TW306989B - - Google Patents

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Publication number
TW306989B
TW306989B TW085114358A TW85114358A TW306989B TW 306989 B TW306989 B TW 306989B TW 085114358 A TW085114358 A TW 085114358A TW 85114358 A TW85114358 A TW 85114358A TW 306989 B TW306989 B TW 306989B
Authority
TW
Taiwan
Prior art keywords
memory
address
array
row
memory bank
Prior art date
Application number
TW085114358A
Other languages
English (en)
Chinese (zh)
Original Assignee
Cirrus Logic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cirrus Logic Inc filed Critical Cirrus Logic Inc
Application granted granted Critical
Publication of TW306989B publication Critical patent/TW306989B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Static Random-Access Memory (AREA)
TW085114358A 1995-11-30 1996-11-21 TW306989B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/565,388 US5761694A (en) 1995-11-30 1995-11-30 Multi-bank memory system and method having addresses switched between the row and column decoders in different banks

Publications (1)

Publication Number Publication Date
TW306989B true TW306989B (https=) 1997-06-01

Family

ID=24258390

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114358A TW306989B (https=) 1995-11-30 1996-11-21

Country Status (5)

Country Link
US (1) US5761694A (https=)
EP (1) EP0777233A1 (https=)
JP (2) JPH09251421A (https=)
KR (1) KR100227133B1 (https=)
TW (1) TW306989B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08123953A (ja) * 1994-10-21 1996-05-17 Mitsubishi Electric Corp 画像処理装置
US5996042A (en) * 1996-12-16 1999-11-30 Intel Corporation Scalable, high bandwidth multicard memory system utilizing a single memory controller
JPH10302471A (ja) * 1997-02-28 1998-11-13 Mitsubishi Electric Corp 半導体記憶装置
US5835932A (en) * 1997-03-13 1998-11-10 Silicon Aquarius, Inc. Methods and systems for maintaining data locality in a multiple memory bank system having DRAM with integral SRAM
JP3092558B2 (ja) * 1997-09-16 2000-09-25 日本電気株式会社 半導体集積回路装置
GB2368415B (en) * 1998-07-21 2002-10-30 Seagate Technology Llc Improved memory system apparatus and method
US6418518B1 (en) 1998-09-18 2002-07-09 National Semiconductor Corporation Decoupled address and data access to an SDRAM
US6205511B1 (en) * 1998-09-18 2001-03-20 National Semiconductor Corp. SDRAM address translator
CN1199144C (zh) * 1999-10-18 2005-04-27 精工爱普生株式会社 显示装置
US6553463B1 (en) * 1999-11-09 2003-04-22 International Business Machines Corporation Method and system for high speed access to a banked cache memory
US6782466B1 (en) 1999-11-24 2004-08-24 Koninklijke Philips Electronics N.V. Arrangement and method for accessing data in a virtual memory arrangement
KR20020032136A (ko) * 2000-10-25 2002-05-03 박성훈 메모리를 이용한 대용량 보조기억장치
KR100390238B1 (ko) 2001-05-18 2003-07-07 주식회사 하이닉스반도체 뱅크 어드레스를 이용한 반도체 메모리 소자의 어드레스제어 장치
US6909655B2 (en) * 2001-07-23 2005-06-21 Niigata Seimitsu Co., Ltd. Integrated circuit
JP2003037170A (ja) * 2001-07-23 2003-02-07 Niigata Seimitsu Kk 集積回路
KR100427723B1 (ko) * 2001-11-21 2004-04-28 주식회사 하이닉스반도체 메모리 서브시스템
US20060129740A1 (en) * 2004-12-13 2006-06-15 Hermann Ruckerbauer Memory device, memory controller and method for operating the same
DK2458505T3 (en) * 2006-02-09 2014-12-01 Google Inc Memory Circulatory System and method
JP5481823B2 (ja) * 2008-10-08 2014-04-23 株式会社バッファロー メモリモジュール、および、メモリ用補助モジュール
US8892844B2 (en) * 2011-03-07 2014-11-18 Micron Technology, Inc. Methods of accessing memory cells, methods of distributing memory requests, systems, and memory controllers
US10838886B2 (en) 2011-04-19 2020-11-17 Micron Technology, Inc. Channel depth adjustment in memory systems
US9135982B2 (en) * 2013-12-18 2015-09-15 Intel Corporation Techniques for accessing a dynamic random access memory array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245034A (ja) * 1984-05-18 1985-12-04 Ascii Corp デイスプレイコントロ−ラ
US4803621A (en) * 1986-07-24 1989-02-07 Sun Microsystems, Inc. Memory access system
JPH01171067A (ja) * 1987-12-26 1989-07-06 Fanuc Ltd アドレス変換回路
JPH0760413B2 (ja) * 1989-05-12 1995-06-28 インターナショナル・ビジネス・マシーンズ・コーポレーション メモリ・システム
US5261068A (en) * 1990-05-25 1993-11-09 Dell Usa L.P. Dual path memory retrieval system for an interleaved dynamic RAM memory unit
US5361339A (en) * 1992-05-04 1994-11-01 Xerox Corporation Circuit for fast page mode addressing of a RAM with multiplexed row and column address lines
US5446691A (en) * 1994-03-15 1995-08-29 Shablamm! Computer Inc. Interleave technique for accessing digital memory
US5506810A (en) * 1994-08-16 1996-04-09 Cirrus Logic, Inc. Dual bank memory and systems using the same

Also Published As

Publication number Publication date
KR100227133B1 (ko) 1999-10-15
JP2002055877A (ja) 2002-02-20
EP0777233A1 (en) 1997-06-04
JPH09251421A (ja) 1997-09-22
US5761694A (en) 1998-06-02
KR970029077A (ko) 1997-06-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees