此項技蕕者而言,於本發明範矚及精神範醻内可作許多 變化。 本紙張尺度適用t國國家梂準(CNS ) A4規格(210X297公釐) 9 I Ml I 11 n ^ I n 1 n ^ I i 11 線 (請先閱讀背面之注意事項再填寫本頁)
Claims (1)
- A8 B8 C8 D8 申請專利範圍 1_ 一種裂備半導Λ元件內霣容器之方法,其步驟包含: 藉由依據硝化及氧化形成於半導讎,基材上之镛 存霣極,而於該鏞存霣極表面上形成氧障鑒暦;鞴由 沈稹Tai〇s於该氧障壁靥上形成介霄膜;及使用氧氣 熱處理包含該介電臢之該半導黼基材。 2. 如申讅專利範第1項所述之用於製備半導鱺元件内 之霣容器之方法,其中該硝化反醮係使用快速熱«理 <RTP>及火鑪之一者施行之。 3. 如申請専利耱園第1項所述之用於«(備半導讎元件内 之«容器之方法,其中該礴化反應係於800-900TC施 行 10-2000秒。 4. 如申請《利範_第2項所述之用於製備半導讎元件内 之«容器之方法,其中用K於RTP方法中施行該硝化 反醮之装置係與真空真載栓及使用N«沖提之装置之一 者一起使用。 5. 如申請專利範圈第1項所述之用於製備半導讎元件内 之電容器之方法,其中该硝化反醮係使用NHa,N*0及 氣讎之一者施行之。 經濟部中央標準局男工消費合作社印製 (請先»讀背面之注意事項再填寫本頁) 6. 如申請專利範疆第1項所述之用於製備半導鳢元件内 之電容器之方法*其中該熱處理係使用RTP方法施行 之0 7. 如申請専利範第1項所述之用於製備半導讎元件内 之«容器之方法,其中用以施行該氧化反醮之裝置係 與真空負載栓及使用沖提之装置之一者一起使用。 本紙張尺度逍用中國國家標準(CNS ) A4規格(210X297公釐) 10 A8 B8 C8 D8 六、申請專利範圍 8. 如申讅專利範第1項所述之用於裂備半導龌元件内 之電容器之方法,其中該熱處理係於800-90〇π施行 10-200 秒。 9. 如申請專利範第1項所述之用於裂備半導讎元件内 之霣容器之方法,其中該氧陣Μ層係由SiON形成。 5 裝 訂 線 (請先阶讀賞面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) .Μ規格(210X297公釐) 11
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029828A KR0155879B1 (ko) | 1995-09-13 | 1995-09-13 | 오산화 이탄탈륨 유전막 커패시터 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW307032B true TW307032B (zh) | 1997-06-01 |
Family
ID=19426647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085110642A TW307032B (zh) | 1995-09-13 | 1996-08-31 |
Country Status (4)
Country | Link |
---|---|
US (2) | US5763300A (zh) |
JP (1) | JP3584129B2 (zh) |
KR (1) | KR0155879B1 (zh) |
TW (1) | TW307032B (zh) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6251720B1 (en) | 1996-09-27 | 2001-06-26 | Randhir P. S. Thakur | High pressure reoxidation/anneal of high dielectric constant materials |
KR100282413B1 (ko) * | 1996-10-24 | 2001-03-02 | 김영환 | 아산화질소 가스를 이용한 박막 형성 방법 |
KR100236531B1 (ko) * | 1996-11-06 | 2000-01-15 | 윤종용 | 박막 커패시터 제조방법 |
US5969397A (en) * | 1996-11-26 | 1999-10-19 | Texas Instruments Incorporated | Low defect density composite dielectric |
US6096597A (en) * | 1997-01-31 | 2000-08-01 | Texas Instruments Incorporated | Method for fabricating an integrated circuit structure |
GB2326279B (en) * | 1997-06-11 | 2002-07-31 | Hyundai Electronics Ind | Method of forming a capacitor of a semiconductor device |
US6468856B2 (en) * | 1997-07-24 | 2002-10-22 | Texas Instruments Incorporated | High charge storage density integrated circuit capacitor |
KR100258979B1 (ko) * | 1997-08-14 | 2000-06-15 | 윤종용 | 유전막을 수소 분위기에서 열처리하는 반도체장치의 커패시터 제조방법 |
KR100450657B1 (ko) * | 1997-08-26 | 2004-12-17 | 삼성전자주식회사 | 반도체메모리장치의캐패시터및그제조방법 |
TW370723B (en) * | 1997-11-27 | 1999-09-21 | United Microelectronics Corp | Method for reducing current leakage of high capacitivity materials |
US6278166B1 (en) * | 1997-12-12 | 2001-08-21 | Advanced Micro Devices, Inc. | Use of nitric oxide surface anneal to provide reaction barrier for deposition of tantalum pentoxide |
US6180481B1 (en) | 1998-01-09 | 2001-01-30 | Micron Technology, Inc. | Barrier layer fabrication methods |
KR100505611B1 (ko) * | 1998-07-09 | 2006-04-21 | 삼성전자주식회사 | 반도체장치의 커패시터의 제조방법 |
KR100518518B1 (ko) * | 1998-07-16 | 2006-04-28 | 삼성전자주식회사 | 반도체장치의 커패시터 및 그 제조방법 |
KR100286011B1 (ko) | 1998-08-04 | 2001-04-16 | 황철주 | 반도체소자의캐퍼시터및그제조방법 |
US6162738A (en) * | 1998-09-01 | 2000-12-19 | Micron Technology, Inc. | Cleaning compositions for high dielectric structures and methods of using same |
TW437010B (en) * | 1998-09-08 | 2001-05-28 | Siemens Ag | A layer-arrangement with a material-layer and a diffusion-barrier against diffusable material-components |
JP3189813B2 (ja) * | 1998-11-30 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100331271B1 (ko) | 1999-07-01 | 2002-04-06 | 박종섭 | TaON박막을 갖는 커패시터 제조방법 |
US6720604B1 (en) * | 1999-01-13 | 2004-04-13 | Agere Systems Inc. | Capacitor for an integrated circuit |
US6143598A (en) * | 1999-02-08 | 2000-11-07 | Chartered Semiconductor Manufacturing Ltd. | Method of fabrication of low leakage capacitor |
US6303956B1 (en) | 1999-02-26 | 2001-10-16 | Micron Technology, Inc. | Conductive container structures having a dielectric cap |
US6358793B1 (en) | 1999-02-26 | 2002-03-19 | Micron Technology, Inc. | Method for localized masking for semiconductor structure development |
JP3251256B2 (ja) * | 1999-03-01 | 2002-01-28 | 沖電気工業株式会社 | 半導体装置の製造方法 |
US6281142B1 (en) * | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
KR100335775B1 (ko) * | 1999-06-25 | 2002-05-09 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
GB2355113B (en) | 1999-06-25 | 2004-05-26 | Hyundai Electronics Ind | Method of manufacturing capacitor for semiconductor memory device |
KR100358066B1 (ko) | 1999-06-25 | 2002-10-25 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
KR100328454B1 (ko) | 1999-06-29 | 2002-03-16 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
KR100305076B1 (ko) | 1999-07-01 | 2001-11-01 | 박종섭 | 커패시터의 전하저장전극 형성방법 |
KR100327584B1 (ko) | 1999-07-01 | 2002-03-14 | 박종섭 | 반도체소자의 고정전용량 커패시터 형성방법 |
KR100331270B1 (ko) | 1999-07-01 | 2002-04-06 | 박종섭 | TaON박막을 갖는 커패시터 제조방법 |
GB2358284B (en) | 1999-07-02 | 2004-07-14 | Hyundai Electronics Ind | Method of manufacturing capacitor for semiconductor memory device |
KR100519514B1 (ko) * | 1999-07-02 | 2005-10-07 | 주식회사 하이닉스반도체 | TaON박막을 갖는 커패시터 제조방법 |
KR100373159B1 (ko) * | 1999-11-09 | 2003-02-25 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
US6465828B2 (en) | 1999-07-30 | 2002-10-15 | Micron Technology, Inc. | Semiconductor container structure with diffusion barrier |
KR100611386B1 (ko) * | 1999-08-31 | 2006-08-11 | 주식회사 하이닉스반도체 | 탄탈륨산화막 커패시터의 제조방법 |
KR100585073B1 (ko) * | 1999-09-15 | 2006-06-01 | 삼성전자주식회사 | 반도체 장치의 트렌치 형성 방법 |
US6417537B1 (en) | 2000-01-18 | 2002-07-09 | Micron Technology, Inc. | Metal oxynitride capacitor barrier layer |
KR100347142B1 (ko) * | 2000-01-25 | 2002-08-03 | 주식회사 하이닉스반도체 | 유전막 제조 방법 |
KR100345065B1 (ko) * | 2000-07-11 | 2002-07-20 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
US6639266B1 (en) | 2000-08-30 | 2003-10-28 | Micron Technology, Inc. | Modifying material removal selectivity in semiconductor structure development |
US6451646B1 (en) * | 2000-08-30 | 2002-09-17 | Micron Technology, Inc. | High-k dielectric materials and processes for manufacturing them |
DE10044451C1 (de) * | 2000-09-08 | 2002-04-04 | Epcos Ag | Elektrode und Kondensator mit der Elektrode |
US7378719B2 (en) * | 2000-12-20 | 2008-05-27 | Micron Technology, Inc. | Low leakage MIM capacitor |
US6727140B2 (en) * | 2001-07-11 | 2004-04-27 | Micron Technology, Inc. | Capacitor with high dielectric constant materials and method of making |
KR100875648B1 (ko) * | 2002-11-14 | 2008-12-26 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
US7385954B2 (en) * | 2003-07-16 | 2008-06-10 | Lucent Technologies Inc. | Method of transmitting or retransmitting packets in a communication system |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2967538D1 (en) * | 1978-06-14 | 1985-12-05 | Fujitsu Ltd | Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
US5569619A (en) * | 1992-06-24 | 1996-10-29 | Lg Semicon Co., Ltd. | Method for forming a capacitor of a semiconductor memory cell |
US5275974A (en) * | 1992-07-30 | 1994-01-04 | Northern Telecom Limited | Method of forming electrodes for trench capacitors |
US5330931A (en) * | 1993-09-22 | 1994-07-19 | Northern Telecom Limited | Method of making a capacitor for an integrated circuit |
US5554870A (en) * | 1994-02-04 | 1996-09-10 | Motorola, Inc. | Integrated circuit having both vertical and horizontal devices and process for making the same |
-
1995
- 1995-09-13 KR KR1019950029828A patent/KR0155879B1/ko not_active IP Right Cessation
-
1996
- 1996-08-31 TW TW085110642A patent/TW307032B/zh not_active IP Right Cessation
- 1996-09-04 JP JP23374896A patent/JP3584129B2/ja not_active Expired - Fee Related
- 1996-09-10 US US08/709,249 patent/US5763300A/en not_active Expired - Lifetime
-
1997
- 1997-04-21 US US08/843,799 patent/US5859760A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5859760A (en) | 1999-01-12 |
US5763300A (en) | 1998-06-09 |
KR970018202A (ko) | 1997-04-30 |
JP3584129B2 (ja) | 2004-11-04 |
JPH09116104A (ja) | 1997-05-02 |
KR0155879B1 (ko) | 1998-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW307032B (zh) | ||
TW396501B (en) | Method of forming a capacitor of a semiconductor device | |
TW425628B (en) | Substrate processing method and apparatus and SOI substrate | |
TW474004B (en) | Semiconductor device incorporated therein high k capacitor dielectric and method for the manufacture thereof | |
KR100272138B1 (ko) | 반도체장치 및 그 제조방법 | |
US8158488B2 (en) | Method of increasing deposition rate of silicon dioxide on a catalyst | |
TW424296B (en) | Capacitor of semiconductor device and method for forming the same | |
TWI242812B (en) | Method for forming a metal oxide film | |
JPH10200074A (ja) | 漏れ電流が少ない低圧化学蒸着酸化タンタル被膜形成の方法 | |
TW457536B (en) | Semiconductor device and manufacturing method thereof | |
JPH06168922A (ja) | シリコンの気相エッチング法 | |
JP2008258623A (ja) | 酸化ジルコニウム系キャパシタ及び同キャパシタの製造方法 | |
TW201206857A (en) | Method for passivating a silicon surface | |
TW385514B (en) | Capacitor fabricating method of semiconductor device | |
CN110890272A (zh) | 一种氧化铪基铁电薄膜的制备方法 | |
TW469633B (en) | Dielectric capacitor and memory and method of manufacturing the same | |
JP2687758B2 (ja) | 半導体装置の製造方法 | |
JP2005150416A (ja) | 半導体集積回路装置及びその製造方法 | |
US20070077759A1 (en) | Method for forming dielectric film and method for manufacturing semiconductor device by using the same | |
TW411621B (en) | Method to produce a capacitor for a semiconductor device | |
TW563181B (en) | Oxide film forming method | |
JPH05167008A (ja) | 半導体素子の製造方法 | |
JP6215523B2 (ja) | Ru含有酸素拡散バリア | |
TW457704B (en) | A condenser arranged in a support frame in a semiconductor arrangement and its manufacturing method | |
TW507299B (en) | Method for manufacturing semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |